4V Drive Pch MOSFET RPH65SP Structure Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Single) Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). (6) (5) (4) () (2) (3) Application Switching Packaging specifications Inner circuit Type Package Code Taping TR (6) (5) (4) Basic ordering unit (pieces) RPH65SP 2 Absolute maximum ratings (T a = 25 C) Symbol Limits Unit Drain-source voltage V DSS 45 V Gate-source voltage V GSS 2 V Drain current Continuous I D 6.5 A Pulsed I DP * 26 A Source current Continuous I S.6 A (Body Diode) Pulsed I SP * 26 A Power dissipation P D *2 2. W Channel temperature Tch 5 C Range of storage temperature Tstg 55 to 5 C * Pw s, Duty cycle % *2 Mounted on a ceramic board. () Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain () (2) (3) ESD PROTECTION DIODE 2 BODY DIODE Thermal resistance Symbol Limits Unit Channel to Ambient R th (ch-a) * 62.5 C / W *Mounted on a ceramic board. 2 ROHM Co., Ltd. All rights reserved. /6 2.8 - Rev.A
RPH65SP Electrical characteristics (T a = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS - - A V GS = 2V, V DS =V Drain-source breakdown voltage V (BR)DSS 45 - - V I D = ma, V GS =V Zero gate voltage drain current I DSS - - A V DS = 45V, V GS =V Gate threshold voltage V GS (th). - 3. V V DS = V, I D = ma Input capacitance C iss - 32 - pf V DS = V Output capacitance C oss - 4 - pf V GS =V Reverse transfer capacitance C rss - 24 - pf f=mhz Turn-on delay time t d(on) * - 9 - ns I D = 3.25A, V DD 25V Rise time t r * - 27 - ns V GS = V Turn-off delay time t d(off) * - 2 - ns R L =7.7 Fall time t f * - 58 - ns R G = Total gate charge Q g * - 28 - nc I D = 6.5A, V DD 25V Gate-source charge Q gs * - 7 - nc V GS = 5V Gate-drain charge Q gd * - 9 - nc *Pulsed Conditions - 22 3 I D = 6.5A, V GS = V Static drain-source on-state * R - 3 42 m I D = 6.5A, V GS = 4.5V resistance DS (on) - 33 46 I D = 6.5A, V GS = 4.V Forward transfer admittance l Y fs l * 9 - - S I D = 6.5A, V DS = V Body diode characteristics (Source-Drain) (T a = 25 C) Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * - -.2 V I s = 6.5A, V GS =V *Pulsed 2 ROHM Co., Ltd. All rights reserved. 2/6 2.8 - Rev.A
RPH65SP Electrical characteristic curves (Ta=25 C) Fig. Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 3 2 9 8 7 6 5 4 V GS =-V V GS =-4.V V GS =-3.V 3 2 9 8 7 6 5 4 V GS =-.V V GS =-4.V V GS =-3.V 3 3 2 V GS =-2.5V.2.4.6.8 2 V GS =-2.5V 2 3 4 5 6 7 8 9 Drain-Source Voltage : -V DS [V] Drain-Source Voltage : -V DS [V] Fig.3 vs. Drain Current Fig.4 vs. Drain Current V GS =-4.V V GS =-V V GS =-V T a =25 C.... Fig.5 vs. Drain Current FIg.6 vs. Drain Current T a =25 C V GS =-4V T a =25 C.... 2 ROHM Co., Ltd. All rights reserved. 3/6 2.8 - Rev.A
RPH65SP Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics V DS =-V V DS =-V Forward Transfer Admittance Y fs [S] T a =25 C Drain Currnt : -I D [A]... T a =25 C......5..5 2. 2.5 3. Gate-Source Voltage : -V GS [V] Fig.9 Source Current vs. Source-Drain Voltage Fig. vs. Gate-Source Voltage Source Current : -I s [A]... V GS =V T a =25 C 9 8 7 6 5 4 3 2 I D =-3.25A I D =-6.5A...5. Source-Drain Voltage : -V SD [V] 2 4 6 8 2 4 6 8 2 Gate-Source Voltage : -V GS [V] Fig. Switching Characteristics Fig.2 Dynamic Input Characteristics Switching Time : t [ns] t f t d(off) t d(on) t r V DD -25V V GS =-V R G =Ω Pulsed Gate-Source Voltage : -V GS [V] 9 8 7 6 5 4 3 2 V DD =-25V I D =-6.5A Pulsed.. 5 5 2 25 3 35 4 45 5 55 6 Total Gate Charge : Q g [nc] 2 ROHM Co., Ltd. All rights reserved. 4/6 2.8 - Rev.A
RPH65SP Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Area f=mhz V GS =V C iss Operation in this area is limited by R DS(on) (V GS = -V) P W = μs Capacitance : C [pf] C oss C rss.. Drain Current : -I D [ A ] P W = ms P W = ms. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm) DC Operation.. Drain-Source Voltage : -V DS [V] Drain-Source Voltage : -V DS [ V ] Fig.5 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r(t).. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm) Rth (ch-a) =62.5 C/W Rth (ch-a) (t)=r(t) Rth (ch-a)..... Pulse width : Pw (s) 2 ROHM Co., Ltd. All rights reserved. 5/6 2.8 - Rev.A
RPH65SP Measurement circuits Pulse width ID RL VDS % 5% 9% 5% D.U.T. % % RG VDD VDS td(on) 9% 9% tr td(off) tf ton toff Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms VG ID VDS Qg IG(Const.) D.U.T. RL Qgs Qgd VDD Charge Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 2 ROHM Co., Ltd. All rights reserved. 6/6 2.8 - Rev.A
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