IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IKQ1N6TA 6Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl
IKQ1N6TA TRENCHSTOP TM series LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C AutomotiveAECQ11qualified DesignedforDC/ACconvertersforAutomotiveApplication VerylowVCE(sat)1.5V(typ.) Maximumjunctiontemperature175 C Shortcircuitwithstandtime5µs 1%shortcircuittested 1%ofthepartsaredynamicallytested TRENCHSTOP TM andfieldstoptechnologyfor6v applicatiooffers: verytightparameterdistribution highruggedness,temperaturestablebehavior veryhighswitchingspeed PositivetemperaturecoefficientinVCE(sat) LowEMI LowgatechargeQG Greenpackage Verysoft,fastrecoveryantiparallelEmitterControlledHEdiode G E Applicatio: Maininverter AirConcompressor PTCheater Motordrives KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj= C Tvjmax Marking Package IKQ1N6TA 6V 1A 1.5V 175 C K1T6A PGTO73 Rev..,1111
IKQ1N6TA TRENCHSTOP TM series TableofContents Description........................................................................ Table of Contents................................................................... 3 Maximum Ratings................................................................... Thermal Resistance................................................................. Electrical Characteristics.............................................................. 5 Electrical Characteristics Diagrams..................................................... 8 Package Drawing...................................................................15 Testing Conditio..................................................................16 Revision History....................................................................17 Disclaimer.........................................................................17 3 Rev..,1111
IKQ1N6TA TRENCHSTOP TM series MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditiothatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC= Cvaluelimitedbybondwire TC=135 C IC 16. 1. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 8. A Turn off safe operating area VCE 6V,Tvj 175 C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax TC= Cvaluelimitedbybondwire TC=1 C 8. A IF 16. 1. Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 8. A Gateemitter voltage VGE ± V Short circuit withstand time VGE=15.V,VCC V Allowed number of short circuits < 1 Time between short circuits: 1.s Tvj=15 C PowerdissipationTC= C Ptot 833. W Operating junction temperature Tvj...+175 C Storage temperature Tstg 55...+15 C Soldering temperature, 1) wave soldering 1.6mm (.63in.) from case for 1s 6 Mounting torque, M3 screw Maximum of mounting processes: 3 tsc 5 A A µs C M.6 Nm ThermalResistance Parameter Symbol Conditio Max.Value Unit Characteristic IGBT thermal resistance, ) junction case Diode thermal resistance, ) junction case Thermal resistance junction ambient Rth(jc).18 K/W Rth(jc).3 K/W Rth(ja) K/W 1) Package not recommended for surface mount application ) Thermal resistance of thermal grease Rth(cs) (case to heat sink) of more than.1k/w not included. Rev..,1111
IKQ1N6TA TRENCHSTOP TM series ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditio Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=15.V,IC=1.A Tvj= C Tvj=175 C VGE=V,IF=1.A Tvj= C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=1.9mA,VCE=VGE.1.9 5.7 V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj= C Tvj=175 C 1.5 1.9 1.65 1.6 3. Gateemitter leakage current IGES VCE=V,VGE=V 1 na Traconductance gfs VCE=V,IC=1.A 75. S Integrated gate resistor rg none Ω..5. V V µa ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditio Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 753 Output capacitance Coes VCE=V,VGE=V,f=1MHz 6 Reverse trafer capacitance Cres 6 Gate charge Internal emitter inductance measured 5mm (.197 in.) from case Short circuit collector current Max. 1 short circuits Time between short circuits: 1.s QG VCC=8V,IC=1.A, VGE=15V pf 77. nc LE 13. nh IC(SC) VGE=15.V,VCC V, tsc 5µs Tvj=15 C 86 A 5 Rev..,1111
