Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83 A FRED Pt CHOPPER DIODE, T J = 5 C V R 6 V I F(DC) at C 7 A V F at 25 C at 6 A 2.6 V Speed 3 khz to 5 khz Package MTP Circuit configuration Dual forward FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate UL approved file E78996 Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance please see /doc?9992 BENEFITS Lower conduction losses and switching losses Higher switching frequency up to 5 khz Optimized for welding, UPS, and SMPS applications PCB solderable terminals Direct mounting to heatsink ABSOLUTE MAXIMUM RATINGS FRED Pt antiparallel diode IGBT FRED Pt chopper diode PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V RRM 6 V Maximum continuous forward current T C = 25 C 7 I T J = 5 C maximum F(DC) A T C = C Maximum power dissipation P D T C = 25 C 25 W Collector to emitter voltage V CES 6 V Gate to emitter voltage V GE I GES max. ± 25 ns ± V Maximum continuous collector current T C = 25 C 2 I at V GE = 5 V, T J = 5 C maximum C T C = C 83 A Clamped inductive load current I LM 3 Maximum power dissipation P D T C = 25 C 462 W Repetitive peak reverse voltage V RRM 6 V Maximum continuous forward current T C = 25 C 26 I T J = 5 C maximum F A T C = C 7 Maximum power dissipation P D T C = 25 C 56 W Maximum operating junction temperature T J 5 C Storage temperature range T Stg 4 to +5 Isolation voltage V ISOL V RMS t = s, 35 V Revision: 2Mar8 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ELECTRICAL SPECIFICATIONS ( unless otherwise noted) AP diode IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Blocking voltage BV RRM.5 ma 6 V I F = 6 A 2.8 2.43 Forward voltage drop V FM V I F = 6 A, 2.5 2.3 Collector to emitter breakdown voltage BV CES V GE = V, I C =.5 ma 6 V Temperature coefficient of breakdown voltage V BR(CES) /T J I C =.5 ma (25 C to 25 C).6 V/ C V GE 5 V, I C = 6 A.93 2.29 Collector to emitter voltage V CE(on) V GE = 5 V, l C = 6 A, 2.36 2. V Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa 2.9 6. V Collector to emitter leakage current I CES V GE = V, V CE = 6 V μa V GE = V, V CE = 6 V, 2. ma Gate to emitter leakage I GES V GE = ± V ± na I F = 6 A 2.6 2.53 Forward voltage drop V FM FRED Pt I F = 6 A,.83 2.26 V chopper Blocking voltage BV RM.5 ma 6 diode V RRM = 6 V 75 μa Reverse leakage current I RM V RRM = 6 V,.5 ma RECOVERY PARAMETER AP diode FRED Pt chopper diode Peak reverse recovery current I rr IF = 6 A 67 A Reverse recovery time t rr di/dt = A/μs 6 ns Reverse recovery charge Q rr V R = V 6 85 nc Peak reverse recovery current I rr IF = 6 A 4.5 6. A Reverse recovery time t rr di/dt = A/μs 67 85 ns Reverse recovery charge Q rr V R = V 3 25 nc Peak reverse recovery current I rr IF = 6 A 9.5 2. A Reverse recovery time t rr di/dt = A/μs 28 65 ns Reverse recovery charge Q rr V R = V, 6 9 nc SWITCHING CHARACTERISTICS ( unless otherwise noted) PFC IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Gate to source charge Gate to drain (Miller) charge Q g Q gs Q gd IC = 6 A V CC = 4 V V GE = 5 V 46 6 7 Turnon switching loss E on.2 