IGBT XPT Module H Bridge

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Transcription:

IGBT XPT Module H Bridge Preliminary data CES = 12 25 = 85 CE(sat) = 1.8 Part name (Marking on product) MIX 61H12ED 13 1 T1 D1 9 T5 D5 2 1 16 E72873 14 3 T2 D2 11 T6 D6 4 12 17 Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 µsec. - very low gate charge - square RBSO @ 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E2-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting 21159a 211 IXYS ll rights reserved 1-6

Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 25 C 12 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 25 collector current T C = 25 C 8 T C = 8 C ±2 ±3 85 6 P tot total power dissipation T C = 25 C 29 W CE(sat) collector emitter saturation voltage = 55 ; GE = 15 = 25 C 1.8 2.1 2.1 GE(th) gate emitter threshold voltage = 2 m; GE = CE = 25 C 5.4 6. 6.5 ES collector emitter leakage current CE = CES ; GE = = 25 C.2.5 m m I GES gate emitter leakage current GE = ±2 5 n Q G(on) total gate charge CE = 6 ; GE = 15 ; = 5 165 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = 6 ; = 5 GE = ±15 ; R G = 15 W RBSO reverse bias safe operating area GE = ±15 ; R G = 15 W; CEK = 12 15 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current 7 4 25 4.5 5.5 CE = 9 ; GE = ±15 ; R G = 15 W; non-repetitive 2 mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).43 K/W Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 25 C 12 I F25 I F8 forward current T C = 25 C T C = 8 C F forward voltage I F = 6 ; GE = = 25 C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = 6 di F /dt = -12 /µs I F = 6 ; GE = 1.95 1.95 8 6 35 2.5 85 57 2.2 µc mj R thjc thermal resistance junction to case (per diode).6 K/W T C = 25 C unless otherwise stated 21159a 211 IXYS ll rights reserved 2-6

Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature -4-4 125 15 125 C C C ISOL isolation voltage I ISOL < 1 m; 5/6 Hz 3 ~ CTI comparative tracking index - M d mounting torque (M5) 3 6 Nm d S d creep distance on surface strike distance through air 6 6 mm mm R pin-chip resistance pin to chip 5 mw R thch thermal resistance case to heatsink with heatsink compound.2 K/W Weight 18 g Equivalent Circuits for Simulation I Symbol Definitio Conditio min. typ. max. Unit R R IGBT T1 - T6 = 15 C 1.1 25.1 free wheeling diode D1 - D6 = 15 C 1.22 R 12.99 T C = 25 C unless otherwise stated mw mw 21159a 211 IXYS ll rights reserved 3-6

Circuit Diagram 13 1 T1 D1 9 T5 D5 2 1 16 14 3 T2 D2 11 T6 D6 4 12 17 Outline Drawing Dimeio in mm (1 mm =.394 ) Product Marking XXXXXXXXXX yywwx Logo UL Part name Date Code 2D Data Matrix: FOSS-ID 6 digits Batch # 6 digits Location Part number M = Module I = IGBT X = XPT = standard 61 = Current Rating [] H = H~ Bridge 12 = Reverse oltage [] ED = E2-Pack Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX61H12ED MIX61H12ED Box 6 5116 21159a 211 IXYS ll rights reserved 4-6

Inverter T1 - T6 8 GE = 15 8 GE = 15 17 19 13 11 6 = 25 C 6 [] 4 [] 4 9 2 2 1 2 3 [] CE Fig. 1 Typ. output characteristics 1 2 3 4 CE [] Fig. 2 Typ. output characteristics 8 2 15 = 5 CE = 6 [] 6 4 GE [] 1 2 5 = 25 C 5 6 7 8 9 1 11 12 13 GE [] Fig. 3 Typ. tranfer characteristics 4 8 12 16 2 24 Q G [nc] Fig. 4 Typ. turn-on gate charge 1 8 R G = 15 Ω CE = 6 GE = ±15 E on E off 6. 5.5 E off 6 E [mj] 4 2 E 5. [mj] 4.5 E on = 5 CE = 6 GE = ±15 2 4 6 8 12 [] Fig. 5 Typ. switching energy vs. collector current 4. 12 16 2 24 28 32 R G [Ω W] Fig. 6 Typ. switching energy vs. gate resistance 21159a 211 IXYS ll rights reserved 5-6

Inverter D1 - D6 12 4. 3.2 R = 6 12 [] 8 6 4 2 = 25 C E rec [mj] 2.4 1.6.8 6 3..5 1. 1.5 2. 2.5 3. F [] Fig. 7 Typ. Forward current versus F. 6 7 8 9 1 12 13 di F /dt [/µs] Fig. 8 Typ. recovery energy E rec versu versus di/dt IGBT FRD 1 R i t i R i t i 1.1.25.137.25 2.5.3.1.3 3.21.3.233.3 4.7.8.13.8 Diode R [Ω] Z thjc.1 [K/W] IGBT 25 5 75 125 15 T C [ C] Fig. 9 Typ. NTC resistance versus temperature.1.1.1.1 1 1 t p [s] Fig. 1 9 Typ. traient thermal impedance 21159a 211 IXYS ll rights reserved 6-6

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