800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 4.0 Ω (Typ.) @ =10V 100% Avalanche Tested BS = 800 V R DS(on) typ = 4.0 Ω = 2.5 A Dec 2005 D-PAK I-PAK 1 3 HFD3N80 2 1 2 3 HFU3N80 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Thermal Resistance Characteristics T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Drain Current Continuous (T C = 25 ) 2.5 A Drain Current Continuous (T C = 100 ) 1.57 A M Drain Current Pulsed (Note 1) 10 A Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 320 mj I AR Avalanche Current (Note 1) 2.5 A E AR Repetitive Avalanche Energy (Note 1) 7.0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T A = 25 ) * 2.5 W Power Dissipation (T C = 25 ) - Derate above 25 Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 1.78 R θja Junction-to-Ambient* -- 50 R θja Junction-to-Ambient -- 110 * When mounted on the minimum pad size recommended (PCB Mount) 70 W 0.56 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 /W
Electrical Characteristics T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 μa 2.5 -- 4.5 V R DS(ON) Static Drain-Source On-Resistance Off Characteristics = 10 V, = 1.25 A -- 4.0 4.8 Ω BS Drain-Source Breakdown Voltage = 0 V, = 250 μa 800 -- -- V ΔBS /ΔT J SS I GSSF I GSSR Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse = 250 μa, Referenced to25 -- 0.99 -- V/ = 800 V, = 0 V -- -- 1 μa = 640 V, T C = 125 -- -- 10 μa = 30 V, = 0 V -- -- 100 na = -30 V, = 0 V -- -- -100 na Dynamic Characteristics C iss Input Capacitance -- 700 910 pf = 25 V, = 0 V, C oss Output Capacitance -- 70 90 pf f = MHz C rss Reverse Transfer Capacitance -- 7 9 pf Switching Characteristics t d(on) Turn-On Time = 400 V, = 3.0 A, -- 20 40 ns t r Turn-On Rise Time R G = 25 Ω -- 55 110 ns t d(off) Turn-Off Delay Time -- 30 60 ns t f Turn-Off Fall Time (Note 4,5) -- 40 80 ns Q g Total Gate Charge = 640V, = 3.0 A, -- 17 22 nc Q gs Gate-Source Charge = 10 V -- 4.5 -- nc Q gd Gate-Drain Charge (Note 4,5) -- 7.5 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 2.5 I SM Pulsed Source-Drain Diode Forward Current -- -- 10 A V SD Source-Drain Diode Forward Voltage I S = 2.5 A, = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 3.0 A, = 0 V -- 650 -- ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs (Note 4) -- 5.2 -- μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, I AS =3.0A, =50V, R G =25Ω, Starting T J =25 C 3. I SD 2.5A, di/dt 200A/μs, BS, Starting T J =25 C 4. Pulse Test : Pulse Width 300μs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
Typical Characteristics, Drain Current [A], Drain Current [A], Drain-Source Voltage [V], Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics R DS(on), [Ω] Drain-Source On-Resistance R, Reverse Drain Current [A] 10 1 150 25 = 0V 2. 250μ s Pulse Test, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 0.2 0.4 0.6 0.8 1.2 1.4 V SD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] 1500 1200 900 600 300 C iss C oss C rss 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd = 0 V 2. f = 1 MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] 12 10 8 6 4 2 = 160V = 400V = 640V Note : = 3.0A 0 0 4 8 12 16 20 Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 0.9 = 0 V 2. = 250 μ A R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 0.5 = 10 V 2. = 1.5 A 0.8-100 -50 0 50 100 150 200 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 1 Operation in This Area is Limited by R DS(on) 3.0 2.5, Drain Current [A] * Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area DC 10 ms 100 ms 1 ms 100 µs, Drain Current [A] 2.0 1.5 0.5 0.0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z θ JC (t), Thermal Response 10-2 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 1.78 /WMa x. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 0.9 = 0 V 2. = 250 μ A R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 0.5 = 10 V 2. = 1.5 A 0.8-100 -50 0 50 100 150 200 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature, Drain Current [A] 10 1 10-2 Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 1 10 2 10 3, Drain-Source Voltage [V] DC 10 ms 1 ms 100 µs, Drain Current [A] 3.0 2.5 2.0 1.5 0.5 0.0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z θ JC (t), Thermal Response 10-2 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 1.78 /WMa x. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
12V 200nF 50KΩ 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q gs Q g Q gd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) 10V DUT V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- L L I 2 2 AS BS -------------------- BS -- BS I AS R G (t) 10V DUT (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I S L Driver R G Same Type as DUT dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension TO-252 6.6±0.2 2.3±0.1 5.35±0.15 0.5±0.05 1±0.2 5.6±0.2 2.7±0.3 9.7 +0.5-0.3 1.2±0.3 1.2±0.3 0.8±0.2 0.6±0.2 2.3typ 2.3typ 0.05 +0.1-0.05 0.5 +0.1-0.05
Package Dimension TO-251 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 5.6±0.2 7±0.2 0.75±0.15 0.8±0.15 7.5±0.3 0.6±0.1 0.5 +0.1-0.05 2.3typ 2.3typ 1.2±0.3