Power MOSFET FEATURES. IRF820PbF SiHF820-E3 IRF820 SiHF820. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20
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1 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 3.0 Q g (Max.) (nc) 4 Q gs (nc) 3.3 Q gd (nc) 13 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 00/95/EC Available RoHS* COMPLIANT TO0AB G DS G D S NChannel MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO0AB package is universally preferred for commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO0AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)free SnPb TO0AB IRF80PbF SiHF80E3 IRF80 SiHF80 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 500 V GateSource Voltage ± 0 Continuous Drain Current at T C = 5 C.5 I D T C = 100 C 1.6 A Pulsed Drain Current a I DM 8.0 Linear Derating Factor 0.40 W/ C Single Pulse Avalanche Energy b E AS 10 mj Repetitive Avalanche Current a I AR.5 A Repetitive Avalanche Energy a E AR 5.0 mj Maximum Power Dissipation T C = 5 C P D 50 W Peak Diode Recovery dv/dt c dv/dt 3.5 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 150 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 63 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 5 C, L = 60 mh, R g = 5, I AS =.5 A (see fig. 1). c. I SD.5 A, di/dt 50 A/μs, V DD, T J 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply 10 lbf in 1.1 N m Document Number: S110507Rev. C, 1Mar11 1
2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 6 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc.5 SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 50 μa 500 V Temperature Coefficient /T J Reference to 5 C, I D = 1 ma 0.59 V/ C GateSource Threshold Voltage (th) =, I D = 50 μa V GateSource Leakage I GSS = ± 0 V ± 100 na = 500 V, = 0 V 5 Zero Gate Voltage Drain Current I DSS = 400 V, = 0 V, T J = 15 C 50 μa DrainSource OnState Resistance R DS(on) = I D = 1.5 A b 3.0 Forward Transconductance g fs = 50 V, I D = 1.5 A 1.5 S Dynamic Input Capacitance C iss = 0 V, 360 Output Capacitance C oss = 5 V, 9 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g 4 GateSource Charge Q gs I = D =.1 A, = 400 V, see fig. 6 and 13 b 3.3 nc GateDrain Charge Q gd 13 TurnOn Delay Time t d(on) 8.0 Rise Time t r V DD = 50 V, I D =.1 A, 8.6 TurnOff Delay Time t d(off) R g = 18, R D = 100, see fig. 10 b 33 ns Fall Time t f 16 Between lead, Internal Drain Inductance L D 6 mm (0.5") from 4.5 D package and center of nh G Internal Source Inductance L S die contact 7.5 S DrainSource Body Diode Characteristics MOSFET symbol Continuous SourceDrain Diode Current I S showing the.5 D integral reverse G Pulsed Diode Forward Current a I SM p n junction diode 8.0 S A Body Diode Voltage V SD T J = 5 C, I S =.5 A, = 0 V b 1.6 V Body Diode Reverse Recovery Time t rr ns T J = 5 C, I F =.1 A, di/dt = 100 A/ s Body Diode Reverse Recovery Charge Q rr nc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. Document Number: S110507Rev. C, 1Mar11
3 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 91059_01 Top 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V V 0 µs Pulse Width T C = 5 C, DraintoSource Voltage (V) 91059_ C 5 C 0 µs Pulse Width = 50 V , GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 5 C Fig. 3 Typical Transfer Characteristics 91059_ Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V µs Pulse Width T C = 150 C, DraintoSource Voltage (V) 4.5 V R DS(on), DraintoSource On Resistance (Normalized) 91059_ I D =.1 A = T J, Junction Temperature ( C) Fig. Typical Output Characteristics, T C = 150 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: S110507Rev. C, 1Mar11 3
4 Capacitance (pf) 91059_ = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 91059_ C 5 C = 0 V V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) 91059_ I D =.1 A = 100 V = 50 V = 400 V For test circuit see figure Q G, Total Gate Charge (nc) 91059_ Operation in this area limited by R DS(on) T C = 5 C T J = 150 C Single Pulse 10 µs 100 µs 1 ms 10 ms , DraintoSource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area Document Number: S110507Rev. C, 1Mar11
5 R G Pulse width 1 µs Duty factor 0.1 % R D D.U.T. Fig. 10a Switching Time Test Circuit V DD 91059_ T C, Case Temperature ( C) 90 % Fig. 9 Maximum Drain Current vs. Case Temperature 10 % t d(on) t r t d(off) t f Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) D = Single Pulse (Thermal Response) P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc T C 91059_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase L Vary t p to obtain required I AS t p R G I AS D.U.T. V DD V DD t p 0.01 Ω I AS Fig. 1a Unclamped Inductive Test Circuit Fig. 1b Unclamped Inductive Waveforms Document Number: S110507Rev. C, 1Mar11 5
6 E AS, Single Pulse Energy (mj) 91059_1c Top Bottom V DD = 50 V Starting T J, Junction Temperature ( C) I D 1.1 A 1.6 A.5 A Fig. 1c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 1 V 0. µf 50 kω 0.3 µf Q GS Q GD D.U.T. V DS V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma I G I D Current sampling resistors Fig. 13b Gate Charge Test Document Number: S110507Rev. C, 1Mar11
7 Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period = a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig. 14 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S110507Rev. C, 1Mar11 7
8 Package Information TO01 D L H(1) Q L(1) 1 E 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A b b(1) c D E e e(1) F H(1) J(1) L L(1) Ø P Q ECN: X150364Rev. C, 14Dec15 DWG: 6031 Note M* = 0.05 inches to inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14Dec15 1 Document Number: 6654 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08Feb17 1 Document Number: 91000
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More informationPower MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) 2 R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET. IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G T C = 25 C. V GS at - 10 V
Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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D Series Power MOSFET IRF8B PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) Q gd (nc) 5 Configuration Single D TO22AB FEATURES Optimal design Low area specific
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area
More informationPower MOSFET DESCRIPTION. IRFD9220PbF SiHFD9220-E3 IRFD9220 SiHFD9220
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
More informationPower MOSFET. IRFD9024PbF SiHFD9024-E3 IRFD9024 SiHFD9024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 0 V 0.85 Q g (Max.) (nc) 38 Q gs (nc) 9.0 Q gd (nc) 8 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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D Series Power MOSFET SiHP6N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C () V GS = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a Lead (Pb)-free T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
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E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ± 20 T A = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.28 Q g max. (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET FEATURES Dynamic dv/dt rating Repetitive
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Power MOSFET PRODUCT SUMMARY (V) 300 R DS(on) (Ω) = 0 V 0.75 Q g (Max.) (nc) 7 Q gs (nc) 4.8 Q gd (nc) 7.6 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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S Series Power MOSFET PRODUCT SUMMARY at T J max. (V) 65 R DS(on) max. at 25 C (Ω) = V.9 Q g max. (nc) 98 Q gs (nc) 7 Q gd (nc) 25 Configuration Single D D 2 PAK (TO263) FEATURES Generation one High E
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EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
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EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C
Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) (Ω) V GS = 10 V 2.2 Q g (Max.) (nc) 31 Q gs (nc) 4.6 Q gd (nc) 17 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) (Ω) V GS = V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single TO220 G D S ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single S SOT223 D G G D S D PChannel MOSFET FEATURES Surface Mount Available
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.3 Q g max. (nc) 25 Q gs (nc) 23 Q gd (nc) 37 Configuration Single Super247 S D G ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nc) 28 Q gs (nc) 3.8 Q gd (nc) 14 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 5.0 V 0.80 Q g (Max.) (nc) 16 Q gs (nc) 2.7 Q gd (nc) 9.6 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 1.8 Q g (Max.) (nc) 20 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single D HVMDIP FEATURES Dynamic dv/dt rating Repetitive avalanche rated For
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration HVMDIP S G Single S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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EL Series Power MOSFET SiHP22N6EL PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C (Ω) V GS = V.7 Q g max. (nc) 74 Q gs (nc) 5 Q gd (nc) 5 Configuration Single FEATURES Reduced figureofmerit (FOM)
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D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
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EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc)
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EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
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E Series Power MOSFET SiHP35N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. () at 25 C V GS = V.82 Q g max. (nc) 32 Q gs (nc) 22 Q gd (nc) 46 Configuration Single D TO22AB G G DS S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
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E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
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E Series Power MOSFET SiHPN8E D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 85 R DS(on) typ. (Ω) at 25 C V GS = V.8 Q g max. (nc) 88 Q gs (nc) 9 Q gd (nc) 6 Configuration Single FEATURES
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E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
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EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 7 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 32 Configuration Single TO22 FULLPAK D G G D S S NChannel MOSFET ORDERING
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E Series Power MOSFET SiHD2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.38 Q g max. (nc) 5 Q gs (nc) 6 Q gd (nc) Configuration Single FEATURES Low figureofmerit (FOM) R on
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E Series Power MOSFET SiHA2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.84 Q g max. (nc) 92 Q gs (nc) Q gd (nc) 9 Configuration Single FEATURES Low figureofmerit (FOM) R on
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E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.4 Q g max. (nc) 58 Q gs (nc) 8 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING INFORMATION
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E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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EF Series Power MOSFET With Fast Body Diode SiHG8N6EF TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.28 Q g max. (nc) 4 Q gs (nc) 43 Q gd (nc) 43 Configuration
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Power MOSFET, 90 A VSFB90SA0 SOT227 PRIMARY CHARACTERISTICS V DSS 00 V I D DC 90 A R DS(on) 6.5 m Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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