DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS = -.8V -3. -2. This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Motor Control Power Management Functions DC-DC Converters Backlighting Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and ntimony Free. Green Device (Note 3) Qualified to EC-Q standards for High Reliability Mechanical Data Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminals Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections Indicator: See diagram Weight:.3 grams (approximate) TSOT26 Q D Q2 D2 G 6 D S2 2 5 S G G2 G2 3 4 D2 Top View Top View Pin Configuration S N-Channel S2 P-Channel Ordering Information (Note 4) Part Number Compliance Case Packaging DMC238LVT-7 Standard TSOT26 3/Tape & Reel DMC238LVTQ-7 utomotive TSOT26 3/Tape & Reel Notes:. No purposely added lead. Fully EU Directive 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. 2. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at http:///products/packages.html Marking Information 3C YM 3C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2) M = Month (ex: 9 = September) Date Code Key Year 2 2 22 23 24 25 26 Code X Y Z B C D Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov Dec Code 2 3 4 5 6 7 8 9 O N D DMC238LVT of September 23
DMC238LVT Maximum Ratings N-CHNNEL Q (@, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS 2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 5) V GS = 4.5V Continuous Drain Current (Note 6) V GS = 4.5V Steady State t<s Steady State t<s T = +7 C T = +7 C T = +7 C T = +7 C Maximum Continuous Body Diode Forward Current (Note 6) I S.5 Pulsed Drain Current (µs pulse, duty cycle = %) M 25 3.7 3. 4. 3.2 4.5 3.6 5.2 4.2 Maximum Ratings P-CHNNEL Q2 (@, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS -2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 5) V GS = -4.5V Continuous Drain Current (Note 6) V GS = -4.5V Steady State t<s Steady State t<s T = +7 C T = +7 C T = +7 C T = +7 C Maximum Continuous Body Diode Forward Current (Note 6) I S -.5 Pulsed Drain Current (µs pulse, duty cycle = %) M -7-2.6-2. -2.9-2.4-3. -2.5-3.8-3. Thermal Characteristics (@, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5).8 P D T = +7 C.5 W Thermal Resistance, Junction to mbient (Note 5) Steady State 68 R t<s J 2 C/W Total Power Dissipation (Note 6). P D T = +7 C.7 W Thermal Resistance, Junction to mbient (Note 6) Steady State 4 R θj t<s 72 C/W Thermal Resistance, Junction to Case (Note 6) R θjc 39 Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with inch square copper plate. DMC238LVT 2 of September 23
DMC238LVT Electrical Characteristics N-CHNNEL Q (@, unless otherwise specified.) OFF CHRCTERISTICS (Note 7) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS 2 V V GS = V, = 25μ Zero Gate Voltage Drain Current @T c = +25 C SS. μ V DS =6V, V GS = V Gate-Source Leakage I GSS ± n V GS = ±2V, V DS = V ON CHRCTERISTICS (Note 7 ) Gate Threshold Voltage V GS(th).4. V V DS = V GS, = 25μ 27 35 V GS = 4.5V, = 4. Static Drain-Source On-Resistance R DS (ON) 33 43 mω V GS = 2.5V, = 2.5 43 56 V GS =.8V, =.5 Forward Transfer dmittance Y fs 9 S V DS = 5V, = 3.4 Diode Forward Voltage