Turnoff switching loss E off.96 Total switching loss E tot.6 I C = A, V CC = 36 V, V GE = 5 V Turnon delay time t d(on) 24 R g = 5, L = 5 μh, Rise time t r 47 Turnoff delay time t d(off) 24 Fall time t f 66 Turnon switching loss E on.33 Turnoff switching loss E off.45 Total switching loss E tot.78 I C = A, V CC = 36 V, V GE = 5 V Turnon delay time t d(on) 246 R g = 5, L = 5 μh, Rise time t r 5 Turnoff delay time t d(off) 246 Fall time t f 7 Input capacitance C ies VGE = V 95 Output capacitance C oes V CC = 3 V 7 Reverse transfer capacitance C res f = MHz Revision: 2Mar8 2 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9 nc mj ns mj ns pf
THERMISTOR ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R 3 B value B /T J = 85 C 4 K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS AP FRED Pt diode Junction to case diode thermal resistance 4.9 IGBT Junction to case IGBT thermal resistance R thjc.27 C/W FRED Pt chopper diode Junction to case diode thermal resistance 2.25 Case to sink, flat, greased surface per module R thcs.6 C/W Mounting torque ± % to heatsink () 4 Nm Approximate weight 65 g Note () A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 6 25 Maximum Allowable Case Temperature ( C) 4 6 4 5 5 V GE = 5 V V GE = 2 V V GE = 8 V V GE = 9 V 4 6 4 2 3 4 5 9342_ I C Continuous Collector Current (A) 9342_3 V CE (V) Fig. Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 3 Typical IGBT Output Characteristics, 25 V GE = 8 V 5 V GE = 5 V V GE = 9 V V GE = 2 V. 5. 2 3 4 5 9342_2 V CE (V) 9342_4 V CE (V) Fig. 2 IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V Fig. 4 Typical IGBT Output Characteristics, Revision: 2Mar8 3 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
9342_5 25 5 T C = 25 C T C = 25 C 5 5 6 7 8 9 V GE (V) Fig. 5 Typical IGBT Transfer Characteristics, I F Instantaneous Forward Current (A) 9342_8 9 7 6 5 4 3 T J = 5 C.5..5 2. 2.5 3. V F Anode to Cathode Forward Voltage Drop (V) Fig. 8 Typical Diode Forward Voltage Characteristics of Antiparallel Diode, t p = 5 μs I CES (ma).. 3 4 5 6 9342_6.. 5 C V CES (V) 25 C Fig. 6 Typical IGBT Zero Gate Voltage Collector Current Allowable Case Temperature ( C) 6 4 6 4 5 5 9342_9 I F Continuous Forward Current (A) Fig. 9 Maximum Continuous Forward Current vs. Case Temperature Antiparallel Diode V geth (V) 9342_7 5. 4.5 4. 3.5 3..2.3.4.5.6.7.8.9. I C (ma) I F Instantaneous Forward Drop (A) 9 T J = 5 C 7 6 5 4 3.25.75.25.75 2.25 2.75 3.25 3.75 9342_ V F Forward Voltage Drop (V) Fig. 7 Typical IGBT Gate Thresold Voltage Fig. Typical PFC Diode Forward Voltage Revision: 2Mar8 4 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Allowable Case Temperature ( C) 6 4 6 4 5 5 25 3 35 4 9342_ I F Continuous Forward Current (A) Energy (mj) 9342_4 5 4 3 2 E off E on 3 4 5 R g (Ω) Fig. Maximum Continuous Forward Current vs. Case Temperature PFC Diode Fig. 4 Typical IGBT Energy Loss vs. R g, I C = A, V CC = 36 V, V GE = 5 V, L = 5 μh, R g = 5. T J = 5 C I R (ma)... Switching Time (ns) t d(off) t f t d(on) t r. 3 4 5 6 9342_2 V R (V) Fig. 2 Typical FRED Pt