HSRH NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at INTERSIL or www.intersil.com/tsc Radiation Hardened, Ultra High Speed Current Feedback Amplifier DATASHEET FN Rev. The HSRH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with Intersil s proprietary, complementary bipolar UHF (DI bonded wafer) process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. These devices are QML approved and are processed and screened in full compliance with MILPRF. The HSRH s wide bandwidth, fast settling characteristic, and low output impedance make this amplifier ideal for driving fast A/D converters. Component and composite video systems will also benefit from this amplifier s performance, as indicated by the excellent gain flatness, and.%/. Deg. Differential Gain/Phase specifications (R L = ). Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 99. A hotlink is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE ( o C) 9F9VPA HSRHQ to 9F9VPC HSBRHQ to HFAIJ (Sample) HFAIJ to HFAXXEVAL Evaluation Board Features Electrically Screened to SMD # 99 QML Qualified per MILPRF Requirements Low Distortion (HD, MHz)........... dbc (Typ) Wide db Bandwidth................. MHz (Typ) Very High Slew Rate................ V/ s (Typ) Fast Settling (.%)..................... ns (Typ) Excellent Gain Flatness (to MHz)........dB (Typ) High Output Current................... ma (Typ) Fast Overdrive Recovery................ <ns (Typ) Total Gamma Dose................... krad(si) Latch Up..................... None (DI Technology) Applications Video Switching and Routing Pulse and Video Amplifiers Wideband Amplifiers RF/IF Signal Processing Flash A/D Driver Imaging Systems Pinout HSRH GDIPT (CERDIP) OR CDIPT (SBDIP) TOP VIEW NC NC IN IN V OUT V NC FN Rev. Page of
HSRH Typical Applications Optimum Feedback Resistor The enclosed plots of inverting and noninverting frequency response illustrate the performance of the HSRH in various gains. Although the bandwidth dependency on closed loop gain isn t as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier s unique relationship between bandwidth and R F. All current feedback amplifiers require a feedback resistor, even for unity gain applications, and R F, in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier s bandwidth is inversely proportional to R F. The HSRH design is optimized for a R F at a gain of. Decreasing R F in a unity gain application decreases stability, resulting in excessive peaking and overshoot. At higher gains the amplifier is more stable, so R F can be decreased in a tradeoff of stability for bandwidth. connected to IN, and connections to IN should be kept as short as possible. An example of a good high frequency layout is the Evaluation Board shown in Figure. Driving Capacitive Loads Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier s phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (R S ) in series with the output prior to the capacitance. Figure details starting points for the selection of this resistor. The points on the curve indicate the R S and C L combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. The table below lists recommended R F values for various gains, and the expected bandwidth. GAIN (ACL) R F ( ) BANDWIDTH (MHz) 9 R S ( ) A V = A V = PC Board Layout The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value ( F) tantalum in parallel with a small value (. F) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Care must also be taken to minimize the capacitance to ground seen by the amplifier s inverting input (IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under traces R S and C L form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of MHz. By decreasing R S as C L increases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at A V =, R S =, C L = pf, the overall bandwidth is limited to MHz, and bandwidth drops to MHz at A V =, R S =, C L = pf. Evaluation Board LOAD CAPACITANCE (pf) FIGURE. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE The performance of the HSRH may be evaluated using the HFAXXEVAL Evaluation Board. The layout and schematic of the board are shown in Figure. To order evaluation boards, please contact your local sales office. FN Rev. Page of
