P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (<.mm) vaiabe in Tape & Ree Fast Switching Lead-Free S G S2 G2 Top View HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS =20V R S(on) = 0.35Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The new Micro8 package, with haf the footprint area of the standard SO-8, provides the smaest footprint avaiabe in an SOIC outine. This makes the Micro8 an idea device for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro8 wi aow it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards. Micro8 bsoute Maximum Ratings Parameter Max. Units V S rain-source Votage 20 V I @ T = 25 C Continuous rain Current, V GS @ 0V 2.4 I @ T = 70 C Continuous rain Current, V GS @ 0V.9 I M Pused rain Current 9 P @T = 25 C Maximum Power issipation.25 W P @T = 70 C Maximum Power issipation 0.8 W Linear erating Factor 0.0 W/ C V GSM Gate-to-Source Votage Singe Puse tp<0µs 6 V V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns TJ, TSTG Operating Junction and Storage Temperature Range -55 to 50 C Sodering Temperature, for 0 seconds 240 (.6mm from case) Therma Resistance Parameter Max. Units R θj Maximum Junction-to-mbient 00 C/W Micro8 ata Sheets refect improved Therma Resistance, Power and Current -Handing Ratings- effective ony for product marked with ate Code 505 or ater. www.irf.com 02/22/05
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.04 V/ C Reference to 25 C, I = m 0.085 0.35 V GS = 4.5V, I =.7 R S(on) Static rain-to-source On-Resistance Ω 0.20 0.20 V GS = 2.7V, I = 0.85 V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 2.6 S V S = 0V, I = 0.85 I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 00 V GS = 2V n Gate-to-Source Reverse Leakage -00 V GS = -2V Q g Tota Gate Charge 5.3 8.0 I =.7 Q gs Gate-to-Source Charge 0.84.3 nc V S = 6V Q gd Gate-to-rain ("Mier") Charge 2.2 3.3 V GS = 4.5V, See Fig. 9 t d(on) Turn-On eay Time 5.7 V = 0V t r Rise Time 24 I =.7 ns t d(off) Turn-Off eay Time 5 R G = 6.0Ω t f Fa Time 6 R = 5.7Ω C iss Input Capacitance 260 V GS = 0V C oss Output Capacitance 30 pf V S = 5V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz, See Fig. 8 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo.25 (Body iode) showing the I SM Pused Source Current integra reverse G 9 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25 C, I S =.7, V GS = 0V ƒ t rr Reverse Recovery Time 39 59 ns T J = 25 C, I F =.7 Q rr Reverse Recovery Charge 37 56 nc di/dt = 00/µs ƒ S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 0 ) I S.7, di/dt 66/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2% Surface mounted on FR-4 board, t 0sec 2 www.irf.com
I, rain-to-source Current () 00 0 0. VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH 0.0 T J = 25 C 0. 0 V S, rain-to-source Votage (V) I, rain-to-source Current () 00 0 0. VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH 0.0 T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics 00 00 I, rain-to-source Current () 0 T J = 50 C T J = 25 C V S = 0V 20µs PULSE WITH 0..5 2.0 2.5 3.0 3.5 4.0 V GS, Gate-to-Source Votage (V) I S, Reverse rain Current () 0 T J= 50 C T J = 25 C V GS = 0V 0. 0.4 0.6 0.8.0.2.4.6.8 V S, Source-to-rain Votage (V) Fig 3. Typica Transfer Characteristics Fig 7. Typica Source-rain iode Forward Votage www.irf.com 3
