Refer to the page 6 as to the product guaranteed maximum junction temperature C OUTLINE DRWING Dimensions in mm TYPE NME CLSS 1. MX 6..±..9 MX 1.... MIN.±. 1.±. MX.±..8.±.1. Measurement point of case temperature 1 IT (RMS)... DRM... IFGT!, IRGT!, IRGT #...m 1 1 T1 TERMINL T TERMINL GTE TERMINL T TERMINL MP- PPLICTION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications MXIMUM RTINGS Symbol DRM DSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 oltage class 1 Unit Symbol IT (RMS) Parameter RMS on-state current Conditions Commercial frequency, sine full wave conduction, Tc= C Ratings Unit ITSM Surge on-state current Hz sinewave 1 full cycle, peak value, non-repetitive I t I t for fusing alue corresponding to 1 cycle of half wave Hz, surge on-state current. s PGM Peak gate power dissipation W PG () verage gate power dissipation. W GM Peak gate voltage IGM Peak gate current Tj Junction temperature ~ +1 C Tstg Storage temperature ~ +1 C Weight Typical value.6 g 1. Gate open. Mar.
Refer to the page 6 as to the product guaranteed maximum junction temperature C ELECTRICL CHRCTERISTICS Symbol Parameter Test conditions Min. Limits Typ. Max. Unit IDRM TM FGT! RGT! RGT # IFGT! IRGT! IRGT # GD Rth (j-c) Repetitive peak off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Thermal resistance! @ #! @ # Tj=1 C, DRM applied Tc= C, ITM=, Instantaneous measurement Tj= C, D=6, RL=6Ω, RG=Ω Tj= C, D=6, RL=6Ω, RG=Ω Tj=1 C, D=1/DRM Junction to case.. 1.8 1. 1. 1.. m m m m C/W Critical-rate of rise of off-state commutating voltage Tj=1 C /µs. Measurement using the gate trigger characteristics measurement circuit.. Case temperature is measured on the T terminal.. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=1 C. Rate of decay of on-state commutating current (di/dt)c=./ms. Peak off-state voltage D= SUPPLY MIN CURRENT MIN (di/dt)c D PERFORMNCE CURES MXIMUM ON-STTE CHRCTERISTICS RTED SURGE ON-STTE CURRENT ON-STTE CURRENT () 1 Tj = C Tj = 1 C 1.6 1....8.6 SURGE ON-STTE CURRENT () 9 1 ON-STTE () CONDUCTION (CYCLES T Hz) Mar.
Refer to the page 6 as to the product guaranteed maximum junction temperature C GTE () GTE CHRCTERISTICS (Ι, ΙΙ ND ΙΙΙ) GM = 1 PGM = W PGM = GT = 1..W IGM = IFGT I IRGT I IRGT III 1 GD =. 1 (%) GTE TRIGGER CURRENT (Tj = t C) GTE TRIGGER CURRENT (Tj = C) IFGT I GTE TRIGGER CURRENT S. JUNCTION TEMPERTURE IRGT III IRGT I TYPICL EXMPLE 1 1 GTE CURRENT (m) JUNCTION TEMPERTURE ( C) (%) GTE TRIGGER (Tj = t C) GTE TRIGGER (Tj = C) GTE TRIGGER S. JUNCTION TEMPERTURE TYPICL EXMPLE 1 1 TRNSIENT THERML IMPEDNCE ( C/W)..6..8.. 1.6 1..8. MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO CSE) 1 1 JUNCTION TEMPERTURE ( C) CONDUCTION (CYCLES T Hz) ON-STTE POWER DISSIPTION (W) 8 6 1 MXIMUM ON-STTE POWER DISSIPTION CONDUCTION RESISTIE, INDUCTIE LODS 1 6 8 CSE TEMPERTURE ( C) 1 1 LLOWBLE CSE TEMPERTURE S. RMS ON-STTE CURRENT CURES PPLY REGRDLESS OF CONDUCTION NGLE CONDUCTION RESISTIE, INDUCTIE LODS 1 6 8 RMS ON-STTE CURRENT () RMS ON-STTE CURRENT () Mar.
Refer to the page 6 as to the product guaranteed maximum junction temperature C MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT 1 LL FINS RE LUMINUM 1 1 1 t. t. t. NTURL CONECTION CURES PPLY RESISTIE REGRDLESS OF INDUCTIE, CONDUCTION NGLE LODS 1 6 8 MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT 1 NTURL CONECTION NO FINS CURES PPLY REGRDLESS 1 OF CONDUCTION NGLE RESISTIE, INDUCTIE LODS...6.8 1. 1. 1. 1.6 RMS ON-STTE CURRENT () RMS ON-STTE CURRENT () (%) REPETITIE PEK OFF-STTE CURRENT (Tj = t C) REPETITIE PEK OFF-STTE CURRENT (Tj = C) REPETITIE PEK OFF-STTE CURRENT S. JUNCTION TEMPERTURE TYPICL EXMPLE 1 HOLDING CURRENT (m) 1 HOLDING CURRENT S. JUNCTION TEMPERTURE D = 1 DISTRIBUTION TYPICL EXMPLE 1 JUNCTION TEMPERTURE ( C) JUNCTION TEMPERTURE ( C) LCHING CURRENT (m) 1 LCHING CURRENT S. JUNCTION TEMPERTURE DISTRIBUTION + T, G + TYPICL T, G EXMPLE T +, G TYPICL EXMPLE 1 (%) BREKOER (Tj = t C) BREKOER (Tj = C) 1 1 BREKOER S. JUNCTION TEMPERTURE TYPICL EXMPLE 1 JUNCTION TEMPERTURE ( C) JUNCTION TEMPERTURE ( C) Mar.
