IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C VTRENCHSTOP TM IGBT6technologyoffering: Highefficiencyinhardswitchingandresonanttopologies Easyparallelingcapabilityduetopositivetemperature coefficientinvcesat LowEMI LowGateChargeQg Verysoft,fastrecoveryfullcurrentantiparalleldiode Maximumjunctiontemperature75 C Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: IndustrialUPS Charger Energystorage ThreelevelSolarStringInverter Welding G C E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec7// KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=5 C Tvjmax Marking Package IKWNCS6 V A.85V 75 C KMCS6 PGTO73 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V. www.infineon.com
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries TableofContents Description........................................................................ Table of Contents................................................................... Maximum Ratings................................................................... 3 Thermal Resistance................................................................. 3 Electrical Characteristics.............................................................. Electrical Characteristics Diagrams..................................................... 6 Package Drawing...................................................................3 Testing Conditions.................................................................. Revision History....................................................................5 Disclaimer.........................................................................6 V.
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 5 C VCE V DCcollectorcurrent,limitedbyTvjmax Tc=5 C Tc= C IC 8.. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 6. A TurnoffsafeoperatingareaVCE V,Tvj 75 C 6. A Diodeforwardcurrent,limitedbyTvjmax Tc=5 C Tc= C IF 8.. Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 6. A Gateemitter voltage TransientGateemittervoltage(tp.5µs,D<.) Short circuit withstand time VGE=5.V,VCC 5V Allowed number of short circuits < Time between short circuits:.s Tvj=5 C PowerdissipationTc=5 C PowerdissipationTc= C VGE tsc Ptot ± 5 3 5. 5. Operating junction temperature Tvj...+75 C Storage temperature Tstg 55...+5 C Soldering temperature, wave soldering.6mm (.63in.) from case for s 6 Mounting torque, M3 screw Maximum of mounting processes: 3 A A V µs W C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).3 K/W Rth(jc).78 K/W Rth(ja) K/W 3 V.
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries ElectricalCharacteristic,atTvj=5 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=.A Tvj=5 C Tvj=5 C Tvj=75 C VGE=V,IF=.A Tvj=5 C Tvj=75 C Gateemitter threshold voltage VGE(th) IC=.9mA,VCE=VGE 5. 5.7 6.3 V Zero gate voltage collector current ICES VCE=V,VGE=V Tvj=5 C Tvj=75 C.85.5.5..5 6 Gateemitter leakage current IGES VCE=V,VGE=V 6 na Transconductance gfs VCE=V,IC=.A 3. S.5.55 85 V V µa ElectricalCharacteristic,atTvj=5 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 7 Output capacitance Coes VCE=5V,VGE=V,f=MHz 85 Reverse transfer capacitance Cres Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=96V,IC=.A, VGE=5V pf 85. nc LE 3. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=5 C Turnon delay time td(on) Tvj=5 C, 7 ns Rise time VCC=6V,IC=.A, tr 39 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=9.Ω,RG(off)=9.Ω, 35 ns Fall time Lσ=7nH,Cσ=67pF tf 7 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.55 mj Turnoff energy Eoff diode reverse recovery..55 mj Total switching energy Ets. mj V.
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries DiodeCharacteristic,atTvj=5 C Diode reverse recovery time trr Tvj=5 C, ns Diode reverse recovery charge VR=6V, Qrr.65 µc IF=.A, Diode peak reverse recovery current Irrm dif/dt=7a/µs, 8. A Diode peak rate of fall of reverse Lσ=7nH, dirr/dt Cσ=67pF 65 A/µs recoverycurrentduringtb SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=75 C Turnon delay time td(on) Tvj=75 C, 7 ns Rise time VCC=6V,IC=.A, tr 38 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=9.Ω,RG(off)=9.Ω, 39 ns Fall time Lσ=7nH,Cσ=67pF tf 55 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 3.5 mj Turnoff energy Eoff diode reverse recovery..95 mj Total switching energy Ets 6.5 mj DiodeCharacteristic,atTvj=75 C Diode reverse recovery time trr Tvj=75 C, 7 ns Diode reverse recovery charge VR=6V, Qrr 6. µc IF=.A, Diode peak reverse recovery current Irrm dif/dt=8a/µs, 7. A Diode peak rate of fall of reverse Lσ=7nH, dirr/dt Cσ=67pF 7 A/µs recoverycurrentduringtb 5 V.
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries not for linear use 6 VGE=V 7V 5V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 6 3V V 9V 7V. VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,Tvj 75 C;VGE=5V,pulsewidth limitedbytvjmax) 3 5 VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Typicaloutputcharacteristic (Tvj=5 C) 6 VGE=V 7V 6 Tvj = 5 C Tvj = 75 C 5V IC,COLLECTORCURRENT[A] 8 6 3V V 9V 7V IC,COLLECTORCURRENT[A] 8 6 3 5 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=75 C) 6 8 VGE,GATEEMITTERVOLTAGE[V] Figure. Typicaltransfercharacteristic (VCE=V) 6 V.
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries VCEsat,COLLECTOREMITTERSATURATION[V] 3.5 3..5..5. IC = A IC = A IC = 8A t,switchingtimes[ns] td(off) tf td(on) tr.5 5 5 75 5 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 5. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=5V) 3 5 6 7 8 IC,COLLECTORCURRENT[A] Figure 6. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,RG=9Ω,Dynamictestcircuitin Figure E) td(off) tf td(on) tr t,switchingtimes[ns] t,switchingtimes[ns] td(off) tf td(on) tr 5 5 5 3 35 RG,GATERESISTOR[Ω] Figure 7. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,IC=A,Dynamictestcircuitin 5 5 75 5 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=6v,vge=/5v, IC=A,RG=9Ω,DynamictestcircuitinFigure Figure E) 7 E) V.
