Data Sheet (Rev# - ##/##/####) CCSAC43N40A10 Features: 4000V Peak Off-State Voltage 5 ka Repetitive Ipk Capability 25KA/uS di/dt Capability Low On-State Voltage Low Trigger Current Application Specific Operating Conditions: Package Description: The CCS features the high peak current capability and low On-state voltage drop common to SCR thyristors combined with high di/dt capability. This semiconductor is intended to be a solid state replacement for spark or gas type devices commonly used in pulse power applications. All bond areas are metalized with solderable metal surfaces providing the user with a solderable device that may be installed using conventional or lead free solders. Schematic Symbol 1
Module Dimensions (Inches) 2
Absolute Maximum Ratings Symbol Value Units Peak Off-State Voltage V DRM 4 kv Peak Reverse Voltage V RRM -5 V Off-State Rate of Change of Voltage Immunity dv/dt 1 kv/µsec Continuous Anode Current at Tj = 125⁰C I A110 50 A Repetitive Peak Anode Current (Pulse Width = 10µSec) I ASM 5.0 ka Nonrepetitive Peak Anode Current (Pulse Width=10uSec) I ASM 8 ka Rate of Change of Current di/dt 25 ka/µsec Peak Gate Current (1µSec) I Gpk 50 A Max. Reverse Gate-Cathode Voltage V GR -9 V Maximum Junction Temperature T JM 125 ⁰C Maximum Soldering Temperature (Installation) 320 ⁰C Performance Characteristics (T J = 25⁰C unless otherwise specified.) Parameters Symbol Test Conditions Min. Typ. Max. Units Anode to Cathode Breakdown Voltage V DR G to K shorted, I A =1mA 4 kv Anode-Cathode Off-State Current I D G to K shorted, V AK =4000V T J =25 o C 0.5 1 ua T J =125 o C 100 800 ua Turn-On Threshold Current V GK(TH) V AK =V GK, I AK =1mA, see Note: 1 70 ma Gate-Cathode Leakage Current I GK(lkg) V GK =-9V, see Note: 1-20 ua Anode-Cathode On-State Voltage V T I T =100A T J =25 o C 1.8 V Ig = 500 ma T J =125 o C 2 V Turn-on Delay Time t D(ON) C=0.75 uf Capacitor discharge 160 ns Pk Rate of Change of Current (measured) di/dt Ls=150nH 25 ka/us V R Peak Anode Current I gk = 10 ohms AK = 3750 P V 2950 A Gate di/dt =100 A/us T c =25 C Notes: 1. Measurements made with a 10 Ohm shorting resistor connected between the gate and cathode. 3
Typical Performance Curves (unless otherwise specified) Figure 1: Measured Low Current On-State Characteristics. Figure 2: Predicted I2t data for various number of discharge cycles. Pulses are assumed rectangular. The device junction temperature TJ is assumed to be at 25oC before each discharge event. 4
Figure 3: Typical test circuit and waveforms. Packaging and Handling 1. ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES IN ALL ASSEMBLY AND TEST AREAS. Proper handling procedures must be observed to prevent electrostatic discharge which may result in permanent damage to the device. 2. The user is required to encapsulate the device in an encapsulant material prior to applying high voltage. This prevents debris and contaminants from compromising the JTE area. 2. Use of a separate gate return path instead of the cathode power contact is recommended to minimize the effects of rapidly changing Anode-Cathode currents. 3. Shorting resistor R GK is application specific. It can control the gate drive requirements and some device properties. However, R GK = 10 Ohms satisfies most application requirements. 4. Installation reflow temperature should not exceed 320 C or device degradation may result. 5
Revision History: Rev Date EA# Nature of Change 1 ##/##/#### ########-AB-#### 6