NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage High CurrentGain Bandwidth Product Epoxy Meets UL 9 V @.25 in NJV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; ECQ Qualified and PPP Capable These Devices are PbFree and are RoHS Compliant MXIMUM RTINGS Rating Symbol Value Unit CollectorBase Voltage V CB 5 CollectorEmitter Voltage V CEO 5 EmitterBase Voltage V EB 5 Collector Current Continuous I C 2 dc Collector Current Peak I CM dc Base Current I B. dc Total Device Dissipation @ T C = Derate above Total Device Dissipation @ T = * Derate above Operating and Storage Junction Temperature Range P D 5. P D.68. W W/ C W W/ C T J, T stg 65 to +75 C ESD Human Body Model HBM B V ESD Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SILICON POWER TRNSISTORS 2 MPERES 5 VOLTS 5 WTTS BSE Y WW G COLLECTOR 2, EMITTER 2 CSE 69C STYLE MRKING DIGRM YWW J 287G = ssembly Location = Year = Work Week = PbFree Device ORDERING INFORMTION NJD287TG Device Package Shipping NJVNJD287TG (PbFree) (PbFree) 2,5 Units / Reel 2,5 Units / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 2 ugust, 2 Rev. 5 Publication Order Number: NJD287T/D
THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoCase Junctiontombient (Note ). These ratings are applicable when surface mounted on the minimum pad sizes recommended. R JC R J 89. C/W ELECTRICL CHRCTERISTICS (T C = unless otherwise noted) OFF CHRCTERISTICS Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 2) (I C = mdc, I B = ) V CEO(sus) 5 Collector Cutoff Current (V CB = 5, I E = ) I CBO ndc Emitter Cutoff Current (V BE = 5, I C = ) I EBO ndc ON CHRCTERISTICS DC Current Gain (Note 2) (I C =.5, V CE = 2 V) (I C = 2 dc, V CE = 2 ) (I C =.75 dc, V CE =.6, C T J 5 C) h FE 2 8 6 6 CollectorEmitter Saturation Voltage (Note 2) (I C =, I B =.5 ) V CE(sat). BaseEmitter Saturation Voltage (Note 2) (I C =, I B =.5 dc) V BE(sat).2 BaseEmitter On Voltage (Note 2) (I C = dc, V CE = 2 ) (I C =.75 dc, V CE =.6, C T J 5 C) V BE(on).2.95 DYNMIC CHRCTERISTICS CurrentGain Bandwidth Product (Note ) (I C = mdc, V CE =, f test = MHz) f T 65 MHz Output Capacitance (V CB =, I E =, f =. MHz) 2. Pulse Test: Pulse Width = s, Duty Cycle 2%.. f T = h fe f test. C ob 8 pf 2
TYPICL CHRCTERISTICS 25 P D, POWER DISSIPTION (WTTS) 2 5 5 25 5 75 25 5 75 2 T, TEMPERTURE ( C) Figure. Power Derating h FE, DC CURRENT GIN 75 C 5 C C C V CE = 2. V.. Figure 2. DC Current Gain V CE(sat), COLLECTOREMITTER STURTION VOLTGE (V)... 75 C 5 C C C Ic/Ib = 2.. Figure. CollectorEmitter Saturation Voltage V BE(sat), BSEEMITTER STURTION VOLTGE (V).2...9.8.7.6.5.. C C 5 C 75 C Ic/Ib = 2.. Figure. BaseEmitter Saturation Voltage V BE(on), BSEEMITTER VOLTGE (V).2...9.8.7.6.5.. V CE = 2. V Figure 5. BaseEmitter Voltage C C 5 C 75 C..
V CE(sat), COLLECTOREMITTER STURTION VOLTGE (V)..8.6. m m 5 m T = I C = 2 C, CPCITNCE (pf) C ibo C obo T =.. I B, BSE CURRENT (m) Figure 6. Saturation Region. V R, REVERSE VOLTGE (V) Figure 7. Capacitance f tau, CURRENT GIN BNDWIDTH PRODUCT (MHz) V CE = V T = I C, COLLECTOR CURRENT (m) Figure 8. Saturation Region I C, COLLECTOR CURRENT ms ms ms S V CE, COLLECTOR EMITTER VOLTGE (V) Figure 9. Capacitance r(t), TRNSIENT THERML RESISTNCE (NORMLIZED).7.5...7.5..2 D =.5..5.2. (SINGLE PULSE) R JC (t) = r(t) JC R JC = C/W MX D CURVES PPLY FOR POWER PULSE TRIN SHOWN RED TIME T t T J(pk) - T C = P (pk) JC (t) P (pk) t t 2 DUTY CYCLE, D = t /t 2..2.5..5 2 5 2 5 2 t, TIME (ms) Figure. Thermal Response
PCKGE DIMENSIONS L L b2 e E b 2 b D B DETIL c.5 (.) M C C c2 H L2 GUGE PLNE L L 6.2 CSE 69C ISSUE D DETIL ROTTED 9 CW SOLDERING FOOTPRINT* 2.58. H..8 C Z SETING PLNE NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.5M, 99. 2. CONTROLLING DIMENSION: INCHES.. THERML PD CONTOUR OPTIONL WITHIN DI- MENSIONS b, L and Z.. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D ND E RE DETERMINED T THE OUTERMOST EXTREMES OF THE PLSTIC BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE H. INCHES MILLIMETERS DIM MIN MX MIN MX.86.9 2.8 2.8..5.. b.25.5.6.89 b2..5.76. b.8 5.57 5.6 c.8.2.6.6 c2.8.2.6.6 D 5 5 5.97 6.22 E 5 65 6.5 6.7 e.9 BSC 2.29 BSC H.7. 9.. L.55.7..78 L.8 REF 2.7 REF L2.2 BSC.5 BSC L.5.5.89.27 L.. Z.55.9 STYLE : PIN. BSE 2. COLLECTOR. EMITTER. COLLECTOR 5.8 28.6.6 6.72 SCLE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 US Phone: 675275 or 886 Toll Free US/Canada Fax: 675276 or 8867 Toll Free US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 82829855 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 2 79 29 Japan Customer Focus Center Phone: 85875 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJD287T/D