Ordering number : ENAE SK48LS N-Channel Power MOSFET 6V, 14A, 61mΩ, TO-F-FS http://onsemi.com Features ON-resistance RDS(on)=.4Ω (typ.) 1V drive Input capacitance Ciss=1pF (typ.) Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 6 V Gate-to-Source Voltage VGSS ± V IDc *1 Limited only by maximum temperature Tch=1 C 14 A Drain Current (DC) IDpack * Tc= C (Our ideal heat dissipation condition)* 9. A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% A Allowable Power Dissipation PD. W Tc= C (Our ideal heat dissipation condition)* 4 W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Avalanche Energy (Single Pulse) *4 EAS 16 mj Avalanche Current * IAV 14 A *1 Shows chip capability. * Package limited. * Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=V, L=1mH, IAV=14A (Fig.1) * L 1mH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 8-1.18 1.16 4..4 SK48LS-1E Product & Package Information Package : TO-F-FS JEITA, JEDEC : SC-6 Minimum Packing Quantity : pcs./magazine Marking Electrical Connection. 6.68 1.8 1.8. K48 LOT No. 1.6 1.4 MAX.8 1.98 1.4.4. 1 : Gate : Drain : Source TO-F-FS Semiconductor Components Industries, LLC, 1 July, 1 4111 TKIM TC-44/O1 TIIM TC-9/44QB TIIM TC-6/1QB TIIM TC-1 No. A-1/ O11 TKIM TC-84
SK48LS Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=V 6 V Zero-Gate Voltage Drain Current IDSS VDS=48V, VGS=V 1 μa Gate-to-Source Leakage Current IGSS VGS=±V, VDS=V ±1 na Cutoff Voltage VGS(off) VDS=1V, ID=1mA V Forward Transfer Admittance yfs VDS=1V, ID=A 4 8 S Static Drain-to-Source On-State Resistance RDS(on) ID=A, VGS=1V.4.61 Ω Input Capacitance Ciss 1 pf Output Capacitance Coss VDS=V, f=1mhz pf Reverse Transfer Capacitance Crss pf Turn-ON Delay Time td(on) ns Rise Time tr ns See Fig. Turn-OFF Delay Time td(off) 144 ns Fall Time tf 48 ns Total Gate Charge Qg 46 nc Gate-to-Source Charge Qgs VDS=V, VGS=1V, ID=14A 8.6 nc Gate-to-Drain Miller Charge Qgd 6.4 nc Diode Forward Voltage VSD IS=14A, VGS=V.9 1. V Fig.1 Unclamped Inductive Switching Test Circuit Fig. Switching Time Test Circuit 1V V Ω RG Ω L SK48LS VDD 1V V V IN PW 1μs D.C. 1% V IN G V DD =V D I D =A R L =8Ω V OUT P.G Ω S SK48LS Ordering Information Device Package Shipping memo SK48LS-1E TO-F-FS pcs./magazine Pb Free 1 1 Tc= C ID -- VDS 1V 1V 8V 6V 4 1 1 VDS=V ID -- VGS Tc= -- C C C V GS =V 1 1 Drain-to-Source Voltage, V DS -- V IT11 4 6 8 1 1 14 16 18 Gate-to-Source Voltage, V GS -- V IT114 No. A-/
SK48LS Static Drain-to-Source On-State Resistance, R DS (on) -- Ω. 1.8 1.6 1.4 1. 1..8.6.4. RDS(on) -- VGS I D =A Tc= C C -- C Static Drain-to-Source On-State Resistance, R DS (on) -- Ω 1.4 1. 1..8.6.4. RDS(on) -- Tc ID=A, V GS =1V Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns 1 1. 9 11 1 1 -- -- 1 1 1 Gate-to-Source Voltage, V GS -- V IT11 Case Temperature, Tc -- C IT116 yfs -- ID IS -- VSD V DS =1V V GS =V ÔTc= -- C Ô C.1 1. 1 IT11 SW Time -- ID 1 V DD =V V GS =1V 1 C td(off) Ôt d (on) t r tf Source Current, I S -- A Ciss, Coss, Crss -- pf 1 1..1 Tc= C C -- C.1..4.6.8 1. 1. 1.4 Diode Forward Voltage, V SD -- V IT118 1 1 1 Ciss, Coss, Crss -- VDS f=1mhz ÔCiss Coss Ô Crss Ô Gate-to-Source Voltage, V GS -- V 1.1 1. 1 IT119 1 VGS -- Qg V DS =V 9 I D =14A 8 6 4 1 1 4 Total Gate Charge, Qg -- nc IT1161 1 1 1 1. 1 1 4 4 Drain-to-Source Voltage, V DS -- V IT116 IDP =A(PW 1μs) I Dc (*1)=14A I Dpack (*)=9.A Operation in this area is limited by R DS (on). A S O 1ms 1ms DC operation 1μs 1ms 1μs.1 Tc= C *1. Shows chip capability.1 Single pulse *. Our ideal heat dissipation condition 1. 1 1 1 Drain-to-Source Voltage, V DS -- V IT1681 No. A-/
SK48LS. PD -- Ta 4 PD -- Tc Allowable Power Dissipation, P D -- W. 1. 1.. Allowable Power Dissipation, P D -- W 4 1 1 1 4 6 8 1 1 Ambient Temperature, Ta -- C EAS -- Ta 14 16 4 6 8 1 1 IT11 Case Temperature, Tc -- C 14 16 IT114 Avalanche Energy derating factor -- % 1 8 6 4 1 1 1 1 Ambient Temperature, Ta -- C IT148 No. A-4/
SK48LS Magazine Specification SK48LS-1E No. A-/
SK48LS Outline Drawing SK48LS-1E Mass (g) Unit 1.8 * For reference mm No. A-6/
SK48LS Note on usage : Since the SK48LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A-/