HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Key Parameters Parameter Value Unit BS @T j,max 850 V I D 6.6 A R DS(on), max 0.85 Ω Qg, Typ 8.6 nc Package & Internal Circuit G D S TO-0F May 08 Absolute Maximum Ratings T J =5 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Gate-Source Voltage ±30 V I D Drain Current Continuous (T C = 5 ) 6.6 * A Drain Current Continuous (T C = 00 ) 4. * A I DM Drain Current Pulsed (Note ) 0 * A E AS Single Pulsed Avalanche Energy (Note ) 86 mj dv/dt MOSFET dv/dt ruggedness, =0 640V 50 V/ns dv/dt Reverse diode dv/dt, =0 640V, I DS I D 5 V/ns P D Power Dissipation (T C = 5 ) 8 W T J, T STG Operating and Storage Temperature Range -55 to +50 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics 300 Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 4.5 R θja Junction-to-Ambient -- 6.5 /W SEMIHOW REV.A0, May 08
Electrical Characteristics T J =5 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, I D = 50 μa.5 -- 4.5 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 50 μa 800 -- -- V I DSS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 800 V, = 0 V -- -- 0 μa = 800 V, T J = 50 -- -- 00 μa I GSS Gate-Body Leakage Current = 30 V, = 0 V -- -- ±00 na Dynamic Characteristics = 0 V, I D = 3.5 A -- 0.75 0.85 Ω C iss Input Capacitance -- 380 -- pf C oss Output Capacitance = 00 V, = 0 V, f =.0 MHz -- 30 -- pf C rss Reverse Transfer Capacitance -- 4.6 -- pf Switching Characteristics t d(on) Turn-On Time -- 3 -- ns t r Turn-On Rise Time = 400 V, I D = 3.5 A, -- 0 -- ns t d(off) Turn-Off Delay Time R G = 5 Ω -- 85 -- ns t f Turn-Off Fall Time -- 4 -- ns Q g Total Gate Charge -- 8.6. nc Q gs Gate-Source Charge = 640 V, I D = 3.5 A = 0 V --.9 -- nc Q gd Gate-Drain Charge -- 3.5 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 6.6 I SM Pulsed Source-Drain Diode Forward Current -- -- 0 V SD Source-Drain Diode Forward Voltage I S = 3.5 A, = 0 V -- --.5 V trr Reverse Recovery Time I S = 3.5 A, = 0 V -- 90 -- ns Qrr Reverse Recovery Charge di F /dt = 00 A/μs --.3 -- μc Notes ;. Repetitive Rating : Pulse width limited by maximum junction temperature. I AS =.7A, =50V, R G =5Ω, Starting T J =5 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle % A SEMIHOW REV.A0, May 08
Typical Characteristics I D, Drain Current [A] 5.0.0 9.0 6.0 3.0 0.0.8.6.4 0 5 0 5 0, Drain-Source Voltage [V] Figure. On Region Characteristics 5.0 0V 0V 8V 5 7V.0 6V 5.5V 5V I D, Drain Current [A] 9.0 6.0 3.0 0.0 E+0 E+0 E+00 0 4 6 8 0, Gate-Source Voltage [V] 50. = 0 V. 300us Pulse Test Figure. Transfer Characteristics R DS(ON) [Ω]..0 0.8 I F [A] E-0 E-0 E-03 50 5 0.6 0.4 0 4 6 8 0 4 6 I D [A]. = 0 V. T J = 5 Figure 3. On Resistance Variation vs Drain Current and Gate Voltage E-04 E-05 0 0. 0.4 0.6 0.8. V SD [V]. = 0 V. 300us Pulse Test Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 000 Capacitances [pf] 00 0 Ciss Coss Crss 0 00 00 300 400 500 600 700 800 Drain-Source Voltage [V]. = 0 V. f = MHz [V] 0 8 6 4 0 0 4 6 8 0 Q G [nc] 60V 400V 640V. I D = 3.5 A Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.A0, May 08
Typical Characteristics (continued) I D [A] B VDSS (Normalized).. 0.9. = 0 V. I D = 50 ua 0.8-00 -50 0 50 00 50 00 00 0 0. T J [ ] Figure 7. Breakdown Voltage Variation vs Temperature DC 0ms ms 00us 0us R DS(on) (Normalized) I D [A].5.5 0.5. = 0 V. I D = 3.5 A 0-00 -50 0 50 00 50 00 7 6 5 4 3 T J [ ] Figure 8. On-Resistance Variation vs Temperature 0.0. T C = 5. T J(MAX) = 50 3. Single Pulse 0.00 0. 0 00 000 [V] Figure 9. Maximum Safe Operating Area 0 5 50 75 00 5 50 T C [ ] Figure 0. Maximum Drain Current vs Case Temperature 0 0.5 Z θjc [K/W] 0. 0. 0. 0.05 0.0 0.0 single pulse 0.0 E-05 0.000 0.00 0.0 0. 0 t P [S] Figure. Transient Thermal Response Curve SEMIHOW REV.A0, May 08
V 00nF 3mA 50KΩ 300nF Fig. Gate Charge Test Circuit & Waveform Same Type as Fig 3. Resistive Switching Test Circuit & Waveforms R L 0V Q gs 90% Q g Q gd Charge R G ( 0.5 rated ) 0V V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I AS BS -------------------- BS -- I D BS I AS R G I D (t) 0V (t) t p Time SEMIHOW REV.A0, May 08
Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop SEMIHOW REV.A0, May 08
Package Dimension 5.87±0.0 3.30±0.0.47max 0.6±0.0 TO-0F φ3.8±0.0 9.75±0.0.4±0.0 6.68±0.0 0.80±0.0 4.70±0.0.54±0.0 0.50±0.0 0.70±0.0 Pin hole.76±0.0 0.6±0.0 φ3.8±0.0 4.70±0.0.54±0.0 0.70±0.0 5.87±0.0 3.30±0.0.4±0.0 6.68±0.0 TO-0F-FM(Full Mold).76±0.0.47max 9.75±0.0 0.80±0.0 0.50±0.0 SEMIHOW REV.A0, May 08