l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l Lead-Free Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device. IRF60PbF HEXFET Power MOSFET V DSS R DS(on) max I D -20V 0.065Ω@V GS = -4.5V -5.A 0.095Ω@V GS = -2.5V -4.A G D S PD - 9602B FlipFET ISOMETRIC The FlipFET package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than.8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -20 V I D @ T A = 25 C Continuous Drain Current, V GS @ 4.5V ±5. I D @ T A = 70 C Continuous Drain Current, V GS @ 4.5V ±3.5 A I DM Pulsed Drain Current ±35 P D @T A = 25 C Power Dissipationƒ 2.2 P D @T A = 70 C Power Dissipationƒ.4 W Linear Derating Factor 7 mw/ C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambientƒ 56.5 C/W R θj-pcb Junction-to-PCB mounted 35 www.irf.com 05/7/06
IRF60PbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -20 V V GS = 0V, I D = -250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient -0.0 V/ C Reference to 25 C, I D = -ma R 0.065 V GS = -4.5V, I D = -5.A DS(on) Static Drain-to-Source On-Resistance Ω 0.095 V GS = -2.5V, I D = -4.A V GS(th) Gate Threshold Voltage -0.45 -.2 V V DS = V GS, I D = -250µA g fs Forward Transconductance 9.8 S V DS = -V, I D = -5.A I -.0 V µa DS = -20V, V GS = 0V DSS Drain-to-Source Leakage Current -25 V DS = -6V, V GS = 0V, T J = 25 C I Gate-to-Source Forward Leakage 0 V GS = 2V GSS na Gate-to-Source Reverse Leakage -0 V GS = -2V Q g Total Gate Charge 4 2 I D = -5.A Q gs Gate-to-Source Charge.9 2.9 nc V DS = -6V Q gd Gate-to-Drain ("Miller") Charge 5.0 7.5 V GS = -5.0V t d(on) Turn-On Delay Time 2 V DD = -V t r Rise Time 2 I D = -.0A ns t d(off) Turn-Off Delay Time 50 R G = 5.8Ω t f Fall Time 50 V GS = -4.5V C iss Input Capacitance 230 V GS = 0V C oss Output Capacitance 250 pf V DS = -5V C rss Reverse Transfer Capacitance 80 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.2 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -33 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -2.2A, V GS = 0V t rr Reverse Recovery Time 48 72 ns T J = 25 C, I F = -2.2A Q rr Reverse RecoveryCharge 34 5 nc di/dt = 0A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on inch square 2oz copper on FR-4. Pulse width 400µs; duty cycle 2%. 2 www.irf.com
IRF60PbF -I D, Drain-to-Source Current (A) 0 0. VGS TOP -7.00V -5.00V -4.50V -2.50V -.80V -.50V -.20V BOTTOM -.00V -.00V 20µs PULSE WIDTH 0.0 T J = 25 C 0. 0 -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -7.00V -5.00V -4.50V -2.50V -.80V -.50V -.20V BOTTOM-.00V -.00V 20µs PULSE WIDTH 0. T J = 50 C 0. 0 -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 50 C V DS= -5V 20µs PULSE WIDTH.0.5 2.0 2.5 3.0 -V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -5.A.5.0 0.5 V GS= -4.5V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
IRF60PbF C, Capacitance (pf) 2000 600 200 800 400 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Voltage (V) 8 6 4 2 I D = -5.A V DS =-6V 0 0 -V DS, Drain-to-Source Voltage (V) 0 0 4 8 2 6 20 24 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V 0. 0.0 0.4 0.8.2.6 2.0 2.4 -V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Single Pulse 0. 0. 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
IRF60PbF 6.0 V DS R D -I D, Drain Current (A) 5.0 4.0 3.0 2.0.0 0.0 25 50 75 0 25 50 T C, Case Temperature ( C) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % + - Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) D = 0.50 0.20 0. 0.05 0.02 PDM 0.0 t SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J =P DM x Z thja + TA 0. 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R DS (on), Drain-to-Source On Resistance (Ω) IRF60PbF 0.08 0.6 0.07 R DS(on), Drain-to -Source On Resistance (Ω) 0.06 0.2 0.05 0.04 I D = -5.A 0.08 V GS = -2.5V V GS = -4.5V 0.03.0 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) 0.04 0 20 30 40 -I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
-V GS(th) Gate threshold Voltage (V) Power Dissipation (W) IRF60PbF. 20.0 6 0.9 0.8 I D = -250µA 2 0.7 8 0.6 0.5 4 0.4-75 -50-25 0 25 50 75 0 25 50 T J, Temperature ( C ) 0 0.00 0.0 0.0.000.000 Pulsewidth (sec) Fig 5. Threshold Voltage Vs. Temperature Fig 6. Maximum Power Dissipation Vs. Time FlipFET Part Marking Information www.irf.com 7
IRF60PbF FlipFET Outline Dimension and Tape and Reel (Refer to application note AN- for details about board mounting the 0.8mm ball pitch Flip FET) 27(6 ',0(6,2,* 72/(5$&,*3(5$60(<0 &2752//,*',0(6,2,//,0(7(5 ',0(6,26$5(6+2:,,//,0(7(56>,&+(6@ % & ; $ & & ; ; %$//$66,*(76 6285&( '5$, '5$, *$7( ; & /($')5((62/'(5 %$//&20326,7,2 6Q $J &X 6RXUFH %DOO 'UDLQ %DOO *DWH %DOO 'UDLQ %DOO PP %$// /2&$7,2 ; PP 5(&200('(')22735,7 PP )(('',5(&7,2 27(6 7$3($'5((/287/,(&2)250672(,$ (,$ Tape and Reel Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.05/06 8 www.irf.com