Refer to the page 6 as to the product guaranteed maximum junction temperature C (%) BREKOER (dv/dt = x/µs) BREKOER (dv/dt = 1/µs) OFF-STTE COMMUTTION CHRCTERISTICS 1 TYPICL EXMPLE SUPPLY Tj = 1 C MIN CURRENT (di/dt)c MIN 1 BREKOER S. RTE OF RISE OF I QUDRNT III QUDRNT 1 CRITICL RTE OF RISE OF OFF-STTE COMMUTTING (/µs) 1 MINIMUM CHRC- TERISTICS LUE TYPICL EXMPLE Tj = 1 C IT = τ = µs D = f = Hz I QUDRNT III QUDRNT 1 D RTE OF RISE OF OFF-STTE (/µs) RTE OF DECY OF ON-STTE COMMUTTING CURRENT (/ms) (%) GTE TRIGGER CURRENT (tw) GTE TRIGGER CURRENT (DC) IRGT I GTE TRIGGER CURRENT S. GTE CURRENT PULSE WIDTH IFGT I IRGT III TYPICL EXMPLE 1 1 GTE CURRENT PULSE WIDTH (µs) GTE TRIGGER CHRCTERISTICS TEST CIRCUITS 6Ω 6Ω 6 6 RG RG TEST PROCEDURE 1 TEST PROCEDURE 6Ω 6 RG TEST PROCEDURE Mar.
The product guaranteed maximum junction temperature C (See warning.) OUTLINE DRWING Dimensions in mm TYPE NME CLSS 1. MX 6..±..9 MX 1.... MIN.±. 1.±. MX.±..8.±.1. Measurement point of case temperature 1 IT (RMS)... DRM... IFGT!, IRGT!, IRGT #...m 1 1 T1 TERMINL T TERMINL GTE TERMINL T TERMINL MP- PPLICTION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using.. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MXIMUM RTINGS Symbol DRM DSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 oltage class 1 Unit Symbol IT (RMS) Parameter RMS on-state current Conditions Commercial frequency, sine full wave conduction, Tc=18 C Ratings Unit ITSM Surge on-state current Hz sinewave 1 full cycle, peak value, non-repetitive I t I t for fusing alue corresponding to 1 cycle of half wave Hz, surge on-state current. s PGM Peak gate power dissipation W PG () verage gate power dissipation. W GM Peak gate voltage IGM Peak gate current Tj Junction temperature ~ + C Tstg Storage temperature ~ + C Weight Typical value.6 g 1. Gate open. Mar.
The product guaranteed maximum junction temperature C (See warning.) ELECTRICL CHRCTERISTICS Symbol Parameter Test conditions Min. Limits Typ. Max. Unit IDRM TM FGT! RGT! RGT # IFGT! IRGT! IRGT # GD Rth (j-c) Repetitive peak off-state current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Thermal resistance! @ #! @ # Tj= C, DRM applied Tc= C, ITM=, Instantaneous measurement Tj= C, D=6, RL=6Ω, RG=Ω Tj= C, D=6, RL=6Ω, RG=Ω Tj=1 C/ C, D=1/DRM Junction to case./.1. 1.8 1. 1. 1.. m m m m C/W Critical-rate of rise of off-state commutating voltage Tj=1 / C /1 /µs. Measurement using the gate trigger characteristics measurement circuit.. Case temperature is measured on the T terminal.. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=1 C/ C. Rate of decay of on-state commutating current (di/dt)c=./ms. Peak off-state voltage D= SUPPLY MIN CURRENT MIN (di/dt)c D PERFORMNCE CURES MXIMUM ON-STTE CHRCTERISTICS RTED SURGE ON-STTE CURRENT ON-STTE CURRENT () 1 Tj = C Tj = C 1. 1. 1...... SURGE ON-STTE CURRENT () 9 1 ON-STTE () CONDUCTION (CYCLES T Hz) Mar.