V SD.4. V V GS = V, I S = DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss 4 53 pf Output Capacitance C oss 7 9 pf Reverse Transfer Capacitance C rss 65 pf V DS = V, V GS = V, f =.MHz Gate Resistance R g.9 Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.5V) Q g 5.7 nc Total Gate Charge (V GS = V) Q g 2 7 nc Gate-Source Charge Q gs.7 nc Gate-Drain Charge Q gd.4 nc Turn-On Delay Time t D(on) 5 ns Turn-On Rise Time t r 8 6 ns Turn-Off Delay Time t D(off) 25 4 ns Turn-Off Fall Time t f 8 6 ns V DS = 5V, = 5.8 V DS = V, V GS = 4.5V, R G = 6Ω, S =, Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing., DRIN CURRENT () 3 25 2 5 V =V GS V GS=4.5V V GS=4.V V GS=3.5V V GS=3.V V GS=2.5V V GS=2.V, DRIN CURRENT () 2 5 5 V = 5.V DS T = -55 C T = 25 C T = 85 C T = 5 C T = 25 C 5 V GS=.5V.5.5 2 V DS, DRIN -SOURCE VOLTGE(V) Fig. Typical Output Characteristics.5.5 2 2.5 3 V GS, GTE SOURCE VOLTGE(V) Fig. 2 Typical Transfer Characteristics DMC238LVT 3 of September 23
DMC238LVT R DS(ON),DRIN-SOURCE ON-RESISTNCE( ).8.7.6.5.4.3.2. V =.8V GS V = 2.5V GS V = 4.5V GS 5 5 2, DRIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRIN-SOURCE ON-RESISTNCE( ).8.6.4.2 V = 4.5V GS T = 85 C T = 25 C T = 25 C T = 5 C T = -55 C 4 8 2 6 2, DRIN SOURCE CURRENT () Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (Normalized).5.7.5.3..9.7.5-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 5 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ).6.5.4.3.2. 2 V GS=5V =5 V GS=V = -5-25 25 5 75 25 5 T, J JUNCTION TEMPERTURE (C) Fig. 6 On-Resistance Variation with Temperature V GS(TH), GTE THRESHOLD VOLTGE(V).5 I =m D I =25µ D I, S SOURCE CURRENT () 8 6 4 2 8 6 4 2 T = 25 C -5-25 25 5 75 25 5 T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold Variation vs. mbient Temperature.2.4.6.8.2.4 V SD, SOURCE-DRIN VOLTGE (V) Fig. 8 Diode Forward Voltage vs. Current DMC238LVT 4 of September 23
DMC238LVT f = MHz C T, JUNCTION CPCITNCE (pf) C ISS C OSS C RSS 5 5 2 V DS, DRIN-SOURCE VOLTGE (V) Fig. 9 Typical Junction Capacitance V GS, GTE-SOURCE VOLTGE (V) 8 6 4 2 V =5V DS 2 4 6 8 2 4 Q g, TOTL GTE CHRGE (nc) Fig. Gate-Charge Characteristics, DRIN CURRENT () RDS(on) Limited DC P W = s P W = s P W = ms P W = ms P. W = ms T J(max) = 5 C P W = µs T = 25 C V GS = V Single Pulse. DUT on * MRP Board. V DS, DRIN-SOURCE VOLTGE (V) Fig. SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 R J(t) = r(t) * R J R J = 64 C/W Duty Cycle, D = t/ t2 Single Pulse......, t, PULSE DURTION TIMES (sec) Fig. 2 Transient Thermal Resistance D =.9 DMC238LVT 5 of September 23
DMC238LVT Electrical Characteristics P-CHNNEL Q2 (@, unless otherwise specified.) OFF CHRCTERISTICS (Note 7) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -2 V V GS = V, = -25μ Zero Gate Voltage Drain Current @T c = +25 C SS -. μ V DS = -6V, V GS = V Gate-Source Leakage I GSS ± n V GS = ±2V, V DS = V ON CHRCTERISTICS (Note 7) Gate Threshold Voltage V GS(th) -.4 -. V V DS = V GS, = -25 57 74 V GS = -4.5V, = -3. Static Drain-Source On-Resistance R DS (ON) 76 mω V GS = -2.5V, = -.5 2 68 V GS = -.8V, = -. Forward Transfer dmittance Y fs S V DS = -5V, = -3. Diode Forward Voltage V SD -.8 -. V V GS = V, I S = -.6 DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss 53 75 pf Output Capacitance C oss 7 95 pf Reverse Transfer Capacitance C rss 6 9 pf V DS = -V, V GS = V, f =.MHz Gate Resistance R g 72 - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = -4.5V) Q g 7 nc Total Gate Charge (V GS = -V) Q g 4 nc Gate-Source Charge Q gs.95 nc Gate-Drain Charge Q gd.2 nc Turn-On Delay Time t D(on) 2 ns Turn-On Rise Time t r 2 22 ns Turn-Off Delay Time t D(off) 2 34 ns Turn-Off Fall Time t f 3 23 ns V DS = -5V, = -6 V DS = -V, V GS = -4.5V, R G = 6Ω, I S = -, Notes: 7. Short duration pulse test used to minimize self-heating effec 8. Guaranteed by design. Not subject to product testing. 2 -V =V GS 2 -V =4.5V GS -, DRIN CURRENT () 5 5 -V =4.V GS -V =3.5V GS -V =3.V GS -V =2.5V GS -V =2.V GS I- D, DRIN CURRENT () 5 5 -V GS=.5V.5.5 2 -V DS, DRIN -SOURCE VOLTGE(V) Fig. 3 Typical Output Characteristics.5.5 2 2.5 3 3.5 4 4.5 5 -V GS, GTE SOURCE VOLTGE(V) Fig. 4 Typical Transfer Characteristics DMC238LVT 6 of September 23
DMC238LVT.6.2.8.4 V GS = -.8V V GS = -2.5V V GS = -4.5V 5 5 2 -, DRIN SOURCE CURRENT Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRIN-SOURCE ON-RESISTNCE( ).2.8.6.4.2..8.6.4.2 V = 4.5V GS T = 25 C T = 25 C T = 85 C T = 5 C T = -55 C 4 8 2 6 2 -, DRIN SOURCE CURRENT () Fig. 6 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (Normalized).7.5.3..9.7.5-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 7 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ).4.2..8.6.4.2 -V GS=5V -=5 -V GS=V -= -5-25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 8 On-Resistance Variation with Temperature.5 2 -V GS(TH), GTE THRESHOLD VOLTGE(V).5-5 -25 25 5 75 25 5 T, MBIENT TEMPERTURE ( C) Fig. 9 Gate Threshold Variation vs. mbient Temperature -I S, SOURCE CURRENT () 8 6 4 2 8 6 4 2.2.4.6.8.2.4.6 -V SD, SOURCE-DRIN VOLTGE (V) Fig. 2 Diode Forward Voltage vs. Current DMC238LVT 7 of September 23
DMC238LVT f = MHz C ISS C T, JUNCTION CPCITNCE (pf) C RSS C OSS 5 5 2 -V DS, DRIN-SOURCE VOLTGE (V) Fig. 2 Typical Junction Capacitance -V GS, GTE-SOURCE VOLTGE (V) 8 6 4 2 Q g vs. VGS 2 4 6 8 2 4 Q g, TOTL GTE CHRGE (nc) Fig. 22 Gate-Charge Characteristics 6 -, DRIN CURRENT () RDS(on) Limited DC P W = s P W = s P W = ms P W = ms. T J(max) = 5 C P W = ms T = 25 C P W = µs V GS = -V Single Pulse DUT on * MRP Board.. -V DS, DRIN-SOURCE VOLTGE (V) Fig. 23 SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 R J(t) = r(t) * R J R J = 64 C/W Duty Cycle, D = t/ t2 Single Pulse......, t, PULSE DURTION TIMES (sec) Fig. 24 Transient Thermal Resistance D =.9 DMC238LVT 8 of September 23
DMC238LVT Package Outline Dimensions Please see P22 at http:///datasheets/ap22.pdf for latest version. E 2 e D e 6x b E 4x L c L2 TSOT26 Dim Min Max Typ... 2.84.9 D 2.85 2.95 2.9 E 2.7 2.9 2.8 E.55.65.6 b.3.45 c.2.2 e BSC BSC.95 e BSC BSC.9 L.3.5 L2 BSC BSC.25 θ 8 4 θ 4 2 ll Dimensions in mm Suggested Pad Layout Please see P2 at http:///datasheets/ap2.pdf for the latest version. C C Y Y (6x) Dimensions Value (in mm) C.95 X.7 Y. Y 3.99 X (6x) DMC238LVT 9 of September 23
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