IKQ1N6TA Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max. 33 3 31 33.1 mj.8 mj 6.9 mj 8 3.5 µc. A 5 A/µs IGBT Characteristic, at Tvj = C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = C, VCC = V, IC = 1.A, VGE =./15.V, RG(on) = 3.Ω, RG(off) = 3.Ω, Lσ = 63nH, Cσ = 31pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. Diode Characteristic, at Tvj = C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = C, VR = V, IF = 1.A, dif/dt = 11A/µs dirr/dt Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max. 33 51 355 3 6.7 mj.1 mj 1.8 mj 1 1.8 µc 5. A 5 A/µs IGBT Characteristic, at Tvj = 175 C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = 175 C, VCC = V, IC = 1.A, VGE =./15.V, RG(on) = 3.Ω, RG(off) = 3.Ω, Lσ = 63nH, Cσ = 31pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. Diode Characteristic, at Tvj = 175 C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = 175 C, VR = V, IF = 1.A, dif/dt = 1A/µs dirr/dt 6 Rev.., 1111
IKQ1N6TA 9 8 7 Ptot, POWER DISSIPATION [W] IC, COLLECTOR CURRENT [A] 1 1 not for linear use 1 6 5 3 1.1 1 1 1 1 5 VCE, COLLECTOREMITTER VOLTAGE [V] 75 1 1 15 175 TC, CASE TEMPERATURE [ C] Figure 1. Safe operating area (D=, TC= C, Tj 175 C, VGE=/15V, tp=1µs. Proven by production test.) Figure. Power dissipation as a function of case temperature (Tj 175 C) 18 36 VGE=V 16 3 1 8 15V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 13V 1 1 8 6 11V 8V 5 75 1 1 15 175 TC, CASE TEMPERATURE [ C] 6V 1 8 7V 16 9V..5 1. 1.5..5 3. 3.5. VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Collector current as a function of case temperature (VGE 15V, Tj 175 C) Figure. Typical output characteristic (Tj= C) 7 Rev.., 1111
IKQ1N6TA 36 36 VGE=V 3 Tj= C Tj=175 C 3 15V 13V 8 11V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 8 9V 8V 7V 6V 16 1 16 1 8 8..5 1. 1.5..5 3. 3.5. VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical output characteristic (Tj=175 C) 6 8 1 1 1 Figure 6. Typical trafer characteristic (VCE=V) 3. 1 IC=38A IC=75A IC=1A IC=15A.5 t, SWITCHING TIMES [] VCE(sat), COLLECTOREMITTER SATURATION [A] VGE, GATEEMITTER VOLTAGE [V]. 1.5 1. td(off) tf td(on) tr 1.5. 5 75 1 1 15 1 175 Tj, JUNCTION TEMPERATURE [ C] 5 75 1 1 15 175 IC, COLLECTOR CURRENT [A] Figure 7. Typical collectoremitter saturation voltage as Figure 8. Typical switching times as a function of a function of junction temperature collector current (VGE=15V) (inductive load, Tj=175 C, VCE=V, VGE=15/V, rg=3ω,dynamic test circuit in Figure E) 8 Rev.., 1111
IKQ1N6TA 1E+ 1 td(off) tf td(on) tr t, SWITCHING TIMES [] t, SWITCHING TIMES [] td(off) tf td(on) tr 1 1 1 5 1 15 1 1 rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of gate resistor (inductive load, Tj=175 C, VCE=V, VGE=15/V, IC=1A,Dynamic test circuit in Figure E) 75 1 1 15 175 Figure 1. Typical switching times as a function of junction temperature (inductive load, VCE=V, VGE=15/V, IC=1A, rg=3ω,dynamic test circuit in Figure E) 8 3 typ. min. max. 7 Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] 5 Tj, JUNCTION TEMPERATURE [ C] 6 5 3 15 1 5 1 5 75 1 1 15 Tj, JUNCTION TEMPERATURE [ C] 8 1 16 IC, COLLECTOR CURRENT [A] Figure 11. Gateemitter threshold voltage as a function of junction temperature (IC=1,9mA) 9 Figure 1. Typical switching energy losses as a function of collector current (inductive load, Tj=175 C, VCE=V, VGE=15/V, rg=3ω,dynamic test circuit in Figure E) Rev.., 1111
IKQ1N6TA 16 Eoff Eon Ets 1 E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 35 3 15 1 5 Eoff Eon Ets 1 1 8 6 5 1 15 rg, GATE RESISTOR [Ω] Figure 13. Typical switching energy losses as a function of gate resistor (inductive load, Tj=175 C, VCE=V, VGE=15/V, IC=1A,Dynamic test circuit in Figure E) 1 15 175 1V 8V 1 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [mj] 1 16 Eoff Eon Ets 1 1 8 6 75 Figure 1. Typical switching energy losses as a function of junction temperature (inductive load, VCE=V, VGE=15/V, IC=1A, rg=3ω,dynamic test circuit in Figure E) 16 1 5 Tj, JUNCTION TEMPERATURE [ C] 1 1 8 6 3 5 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 15. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tj=175 C, VGE=15/V, IC=1A, RG=3Ω, Dynamic test circuit in Figure E) 1 3 5 6 7 8 QGE, GATE CHARGE [nc] Figure 16. Typical gate charge (IC=1A) 1 Rev.., 1111
