DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated to +7 C Ideal for High mbient Temperature Environments % Unclamped Inductive Switching Ensures More Reliable and Robust End pplication High Conversion Efficiency Low R DS(ON) Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and ntimony Free. Green Device (Note 3) Qualified to EC-Q Standards for High Reliability PPP Capable (Note 4) Description and pplications This MOSFET is designed to meet the stringent requirements of utomotive applications. It is qualified to EC-Q, supported by a PPP and is ideal for use in: Backlighting Power Management Functions DC-DC Converters S Mechanical Data Case: PowerDI 6-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD- Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin nnealed over Copper Leadframe. Solderable per MIL-STD-2, Method 8 Weight:.97 grams (pproximate) D D G D S2 G G2 Ordering Information (Note ) Notes: Top View Pin Part Number Case Packaging -3 PowerDI6-8 (Type C) 2,/Tape & Reel. No purposely added lead. Fully EU Directive 2/9/EC (RoHS) & /6/EU (RoHS 2) compliant. 2. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds. 4. utomotive products are EC-Q qualified and are PPP capable. Please refer to http:///quality/product_compliance_definitions/.. For packaging details, go to our website at http:///products/packages.html. Marking Information Bottom View G2 Pin Out Top View S Equivalent Circuit S2 = Manufacturer s Marking H62SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 6 = 6) WW = Week ( - 3) PowerDI is a registered trademark of Diodes Incorporated. Document number: DS38 Rev. 2-2 of 7 June 6
DVNCE INFORMTION DVNCED INFORMTION Maximum Ratings (@T = +2 C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS 6 V Gate-Source Voltage V S ± V Continuous Drain Current (Note 7) V = V Continuous Drain Current (Note 8) V = V T = +2 C T = +7 C T C = +2 C T C = + C Pulsed Drain Current (38µs Pulse, Duty Cycle = %) I DM 8 Maximum Continuous Body Diode Forward Current (Note 8) I S 32 valanche Current, L =.mh (Note 9) I S 3 valanche Energy, L =.mh (Note 9) E S 64 mj I D I D 8.2 6. 32 22 Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P D. W Steady State 99 Thermal Resistance, Junction to mbient (Note 6) R θj C/W t<s 3 Total Power Dissipation (Note 7) P D 2.8 W Steady State 4 Thermal Resistance, Junction to mbient (Note 7) R θj C/W t<s 27 Thermal Resistance, Junction to Case (Note 8) R θjc 2.2 C/W Operating and Storage Temperature Range T J, T STG - to +7 C Electrical Characteristics (@T = +2 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS 6 V V = V, I D = μ Zero Gate Voltage Drain Current T J = +2 C I DSS µ V DS = 6V, V = V Gate-Source Leakage I S ± n V = ±V, V DS = V ON CHRCTERISTICS (Note ) Gate Threshold Voltage V (TH) 3 V V DS = V, I D = μ Static Drain-Source On-Resistance R DS(ON) 2 V = V, I D = mω 2 4 V = 4.V, I D = 2 Diode Forward Voltage V SD.7.2 V V = V, I S = 2.6 DYNMIC CHRCTERISTICS (Note ) Input Capacitance C ISS,43 pf V DS = 2V, V = V, Output Capacitance C OSS 68 pf f = MHz Reverse Transfer Capacitance C RSS 69 pf Gate Resistance R G 2. Ω V DS = V, V = V, f = MHz Total Gate Charge (V = V) Q G. nc Total Gate Charge (V = 6V) Q G 2 nc Gate-Source Charge Q 4.3 nc Gate-Drain Charge Q GD. nc Turn-On Delay Time t D(ON) 4.4 ns Turn-On Rise Time t R 6. ns Turn-Off Delay Time t D(OFF) 4.2 ns Turn-Off Fall Time t F.4 ns Body Diode Reverse Recovery Time t RR 2.2 ns Body Diode Reverse Recovery Charge Q RR.2 nc V DS = V, I D =, V DD = V, V = V, R G = 4.7Ω, I D = IF=, di/dt=/μs Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer -inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I S and E S rating are based on low frequency and duty cycles to keep T J = 2 C. Short duration pulse test used to minimize self-heating effect.. Guaranteed by design. Not subject to product testing. Document number: DS38 Rev. 2-2 2 of 7 June 6