Chopper Diode Reverse Current vs. Reverse Voltage 9342_5 4 6 Fig. 5 Typical IGBT Switching Time vs. I C, V DD = 36 V, V GE = 5 V, L = 5 μh, R g = 5 2. t d(off).6 t d(on) Energy (mj).2.8 E off Switching Time (ns) t f t r.4 E on 9342_3 4 6 9342_6 3 4 5 R g (Ω) Fig. 3 Typical IGBT Energy Loss vs. I C, V CC = 36 V, V GE = 5 V, L = 5 μh, R g = 5 Fig. 6 Typical IGBT Switching Time vs. R g, I C = A, V CE = 36 V, V GE = 5 V, L = 5 μh Revision: 2Mar8 5 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
25 3 t rr (ns) t rr (ns) 5 3 4 5 3 3 4 5 9342_7 9342_ Fig. 7 Typical t rr Antiparallel Diode vs. di F /dt V rr = V, I F = 6 A Fig. Typical t rr Chopper Diode vs. di F /dt V rr = V, I F = 6 A 25 5 5 I rr (A) I rr (A) 5 5 3 4 5 3 4 5 9342_8 9342_2 Fig. 8 Typical I rr Antiparallel Diode vs. di F /dt V rr = V, I F = 6 A Fig. 2 Typical I rr Chopper Diode vs. di F /dt V rr = V, I F = 6 A Q rr (nc) 5 9 Q rr (nc) 9 7 6 5 4 6 3 3 4 5 3 3 4 5 9342_9 9342_22 Fig. 9 Typical Q rr Antiparallel Diode vs. di F /dt V rr = V, I F = 6 A Fig. 22 Typical Q rr Chopper Diode vs. di F /dt V rr = V, I F = 4 A Revision: 2Mar8 6 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Z thjc Thermal Impedance Junction to Case ( C/W).... 9342_23 D =.5 D =. D =. D =.5 D =.2 D =. DC.... t Rectangular Pulse Duration (s) Fig. 23 Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc Thermal Impedance Junction to Case ( C/W). D =.5 D =. D =. D =.5 D =.2 D =. DC..... 9342_24 t Rectangular Pulse Duration (s) Fig. 24 Maximum Thermal Impedance Z thjc Characteristics (PFC Diode) Revision: 2Mar8 7 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Driver L K D.U.T. + V CC D C D.U.T. + 9 V Fig. 25 Gate Charge Circuit (TurnOff) Fig. 27 S.C. SOA Circuit L Diode clamp/ D.U.T. L V + R g D.U.T. V + 5 V D.U.T./ Driver + V CC R g Fig. 26 RBSOA Circuit Fig. 28 Switching Loss Circuit R = V CC I CM D.U.T. + V CC R g Fig. 29 Resistive Load Circuit CIRCUIT CONFIGURATION E F Q A7 E6 D D3 Th I L E7 G6 D2 G7 M7 A B Q4 D4 M2 M3 Revision: 2Mar8 8 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ORDERING INFORMATION TABLE Device code VS MT 6 W DF 2 3 4 5 6 product 2 3 4 5 6 Current rating ( = A) Essential part number (MT = MTP package) Voltage code x = voltage rating (example: 6 = 6 V) Die IGBT technology (W = warp speed IGBT) Circuit configuration (DF = dual forward) Dimensions LINKS TO RELATED DOCUMENTS /doc?95383 Revision: 2Mar8 9 Document Number: 9342 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Outline Dimensions MTP Full Pin DIMENSIONS in millimeters 3. 2 ±.3 39.5 ±.3 2. ±.3 2..5 Ø. ±.25 z detail 2.5 ±. 6 3 7 ±.3 Use Self Tapping Screw 45 ±. or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8.8 Ra 63.5 ±.5 according to PCB thickness used.3 48.7 ±.3 7.4 2. ±.5 4. A B C D E F G H I L M 9.8 ±. 45 2 3 4 5 6 7 X 5.2 7.6 5.2 22.8 33.2 ±.3 3.8 ±.5 Ø 5 (x 4) 27.5 ±.3 Ø 2. (x 4) 6 2 R 2.6 (x 2) 8 24 3 PINS POSITION WITH TOLERANCE Ø.6 Revision: 4Sep6 Document Number: 95383 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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