HSRH VH IN OUT V VL V GND FIGURE A. TOP LAYOUT FIGURE B. BOTTOM LAYOUT V H R IN. F OUT F V F. F V GND V L GND FIGURE C. SCHEMATIC FIGURE. EVALUATION BOARD SCHEMATIC AND LAYOUT Typical Performance Characteristics Device Characterized at: V SUPPLY = V, R F =, A V = V/V, R L =, Unless Otherwise Specified PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS Input Offset Voltage (Note ) V CM = V o C mv Average Offset Voltage Drift Versus Temperature Full V/ o C V IO CMRR V CM = V o C db V IO PSRR V S =.V o C db Input Current (Note ) V CM = V o C A Average Input Current Drift Versus Temperature Full na/ o C Input Current (Note ) V CM = V o C A Average Input Current Drift Versus Temperature Full na/ o C Input Resistance V CM = V o C k Input Resistance o C Input Capacitance o C. pf Input Noise Voltage (Note ) f = khz o C nv/ Hz Input Noise Current (Note ) f = khz o C pa/ Hz Input Noise Current (Note ) f = khz o C pa/ Hz Input Common Mode Range Full. V Open Loop Transimpedance A V = o C k FN Rev. Page of
HSRH Typical Performance Characteristics (Continued) Device Characterized at: V SUPPLY = V, R F =, A V = V/V, R L =, Unless Otherwise Specified PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS Output Voltage A V =, R L = o C. V A V =, R L = Full. V Output Current (Note ) A V =, R L = o C to o C ma A V =, R L = o C to o C ma DC Closed Loop Output Resistance o C. W Quiescent Supply Current (Note ) R L = Open Full ma db Bandwidth (Note ) A V =, R F =, V OUT = mv PP o C MHz A V =, R F =, V OUT = mv PP o C MHz A V =, R F =, V OUT = mv PP o C MHz Slew Rate A V =, R F =, V OUT = V PP o C V/ s A V =, V OUT = V PP o C V/ s Full Power Bandwidth V OUT = V PP o C MHz Gain Flatness (Note ) To MHz, R F = o C. db To MHz, R F = o C. db To MHz, R F = o C. db Linear Phase Deviation (Note ) To MHz, R F = o C. Degrees nd Harmonic Distortion (Note ) MHz, V OUT = V PP o C dbc MHz, V OUT = V PP o C 9 dbc MHz, V OUT = V PP o C dbc rd Harmonic Distortion (Note ) MHz, V OUT = V PP o C dbc MHz, V OUT = V PP o C dbc MHz, V OUT = V PP o C dbc rd Order Intercept (Note ) MHz, R F = o C dbm db Compression MHz, R F = o C dbm Reverse Isolation (S) MHz, R F = o C db MHz, R F = o C db MHz, R F = o C db Rise and Fall Time V OUT =.V PP o C ps V OUT = V PP o C ps Overshoot (Note ) V OUT =.V PP, Input t R /t F = ps o C % Settling Time (Note ) To.%, V OUT = V to V, R F = o C ns To.%, V OUT = V to V, R F = o C 9 ns To.%, V OUT = V to V, R F = o C ns Differential Gain A V =, R L =, NTSC o C. % Differential Phase A V =, R L =, NTSC o C. Degrees Overdrive Recovery Time R F =, V IN = V PP o C. ns NOTE:. See Typical Performance Curves for more information. FN Rev. Page of
HSRH Typical Performance Curves V SUPPLY = V, R F =, R L =, T A = o C, Unless Otherwise Specified OUTPUT VOLTAGE (mv) 9 9 OUTPUT VOLTAGE (V)..9.....9. ns/div. ns/div. FIGURE. SMALL SIGNAL PULSE RESPONSE (A V = ) FIGURE. LARGE SIGNAL PULSE RESPONSE (A V = ) GAIN (db) NORMALIZED 9 GAIN PHASE A V = A V = A V = A V = A V = 9 A V = A V = A V =. K PHASE (DEGREES) GAIN (db) NORMALIZED 9 GAIN PHASE A V = A V = A V = A V = A V = 9 A V = A V = 9 A V =. K PHASE (DEGREES) FIGURE. NONINVERTING FREQUENCY RESPONSE (V OUT = mv PP ) FIGURE. INVERTING FREQUENCY RESPONSE (V OUT = mv PP ) GAIN (db) GAIN PHASE R L = k R L = R L = R L = R L = R L = k 9 R L = R L = k. K FIGURE. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (A V =, V OUT = mv PP ) PHASE (DEGREES) GAIN (db) NORMALIZED GAIN PHASE R L = R L = RL = k R L = k R L = R L = R L = R L = k. K FIGURE. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (A V =, V OUT = mv PP ) 9 PHASE (DEGREES) FN Rev. Page of