IKQ1N6TA 16 IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] Cies Coes Cres C, CAPACITANCE [pf] 1E+ 1 1 1 5 1 15 1 1 1 8 6 3 1 VCE, COLLECTOREMITTER VOLTAGE [V] 1 16 18 VGE, GATEEMITTER VOLTAGE [V] Figure 17. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=1mhz) Figure 18. Typical short circuit collector current as a function of gateemitter voltage (VCE V, start at Tj 15 C) ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] tsc, SHORT CIRCUIT WITHSTAND TIME [µs] 1 1 8 6.1 D=.5..1.5..1 single pulse.1 i: 1 3 ri[k/w]:.87591.33988.5655137.778966 τi[s]: 3.E.6E3.3973.8563 1 11 1 13 1.1 1E6 15 VGE, GATEEMITTER VOLTAGE [V] 1E5 1E.1.1.1 1 tp, PULSE WIDTH [s] Figure 19. Short circuit withstand time as a function of gateemitter voltage (VCE=V, start at Tj= C, Tjmax 15 C) 11 Figure. IGBT traient thermal impedance as a function of pulse width for different duty cycles D (D=tp/T) Rev.., 1111
IKQ1N6TA 8 7 trr, REVERSE RECOVERY TIME [] ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] Tj= C, IF = 1A Tj=175 C, IF = 1A.1 D=.5..1.5..1 single pulse.1 6 5 3 1 i: 1 3 ri[k/w]:.576519.8837.1653593 τi[s]: 6.7E 9.E3.1178987.1 1E6 1E5 1E.1.1.1 5 1 tp, PULSE WIDTH [s] 7 9 11 13 15 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 1. Diode traient thermal impedance as a function of pulse width for different duty cycles D (D=tp/T) Figure. Typical reverse recovery time as a function of diode current slope (VR=V,Dynamic test circuit in Figure E) 1 7 6 1 Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] Tj= C, IF = 1A Tj=175 C, IF = 1A Tj= C, IF = 1A Tj=175 C, IF = 1A 8 6 5 5 3 1 7 9 11 13 15 dif/dt, DIODE CURRENT SLOPE [A/µs] 5 7 9 11 13 15 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 3. Typical reverse recovery charge as a function of diode current slope (VR=V, Dynamic test circuit in Figure E) Figure. Typical reverse recovery current as a function of diode current slope (VR=V, Dynamic test circuit in Figure E) 1 Rev.., 1111
IKQ1N6TA 36 Tj= C, IF = 1A Tj=175 C, IF = 1A Tj= C Tj=175 C 3 IF, FORWARD CURRENT [A] dirr/dt, diode peak rate of fall of Irr [A/µs] 6 8 1 18 1 6 1 5 7 9 11 13 15 dif/dt, DIODE CURRENT SLOPE [A/µs]..5 1. 1.5..5 3. VF, FORWARD VOLTAGE [V] Figure. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=V, Dynamic test circuit in Figure E) Figure 6. Typical diode forward current as a function of forward voltage. IF=38A IF=75A IF=1A IF=15A VF, FORWARD VOLTAGE [V] 3.5 3..5. 1.5 1..5. 5 75 1 1 15 175 Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical diode forward voltage as a function of junction temperature 13 Rev.., 1111
IKQ1N6TA PGTO736 Mold Flash or Protrusio not included MILLIMETERS DIM MIN MAX A.9 5.1 A1.31.51 1.9.1 A b 1.16 1.6 b1 1.96. b 1.96.6 b3.96 3. b.96 3.6 c.59.66.9 1.1 D D1 16. 16.85 1.5 1.35 D D3.58.78 E 15.7 15.9 13.1 13.5 E1 E3 1.35 1.55 5. (BSC) e N L L1 R INCHES MIN.193.91.75.6.77.77.117.117.3.83.6.1.3.618.516.53.1 (BSC) 3 19.8 1.9 MAX.1.99.83.5.89.81.18.1.6.831.663.53.31.66.531.61.78.75 1 SCALE 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 1381 3.1.3.1 DOCUMENT NO. Z8B1795.791.169.83 REVISION 1 Rev.., 1111
IKQ1N6TA vge(t) 9% VGE a a 1% VGE b b t ic(t) 9% IC 9% IC 1% IC 1% IC t vce(t) t td(off) tf td(on) t tr vge(t) 9% VGE 1% VGE t ic(t) CC % IC t vce(t) t E off = t VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt % VCE t3 t t3 t t 15 Rev.., 1111
IKQ1N6TA TRENCHSTOPTM series Revision History IKQ1N6TA Revision: 1111, Rev.. Previous Revision Revision Date Subjects (major changes since last revision) 1.1 1731 Preliminary data sheet.1 1117 Final data sheet. 1111 Update of Traconductance gfs We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8176 Munich, Germany 8176 München, Germany 1 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditio or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditio and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applicatio or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other perso may be endangered. 16 Rev.., 1111