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MMT424 NPN SMLL SIGNL SURF MOUNT TRNSISTOR Features pitaxial Planar Die onstruction omplementary PNP Type vailable (MMT426) Ideal for Medium Power mplification and Switching Lead Free/RoHS ompliant (Note 2) SOT-23 Dim Min Max.37.5.2.4 2.3 2.5 Mechanical Data TOP VIW D G D.89.3.45.6 ase: SOT-23 ase Material: Molded Plastic. UL Flammability lassification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminal onnections: See Diagram Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over lloy 42 leadframe). Marking (See Page 2): K Ordering & Date ode Information: See Page 2 Weight:.8 grams (approximate) H J K L M G.78 2.5 H 2.8 3. J.3. K.93. L.45.6 M.85.8 8 ll Dimensions in mm Maximum Ratings @ T = 25 unless otherwise specified haracteristic Symbol MMT424 Unit ollector-ase Voltage V O 3 V ollector-mitter Voltage V O 25 V mitter-ase Voltage V O 5. V ollector urrent - ontinuous (Note ) I 2 m Power Dissipation (Note ) P d 3 mw Thermal Resistance, Junction to mbient (Note ) R J 47 /W Operating and Storage and Temperature Range T j, T STG -55 to +5 Notes:. Device mounted on FR-4 P, inch x.85 inch x.62 inch; pad layout as shown on Diodes Inc. suggested pad layout document P2, which can be found on our website at http:///datasheets/ap2.pdf. 2. No purposefully added lead. DS35 Rev. 9-2 of 4 MMT424 Diodes Incorporated
lectrical haracteristics @ T = 25 unless otherwise specified OFF HRTRISTIS (Note 3) haracteristic Symbol Min Max Unit Test ondition ollector-ase reakdown Voltage V (R)O 3 V I =, I = ollector-mitter reakdown Voltage V (R)O 25 V I =.m, I = mitter-ase reakdown Voltage V (R)O 5. 6. V I =, I = ollector utoff urrent I O 5 n V = 2V, I = V mitter utoff urrent I O 5 n V = 3.V, I = V ON HRTRISTIS (Note 3) D urrent Gain h F 2 6 36 I = 2.m, V =.V I = 5m, V =.V ollector-mitter Saturation Voltage V (ST).3 V I = 5m, I = 5.m ase-mitter Saturation Voltage V (ST).95 V I = 5m, I = 5.m SMLL SIGNL HRTRISTIS Output apacitance obo 4. pf V = 5.V, f =.MHz, I = Input apacitance ibo 8. pf V =.5V, f =.MHz, I = Small Signal urrent Gain h fe 2 48 urrent Gain-andwidth Product f T 3 MHz V =.V, I = 2.m, f =.khz V = 2V, I = m, f = MHz Ordering Information (Note 4) Device Packaging Shipping MMT424-7-F SOT-23 3/Tape & Reel Notes: 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http:///datasheets/ap27.pdf. Marking Information K YM K = Product Type Marking ode YM = Date ode Marking Y = Year ex: N = 22 M = Month ex: 9 = September Date ode Key Year 998 999 2 2 22 23 24 25 26 27 28 29 ode J K L M N P R S T U V W Month Jan Feb March pr May Jun Jul ug Sep Oct Nov Dec ode 2 3 4 5 6 7 8 9 O N D DS35 Rev. 9-2 2 of 4 MMT424
5 P D, POWR DISSIPTION (mw) 35 3 25 2 5 IO, INPUT PITN (pf) OO, OUTPUT PITN (pf) 5 ibo f = MHz 5 obo 25 5 75 25 5 75 2. T, MINT TMPRTUR ( ) Fig., Max Power Dissipation vs mbient Temperature V, OLLTOR-S VOLTG (V) Fig. 2, Input and Output apacitance vs. ollector-ase Voltage I I = h F, D URRNT GIN T = -25 T = 25 T = +25 V (ST), OLLTOR-MITTR (V) STURTION VOLTG.. I, OLLTOR URRNT (m) Fig. 3, Typical D urrent Gain vs ollector urrent V =.V.. I, OLLTOR URRNT (m) Fig. 4, Typical ollector-mitter Saturation Voltage vs. ollector urrent I I = V (ST), S-MITTR (V) STURTION VOLTG.. I, OLLTOR URRNT (m) Fig. 5, Typical ase-mitter Saturation Voltage vs. ollector urrent DS35 Rev. 9-2 3 of 4 MMT424
IMPORTNT NOTI Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIF SUPPORT The products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS35 Rev. 9-2 4 of 4 MMT424