P6SMB-E Series RoHS Pb e3 Description The P6SMB-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted Parameter Symbol Value Unit Peak Pulse Power Dissipation at T A =25ºC by 1/µs Waveform (Fig.2(Note 1, (Note 2 Power Dissipation on Infinite Heat Sink at T L =5 O C Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3 Instantaneous Forward Voltage at 5A for Unidirectional Only 6 W P D 5. W I FSM A V F 3.5 V Operating Temperature Range T J -65 to 15 C Storage Temperature Range T STG -65 to 175 C Typical Thermal Resistance Junction to Lead Typical Thermal Resistance Junction to Ambient R θjl 2 C/W R θja C/W Notes: 1. Non-repetitive current pulse, per Fig. 4 and derated above T J (initial =25 O C per Fig. 3. 2. Mounted on copper pad area of.2x.2 (5. x 5.mm to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. Features Excellent clamping capability Low incremental surge resistance For surface mounted applications to optimize board space Low profile package Typical failure mode is short from over-specified voltage or current Whisker test is conducted based on JEDEC JESD21A per its table 4a and 4c IEC-6-4-2 ESD 3kV(Air, 3kV (Contact ESD protection of data lines in accordance with IEC 6-4-2 EFT protection of data lines in accordance with IEC 6-4-4 Built-in strain relief Fast response time: typically less than 1.ps from V to BV min 6W peak pulse power capability at 1/μs waveform, repetition rate (duty cycles:.1% High temperature to reflow soldering guaranteed: 26 C/4sec @ T J = @25 C x (1+αT x (T J - 25 (αt:temperature Coefficient, typical value is.1% EPI silicon technology Meet MSL level1, per J-STD-2C, LF maximun peak of 26 C Matte tin lead free plated Halogen free and RoHS compliant Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(sn (IPC/JEDEC J-STD- 69A.1 Functional Diagram Bi-directional Applications Cathode Anode TVS devices are ideal for the protection of I/O Interfaces, V CC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications.
Electrical Characteristics (T A =25 C unless otherwise noted Part Number (Uni Marking I-V Curve Characteristics Reverse Stand off Voltage V R (Volts Breakdown Voltage (Volts @ I T MIN MAX Test Current I T (ma Clamping Voltage V C @ I pp (V Peak Pulse Current I pp (A Reverse Leakage I R @ V R (µa P6SMB35A-E 35S 3 332. 368. 1 482. 1.3 1 P6SMB4A-E 4S 342 38. 42. 1 548. 1.1 1 P6SMB44A-E 44S 376 418. 462. 1 62. 1. 1 P6SMB48A-E* 48S 48 456. 54. 1 658..95 1 P6SMB51A-E* 51S 434 485. 535. 1 698..86 1 P6SMB53A-E* 53S 451 53.5 556.5 1 725..83 1 P6SMB54A-E* 54S 46 513. 567. 1 74..82 1 P6SMB55A-E* 55S 468 522.5 577.5 1 76..79 1 P6SMB6A-E* 6S 51 57. 63. 1 822..73 1 P6SMB65A-E* 65S 553 617.5 682.5 1 891..68 1 P6SMB7A-E* 7S 595 665. 735. 1 959..63 1 P6SMB8A-E* 8S 68 76. 84. 1 196..55 1 P6SMB9A-E* 9S 765 855. 945. 1 1233..5 1 P6SMBA-E* S 85 95. 15. 1 1365..44 1 Note: for parts with * are still under development Vc VBR VR IR IT VF V Ipp Peak Pulse Power Dissipation -- Max power dissipation V R Stand-off Voltage -- voltage that can be applied to the TVS without operation Breakdown Voltage -- voltage that flows though the TVS at a specified test current (I T V C Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current I R V F Reverse Leakage Current -- Current measured at V R Forward Voltage Drop for
