V 2A Module MG2D-BN2MM RoHS Features High short circuit capability, self limiting short circuit current 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses Applications Agency Approvals AGENCY AGENCY FILE NUMBER Medical applications High frequency switching application Motion/servo control UPS systems E71639 Module Characteristics ( Symbol Parameters Test Conditions Min Typ Max Unit max Max. Junction Temperature 15 C op Operating Temperature - 5 C T stg Storage Temperature - 5 C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 35 Torque Module-to-Sink Recommended (M6) 3 5 N m Torque Module Electrodes Recommended (M6) 2.5 5 N m Weight 32 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 29 A =8 C 2 A I CM Repetitive Peak Collector Current t p =1ms A P tot Power Dissipation Per 15 W V RRM Repetitive Reverse Voltage =25 C V I F(AV) =25 C 29 A Average Forward Current =8 C 2 A I FRM Repetitive Peak Forward Current A I 2 t =5 C, t=1ms, V R =V 775 A 2 s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG2D-BN2MM 197 1 21 Littelfuse, Inc Revised:5/6/1
V 2A Module Electrical and Thermal Specifications ( Symbol Parameters Test Conditions Min Typ Max Unit V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =8mA 5. 5.8 6.5 V (sat) Collector - Emitter I C =2A, V GE =15V, =25 C 1.7 V Saturation Voltage I C =2A, V GE =15V, =5 C 1.9 V I ICES Collector Leakage Current =V, V GE =V, =25 C 1 ma =V, V GE =V, =5 C 5 ma I GES Gate Leakage Current =V, V GE =±15V, =5 C - na R Gint Integrated Gate Resistor 3.8 Ω Q ge Gate Charge =6V, I C =2A, V GE =±15V 1.9 μc C ies Input Capacitance 1 nf =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance.5 nf t d(on) t r t d(off) t f Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =2A R G =3.6Ω V GE =±15V Inductive Load =25 C 16 ns =5 C 17 ns =25 C ns =5 C 5 ns =25 C 5 ns =5 C 52 ns =25 C 1 ns =5 C 16 ns =25 C 1 mj =5 C 15 mj =25 C 16.5 mj =5 C 25 mj I SC Short Circuit Current t psc 1μS, V GE =15V, =5 C, V CC =9V 8 A R thjc Junction-to-Case Thermal Resistance (Per ). K/W V F Forward Voltage I F =2A, V GE =V, =25 C 1.65 V I F =2A, V GE =V, =5 C 1.65 V t RR Reverse Recovery Time I F =2A, V R =6V 19 ns I RRM Max. Reverse Recovery Current di F /dt=-a/µs 36 A E rec Reverse Recovery Energy =5 C 17 mj R thjcd Junction-to-Case Thermal Resistance (Per ).2 K/W MG2D-BN2MM 198 2 21 Littelfuse, Inc Revised:5/6/1
V 2A Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 32 V GE =15V 32 V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V 2 =25 C 2 =5 C 16 =5 C 16 8 8.5 1. 1.5 2. 2.5 V 3..5 1. 1.5 2. 2.5 3. 3.5..5 5. V Figure 3: Typical Transfer characteristics Figure : Switching Energy vs. Gate Resistor 32 =2V 1 8 =6V I C=2A V GE=±15V =5 C 2 16 =25 C =5 C Eon Eoff (mj) 6 8 2 5 6 7 8 9 1 11 V GE V 8 16 2 2 28 32 36 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area Eon Eoff (mj) 6 5 3 2 1 =6V R G=3.6Ω V GE=±15V =5 C 5 35 3 25 2 15 1 5 RG=3.6Ω VGE=±15V =5 C 5 1 15 2 25 3 35 I C A 2 6 8 1 V 1 MG2D-BN2MM 199 3 21 Littelfuse, Inc Revised:5/6/1
V 2A Module Figure 7: Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 32 2 2 I F=2A =6V Tj =5 C IF (A) 2 16 =5 C Erec (mj) 16 8 8 =25 C.6 1.2 1. 8 V F V 2. 8 16 2 2 28 32 36 R G Ω Figure 9: Switching Energy vs. Forward Current Figure 1: Transient Thermal Impedance 2 1 2 R G=3.6Ω =6V T j =5 C Erec (mj) 16 8 ZthJC (K/W).1.1 5 1 15 2 25 3 35 I F (A).1.1.1.1 1 1 Rectangular Pulse Duration (seconds) MG2D-BN2MM 2 21 Littelfuse, Inc Revised:5/6/1
V 2A Module Dimensions-Package D Circuit Diagram M6 2.8x.5 8.5 3. 3.5 93. 22. 6. 6.5 18 6. 8. 16. 1 2 3 5 7 6 15. 62. 6. 28. 28. 18. 2. Packing Options Part Number Marking Weight Packing Mode M.O.Q MG2D-BN2MM MG2D-BN2MM 32g Bulk Pack 6 Part Numbering System Part Marking System MG2 D - B N2 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: VOLTAGE RATING : V CURRENT RATING 2: 2A WAFER TYPE CIRCUIT TYPE 2x(+FWD) PACKAGE TYPE MG2D-BN2MM LOT NUMBER MG2D-BN2MM 21 5 21 Littelfuse, Inc Revised:5/6/1