HSRH Typical Performance Curves V SUPPLY = V, R F =, R L =, T A = o C, Unless Otherwise Specified (Continued) GAIN (db).v PP.V PP.9V PP.V PP GAIN (db) NORMALIZED.V PP.V PP.V PP.V PP. K FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (A V = ). K FIGURE. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (A V = ) GAIN (db) NORMALIZED.9V PP TO.9V PP BANDWIDTH (MHz) 9 9. K FIGURE. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (A V = ) TEMPERATURE ( o C) FIGURE. db BANDWIDTH vs TEMPERATURE (A V = ).. GAIN (db).... DEVIATION (DEGREES)...... 9 FIGURE. GAIN FLATNESS (A V = ) FIGURE. DEVIATION FROM LINEAR PHASE (A V = ) FN Rev. Page of
HSRH Typical Performance Curves V SUPPLY = V, R F =, R L =, T A = o C, Unless Otherwise Specified (Continued) SETTLING ERROR (%)...... INTERCEPT POINT (dbm) TIME (ns) FIGURE. SETTLING RESPONSE (A V =, V OUT = V) FIGURE. RD ORDER INTERMODULATION INTERCEPT (TONE) DISTORTION (dbc) MHz MHz MHz DISTORTION (dbc) 9 MHz MHz MHz 9 OUTPUT POWER (dbm) 9 OUTPUT POWER (dbm) FIGURE. ND HARMONIC DISTORTION vs P OUT FIGURE. RD HARMONIC DISTORTION vs P OUT OVERSHOOT (%) V OUT = V PP V OUT =.V PP V OUT = V PP 9 INPUT RISE TIME (ps) OVERSHOOT (%) R F = V OUT =.V PP R F = V OUT = V PP R F = V OUT = V PP R F = V OUT = V PP R F = V OUT =.V PP 9 INPUT RISE TIME (ps) R F = V OUT = V PP FIGURE 9. OVERSHOOT vs INPUT RISE TIME (A V = ) FIGURE. OVERSHOOT vs INPUT RISE TIME (A V = ) FN Rev. Page of
HSRH Typical Performance Curves V SUPPLY = V, R F =, R L =, T A = o C, Unless Otherwise Specified (Continued) OVERSHOOT (%) FEEDBACK RESISTOR ( ) SUPPLY CURRENT (ma) 9 TEMPERATURE ( o C) FIGURE. OVERSHOOT vs FEEDBACK RESISTOR (A V =, t R = ps, V OUT = V PP ) FIGURE. SUPPLY CURRENT vs TEMPERATURE SUPPLY CURRENT (ma) 9 9 9 TOTAL SUPPLY VOLTAGE (V V, V) INPUT OFFSET VOLTAGE (mv).........9...... I BIAS V IO I BIAS TEMPERATURE ( o C) 9 9 BIAS CURRENTS ( A) FIGURE. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE. V IO AND BIAS CURRENTS vs TEMPERATURE OUTPUT VOLTAGE (V)........9.... V OUT V OUT NOISE VOLTAGE (nv/ HZ) ENI eni INI iniini INI K K K NOISE CURRENT (pa/ HZ) TEMPERATURE ( o C) FREQUENCY (Hz) FIGURE. OUTPUT VOLTAGE vs TEMPERATURE (A V =, R L = ) FIGURE. INPUT NOISE vs FREQUENCY FN Rev. Page of
HSRH Test Circuit V I. CC V IN K = POSITION : V IO = V X V X X K = POSITION : NC... pf K. DUT K V OUT I BIAS = V X K pf K I BIAS = V Z K V Z K (.%) HA.. V I EE NOTES:. Unless otherwise noted, component value multiplier and tolerances shall be as follows: Resistors, %. Capacitors, F %. Chip Components Recommended. Test Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE V (V) V (V) V IN R S R F V OUT V IN R S R F V OUT V (V) V (V) R G A V = TEST CIRCUIT A V = TEST CIRCUIT V OUT.V 9% 9%.V V OUT mv 9% 9% mv SR SR T R, OS T F, OS.V % %.V mv % % mv LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM FN Rev. Page 9 of
HSRH BurnIn Circuit HSRH CERDIP R Irradiation Circuit HSRH CERDIP R R R D V D C D C D V R R V C D C V NOTES:. R = R = k, % (Per Socket).. R = k, % (Per Socket).. C = C =. F (Per Socket) or. F (Per Row) Min.. D = D = N or Equivalent (Per Board).. D = D = N or Equivalent (Per Socket). 9. V =.V.V.. V =.V.V. NOTES:. R = R = k, %.. R = k, %.. C = C =. F.. V =.V.V.. V =.V.V. Copyright Intersil Americas LLC 999. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN Rev. Page of
HSRH Die Characteristics DIE DIMENSIONS: mils x mils x 9 mils mil ( m x m x m. m) INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: kå.kå Top Metallization: Type: Metal : AICu(%)/TiW Thickness: Metal : kå.kå Type: Metal : AICu (%) Thickness: Metal : kå.kå Metallization Mask Layout HSRH Substrate: UHF, Bonded Wafer, DI ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Floating ADDITIONAL INFORMATION: Worst Case Current Density:. x A/cm Transistor Count: IN IN V VL BAL BAL VH V OUT FN Rev. Page of