R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) R DS(ON), DRIN-SOURCE ON-RESISTNCE (NORMLIZED) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) DVNCE INFORMTION DVNCED INFORMTION I D, DRIN CURRENT () I D, DRIN CURRENT () 2 V = V V = 8V V = 4.V 2 V =.V DS V = 4V V = 3.V T = 7 C T = C T = 2 C T = 8 C V = 3.V T = 2 C T = - C.. 2 2. 3 V DS, DRIN-SOURCE VOLTGE (V) Figure Typical Output Characteristic. 2 2. 3 3. 4 V, GTE-SOURCE VOLTGE (V) Figure 2 Typical Transfer Characteristics 4 2 3 V = 4.V 2 I = 2 D V = V 2 3 4 4 I, DRIN-SOURCE CURRENT () D Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 4 V = V 3 2 T = 7 C T = C T = 2 C T = 8 C T = 2 C T = - C 2 3 4 4 I D, DRIN CURRENT () Figure Typical On-Resistance vs. Drain Current and Temperature 2 4 6 8 2 4 6 8 V, GTE-SOURCE VOLTGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.4 2.2 2.8.6.4.2.8.6 V = V I = 2 D V = 4.V I = D.4 - -2 2 7 2 7 T J, JUNCTION TEMPERTURE ( C) Figure 6 On-Resistance Variation with Temperature Document number: DS38 Rev. 2-2 3 of 7 June 6
V GTE THRESHOLD VOLTGE (V) I D, DRIN CURRENT () I S, SOURCE CURRENT () C T, JUNCTION CPCITNCE (pf) DVNCE INFORMTION DVNCED INFORMTION R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) V (th), GTE THRESHOLD VOLTGE (V) 4 2.4 3 V = V I = 2 D 2.2 2 2.8 I = m D V = 4.V I = 2 D.6.4 I = µ D.2 - -2 2 7 2 7 T J, JUNCTION TEMPERTURE ( C) Figure 7 On-Resistance Variation with Temperature.8 - -2 2 7 2 7 T J, JUNCTION TEMPERTURE ( C) Figure 8 Gate Threshold Variation vs. mbient Temperature 43 f=mhz 36 C iss 29 22 T = 7 C T = C T = 2 C C oss T = 2 C T = 8 C T = - C C rss 8.3.6.9.2. V SD, SOURCE-DRIN VOLTGE (V) Figure 9 Diode Forward Voltage vs. Current 8 6 4 2 V = V DS I = D 2 4 6 8 2 4 6 8 Q, TOTL GTE CHRGE (nc) g Figure Gate Charge 2 3 4 4 6 V, DRIN-SOURCE VOLTGE (V) DS Figure Typical Junction Capacitance R DS(on) Limited T = 7 C J(m ax) T = 2 C C DC P = ms W P = ms W P = ms W P = µs W P = µs W V = V Single Pulse DUT on Infinite Heatsink.. V DS, DRIN-SOURCE VOLTGE (V) Figure 2 SO, Safe Operation rea Document number: DS38 Rev. 2-2 4 of 7 June 6
DVNCE INFORMTION DVNCED INFORMTION r(t), TRNSIENT THERML RESISTNCE D =.9 D =.7 D =. D =.3. D =. D =. D =.2. D =. D =. D = Single Pulse R JC (t) = r(t) * R R = 2.2 C/W JC Duty Cycle, D = t/ t2....... t, PULSE DURTION TIME (sec) Figure 3 Transient Thermal Resistance JC Document number: DS38 Rev. 2-2 of 7 June 6
DVNCE INFORMTION DVNCED INFORMTION Package Outline Dimensions Please see http:///package-outlines.html for the latest version. PowerDI6-8 (Type C) y L E2 La D D x E E Ø. Depth.7±. b(8x) e/2 b(8x) b2(2x) D3 k k L4 M L c (4x) e DETIL (4x) Seating Plane DETIL PowerDI6-8 (Type C) Dim Min Max Typ.9....2 b.33..4 b..366.333 b2..3.2 c.23.33.277 D. BSC D 4.8 4.9 4.9.4.6. D3 3.98 E 6. BSC E.7.8.8 E2 3.6 3.76 3.66 e.27bsc k.27 k.6 L..7.6 La..7.6 L...7 L4.2 M 3. 3.7 3.6 x.4 y.9 θ 2 θ 6 8 7 ll Dimensions in mm Suggested Pad Layout Please see http:///package-outlines.html for the latest version. PowerDI6-8 (Type C) Y3 Y2 8 X3 X X4 X2 Y G Y(4x) Dimensions Value (in mm) C.27 G.66 G.8 X.6 X 3.9 X2.6 X3.6 X4 4.4 Y.27 Y. Y2 3.8 Y3 6.6 X C G Document number: DS38 Rev. 2-2 6 of 7 June 6
DVNCE INFORMTION DVNCED INFORMTION IMPORTNT NOTICE DIODES INCORPORTED MKES NO WRRNTY OF NY KIND, EXPRESS OR IMPLIED, WITH REGRDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WRRNTIES OF MERCHNTBILITY ND FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 6, Diodes Incorporated Document number: DS38 Rev. 2-2 7 of 7 June 6