Ratings and Characteristic Curves (T A =25 C unless otherwise noted Figure 1 - TVS Transients Clamping Waveform Figure 2 - Peak Pulse Power Rating Voltage Transients TJ initial = Tamb Voltage or Current Voltage Across TVS Current Through TVS -Peak Pulse Power (kw 1 1.1.1.1.1 1 1 Time t d -Pulse Width (ms Figure 3 - Peak Pulse Power Derating Curve Figure 4 - Pulse Waveform Peak Pulse Power (P PP or Current (I PP Derating in Percentage % 8 6 4 2 25 5 75 125 15 175 T J - Initial Junction Temperature (ºC I PPM - Peak Pulse Current, % I RSM 15 5 td tr=1µsec Peak Value IPPM Half Value IPPM 2 IPPM ( TJ=25 C Pulse Width(td is defined as the point where the peak current decays to 5% of IPPM 1/µsec. Waveform as defined by R.E.A 1. 2. 3. 4. t-time (ms Figure 5 - Typical Junction Capacitance Figure 6 - Typical Transient Thermal Impedance. Cj (pf. 1. Transient Thermal Impedance ( C/W 1 1 1. - Reverse Breakdown Voltage (V.1.1.1.1 1 1 T -Pulse Duration (s P
Temperature (T TVS Diodes Figure 7 - Non-Repetitive Peak Forward Surge Current Uni-Directional Only Figure 8 - Peak Forward Voltage Drop vs Peak Forward Current (Typical Values 12. I FSM - Peak Forward Surge Current (A 8 6 4 2 1 1 Number of Cycles at 6 Hz IF - Peak Forward Current(A 1. 1..1. 1. 2. 3. 4. 5. 6. 7. 8. 9. VF - Peak Forward Voltage(V Soldering Parameters Reflow Condition Lead free assembly t p Pre Heat Physical Specifications Weight Case Polarity - Temperature Min (T s(min 15 C - Temperature Max (T s(max 2 C - Time (min to max (t s 6 18 secs Average ramp up rate (Liquidus Temp (T A to peak T S(max to T A - Ramp-up Rate Reflow - Temperature (T A (Liquidus 217 C.3 ounce,.93 grams 3 C/second max 3 C/second max - Time (min to max (t s 6 15 seconds Peak Temperature (T P 26 +/-5 C Time within 5 C of actual peak Temperature (t p Ramp-down Rate Time 25 C to peak Temperature (T P Do not exceed 26 C 2 4 seconds 6 C/second max 8 minutes Max. JEDEC DO214AA. Molded plastic body over glass passivated junction Color band denotes cathode except Bidirectional T P T L T s(max T s(min 25 C t s Preheat t 25 C to Peak Environmental Specifications High Temp. Storage HTRB Temperature Cycling Ramp-up Time (t JESD22-A13 JESD22-A18 JESD22-A14 t L Critical Zone T L to T P Ramp-down MSL JEDEC-J-STD-2, Level 1 H3TRB JESD22-A11 Terminal Matte Tin-plated leads, Solderable per JESD22-B12 RSH JESD22-A111
Dimensions I A D E DO-214AA (SMB J-Bend J Cathode Band (for products only B F G K L H C Dimensions Inches Millimeters Min Max Min Max A.76.86 1.93 2.2 B.16.187 4.6 4.75 C.13.155 3.3 3.94 D.78.13 1.99 2.61 E.3.6.76 1.52 F -.8 -.23 G.25.22 5.21 5.59 H.6.12.152.35 I.89-2.26 - J.85-2.16 - K -.17-2.74 L.85-2.16 - Solder Pads Part Numbering System (all dimensions in mm Part Marking System P6SMB xxx A-E EPI SILICON TECHNOLOGY 5% VOLTAGE TOLERANCE VOLTAGE SERIES F XX YMXXX Cathode Band (for products only Littelfuse Logo Marking Code Trace Code Marking Y:Year Code M: Month Code XXX: Lot Code Part number Component Package Quantity Option Specification P6SMBxxxA-E DO-214AA 3 Tape & Reel - 12mm tape/13 reel EIA STD RS-481 Tape and Reel Specification.157 (4..47 (12. Cathode.315 (8..59 DIA (1.5 Cover tape.8 (2.2 Arbor Hole Dia. 13. (33 Dimensions are in inches (and millimeters..49 (12.5 Direction of Feed