ESD (Electrostatic discharge) sensitive device, observe handling precaution!

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NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF770A LSs 1 = B 2 = E = C SOT2 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 12 V Collectoremitter voltage V CES 20 Collectorbase voltage V CBO 20 Emitterbase voltage V EBO 2 Collector current I C 90 ma Base current I B 9 Total power dissipation 2) T S 6 C P tot 00 mw Junction temperature T j 150 C Ambient temperature T A 65... 150 Storage temperature T stg 65... 150 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 290 K/W 1 Pbcontaining package may be available upon special request 2 T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note Thermal Resistance 1 20070420

Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 12 V I C = 1 ma, I B = 0 Collectoremitter cutoff current I CES 100 µa V CE = 20 V, V BE = 0 Collectorbase cutoff current I CBO 100 na V CB = 10 V, I E = 0 Emitterbase cutoff current I EBO 10 µa V EB = 2 V, I C = 0 DC current gain I C = 0 ma, V CE = 8 V, pulse measured h FE 70 100 140 2 20070420

Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 4.5 6 GHz I C = 0 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = 10 V, f = 1 MHz, V BE = 0, emitter grounded C cb 0.54 0.75 pf Collector emitter capacitance V CE = 10 V, f = 1 MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = 1 MHz, V CB = 0, collector grounded Noise figure I C = 5 ma, V CE = 8 V, Z S = Z Sopt, C ce 0.25 C eb 1.9 F 1.5 2.6 db Power gain, maximum available 1) G ma I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, 14.5 9.5 Transducer gain S 21e 2 db I C = 0 ma, V CE = 8 V, Z S = Z L = 50Ω, 12.5 7 1 G ma = S 21 /S 12 (k(k 2 1) 1/2 ) 20070420

Package SOT2 BF770A Package Outline +0.1 1) 0.4 0.05 2.9 ±0.1 1.9 1 2 B C 0.95 2.4 ±0.15 0.15 MIN. 10 MAX. 1±0.1 0.1 MAX. 0...8 10 MAX. 0.08...0.15 1. ±0.1 A 0.25 M BC 0.2 M A Foot Print 1) Lead width can be 0.6 max. in dambar area 0.8 0.8 1.2 0.9 1. 0.9 Marking Layout (Example) EH s Manufacturer 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm =.000 Pieces/Reel Reel ø0 mm = 10.000 Pieces/Reel 4 0.9 0.2 8 2.1 2.65 Pin 1.15 1.15 4 20070420

Edition 20060201 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 20070420