TVS diodes can be used in a wide range of applications which like consumer electronic products, automotive industries, munitions, telecommunications, aerospace industries, and intelligent control systems. Working Voltage: to 85 V Peak Pulse Power: 4 W Glass passivated chip 4 W peak pulse power capability with a / μ s waveform, repetitive rate (duty cycle):. % High reliability application and automotive grade AEC Q qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Case: Molded plastic Epoxy: UL 94V- rate flame retardant Lead: Solderable per MIL-STD-75, method 226 guranteed Polarity: Color band denotes cathode end except Bipolar Mounting position: Any TVS devices are ideal for the protection of I/O interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Parameter Symbol Value Units Peak power dissipation with a /μs waveform () PPPM 4 W Power Dissipation on Infinite Heat Sink at TL=75 C PD. W Peak pulse current with a /μs waveform () I PP See Next Table A Operating junction and storage temperature range T J, T STG -55 to +5 C Instantaneous Forward Voltage at 5A for Unidirectional (3) VF 3.5/5. V Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2) IFSM 4 A Note: ()Non-repetitive current pulse per Fig.5 and derated above TA= 25 per Fig. (2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3)VF<3.5V for devices of VBR<2V and VF<5.V for devices of VBR>2V Revision July 8, 28 / 5 @ UN Semiconductor Co., Ltd. 28
Part Number Marking Reverse Stand-Off Voltage VRWM(V) Breakdown Voltage VBR (V) Uni Bi Uni Bi MIN MAX @IT Test Current IT (ma) Clamping Voltage VC @IPP (V) Peak Pulse Current IPP (A) Reverse Leakage IR TPSMAJA TPSMAJCA AXA WXA.. 2.3 7. 23.53 5 TPSMAJA TPSMAJCA AZA WZA. 2.2 3.5 8.2 2.98 TPSMAJ2A TPSMAJ2CA BEA XEA 2. 3.3 4.7 9.9 2. TPSMAJ3A TPSMAJ3CA BGA XGA 3. 4.4 5.9 2.5 8.6 TPSMAJ4A TPSMAJ4CA BKA XKA 4. 5.6 7.2 23.2 7.24 TPSMAJ5A TPSMAJ5CA BMA XMA 5. 6.7 8.5 24.4 6.39 TPSMAJ6A TPSMAJ6CA BPA XPA 6. 7.8 9.7 26. 5.38 TPSMAJ7A TPSMAJ7CA BRA XRA 7. 8.9 2.9 27.6 4.49 TPSMAJ8A TPSMAJ8CA BTA XTA 8. 2. 22. 29.2 3.7 TPSMAJ9A TPSMAJ9CA BBA XBA 9. 2. 23.3 29.2 3. TPSMAJ2A TPSMAJ2CA BVA XVA 2. 22.2 24.5 32.4 2.35 TPSMAJ22A TPSMAJ22CA BXA XXA 22. 24.4 26.9 35.5.27 TPSMAJ24A TPSMAJ24CA BZA XZA 24. 26.7 29.5 38.9.28 TPSMAJ26A TPSMAJ26CA CEA YEA 26. 28.9 3.9 42. 9.5 TPSMAJ28A TPSMAJ28CA CGA YGA 28. 3. 34.4 45.4 8.8 TPSMAJ3A TPSMAJ3CA CKA YKA 3. 33.3 36.8 48.4 8.26 TPSMAJ33A TPSMAJ33CA CMA YMA 33. 36.7 4.6 53.3 7.5 TPSMAJ36A TPSMAJ36CA CPA YPA 36. 4. 44.2 58. 6.88 TPSMAJ4A TPSMAJ4CA CRA YRA 4. 44.4 49. 64.5 6.2 TPSMAJ43A TPSMAJ43CA CTA YTA 43. 47.8 52.8 69.4 5.76 TPSMAJ45A TPSMAJ45CA CVA YVA 45. 5. 55.3 72.7 5.5 TPSMAJ48A TPSMAJ48CA CXA YXA 48. 