7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless otherwise specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 12 ±2 IC Continuous Tc= C 5 Collector current Tc=8 C 35 ICP 1ms Tc= C Tc=8 C 1 7 -IC -IC pulse Duty=7% 1ms 5 1 Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC 1 device Continuous Tc= C Tc=8 C 12 ±2 15 W ICP 1ms Tc= C Tc=8 C 5 3 Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage PC RRM RRM 1 device 115 12 16 W verage output current Surge current (Non-Repetitive) IO IFSM 5Hz/6Hz sine wave Tj=15 C, 1ms 5 26 I 2 t (Non-Repetitive) I 2 t half sine wave 338 2 s Operating junction temperature Storage temperature Isolation between terminal and copper base *2 Tj Tstg iso C : 1 minute +15 - to +1 C C C voltage between thermistor and others *3 C Mounting screw torque 3.5 *1 N m *1 Recommendable value : 2.5 to 3.5 N m (M5) *2 ll terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Converter Brake Inverter
7MBR5U12 Elecical characteristics ( unless otherwise specified) Item Symbol Condition Characteristics Unit Thermistor Converter Brake Inverter Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current ICES IGES CE=12, GE= CE=, GE=±2 1. 2 m n Gate-Emitter threshold voltage GE(th) CE=2, IC=5m.5 6.5 8.5 Collector-Emitter saturation voltage CE(sat) GE=15 2. 2.8 (terminal) CE(sat) Ic=5 2. 2. 2. (chip) 2.35 Input capacitance Turn-on time Cies GE=, CE=1, f=1mhz CC=6.53 1.2 nf µs IC=5.3.6 Turn-off time (i) GE=±15 RG= 33 Ω.3.37 1..7.3 Forward on voltage F GE= 2. 2.8 (terminal) F IF=5 2.65 2. 2. (chip) 2. Reverse recovery time r IF=5.35 µs Zero gate voltage collector current Gate-Emitter leakage current ICES IGES CE=12, GE= CE=, GE=±2 1. 2 m n Collector-Emitter saturation voltage CE(sat) IC= 2.3 2.8 (terminal) CE(sat) GE=15 2. 2.1 2.6 Turn-on time (chip) CC=6 2.55.53 1.2 µs IC=.3.6 Turn-off time GE=±15.37 1. Reverse current IRRM RG= 68 Ω R=12.7.3 1. m Forward on voltage FM IF=5 terminal 1.55 1.9 GE= chip 1. Reverse current Resistance IRRM R R=16 T= C 5 1. m Ω B value B T=1 C T=/5 C 65 335 95 33 52 35 K Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT.6 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD.95 Brake IGBT 1.7 C/W Converter Diode.9 Contact thermal resistance * Rth(c-f) With thermal compound.5 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Thermistor] 8 9 2(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 15(Ew) 7(B) (U) 5() 6(W) 1(Gb) 13(Gx) 12(Gy) 11(Gz) 1(En) 23(N) 2(N1)
7MBR5U12 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= C / chip Tj= 1 C / chip 1 1 5 GE=2 15 12 1 5 GE=2 15 12 1 8 8 1 2 3 5 1 2 3 5 Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) GE=15 / chip / chip 1 1 5 Collector - Emitter voltage : CE [ ] 8 6 2 Ic=7 Ic=35 Ic=17.5 1 2 3 5 5 1 15 2 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=5, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Cies Cres Coes 1 2 3 Collector-Emitter voltage : CE [ 2/div ] Gate - Emitter voltage : GE [ 5/div ] GE CE 5 1 15 2 Gate charge : Qg [ nc ]
7MBR5U12 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) cc=6, GE=±15, Rg=33Ω, Tj= C cc=6, GE=±15, Rg=33Ω, 1 1 Switching time :,,, [ nsec ] 1 1 Switching time :,,, [ nsec ] 1 1 1 1 2 3 5 6 7 1 1 2 3 5 6 7 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=6, Ic=5, GE=±15, Tj= C cc=6, GE=±15, Rg=33Ω 1 2 Switching time :,,, [ nsec ] 1 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] 16 12 8 Eon(1 C) Eon( C) Eoff(1 C) Eoff( C) Err(1 C) Err( C) 1 1. 1. 1. 1 2 3 5 6 7 8 9 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) cc=6, Ic=5, GE=±15, Tj= 1 C +GE=15,-GE <= 15, RG >= 33Ω,Tj <= 1 C 3 15 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon 2 1 Eoff Err 1. 1. 1. 1. 1 5 8 12 Gate resistance : Rg [ Ω ] Collector - Emitter voltage : CE [ ]
7MBR5U12 Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) cc=6, GE=±15, Rg=33Ω 1 Forward current : IF [ ] 5 Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r (1 C) r ( C) Irr (1 C) Irr ( C) 1 1 2 3 1 2 3 5 6 7 Forward on voltage : F [ ] Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip Forward current : IF [ ] 5..5 1. 1.5 2. 2.5 Forward on voltage : FM [ ] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 1. 1 Thermal resistanse : Rth(j-c) [ C/W ] 1..1 IGBT[Brake] FWD[Inverter] Conv.Diode IGBT[Inverter] Resistance : R [ kω ] 1 1.1.1.1.1 1. Pulse width : Pw [ sec ].1-6 - -2 2 6 8 1 12 1 16 18 Temperature [ C ]
7MBR5U12 [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= C / chip Tj= 1 C / chip GE=2 15 12 GE=2 15 12 3 3 2 1 1 2 1 1 8 8 1 2 3 5 1 2 3 5 [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) GE=15 / chip / chip 1 3 2 1 Collector - Emitter voltage : CE [ ] 8 6 2 Ic=3 Ic=15 Ic=7.5 1 2 3 5 5 1 15 2 Gate - Emitter voltage : GE [ ] [ Brake ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Coes 1 2 Cies Cres Collector-Emitter voltage : CE [ 2/div ] Gate - Emitter voltage : GE [ 5/div ] GE CE 2 6 8 1 Gate charge : Qg [ nc ]
7MBR5U12 Outline Drawings, mm