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] 7. 6.5 6. 5.5 5..5. 3.5 typ. min. max. E,SWITCHINGENERGYLOSSES[mJ] 6 8 6 Eoff Eon Ets 3. 5 5 75 5 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure 9. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=.9mA) 3 5 6 7 8 IC,COLLECTORCURRENT[A] Figure. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,RG=9Ω,Dynamictestcircuitin Figure E) 7 Eoff Eoff Eon Eon Ets 6 Ets E,SWITCHINGENERGYLOSSES[mJ] 8 6 E,SWITCHINGENERGYLOSSES[mJ] 5 3 5 5 5 3 35 RG,GATERESISTOR[Ω] Figure. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tvj=75 C,VCE=6V, VGE=/5V,IC=A,Dynamictestcircuitin 5 5 75 5 5 75 Tvj,JUNCTIONTEMPERATURE[ C] Figure. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=6v,vge=/5v, IC=A,RG=9Ω,Dynamictestcircuitin Figure E) 8 Figure E) V.
IKWNCS6 Sixth generation, high speed soft switching series 9 Eoff Eon Ets 8 Tvj = 5 C Tvj = 75 C dif/dt, DIODE CURRENT SLOPE [A/µs] E, SWITCHING ENERGY LOSSES [mj] 7 6 5 3 8 6 5 5 55 6 65 7 75 8 5 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj=75 C, VGE=/5V, IC=A, RG=9Ω, Dynamic test circuit in Figure E) 5 3 35 Figure. Typical diode current slope as a function of gate resistor (inductive load, VCE=6V, VGE=/5V, IC=A, Dynamic test circuit in Figure E) 6 E+ VCC = V VCC = 96V Cies Coes Cres C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] 5 RG, GATE RESISTOR [Ω] 8 6 5 5 5 3 QGE, GATE CHARGE [nc] Figure 5. Typical gate charge (IC=A) 5 5 5 3 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 6. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) 9 V.
IKWNCS6 Sixth generation, high speed soft switching series 6. 5.5 tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] 3 75 5 5 75 5..5. 3.5 3..5 5..5 3. 3.5..5.. 5. VGE, GATEEMITTER VOLTAGE [V].5 3. 3.5..5 5. VGE, GATEEMITTER VOLTAGE [V] Figure 7. Typical short circuit collector current as a function of gateemitter voltage (VCE 5V, Tvj 75 C) Figure 8. Short circuit withstand time as a function of gateemitter voltage (VCE 5V, start at Tvj 75 C) Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W]. D =.5...5... single pulse. D =.5....5... single pulse. i: 3 5 6 ri[k/w]: 9.E.568.79.7338 8.E3.6E3 τi[s]:.5e5 3.E 3.E3.6587.7.9989 E E6 E5 E... i: 3 5 ri[k/w]:.765.986.9355..e3 τi[s]: 3.E.8E3.58.937.6 E E6 tp, PULSE WIDTH [s] Figure 9. IGBT transient thermal resistance (D=tp/T) E5 E... tp, PULSE WIDTH [s] Figure. Diode transient thermal impedance as a function of pulse width (D=tp/T) V.
IKWNCS6 Sixth generation, high speed soft switching series Tvj = 5 C, IF = A Tvj = 75 C, IF = A Tvj = 5 C, IF = A Tvj = 75 C, IF = A 7 Qrr, REVERSE RECOVERY CHARGE [µc] trr, REVERSE RECOVERY TIME [ns] 9 8 7 6 5 6 5 3 3 6 8 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure. Typical reverse recovery time as a function of diode current slope (VR=6V) 6 8 Figure. Typical reverse recovery charge as a function of diode current slope (VR=6V) 3 Tvj = 5 C, IF = A Tvj = 75 C, IF = A dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] dif/dt, DIODE CURRENT SLOPE [A/µs] 5 5 Tvj = 5 C, IF = A Tvj = 75 C, IF = A 3 5 6 7 8 9 6 8 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 3. Typical reverse recovery current as a function of diode current slope (VR=6V) 6 8 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=6V) V.
IKWNCS6 Sixth generation, high speed soft switching series. 6 Tvj = 5 C Tvj = 75 C 3.5 3. IF, FORWARD CURRENT [A] Erec, SWITCHING ENERGY LOSSES [mj] Tj=5 C, IF = A Tj=75 C, IF = A.5..5 8 6..5. 6 8 dif/dt, DIODE CURRENT SLOPE [A/µs] 3 5 VF, FORWARD VOLTAGE [V] Figure 5. Typical reverse energy losses as a function of diode current slope (VR=6V) Figure 6. Typical diode forward current as a function of forward voltage 3.5 IF = A IF = A IF = 8A VF, FORWARD VOLTAGE [V] 3..5..5. 5 5 75 5 5 75 Tvj, JUNCTION TEMPERATURE [ C] Figure 7. Typical diode forward voltage as a function of junction temperature V.
IKWNCS6 Sixth generation, high speed soft switching series Package Drawing PGTO73 3 V.
IKWNCS6 Sixth generation, high speed soft switching series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC % IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t E off = t VCE x IC x dt E t t on = VCE x IC x d t % VCE t3 t t3 t t Figure B. V.
IKWNCS6 Sixth generation, high speed soft switching series Revision History IKWNCS6 Revision:, Rev.. Previous Revision Revision Date Subjects (major changes since last revision). Final data sheet 5 V.
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