Preliminary Data Sheet No.PD 5-G IPS3/IPS3S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS3/IPS3S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.these device combine a HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 5 o C or when the drain current reaches A. These device restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary R ds(on) V clamp I shutdown T shutdown T on/ T off Available Package mw (max) 5V A 5 o C.5ms SMD IPS3S Typical Connection TO - IPS3 Load R in series (if needed) IN control ƒ D S Logic signal www.irf.com
Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 5 o C unless otherwise specified). PCB mounting uses the standard footprint with 7 mm copper thickness. Symbol Parameter Min. Max. Units Test Conditions V ds Maximum drain to source voltage 7 V in Maximum input voltage -.3 7 Iin, max Maximum IN current - + ma Isd cont. Diode max. continuous current () Thermal Characteristics (rth= o C/W) IPS3. TO free air (rth=5 o C/W) IPS3 A TO + good cooling (rth= o C/W) IPS3S. SMD Std. footprint Isd pulsed Diode max. pulsed current () Pd Maximum power dissipation () (rth= o C/W) IPS3 (rth= o C/W) IPS3S.5 ESD Electrostatic discharge voltage (Human Body) tbd C=pF, R=5W, V ESD Electrostatic discharge voltage (Machine Model) tbd C=pF, R=W, Tj max. Max. storage & operating junction temp. - +5 Tlead Lead temperature (soldering, seconds) 3 Symbol Parameter Min. Typ. Max. Units Test Conditions Rth Thermal resistance free air 55 Rth Thermal resistance junction to case 3 Rth Thermal resistance with standard footprint 5 Rth Thermal resistance with " square footprint 35 Rth 3 Thermal resistance junction to case 3 TO- D PAK (SMD) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous drain to source voltage 35 VIH High level input voltage V VIL Low level input voltage.5 Ids Continuous drain current Tamb=5 o C (TAmbient = 5 o C, IN = 5V, rth = o C/W, Tj = 5 o C) IPS3 3. A (TAmbient = 5 o C, IN = 5V, rth = o C/W, Tj = 5 o C) IPS3S. Rin Recommended resistor in series with IN pin. 5 kw Tr-in (max) Max recommended rise time for IN signal (see fig. ) ms Fr-Isc () Max. frequency in short circuit condition (Vcc = V) khz () Limited by junction temperature (pulsed current limited also by internal wiring) () Operations at higher switching frequencies is possible. See Appl. Notes. www.irf.com V W o C o C/W
Static Electrical Characteristics (Tj = 5 o C unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 5 o C @Tj=5 o C Rds(on) ON state resistance Tj = 5 o C 75 @Tj=5 o C Idss Drain to source leakage current.5 5 ma Vcc = V, Tj = 5 o C @Tj=5 o C V clamp Drain to source clamp voltage 7 5 Id = ma (see Fig.3 & ) V clamp Drain to source clamp voltage 5 Id=Ishutdown (see Fig.3 & ) Vsd Body diode forward voltage.5 Id = A, Vin = V V Vin clamp IN to source clamp voltage 7. 9.5 Iin = ma Vth IN threshold voltage. Id = 5mA Iin, on Input supply current (normal operation) 5 Vin = 5V Iin, off Input supply current (protection mode) 5 3 5 Vin = 5V ma over-current triggered mw Vin = 5V, Ids = 5A Switching Electrical Characteristics Vcc = V, Resistive Load = 5W (IPS3), Resistive Load = 3W (IPS3S), Rinput = 5W, msec pulse,t j = 5 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Toff Turn-on delay time Turn-off delay time. 3 Tr Tf Rise time Fall time.. Trf Time to 3% final Rds(on). msec See figure See figure Qin Total gate charge. nc Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 5 o C See fig. Isd Over current threshold A See fig. V in,min,prot Minimum IN voltage for protection 3 V Treset Minimum time for protection reset ms Vin = V EOI_OT Short circuit energy (cf application note) mj Vcc = V www.irf.com 3
Functional Block Diagram All values are typical DRAIN 7 V 3 W kw IN S Q 7.5 V ma R Q T > 5 c I sense I > Isd SOURCE Lead Assignments (D) (D) 3 In D S 3 In D S TO IPS3 Part Number D PAK (SMD) IPS3S www.irf.com
Case Outline 3 Lead - TO NOTES: X IRGB -3 Case Outline 3 Lead - D PAK (SMD) - 5 www.irf.com 5
Tape & Reel - D PAK (SMD) www.irf.com
Vin 5 V V Vin 9 % % Ids Isd I shutdown t < T reset t > T reset Ids Tr-in 9 % % T Tsd (5 c) T shutdown Vds Td on tr Td off tf Figure - Timing diagram Figure - IN rise time & switching time definitions T clamp Vin L V load Ids Vds Vds clamp ( Vcc ) Rem : V load is negative during demagnetization 5 v v Vin IN R D S Vds Ids + V - ( see Appl. Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms Figure - Active clamp test circuit www.irf.com 7
All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 9 7 Tj = 5 o C 5 Tj = 5 o C 3 3 5 7 5 3 9 7-5 -5 5 5 75 5 5 Figure 5 - Rds ON (mw ) Vs Input Voltage (V) Figure - Normalised Rds ON (%) Vs Tj ( o C) 9 7 5 3 ton delay rise time 3% final rdson 3 5 7 toff delay 9 fall time 7 5 3 3 5 7 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) Vs Input Voltage (V) Figure - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) www.irf.com
delay on rise time 3% rdson delay off fall time.. Figure 9 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) (us) Vs IN Resistor (W ) Figure - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (W ) Isd 5 C Ilim 5 C 3 5 7-5 -5 5 5 75 5 5 Figure - Current Iim. & Ishutdown (A) Vs Vin (V) Figure - Over-current (A) Vs Temperature ( o C) www.irf.com 9
rth = 5 C/W rth = 5 C/W free air 5 C/W o -5 5 5 rth = 5 C/W rth = 5 C/W " footprint 35 C/W std. footprint 5 C/W o -5 5 5 Figure 3a - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS3 Figure 3b - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) - IPS3S T=5 C T= C Current path capability should be above this curve single pulse m ax. current Hz rth= C/W dt=5 C khz rth= C/W dt=5 C Load characteristic should be below this curve. Vbat = V Tjini = T sd.. Figure - Ids (A) Vs Protection Resp. Time (s) IPS3 & IPS3S Figure 5 - Iclamp (A) Vs Inductive Load (mh) www.irf.com
rth TO free air rth TO 5 C/W. Single pulse. Single pulse.. Fig.a - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS3 Fig.b - Transient Thermal Imped. ( o C/W) Vs Time (s) - IPS3S WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 95 Tel: (3) 3 333 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH 9BB, UK Tel: ++ 3 73 IR CANADA: 5 Lincoln Court, Brampton, Ontario LT 3Z Tel: (95) 53- IR GERMANY: Saalburgstrasse 57, 35 Bad Homburg Tel: ++ 9 7 959 IR ITALY: Via Liguria 9, 7 Borgaro, Torino Tel: ++ 39 5 IR FAR EAST: K&H Bldg., F, 3- Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7 Tel: 3 393 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 3799 Tel: 5 3 3 IR TAIWAN: Fl. Suite D..7, Sec., Tun Haw South Road, Taipei, 73, Taiwan Tel: --377-993 http://www.irf.com/ Data and specifications subject to change without notice. 9/5/9 www.irf.com