R S(on), rain-to-source On Resistance (Normaized) 2.0.5.0 0.5 I =.7 V GS = 4.5V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) R S(on), rain-to-source On Resistance ( Ω ) 0.8 0.6 0.4 0.2 V = 2.5V GS V GS = 5.0V 0.0 0 2 4 6 I, rain Current () Fig 5. Normaized On-Resistance Vs. Temperature Fig 6. Typica On-Resistance Vs. rain Current R S(on), rain-to-source On Resistance (Ω ( Ω ) 0.3 0. 0.09 0.07 I = 2.4 0.05 2 3 4 5 6 7 8 V GS, Gate-to-Source Votage (V) Fig 7. Typica On-Resistance Vs. Gate Votage 4 www.irf.com
C, Capacitance (pf) 500 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd 400 C oss = C ds Cgd C iss 300 C oss 200 Crss 00 0 0 00 V S, rain-to-source Votage (V) -V GS, Gate-to-Source Votage (V) 0 8 6 4 2 I =.7 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE 9 0 2 4 6 8 0 Q G, Tota Gate Charge (nc) Fig 8. Typica Capacitance Vs. rain-to-source Votage Fig 9. Typica Gate Charge Vs. Gate-to-Source Votage 000 Therma Response (Z thj ) 00 = 0.50 0.20 0 0.0 0.05 PM 0.02 0.0 t t SINGLE PULSE 2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T 0. 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectanguar Puse uration (sec) Fig 0. Maximum Effective Transient Therma Impedance, Junction-to-mbient www.irf.com 5
Current Reguator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. V - S V G V GS 3m Charge I G I Current Samping Resistors Fig a. Basic Gate Charge Waveform Fig b. Gate Charge Test Circuit V S R R G V GS.U.T. - V 0V Puse Width µs uty Factor 0. % Fig 2a. Switching Time Test Circuit V S 90% 0% V GS t d(on) t r t d(off) t f Fig 2b. Switching Time Waveforms 6 www.irf.com
Peak iode Recovery dv/dt Test Circuit - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - dv/dt controed by R G I S controed by uty Factor "".U.T. - evice Under Test - * Reverse Poarity for P-Channe ** Use P-Channe river for P-Channe Measurements river Gate rive Period P.W. = P.W. Period V GS =0V.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3 For N Channe HEXFETS www.irf.com 7
Micro8 Package Outine imensions are shown in miimeters (inches) - B - 3 8 7 6 5 3 E H - - 0.25 (.00) M M 2 3 4 e 6X e - C - 0.0 (.004) B 8X 0.08 (.003) M C S B S θ LE SSIGNMENTS SINGLE S S S G L 8X 2 2 8 7 6 5 8 7 6 5 UL 2 3 4 2 3 4 S G S2 G2 C 8X INCHES MILLIMETERS IM MIN MX MIN MX.036.044 0.9..004.008 0.0 0.20 B.00.04 0.25 0.36 C.005.007 0.3 0.8.6.20 2.95 3.05 e.0256 BSIC 0.65 BSIC e.028 BSIC 0.33 BSIC E.6.20 2.95 3.05 H.88.98 4.78 5.03 L.06.026 0.4 0.66 θ 0 6 0 6.04 (.04 ) 8X RECOMMENE FOOTPRINT 3.20 (.26 ) 0.38 (.05 ) 8X 4.24 5.28 (.67 ) (.208 ) NOTES: IMENSIONING N TOLERNCING PER NSI Y4.5M-982. 2 CONTROLLING IMENSION : INCH. 3 IMENSIONS O NOT INCLUE MOL FLSH. 0.65 (.0256 ) 6X Micro8 Part Marking Information EXMPLE: THIS IS N IRF750 LOT COE (XX) PRT NUMBER TE COE (YW) - S ee tabe beow Y = YER W = WEEK P = ESIGNTES LE - FREE PROUCT (OPTIONL) WW = (-26) IF PRECEE BY LST IGIT OF CLENR YER YER Y 200 2002 2 2003 3 2004 4 2005 5 2006 2007 6 7 2008 8 2009 9 200 0 WORK WEEK 0 02 03 04 24 25 26 W B C X Y Z WW = (27-52) IF PRECEE BY LETTER WORK YER Y WEE K W 200 27 2002 B 28 B 2003 C 29 C 2004 30 2005 E 2006 F 2007 G 2008 H 2009 J 200 K 50 X 5 Y 52 Z 8 www.irf.com
Micro8 Tape & Ree Information imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. OUTLINE CONFORMS TO EI-48 & EI-54. 2. CONTROLLING IMENSION : MILLIMETER. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (30) 252-705 TC Fax: (30) 252-7903 Visit us at www.irf.com for saes contact information. 02/05 www.irf.com 9