IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C 2VTRENCHSTOP TM IGBT6technologyoffering: Highefficiencyinhardswitchingandresonanttopologies Easyparallelingcapabilityduetopositivetemperature coefficientinvcesat LowEMI LowGateChargeQg Verysoft,fastrecoveryantiparalleldiode Maximumjunctiontemperature75 C Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: IndustrialUPS Charger Energystorage ThreelevelSolarStringInverter Welding G C E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec47/2/22 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package IKW5N2BH6 2V 5A.9V 75 C K5MBH6 PGTO2473 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2. www.infineon.com 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries TableofContents Description........................................................................ Table of Contents................................................................... 2 Maximum Ratings................................................................... 3 Thermal Resistance................................................................. 3 Electrical Characteristics.............................................................. 4 Electrical Characteristics Diagrams..................................................... 6 Package Drawing...................................................................3 Testing Conditions..................................................................4 Revision History....................................................................5 Disclaimer.........................................................................6 2 V2. 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 2 V DCcollectorcurrent,limitedbyTvjmax Tc=25 C Tc= C IC 3. 5. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 6. A TurnoffsafeoperatingareaVCE 2V,Tvj 75 C 6. A Diodeforwardcurrent,limitedbyTvjmax Tc=25 C Tc= C IF 5. 7.5 Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 6. A Gateemitter voltage TransientGateemittervoltage(tp.5µs,D<.) Short circuit withstand time VGE=5.V,VCC 5V Allowed number of short circuits < Time between short circuits:.s Tvj=5 C PowerdissipationTc=25 C PowerdissipationTc= C VGE tsc Ptot ±2 25 3 2.. Operating junction temperature Tvj 4...+75 C Storage temperature Tstg 55...+5 C Soldering temperature, wave soldering.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A A V µs W C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).74 K/W Rth(jc) 2.4 K/W Rth(ja) 4 K/W 3 V2. 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter saturation voltage Diode forward voltage Diode forward voltage VCEsat VF VF VGE=5.V,IC=5.A Tvj=25 C Tvj=25 C Tvj=75 C VGE=V,IF=7.5A Tvj=25 C Tvj=75 C VGE=V,IF=5.A Tvj=25 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.5mA,VCE=VGE 5. 5.7 6.3 V Zero gate voltage collector current ICES VCE=2V,VGE=V Tvj=25 C Tvj=75 C Gateemitter leakage current IGES VCE=V,VGE=2V 6 na Transconductance gfs VCE=2V,IC=5.A. S.9 2.2 2.35 2. 2. 2.65 2.75 45 2.3 2.4 3.2 25 V V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 86 Output capacitance Coes VCE=25V,VGE=V,f=MHz 6 Reverse transfer capacitance Cres 4 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=96V,IC=5.A, VGE=5V pf 92. nc LE 3. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 8 ns Rise time VCC=6V,IC=5.A, tr 29 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=22.Ω,RG(off)=22.Ω, 24 ns Fall time Lσ=95nH,Cσ=67pF tf 25 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.7 mj Turnoff energy Eoff diode reverse recovery..55 mj Total switching energy Ets.25 mj 4 V2. 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 34 ns Diode reverse recovery charge VR=6V, Qrr.83 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=5a/µs, 8.3 A Diode peak rate of fall of reverse Lσ=95nH, dirr/dt Cσ=67pF 55 A/µs recoverycurrentduringtb SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=75 C Turnon delay time td(on) Tvj=75 C, 7 ns Rise time VCC=6V,IC=5.A, tr 29 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=22.Ω,RG(off)=22.Ω, 3 ns Fall time Lσ=95nH,Cσ=67pF tf 63 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.95 mj Turnoff energy Eoff diode reverse recovery.. mj Total switching energy Ets 2.5 mj DiodeCharacteristic,atTvj=75 C Diode reverse recovery time trr Tvj=75 C, 54 ns Diode reverse recovery charge VR=6V, Qrr.75 µc IF=5.A, Diode peak reverse recovery current Irrm dif/dt=5a/µs,.3 A Diode peak rate of fall of reverse Lσ=95nH, dirr/dt Cσ=67pF 42 A/µs recoverycurrentduringtb 5 V2. 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries not for linear use 6 VGE=2V 7V 5 5V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 4 3 2 3V V 9V 7V VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,Tvj 75 C;VGE=5V,pulsewidth limitedbytvjmax) 2 3 4 5 6 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 2. Typicaloutputcharacteristic (Tvj=25 C) 6 VGE=2V 7V 6 Tvj=25 C Tvj=75 C 5 5V 5 IC,COLLECTORCURRENT[A] 4 3 2 3V V 9V 7V IC,COLLECTORCURRENT[A] 4 3 2 2 3 4 5 6 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=75 C) 4 6 8 2 4 VGE,GATEEMITTERVOLTAGE[V] Figure 4. Typicaltransfercharacteristic (VCE=2V) 6 V2. 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries VCEsat,COLLECTOREMITTERSATURATION[V] 4. 3.5 3. 2.5 2..5..5 IC=7.5A IC=5A IC=3A t,switchingtimes[ns] td(off) tf td(on) tr. 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 5. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) 5 5 2 25 3 IC,COLLECTORCURRENT[A] Figure 6. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=5/V,RG=22Ω,Dynamictestcircuitin Figure E) td(off) tf td(on) tr td(off) tf td(on) tr t,switchingtimes[ns] t,switchingtimes[ns] 2 4 6 8 2 RG,GATERESISTOR[Ω] Figure 7. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tvj=75 C,VCE=6V, VGE=5/V,IC=5A,Dynamictestcircuitin 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=6v,vge=5/v, IC=5A,RG=22Ω,Dynamictestcircuitin Figure E) 7 Figure E) V2. 2857
