200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 18A,200V,Max.R DS(on) =0.17 Ω @ V GS =10V Low gate charge(typical 22nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 200 V V GS Gate-Source Voltage ± 30 V I D T C = 25 18* A Drain Current T C = 100 11.3* A I DM Pulsed Drain Current (Note 1) 72* A I AS Single Pulsed Avalanche Current (Note 2) 18 A E AS Single Pulsed Avalanche Energy (Note 2) 453 Mj E AR Repetitive Avalanche Energy (Note 1) 13.9 mj I AR Repetitive Avalanche current (Note 1) 18 A P D Power Dissipation (T C = 25 ) 70 W T J, T STG Operating and Storage Temperature Range -55 to +150 * Drain current limited by maximum junction temperature. Thermal Resistance Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance,Junction-to-Case -- 1.79 /W R θja Thermal Resistance,Junction-to-Ambient -- 50 /W
Electrical Characteristics T C =25 unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics V GS Gate Threshold Voltage = V GS, I D = 250 ua μa 2.0 -- 4.0 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D =9A -- 0.14 0.17 Ω g fs Forward transfer conductance(note 3) = 10V, I D = 9A μa -- 10.5 -- S Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 ua μa 200 -- -- V I DSS Zero Gate Voltage Drain Current = 200 V, V GS = 0 V -- -- 1 ua = 160 V, T c =125 -- -- 100 ua I GSSF Gate-Body Leakage Current,Forward V GS = 30 V, = 0 V -- -- 100 na na I GSSR Gate-Body Leakage Current,Reverse V GS =- 30 V, = 0 V -- -- -100 na na Dynamic Characteristics C iss Input Capacitance -- 942 1240 pfpf C oss Output Capacitance = 25 V, V GS = 0 V, f = 1.0 MHz -- 227 310 pfpf C rss Reverse Transfer Capacitance -- 55 71 pf Switching Characteristics t d(on) Turn-On Time =125 V, I D =18A, -- 15 -- ns t r Turn-On Rise Time R G = 25 Ω -- 130 -- nsns t d(off) Turn-Off Delay Time (Note 3,4) -- 135 -- nsns t f Turn-Off Fall Time -- 105 -- ns ns Q g Total Gate Charge =160 V, I D = 18A, -- 22 28 nc Q gs Gate-Source Charge V GS = 10 V -- 6.6 -- nc Q (Note 3,4) gd Gate-Drain Charge -- 7.2 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 18 I SM Pulsed Source-Drain Diode Forward Current (Note 4) -- -- 72 V SD Source-Drain Diode Forward Voltage I S =18A, V GS = 0 V (Note 4) -- -- 1.4 V t rr Reverse Recovery Time I S =18A, V GS = 0 V -- 208 -- nsns Q rr Reverse Recovery Charge di F /dt = 100 A/μs -- 1.63 -- uc NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=2.1mH, I AS =18A, =50V, R G =25 Ω,Starting TJ=25 3. Pulse Test: Pulse width 300us, Duty Cycle 2% 4. Essentially Independent of Operating Temperature Typical Characteristics A
Typical Characteristics
Typical Characteristics
12V 200nF 50KΩ 300nF Fig 11. Gate Charge Test Circuit & Waveform Same Type as DUT V GS 10V Q g V GS Q gs Q gd 3mA DUT Charge Fig 12. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) 10V DUT V in 10% t d(on) t r t d(off) tf t on t off Fig 13. Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- L L I 2 2 AS I D BS I AS R G I D (t) 10V DUT (t) t p Time
Fig 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I S L Driver R G Same Type as DUT V GS dv/dt controlled by RG I S controlled by pulse period V GS ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 10V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension TO-252(D-PAK)(A)
Package Dimension TO-252(D-PAK)(B)