WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 0.93 Ω (Typ.) @ = 100% Avalanche Tested 1 3 1.Gate. Drain 3. Source Absolute Maximum Ratings T C =5 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 900 V Drain Current Continuous (T C = 5 ) 11.0 A Drain Current Continuous (T C = 100 ) 6.9 A M Drain Current Pulsed (Note 1) 44.0 A Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note ) 960 mj I AR Avalanche Current (Note 1) 11.0 A E AR Repetitive Avalanche Energy (Note 1) 30 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P D Power Dissipation (T C = 5 ) 300 W - Derate above 5.38 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 0.4 R θcs Case-to-Sink 0.4 -- /W R θja Junction-to-Ambient -- 40 1/7
Electrical Characteristics T C =5 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 50 μa.5 -- 4.5 V R DS(ON) Static Drain-Source On-Resistance Off Characteristics = 10 V, = 5.5 A -- 0.93 1.15 Ω BS Drain-Source Breakdown Voltage = 0 V, = 50 μa 900 -- -- V ΔBS /ΔT J SS I GSSF I GSSR C iss Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics = 50 μa, Referenced to5 -- 1.0 -- V/ = 900 V, = 0 V -- -- 1 μa = 70 V, T C = 15 -- -- 10 μa = 30 V, = 0 V -- -- 100 na = -30 V, = 0 V -- -- -100 na Input Capacitance -- 3050 4000 pf = 5 V, = 0 V, C oss Output Capacitance -- 60 340 pf f = 1.0 MHz C rss Reverse Transfer Capacitance -- 8 36 pf Switching Characteristics t d(on) Turn-On Time = 450 V, = 11.0 A, -- 70 140 ns t r Turn-On Rise Time R G = 5 Ω -- 155 310 ns t d(off) Turn-Off Delay Time -- 155 310 ns t f Turn-Off Fall Time (Note 4,5) -- 100 00 ns Q g Total Gate Charge = 70V, = 11.0 A, -- 75 100 nc Q gs Gate-Source Charge = 10 V -- 16 -- nc Q gd Gate-Drain Charge (Note 4,5) -- 3 -- nc Source-Drain Diode Maximum Ratings and Characteristics N-Channel MOSFET I S Continuous Source-Drain Diode Forward Current -- -- 11.0 I SM Pulsed Source-Drain Diode Forward Current -- -- 44 A V SD Source-Drain Diode Forward Voltage I S = 11.0 A, = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 11.0 A, = 0 V -- 100 -- ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs (Note 4) -- 0.0 -- μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature. L=15mH, I AS =11.0A, =50V, R G =5Ω, Starting T J =5 C 3. I SD 11.0A, di/dt 00A/μs, BS, Starting T J =5 C 4. Pulse Test : Pulse Width 300μs, Duty Cycle % 5. Essentially Independent of Operating Temperature /7
Typical Characteristics 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 1, Drain-Source Voltage [V] 1. 50μ s Pulse Test. T C = 5 10 1 150 o C 5 o C -55 o C 1. = 50V. 50μ s Pulse Test 4 6 8 10, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure. Transfer Characteristics.5 R DS(ON) [Ω ], Drain-Source On-Resistance.0 1.5 1.0 = 0V = Note : T J = 5 R, Reverse Drain Current [A] 10 1 150 5 1. = 0V. 50μ s Pulse Test 0.5 0 5 10 15 0 5 30 0. 0.4 0.6 0.8 1.0 1. 1.4 V SD, Source-Drain voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] 5000 4500 4000 3500 3000 500 000 1500 1000 500 C iss C oss C rss 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V. f = 1 MHz, Gate-Source Voltage [V] 1 10 8 6 4 = 180V = 450V = 70V Note : = 11A 0 0 30 40 50 60 70 80 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3/7
Typical Characteristics (continued) 1. 3.0 BS, (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 0.9 1. = 0 V. = 50 μ A R DS(ON), (Normalized) Drain-Source On-Resistance.5.0 1.5 1.0 0.5 1. = 10 V. = 5.5 A 0.8-100 -50 0 50 100 150 00 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 00 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 1 10 10 1 10 - Operation in This Area is Limited by R DS(on) 1. T C = 5 o C. T J = 150 o C 3. Single Pulse 10 µs 100 µs 1 ms 10 ms DC 10 1 10 10 3, Drain-Source Voltage [V] 10 8 6 4 0 5 50 75 100 15 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z θ JC (t), Thermal Response 0. 1. Z θ JC (t) = 0.4 /WMa x.. Duty Factor, D=t 1 /t 3. T JM - T C = P DM * Z θ JC (t) 0.1 10-0.05 0.0 0.01 single pulse P DM t 1 t 10-5 10-4 10-3 10-10 1 t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 4/7
Fig 1. Gate Charge Test Circuit & Waveform 1V 00nF 50KΩ 300nF Same Type as Q g Q gs Q gd 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 L L I AS BS -------------------- BS -- BS I AS R G (t) (t) t p Time 5/7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop 6/7
Package Dimension TO-3P 15.6±0.0 13.6±0.0 9.6±0.0 φ3.±0.0 4.8±0.0 1.5±0.0 13.9±0.0 14.9±0.0 19.9±0.0 18.7±0.0 1.4±0.0 3±0.0 ±0.0 1±0.0 16.5±0.0 3.5±0.0 5.45typ 0.6±0.0 5.45typ 7/7