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] 7. 6.5 6. 5.5 5. 4.5 4. 3.5 typ. min. max. E,SWITCHINGENERGYLOSSES[mJ] 5. 4.5 4. 3.5 3. 2.5 2..5..5 Eoff Eon Ets 3. 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 9. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=.5mA) 4.5. 5 5 2 25 3 IC,COLLECTORCURRENT[A] Figure. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=5/V,RG=22Ω,Dynamictestcircuitin Figure E) 2.5 4. E,SWITCHINGENERGYLOSSES[mJ] 3.5 3. 2.5 2..5. Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 2..5..5 Eoff Eon Ets.5. 2 4 6 8 2 RG,GATERESISTOR[Ω] Figure. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tvj=75 C,VCE=6V, VGE=5/V,IC=5A,Dynamictestcircuitin. 25 5 75 25 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 2. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=6v,vge=5/v, IC=5A,RG=22Ω,Dynamictestcircuitin Figure E) 8 Figure E) V2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series 3. 8 Tvj=25 C Tvj=75 C 7 dif/dt, DIODE CURRENT SLOPE [A/µs] E, SWITCHING ENERGY LOSSES [mj] 2.5 Eoff Eon Ets 2..5. 6 5 4 3 2.5. 4 45 5 55 6 65 7 75 8 2 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj=75 C, VGE=5/V, IC=5A, RG=22Ω, Dynamic test circuit in Figure E) 6 8 2 Figure 4. Typical diode current slope as a function of gate resistor (inductive load, VCE=6V, VGE=/5V, IC=4A, Dynamic test circuit in Figure E) 6 E+4 VCC = 24V VCC = 96V Cies Coes Cres 4 2 C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] 4 RG, GATE RESISTOR [Ω] 8 6 4 2 2 4 6 8 QGE, GATE CHARGE [nc] Figure 5. Typical gate charge (IC=5A) 5 5 2 25 3 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 6. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) 9 V 2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series 6. 5.5 tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] 9 8 7 6 5 5. 4.5 4. 3.5 3. 2.5 4 2. 2.5 3. 3.5 4. 4.5 2. 2. 5. VGE, GATEEMITTER VOLTAGE [V] 2.5 3. 3.5 4. 4.5 5. VGE, GATEEMITTER VOLTAGE [V] Figure 7. Typical short circuit collector current as a function of gateemitter voltage (VCE 5V, Tvj 5 C) Figure 8. Short circuit withstand time as a function of gateemitter voltage (VCE 5V, start at Tvj 5 C). Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] D=.5.2...5.2. single pulse. E4 D=.5.2..5.. single pulse. i: 2 3 4 5 ri[k/w]:.68823.273634.284453.358942 2.E3 τi[s]: 3.E4 2.9E3.523587.2353 2.475492 E5 E8 E7 E6 E5 E4... i: 2 3 4 5 ri[k/w]:.87975.8659.928847.354893.29824 τi[s]: 4.2E5 3.9E4 2.7E3.7698.95848. E7 tp, PULSE WIDTH [s] Figure 9. IGBT transient thermal resistance (D=tp/T).2 E6 E5 E4... tp, PULSE WIDTH [s] Figure 2. Diode transient thermal impedance as a function of pulse width (D=tp/T) V 2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series 9 2. Tvj=25 C, IF = 5A Tvj=75 C, IF = 5A Tvj=25 C, IF = 5A Tvj=75 C, IF = 5A.8 Qrr, REVERSE RECOVERY CHARGE [µc] trr, REVERSE RECOVERY TIME [ns] 8 7 6 5 4.6.4.2. 3 2.8 2 3 4 5 6 7.6 8 dif/dt, DIODE CURRENT SLOPE [A/µs] 2 Figure 2. Typical reverse recovery time as a function of diode current slope (VR=6V) 6 7 8 Tvj=25 C, IF = 5A Tvj=75 C, IF = 5A 2 2 dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] 5 Tvj=25 C, IF = 5A Tvj=75 C, IF = 5A 8 6 4 4 6 8 2 3 4 5 6 7 8 2 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 23. Typical reverse recovery current as a function of diode current slope (VR=6V) 4 Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=6V) 4 2 3 dif/dt, DIODE CURRENT SLOPE [A/µs] 2 3 4 5 6 7 8 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=6V) V 2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series. 6 Tj=25 C, IF = 5A Tj=75 C, IF = 5A Tvj=25 C Tvj=75 C 5.8 IF, FORWARD CURRENT [A] Erec, SWITCHING ENERGY LOSSES [mj].9.7.6.5.4.3.2 4 3 2.. 2 3 4 5 6 7 8 dif/dt, DIODE CURRENT SLOPE [A/µs] 2 3 4 5 6 VF, FORWARD VOLTAGE [V] Figure 25. Typical reverse energy losses as a function of diode current slope (VR=6V) Figure 26. Typical diode forward current as a function of forward voltage 4.5 IF=7.5A IF=5A IF=3A VF, FORWARD VOLTAGE [V] 4. 3.5 3. 2.5 2..5. 25 5 75 25 5 75 Tvj, JUNCTION TEMPERATURE [ C] Figure 27. Typical diode forward voltage as a function of junction temperature 2 V 2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series Package Drawing PGTO2473 3 V 2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 4 V 2. 2857
IKW5N2BH6 Sixth generation, high speed soft switching series Revision History IKW5N2BH6 Revision: 2857, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 2857 Final data sheet 5 V 2. 2857
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