INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @25 C, V GE = 5V Generation 4 IGBT design provides tighter parameter G distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, E ultra-soft recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings PD -9582B IRG4PC5KD Short Circuit Rated UltraFast IGBT V CES = 6V V CE(on) typ. =.84V @V GE = 5V, 3A TO-247AC Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 52 I C @ T C = C Continuous Collector Current 3 I CM Pulsed Collector Current ➀ 4 A I LM Clamped Inductive Load Current ➁ 4 I F @ T C = C Diode Continuous Forward Current 25 I FM Diode Maximum Forward Current 28 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation 2 P D @ T C = C Maximum Power Dissipation 78 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R qjc Junction-to-Case - IGBT.64 R qjc Junction-to-Case - Diode.83 C/W R qcs Case-to-Sink, flat, greased surface.24 R qja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) www.irf.com 2/3/98
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage ➂ 6 V V GE = V, 25µA DV (BR)CES /DT J Temperature Coeff. of Breakdown Voltage.47 V/ C V GE = V,.mA V CE(on) Collector-to-Emitter Saturation Voltage.84 2.2 3A V GE = 5V 2.9 V 52A see figures 2, 5.79 25A, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, 25µA DV GE(th) /DT J Temperature Coeff. of Threshold Voltage -2 mv/ C V CE = V GE, 25µA g fe Forward Transconductance ➃ 7 24 S V CE = V, 3A I CES Zero Gate Voltage Collector Current 25 µa V GE = V, V CE = 6V 65 V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop.3.7 V 25A see figure 3.2.5 25A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 2 3 3A Q ge Gate - Emitter Charge (turn-on) 25 38 nc V CC = 4V see figure 8 Q gc Gate - Collector Charge (turn-on) 85 27 V GE = 5V t d(on) Turn-On Delay Time 63 t r Rise Time 49 T J = 25 C ns t d(off) Turn-Off Delay Time 5 22 3A, V CC = 48V t f Fall Time 95 4 V GE = 5V, R G = 5.W E on Turn-On Switching Loss.6 Energy losses include "tail" E off Turn-Off Switching Loss.84 mj and diode reverse recovery E ts Total Switching Loss 2.45 3.see figures 9,,8 t sc Short Circuit Withstand Time µs V CC = 36V, T J = 25 C V GE = 5V, R G = W, V CPK < 5V t d(on) Turn-On Delay Time 6 T J = 5 C, see figures,8 t r Rise Time 46 3A, V CC = 48V ns t d(off) Turn-Off Delay Time 3 V GE = 5V, R G = 5.W t f Fall Time 7 Energy losses include "tail" E ts Total Switching Loss 3.53 mj and diode reverse recovery L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 32 V GE = V C oes Output Capacitance 37 pf V CC = 3V see figure 7 C res Reverse Transfer Capacitance 95 ƒ =.MHz t rr Diode Reverse Recovery Time 5 75 ns T J = 25 C see figure 5 6 T J = 25 C 4 I F = 25A I rr Diode Peak Reverse Recovery Current 4.5 A T J = 25 C see figure 8. 5 T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge 2 375 nc T J = 25 C see figure 42 2 T J = 25 C 6 di/dt 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 25 A/µs T J = 25 C see figure During t b 6 T J = 25 C 7 2 www.irf.com
35 LOAD CURRENT (A) 3 25 2 5 Square wave: 6% of rated voltage I For both: Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 4 W 5 Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T J = 25 C 5 C T J = 5 C V GE = 5V 2µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics I C, Collector-to-Emitter Current (A) T J = 5 C T = 25 J C V CC = 5V 5µs PULSE WIDTH 5 6 7 8 9 2 V GE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 6 5 4 3 2 V CE, Collector-to-Emitter Voltage(V) 3. 2. V GE = 5V 8 us PULSE WIDTH 6 A 3 A 5 A 25 5 75 25 5 T C, Case Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc )...5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D =t / t2 2. Peak T J = PDM x Z thjc + TC...... t, Rectangular Pulse Duration (sec) PDM Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case t t2 4 www.irf.com
C, Capacitance (pf) 5 4 3 2 VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CC = 4V 3A C res V CE, Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 4 8 2 6 2 Q G, Total Gate Charge (nc) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 4.5 4. 3.5 3. 2.5 V CC = 48V V GE = 5V T = 25 J C 3A Total Switching Losses (mj) R G = 5.W Ohm V GE = 5V V CC = 48V 6 A 3 A 5 A 2. 2 3 4 5 R G, Gate Resistance (W) Fig. 9 - Typical Switching Losses vs. Gate Resistance. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C ) Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 2 8 6 4 2 R G = 5.W Ohm T J = 5 C V CC = 48V V GE = 5V 2 3 4 5 6 7 I C, Collector-to-emitter Current (A) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current I C, Collector-to-Emitter Current (A) V GE = 2V T = 25 o J C SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 5 C T J = 25 C T J = 25 C t rr - (ns) 4 2 8 6 I F = 5A I F = 25A I F = A V R = 2V T J = 25 C T J = 25 C 4 6.6..4.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 2 di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt www.irf.com
5 V R = 2V T J = 25 C T J = 25 C 2 V R = 2V T J = 25 C T J = 25 C I IRRM - (A) I F = 5A I F = 25A I F = A Q RR - (nc) 9 6 I F = 5A I F = 25A 3 di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt I F = A di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt V R = 2V T J = 25 C T J = 25 C di(rec)m/dt - (A/µs) I = A F I F = 25A Mechanical drawings, Appendix A Test Circuit diagrams, Appendix B Switching Loss Waveforms, Appendix C I F = 5A di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. 8% of Vce 43µF D.U.T. V ge % 9% VC 9% t d(off) Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f I 5% % C t d(on) tr E on E ts = (E on +E off ) t f E off t=5µs Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx Vcc % Ic td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
V g GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 8V R L = 8V 4 X I C @25 C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ),V GE =2V, L=µH, R G = 5.W (figure 9) ƒ Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. Case Outline TO-247AC * 2.3 (.8) 9.7 (.775) 4.8 (.583) 4.2 (.559) 2.4 (.94) 2. (.79) 2X 5.45 (.25) 2X 5.9 (.626) 5.3 (.62) - B - 2 3.4 (.56) 3X. (.39).25 (.) M C A S 3.4 (.33) 3. (.8) 3.65 (.43) 3.55 (.4).25 (.) M D - A - 5.5 (.27) 2X - C - 4.3 (.7) 3.7 (.45) 5.5 (.27) 4.5 (.77) B M - D - 5.3 (.29) 4.7 (.85) 2.5 (.89).5 (.59) 4.8 (.3) 3X.4 (.6) 2.6 (.2) 2.2 (.87) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOW N MILLIMETERS (INCHES). 4 CO N FOR M S TO JED E C O UTLINE TO-247AC. LEAD ASSIGNMENTS - GATE 2 - COLLECTOR 3 - EM ITTER 4 - COLLECTOR * LONGER LEADED (2mm) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dim ensions in Millimeters and (Inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) 322 333 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 883 7322 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (95) 453 22 IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: ++ 49 672 9659 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 45 IR FAR EAST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 86 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 838 463 IR TAIWAN:6 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/98 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/