The product guaranteed maximum junction temperature C (See warning.) GTE () GM = 1 GT = 1. GTE CHRCTERISTICS (Ι, ΙΙ ND ΙΙΙ) PGM =.W PGM = W IGM = IFGT I IRGT I IRGT III GD =.1 1 1 (%) GTE TRIGGER CURRENT (Tj = t C) GTE TRIGGER CURRENT (Tj = C) IFGT I 1 GTE TRIGGER CURRENT S. JUNCTION TEMPERTURE IRGT III IRGT I TYPICL EXMPLE 1 1 GTE CURRENT (m) JUNCTION TEMPERTURE ( C) (%) GTE TRIGGER (Tj = t C) GTE TRIGGER (Tj = C) GTE TRIGGER S. JUNCTION TEMPERTURE TYPICL EXMPLE 1 1 1 TRNSIENT THERML IMPEDNCE ( C/W)..6..8.. 1.6 1..8. MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO CSE) 1 1 JUNCTION TEMPERTURE ( C) CONDUCTION (CYCLES T Hz) ON-STTE POWER DISSIPTION (W) 8 6 1 MXIMUM ON-STTE POWER DISSIPTION CONDUCTION RESISTIE, INDUCTIE LODS 1 6 8 CSE TEMPERTURE ( C) 1 1 LLOWBLE CSE TEMPERTURE S. RMS ON-STTE CURRENT CURES PPLY REGRDLESS OF CONDUCTION NGLE CONDUCTION RESISTIE, INDUCTIE LODS 1 6 8 RMS ON-STTE CURRENT () RMS ON-STTE CURRENT () Mar.
The product guaranteed maximum junction temperature C (See warning.) MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT 1 LL FINS RE LUMINUM 1 1 t. 1 t. t. NTURL CONECTION CURES PPLY RESISTIE REGRDLESS OF INDUCTIE, CONDUCTION NGLE LODS 1 6 8 MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT 1 NTURL CONECTION NO FINS, CURES PPLY REGRDLESS 1 OF CONDUCTION NGLE RESISTIE, INDUCTIE LODS...6.8 1. 1. 1. 1.6 RMS ON-STTE CURRENT () RMS ON-STTE CURRENT () (%) REPETITIE PEK OFF-STTE CURRENT (Tj = t C) REPETITIE PEK OFF-STTE CURRENT (Tj = C) REPETITIE PEK OFF-STTE CURRENT S. JUNCTION TEMPERTURE 6 TYPICL EXMPLE 1 1 HOLDING CURRENT (m) 1 HOLDING CURRENT S. JUNCTION TEMPERTURE D = 1 DISTRIBUTION TYPICL EXMPLE 11 JUNCTION TEMPERTURE ( C) JUNCTION TEMPERTURE ( C) LCHING CURRENT (m) LCHING CURRENT S. JUNCTION TEMPERTURE DISTRIBUTION + T, G + TYPICL T, G EXMPLE T +, G TYPICL EXMPLE 1 1 1 (%) BREKOER (Tj = t C) BREKOER (Tj = C) 1 1 BREKOER S. JUNCTION TEMPERTURE TYPICL EXMPLE 1 1 JUNCTION TEMPERTURE ( C) JUNCTION TEMPERTURE ( C) Mar.
The product guaranteed maximum junction temperature C (See warning.) (%) 1 BREKOER S. RTE OF RISE OF OFF-STTE (Tj = 1 C) TYPICL EXMPLE Tj = 1 C (%) 1 BREKOER S. RTE OF RISE OF OFF-STTE (Tj = C) TYPICL EXMPLE Tj = C BREKOER (dv/dt = x/µs) BREKOER (dv/dt = 1/µs) 1 III QUDRNT I QUDRNT 1 BREKOER (dv/dt = x/µs) BREKOER (dv/dt = 1/µs) 1 III QUDRNT I QUDRNT 1 RTE OF RISE OF OFF-STTE (/µs) RTE OF RISE OF OFF-STTE (/µs) CRITICL RTE OF RISE OF OFF-STTE COMMUTTING (/µs) 1 COMMUTTION CHRCTERISTICS (Tj = 1 C) SUPPLY MIN CURRENT MIN (di/dt)c D TYPICL EXMPLE Tj = 1 C IT = τ = µs D = f = Hz I QUDRNT MINIMUM CHRC- TERISTICS LUE III QUDRNT 1 CRITICL RTE OF RISE OF OFF-STTE COMMUTTING (/µs) 1 COMMUTTION CHRCTERISTICS (Tj = C) SUPPLY MIN CURRENT MIN (di/dt)c D I QUDRNT III QUDRNT TYPICL EXMPLE Tj = C IT = τ = µs D = f = Hz MINIMUM CHRC- TERISTICS LUE 1 RTE OF DECY OF ON-STTE COMMUTTING CURRENT (/ms) RTE OF DECY OF ON-STTE COMMUTTING CURRENT (/ms) (%) GTE TRIGGER CURRENT (tw) GTE TRIGGER CURRENT (DC) IRGT I GTE TRIGGER CURRENT S. GTE CURRENT PULSE WIDTH IFGT I IRGT III TYPICL EXMPLE 1 1 GTE CURRENT PULSE WIDTH (µs) Mar.
The product guaranteed maximum junction temperature C (See warning.) GTE TRIGGER CHRCTERISTICS TEST CIRCUITS 6Ω 6Ω RECOMMENDED CIRCUIT LUES ROUND THE TRIC 6 RG TEST PROCEDURE 1 6Ω 6 RG TEST PROCEDURE LOD C1 R1 C1 =.1~.µF R1 = ~Ω C R C =.1µF R = Ω 6 RG TEST PROCEDURE Mar.
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