Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 2 (A) DESCRIPTION/FEATURES The 70TPS..PbF High oltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications. Available RoHS* COMPLIANT Super-247 1 (K) (G) 3 PRODUCT SUMMARY T at A < 1.4 I TSM 1400 A RRM 0/1600 Typical applications are in input rectification (soft start) or AC-switches or high current crow-bar as well as others phase-control circuits. These products are designed to be used with ishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ( PbF suffix). MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS ALUES UNITS I T(A) Sinusoidal waveform 70 A I RMS Lead current limitation 75 RRM / DRM Range 0/1600 I TSM 1400 A T A, T J = 25 C 1.4 d/dt 500 /µs di/dt 150 A/µs T J - 40 to 125 C OLTAGE RATINGS PART NUMBER RRM / DRM, MAXIMUM REPETITIE PEAK AND OFF-STATE OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE I RRM /I DRM AT 125 C ma 70TPS12PbF 0 1300 70TPS16PbF 1600 1700 15 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94391 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 06-Jun-08 1
70TPS..PbF High oltage Series ishay High Power Products Phase Control SCR, 70 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum average on-state current I T(A) T C = 82 C, 180 conduction half sine wave 70 Maximum continuous RMS on-state I T(RMS) Lead current limitation 75 current as AC switch A Maximum peak, one-cycle 10 ms sine pulse, rated RRM applied 0 I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1400 Maximum I 2 t for fusing I 2 t 10 ms sine pulse, rated RRM applied Initial T J = T J maximum 7200 10 ms sine pulse, no voltage reapplied 10 200 A 2 s Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied 102 000 A 2 s Low level value of threshold voltage T(TO)1 0.916 High level value of threshold voltage T(TO)2 1.21 T J = 125 C Low level value of on-state slope resistance r t1 4.138 mω High level value of on-state slope resistance r t2 3.43 Maximum peak on-state voltage TM A, T J = 25 C 1.4 Maximum rate of rise of turned-on current di/dt T J = 25 C 150 A/µs Maximum holding current I H 200 T J = 25 C Maximum latching current I L 400 T J = 25 C 1.0 Maximum reverse and direct leakage current I RRM /I DRM T J = 125 C R = Rated RRM / DRM 15 ma Maximum rate of rise of off-state voltage d/dt T J = 125 C 500 /µs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak gate power P GM 10 T = 30 µs Maximum average gate power P G(A) 2.5 W Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - GM 10 Maximum required DC gate voltage to trigger GT T J = 25 C Anode supply = 6 resistive load 1.5 T J = - 40 C 4.0 T J = 125 C 1.1 Maximum required DC gate current to trigger I GT T J = 25 C ma T J = - 40 C 270 T J = 125 C 80 Maximum DC gate voltage not to trigger GD T J = C, DRM = Rated value 0.25 Maximum DC gate current not to trigger I GD 6 ma www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94391 2 Revision: 06-Jun-08
Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum junction temperature range T J - 40 to 125 C Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, R thjc DC operation 0.27 junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight R thja 40 R thcs Mounting surface, smooth and greased 0.2 C/W 6 g 0.21 oz. Mounting torque Marking device minimum 6 (5) kgf cm maximum 12 (10) (lbf in) Case style Super-247 70TPS12 70TPS16 ΔR thj-hs CONDUCTION PER JUNCTION SINE HALF WAE CONDUCTION RECTANGULAR WAE CONDUCTION DEICE UNITS 180 90 60 30 180 90 60 30 70TPS 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 C/W Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC Document Number: 94391 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 06-Jun-08 3
70TPS..PbF High oltage Series ishay High Power Products Phase Control SCR, 70 A Maximum Allowable Case Temperature ( C) 130 110 90 80 RthJC (DC) = 0.27 C/W Conduction Angle 70 0 10 20 30 40 50 60 70 80 Fig. 1 - Current Rating Characteristics Maximum Average On-state Power Loss (W) 150 90 60 RMS Limit DC 30 Conduction Period Tj = 125 C 0 0 15 30 45 60 75 Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) 130 110 90 80 70 RthJC (DC) = 0.27 C/W DC Conduction Period 60 0 10 20 30 40 50 60 70 80 90 Fig. 2 - Current Rating Characteristics Peak Half Sine Wave On-state Current (A) 1300 0 1 0 900 800 700 600 At Any Rated Load Condition And With Rated rrm Applied Following Surge. Initial Tj = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 500 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 140 80 60 40 RMS Limit Conduction Angle 20 Tj = 125 C 0 0 10 20 30 40 50 60 70 Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 1500 Maximum Non Repetitive Surge Current 1400 ersus Pulse Train Duration. Control 1300 Of Conduction May Not Be Maintained. Initial Tj = 125 C 0 No oltage Reapplied 1 Rated rrm Reapplied 0 900 800 700 600 500 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94391 4 Revision: 06-Jun-08
Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 0 Instantaneous On-state Current (A) Tj = 125 C 10 Tj = 25 C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state oltage (A) Fig. 7 - On-State oltage Drop Characteristics Instantaneous Gate oltage () 10 1 Rectangular gate pulse a)recommended load line for rated di/dt: 20, 30 ohms tr = 0.5 µs, tp >= 6 µs b)recommended load line for <= 30% rated di/dt: 20, 65 ohms tr = 1 µs, tp >= 6 µs TJ = 125 C TJ = 25 C (a) (b) TJ = -40 C GD IGD 0.1 Frequency Limited by PG(A) 0.001 0.01 0.1 1 10 0 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics (1) PGM = W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (4) (3) (2) (1) Transient Thermal Impedance Z thjc ( C/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse Steady State alue (DC Operation) 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance Z thjc Characteristics Document Number: 94391 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 06-Jun-08 5
70TPS..PbF High oltage Series ishay High Power Products Phase Control SCR, 70 A ORDERING INFORMATION TABLE Device code 70 T P S 16 PbF 1 2 3 4 5 6 1 - Current rating (70 = 70 A) 2 - Circuit configuration: T = Thyristor 3 - Package: 4 - P = Super-247 Type of silicon: S = Standard recovery rectifier 5 - oltage code x = RRM 6 - None = Standard production PbF = Lead (Pb)-free 12 = 0 16 = 1600 Dimensions Part marking information LINKS TO RELATED DOCUMENTS http://www.vishay.com/doc?95073 http://www.vishay.com/doc?95070 www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94391 6 Revision: 06-Jun-08
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