2N72 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Complementary N- and P-Channel devices Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex 2N72 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option BV DSS /BV DGS (V) R DS(ON) (max) (Ω) I D(ON) (min) (A) 2N72-G TO-236AB (SOT-23) 6 7.5.5 -G indicates package is RoHS compliant ( Green ) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Value BV DSS BV DGS Gate-to-source voltage ±3V Operating and storage temperature Soldering temperature* -55 C to +15 C +3 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of mm from case for 1 seconds. Pin Configuration Product Marking 72W DRAIN GATE SOURCE TO-236AB (SOT-23) W = Code for week sealed = Green Packaging TO-236AB (SOT-23) 1235 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48-222-8888 www.supertex.com
Thermal Characteristics Package Electrical Characteristics (T A = 25 C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 6 - - V = V, I D = 1µA (th) Gate threshold voltage 1. - 2.5 V = V DS, I D = 25µA (th) Change in (th) with temperature - - -5.5 mv/ O C = V DS, I D = 25µA I GSS Gate body leakage current - - ±1 na = ±2V, V DS = V I DSS Zero gate voltage drain current - - 1. - - 5 µa 2N72 = V, V DS = Max rating = V, V DS =.8Max rating, T A = 125 O C I D(ON) On-state drain current 5 - - ma = 1V, V DS = 25V R DS(ON) Static drain-to-source on-state resistance - - 7.5 = 5.V, I D = 5mA Ω - - 7.5 = 1V, I D = 5mA R DS(ON) Change in R DS(ON) with temperature - - 1. %/ O C = 1V, I D = 5mA G FS Forward transconductance 8 - - mmho V DS = 25V, I D = 5mA C ISS Input capacitance - - 5 C OSS Common source output capacitance - - 25 C RSS Reverse transfer capacitance - - 5. t (ON) Turn-on time - - 2 t (OFF) Turn-off time - - 2 Notes: 1. 2. I D (continuous) I D (pulsed) Power Dissipation @T A = 25 O C (W) θ jc ( O C/W) pf ns θ ja ( O C/W) TO-236AB 115 8.36 2 35 115 8 Notes: I D (continuous) is limited by max rated T j. = V, V DS = 25V, f = 1.MHz V DD = 3V, I D = 2mA, R GEN = 25Ω V SD Diode forward voltage drop - - V = V, I SD = 2mA t rr Reverse recovery time - 4 - ns = V, I SD = 8mA All D.C. parameters 1% tested at 25 O C unless otherwise stated. (Pulse test: 3µs pulse, 2% duty cycle.) All A.C. parameters sample tested. I DR I DRM Switching Waveforms and Test Circuit V DD INPUT 1V V 1% 9% PULSE GENERATOR R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t F OUTPUT V DD 1% 1% INPUT D.U.T. V 9% 9% 1235 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48-222-8888 www.supertex.com 2
2N72 Typical Performance Curves 2. Output Characteristics 2. Saturation Characteristics = 1V = 1V.8.4 1 2 3 4 5 9V 8V 7V 6V 5V 4V 3V.8.4 2 4 6 8 1 9V 8V 7V 6V 5V 4V 3V.5 Transconductance vs. Drain Current.5 Power Dissipation vs. Temperature.4 V DS = 25V.4 G F S (siemens ).3.2 T A = -55 O C 25 O C 125 O C P D (watts ).3.2 SOT-23.1.1.2.4 I D (amperes).6.8 1. 25 5 75 1 125 15 T A ( O C) Maximum Rated Safe Operating Area Thermal Response Characteristics 1. SOT-23 (pulsed) 1..1.1 SOT-23 (DC) Resistance (normalized).8.6.4.1 T A = 25 O C.1 1 1 1 Thermal.2 SOT-23 T A = 25 O C P D =.36W.1.1.1 1. 1 t p (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48-222-8888 www.supertex.com 3
2N72 Typical Performance Curves (cont.) 1.1 BV DSS Variation with Temperature 1 On-Resistance vs. Drain Current 8 = 5V B V D S S (normalized ) 1. R D S(ON ) (ohms ) 6 4 = 1V 2.9-5 5 1 15 T j ( O C).5 1. 1.5 2. 2.5 I D (amperes) 2. Transfer Characteristics (th) and R DS(ON) Variation with Temperature 2..8.4 V DS = 25V T A = -55 O C 125 O C 25 O C V G S(th ) (normalized ) 1.4 1..8 R DS(ON) @ 1V,.5A (th) @ 1mA.8.4 R DS(ON) (normalized ).6 2 4 6 8 1 (volts) -5 5 1 15 T j ( O C) 5 Capacitance vs. Drain-to-Source Voltage 1 Gate Drive Dynamic Characteristics f = 1MHz 8 V DS = 1V C (picofarads) 25 C ISS V G S (volts ) 6 4 9 pf C OSS C RSS 1 2 3 4 2 3 pf V DS = 4V.2.4.6.8 1. Q G (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48-222-8888 www.supertex.com 4
2N72 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.9x1.3mm body, 1.12mm height (max), 1.9mm pitch Top View View B View B Side View View A - A Dimension (mm) Symbol A A1 A2 b D E E1 e e1 L L1 θ MIN.89.1.88.3 2.8 2.1.2 O.95 1.9.54 NOM - -.95-2.9-1.3.5 - BSC BSC REF MAX 1.12.1.5 3.4 2.64 1.4.6 8 O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B7228. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. 28 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-2N72 B918 5 1235 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48-222-8888 www.supertex.com
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