Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon Germanium technology Ideal for CDMA and WLAN applications Collector design provides high linearity of 14. dbm OP1dB for low voltage application Maximum stable gain G ms = 21. db at 1.8 GHz G ma = 11 db at 6 GHz Outstanding noise figure NF min =.7 db at 1.8 GHz Outstanding noise figure NF min = 1. db at 6 GHz Accurate SPICE GP model enables effective design in process Pbfree (RoHS compliant) and halogenfree package with visible leads Qualification report according to AECQ1 available 4 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP62 R2s 1=B 2=E =C 4=E SOT4 1 2191
Maximum Ratings at T A = 2 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage T A = 2 C T A = C V CEO V 2. 2.1 Collectoremitter voltage V CES 7. Collectorbase voltage V CBO 7. Emitterbase voltage V EBO 1.2 Collector current I C 8 ma Base current I B Total power dissipation 1) P tot 18 mw T S 9 C Junction temperature T J 1 C Ambient temperature T A 6... 1 Storage temperature T Stg 6... 1 Thermal Resistance Parameter Symbol Value Unit Junction soldering point 2) R thjs K/W Electrical Characteristics at T A = 2 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = 1 ma, I B = V (BR)CEO 2. 2.8 V Collectoremitter cutoff current V CE = 7. V, V BE = V CE = V, V BE = Collectorbase cutoff current V CB = V, I E = Emitterbase cutoff current V EB =. V, I C = DC current gain I C = ma, V CE = 1. V, pulse measured I CES µa.1.4 I CBO 1 4 na I EBO 9 h FE 1 18 27 1 T S is measured on the emitter lead at the soldering point to the pcb 2 For the definition of R thjs please refer to Application Note AN77 (Thermal Resistance Calculation) 2 2191
Electrical Characteristics at T A = 2 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 6 GHz I C = ma, V CE = 1. V, f = 1 GHz Collectorbase capacitance V CB = 2 V, f = 1 MHz, V BE =, emitter grounded C cb.12.2 pf Collector emitter capacitance V CE = 2 V, f = 1 MHz, V BE =, base grounded Emitterbase capacitance V EB =. V, f = 1 MHz, V CB =, collector grounded Minimum noise figure I C = ma, V CE = 1. V, f = 1.8 GHz, Z S = Z Sopt I C = ma, V CE = 1. V, f = 6 GHz, Z S = Z Sopt Power gain, maximum stable 1) I C = ma, V CE = 1. V, Z S = Z Sopt, Z L = Z Lopt, f = 1.8 GHz Power gain, maximum available 1) I C = ma, V CE = 1. V, Z S = Z Sopt, Z L = Z Lopt, f = 6 GHz Transducer gain I C = ma, V CE = 1. V, Z S = Z L = Ω, f = 1.8 GHz f = 6 GHz Third order intercept point at output 2) V CE = 2 V, I C = ma, Z S =Z L = Ω, f = 1.8 GHz 1dB compression point at output I C = ma, V CE = 2 V, Z S =Z L = Ω, f = 1.8 GHz C ce.22 C eb.46 NF min.7 1. db G ms 21. db G ma 11 db S 21e 2 2 9. db IP 2. dbm P 1dB 14. 1 G ma = S 21e / S 12e (k(k²1) 1/2 ), G ms = S 21e / S 12e 2 IP value depends on termination of all intermodulation frequency components. Termination used for this measurement is Ω from.1 MHz to 6 GHz 2191
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 2 mw 16 K/W Ptot 14 12 8 6 RthJS 2 D =..2.1..2.1. 4 2 2 4 6 8 12 C 1 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 1 7 6 4 2 C Collectorbase capacitance C cb = ƒ(v CB ) f = 1MHz t p 1.4 pf Ptotmax/ PtotDC D =.,1,2,,1,2, CCB..2.2.1.1. 7 6 4 2 C 1 2 4 V 7 t p V CB 4 2191
Third order Intercept Point IP =ƒ(i C ) (Output, Z S = Z L = Ω) V CE = parameter, f = 9 MHz Third order Intercept Point IP = ƒ (I C ) (Output, Z S = Z L = Ω ) V CE = parameter, f = parameter 27 dbm 2.V 21 1.8V IP 18 1 1.V 12 9.8V 6 2 4 6 7 8 ma I C Transition frequency f T = ƒ(i C ) f = 1GHz V CE = Parameter in V 6 GHz Power gain G ma, G ms = ƒ(i C ) V CE = 1.V f = Parameter in GHz db ft 4 4 1. to 2. 1 G 26 24 22.9 1.8 2 18 2.4 2 2 1...8 16 14 12 4 6 2 4 6 7 8 ma I C 8 2 4 6 7 ma 9 I C 2191
Power Gain G ma, G ms = ƒ(f), S 21 ² = f (f) V CE = 1.V, I C = ma db 4 Power gain G ma, G ms = ƒ (V CE ) I C = ma f = Parameter in GHz db.9 1.8 4 2 2.4 G G 1 4 6 2 Gms 2 S21 ² Gma 1 1 2 4 GHz 6 f Minimum noise figure NF min = ƒ (I C ) V CE = 2 V, Z S = Z Sopt.2.6 1 1.4 1.8 V 2.6 V CE Minimum noise figure NF min = ƒ(f) V CE = 2V, Z S = Z Sopt 6 2191
Source impedance for min. noise figure vs. frequency V CE = 2 V, I C = 6 ma / ma 7 2191
SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the Sparameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP62 SPICE GP model in the internet in MWO and ADSformat, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 1 GHz using typical devices. The BFP62 SPICE GP model reflects the typical DC and RFperformance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all Sparameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 2191
Package SOT4 BFP62 9 2191
Edition 291116 Published by Infineon Technologies AG 81726 Munich, Germany 29 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2191