7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo drive amplifier Uninterruptible power supply Maximum ratings and characteristics bsolute maximum ratings (Tc=25 C unless without specified) Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 12 ±2 IC Continuous Tc=25 C 75 Collector current Tc= C 5 ICP 1ms Tc=25 C 15 Tc= C 1 -IC 5 Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC 1 device Continuous Tc=25 C Tc= C 3 12 ±2 35 25 W ICP 1ms Tc=25 C 7 Tc= C 5 Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage PC RRM RRM 1 device 1 12 1 W verage output current Surge current (Non-Repetitive) IO IFSM 5Hz/Hz sine wave Tj=15 C, 1ms 5 52 I 2 t (Non-Repetitive) I 2 t half sine wave 1352 2 s Operating junction temperature Tj +15 C Storage temperature Tstg - to +125 C Isolation between and copper base *2 is : 1 minute C 25 voltage between thermistor and others *3 C 25 Mounting screw torque 3.5 *1 N m *1 Recommendable value : 2.5 to 3.5 N m (M5) *2 ll s should be connected together when isolation test will be done. *3 Terminal and 9 should be connected together. Terminal 1 to 7 and 1 to 2 should be connected together and shorted to copper base. Converter Brake Inverter
7MBR5SB12 Elecical characteristics (Tj=25 C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES GE(th) CE(sat) CE=12, GE= CE=, GE=±2 CE=2, IC=5m GE=15, Ic=5 chip 5.5 7.2 2.1 2.3 1..2.5 2.7 m µ Input capacitance Turn-on time Cies GE=, CE=1, f=1mhz CC= IC=5.35.25 1.2. pf µs (i) GE=±15.1 Turn-off RG=2Ω.5 1...3 Forward on voltage F IF=5 chip 2.3 2.5 3.3 Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF=5 CES=12, GE= CE=, GE=±2.35 1..2 µs m µ Collector-Emitter saturation voltage CE(sat) IC=25, GE=15 chip 2.1 2.25 2.7 Turn-on time CC= IC=25.35.25 1.2. µs Turn-off time GE=±15 RG=51Ω.5. 1..3 Reverse current IRRM R=12 1. m Forward on voltage FM IF=5 chip 1.1 1.2 1.5 Reverse current IRRM R=1 1. m Resistance R T=25 C 5 Ω T=1 C 5 95 52 B value B T=25/5 C 335 3375 35 K Thermistor Converter Brake Inverter Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT.35 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD.75 Brake IGBT.9 C/W Converter Diode.5 Contact thermal resistance * Rth(c-f) With thermal compound.5 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Therm istor] 9 2(Gu) 1(Gv) 1(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 15(Ew) 7(B) (U) 5() (W) 1(Gb) 13(Gx) 12(Gy) 11(Gz) 1(En) 23(N) 2(N1)
Characteristics (Representative) 7MBR5SB12 12 Tj= 25 (typ.) 12 Tj= 125 (typ.) 1 GE= 2 15 12 1 GE= 2 15 12 1 1 2 1 2 3 5 2 1 2 3 5 12 GE=15 (typ.) 1 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 (typ.) 1 Tj= 25 Tj= 125 2 2 Ic= 1 Ic= 5 Ic= 25 1 2 3 5 5 1 15 2 25 Gate - Emitter voltage : GE [ ] 2 Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= 25 1 Dynamic Gate charge (typ.) cc=, Ic=5, Tj= 25 25 1 2 Capacitance : Cies, Coes, Cres [ pf ] 1 Cies Coes Cres 2 15 1 5 Gate - Emitter voltage : GE [ ] 1 5 1 15 2 25 3 35 1 2 3 5 Gate charge : Qg [ nc ]
7MBR5SB12 1 Switching time vs. Collector current (typ.) cc=, GE=±15, Rg=2Ω, Tj=25 C 1 Switching time vs. Collector current (typ.) cc=, GE=±15, Rg=2Ω, Tj=125 C Switching time :,,, [ nsec ] 5 1 Switching time :,,, [ nsec ] 5 1 5 2 5 2 5 Switching time vs. Gate resistance (typ.) cc=, Ic=5, GE=±15, Tj=25 C 1 Switching loss vs. Collector current (typ.) cc=, GE=±15, Rg=2Ω 12 Eon(125 ) Switching time :,,, [ nsec ] 1 5 Switching loss : Eon, Eoff, Err [ mj/pulse ] 1 Eon(25 ) Eoff(125 ) Eoff(25 ) Err(125 ) 1 2 Err(25 ) 5 1 5 1 5 Gate resistance : Rg [ Ω ] 2 1 Switching loss vs. Gate resistance (typ.) cc=, Ic=5, GE=±15, Tj=125 C 12 Reverse bias safe operating area +GE=15, -GE<15, Rg>2Ω, Tj<125 C = = = Eon 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] 3 2 1 Eoff 2 Err 1 5 1 5 Gate resistance : Rg [ Ω ] 2 1 12 1
7MBR5SB12 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) 12 3 cc=, GE=±15, Rg=2Ω 1 Tj=125 Tj=25 r(125 ) Forward current : IF [ ] Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r(25 ) Irr(125 ) Irr(25 ) 2 1 2 3 Forward on voltage : F [ ] 1 2 Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) 12 1 Tj= 25 Tj= 125 Forward current : IF [ ] 2... 1.2 1. 2. Forward on voltage : FM [ ] Transient thermal resistance [ Thermistor ] Temperature characteristic (typ.) 3 2 1 1 FWD[Inverter] Thermal resistanse : Rth(j-c) [ /W ].1 IGBT[Brake] Conv. Diode IGBT[Inverter] Resistance : R [ k Ω ] 1 1.1.1.1.1 1.1 - - -2 2 1 12 1 1 1 Pulse width : Pw [ sec ] Temperature [ ]
7MBR5SB12 Tj= 25 (typ.) Tj= 125 (typ.) 5 GE= 2 15 12 5 GE= 2 15 12 3 2 1 3 2 1 1 1 2 3 5 1 1 2 3 5 GE=15 (typ.) 1 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 (typ.) 5 Tj= 25 Tj= 125 3 2 1 2 Ic= 5 Ic= 25 Ic= 12.5 1 2 3 5 5 1 15 2 25 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) 1 GE=, f= 1MHz, Tj= 25 1 cc=, Ic=25, Tj= 25 25 2 Capacitance : Cies, Coes, Cres [ pf ] 1 Cies Coes 2 15 1 5 Gate - Emitter voltage : GE [ ] Cres 1 5 1 15 2 25 3 35 5 1 15 2 25 Gate charge : Qg [ nc ]
7MBR5SB12 Outline Drawings, mm M712 -R2.25 ±.3 -ø5.5 ±.3 122 ±1 11 ±.3 9.5 ±.3 13.9 15.2 19.5 19.5 15.2 3.1 =15.2 11.5 +.5 19.97 21 2 19 1 17 1 15 1 1 3.1 11.5 +.5 99. ±.3 9 2 ±1 5 ±.3 11.3 11.3.19 11.5 3.1.55 2 23 22 3.1 39.9 ±.3 15.75 15.2 3.1 1 2 3 5 1.995 15.2 15.2 15.2 15.2 15.2 22. 7 57.5 ±.3 1.15 ±.2 ø.. ±.2 ø2.5 ±.1 1.5 ±.3 ±.3 ø2.1 ±.1 2.5 ±1 17 ±1 3.5 ±.5 2.9 ±.3 1.1 ±.3.5 ±.5 1 ±.2 Section - Shows theory dimensions