53.3 58.9 77.4 5.7 TPSMAJ5A TPSMAJ5CA CZA YZA 5. 56.7 62.7 82.4 4.85 TPSMAJ54A TPSMAJ54CA REA ZEA 54. 6. 66.3 87. 4.59 TPSMAJ58A TPSMAJ58CA RGA ZGA 58. 64.4 7.2 93.6 4.27 TPSMAJ6A TPSMAJ6CA RKA ZKA 6. 66.7 73.7 96.8 4.3 TPSMAJ64A TPSMAJ64CA RMA ZMA 64. 7. 78.6 3. 3.88 TPSMAJ7A TPSMAJ7CA RPA ZPA 7. 77.8 86. 3. 3.54 TPSMAJ75A TPSMAJ75CA RRA ZRA 75. 83.3 92. 2. 3.3 TPSMAJ78A TPSMAJ78CA RTA ZTA 78. 86.7 95.8 26. 3.7 TPSMAJ8A TPSMAJ8CA RBA ZBA 8. 88.8 97.6 29.6 3.9 TPSMAJ85A TPSMAJ85CA RVA ZVA 85. 94.4 4. 37. 2.92 Note: () Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices (2) For Bi-Directional devices having VR of volts and under, the IR limit is double @VRWM (μa) Revision July 8, 28 2 / 5 @ UN Semiconductor Co., Ltd. 28
Peak Pulse Current, (% ) 5 td Tr=μs Peak Value (Ipp) T J = 25 C Pulse Width (td) is defined as the point where the peak current decays to 5 % of Ipp.2.5 76 5.5 33 2 23 Half Value = Ipp 2 / μsec. Waveform as defined by R.E.A. 3 3 4 Peak Pulse Derating in Percentage of Peak Power or Current, (%) 75 5 25 2 3 4 25 5 75 25 5 75 2 Time, (ms) Ambient Temperature,T A ( ) Peak Power (kw). 6 ####.2 Steady State Power Dissipation, (W)..8.6.4.2.. Pulse Width,t d (μs). 25 5 75 25 5 75 2 Lead Temperature, T L ( ) Revision July 8, 28 3 / 5 @ UN Semiconductor Co., Ltd. 28
Peak Forward Surge Current, (A) 5 T J = T J max. 8.3 ms Single Half Sine-Wave 4 2 3 2 Number of Cycles at 6 Hz Junction Capacitance,C J (pf) 5 45 3 5 5 45 2 22 Uni-directi 5 onal 4 @ 5 V RWM 65 4 5 45 4 5 T J =25 C f=.mhz Bi-directional @zero bias Uni-directional @zero bias Bi-directional @V RWM Reverse Breakdown Voltage,V BR (V) T P S M A J C A 5% VBR Voltage Tolerance Uni/Bi-Directional VR Voltage Automotive Series Revision July 8, 28 4 / 5 @ UN Semiconductor Co., Ltd. 28
Reflow Condition Lead free assembly TP Ramp-up Critical Zone TL to TP -Temperature Min (Ts(min)) 5 C TL Pre Heat -Temperature Max (Ts(max)) 2 C Temperature T S(max) T S(min) 25 Preheat Time to peak temperature (t 25 to peak) Ramp-down Time - Time (min to max) (ts) 6-8 Seconds Average ramp up rate ( Liquidus Temp TL) to peak TS(max) to TL - Ramp-up Rate Reflow - Temperature (TL) (Liquidus) 27 C 3 C/second max 3 C/second max - Time (min to max) (ts) 6-5 Seconds Peak Temperature (TP) 26 +/-5 C Time within 5 C of actual peak Temperature (tp) Ramp-down Rate Time 25 C to peak Temperature (TP) 2-4 Seconds 6 C/second max 8 minutes Max Do not exceed 28 C Dimensions DO-24AC (SMA) Cathode Band Dimensions Inches Millimeters Min Max Min Max A.49.64.23.63 B.62.79 4. 4.55 C.99.9 2.5 2.76 D.77.89.96 2.26 E.3.6.75.5 F -.8 -.23 G.92.26 4.87 5.22 H.6.2.52.35 I.7 -.8 - J.82-2. - K -.9-2.3 L.82-2. - Revision July 8, 28 5 / 5 @ UN Semiconductor Co., Ltd. 28