Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. 35mW - 12V SiC Cascode UF3C124K4S 1 2 34 CASE G (4) KS (3) CASE D (1) S (2) Features Typical Applications Typical on-resistance R DS(on),typ of 35mW EV charging Maximum operating temperature of 175 C PV inverters Excellent reverse recovery Switch mode power supplies Low gate charge Power factor correction modules Low intrinsic capacitance Motor drives ESD protected, HBM class 2 Induction heating TO-247-4L package for faster switching, clean gate waveforms Maximum Ratings Drain-source voltage Gate-source voltage Parameter Continuous drain current 1 Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8 from case for 5 seconds 1 Limited by T J,max 2 Pulse width t p limited by T J,max 3 Starting T J = 25 C Symbol V DS V GS I DM E AS P tot Test Conditions DC T C =25 C T C =1 C Pulsed drain current 2 T C =25 C 175 Single pulsed avalanche energy 3 L=15mH, I AS =4.2A Power dissipation I D T C =25 C Part Number Package Marking UF3C124K4S TO-247-4L UF3C124K4S 12-25 to +25 T J,max 175 C T J, T STG -55 to 175 C T L 25 C 65 47 132.3 429 V V A A A mj W Preliminary, March 218 1 For more information go to www.unitedsic.com.
Electrical Characteristics (T J = +25 C unless otherwise specified) Typical Performance - Static 35mW - 12V SiC Cascode UF3C124K4S Parameter Symbol Test Conditions Min Typ Max Drain-source breakdown voltage BV DS V GS =V, I D =1mA 12 V Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance V DS =12V, 8 15 V GS =V, T J =25 C I DSS ma V DS =12V, 35 V GS =V, T J =175 C V DS =V, T j =25 C, I GSS 6 2 ma V GS =-2V / +2V R DS(on) V GS =12V, I D =4A, T J =25 C V GS =12V, I D =4A, T J =175 C 35 45 V G(th) V DS =5V, I D =1mA 4 5 6 V R G f=1mhz, open drain 4.5 W 73 mw Typical Performance - Reverse Diode Diode continuous forward current 1 Diode pulse current 2 Forward voltage Parameter Symbol Test Conditions Min Typ Max I S T C =25 C 65 A I S,pulse T C =25 C 175 A V FSD V GS =V, I F =2A, T J =25 C V GS =V, I F =2A, T J =175 C 1.5 2 1.95 V Reverse recovery charge Reverse recovery time Reverse recovery charge Reverse recovery time Q rr V R =8V, I F =4A, V GS =-5V,R G_EXT =1W 358 nc di/dt=24a/ms, t rr T J =25 C 25 ns Q rr V R =8V, I F =4A, V GS =-5V,R G_EXT =1W 259 nc di/dt=24a/ms, t rr T J =15 C 22 ns Preliminary, March 218 2 For more information go to www.unitedsic.com.
35mW - 12V SiC Cascode UF3C124K4S Typical Performance - Dynamic Parameter symbol Test Conditions Min Typ Max Input capacitance C iss V DS =1V, 15 Output capacitance C oss V GS =V, 21 pf Reverse transfer capacitance C rss f=1khz 1.7 Effective output capacitance, energy related C oss(er) V DS =V to 8V, V GS =V 112 pf Effective output capacitance, time related C oss(tr) V DS =V to 8V, V GS =V 28 pf C OSS stored energy E oss V DS =8V, V GS =V 35.6 mj Total gate charge Q G 51 V Gate-drain charge Q DS =8V, I D =4A, GD 11 V GS =-5V to 15V Gate-source charge Q GS 19 nc Turn-on delay time t d(on) V DS =8V, I D =4A, Gate 24 Rise time t r Driver=-5V to +12V, 27 ns Turn-off delay time t Turn-on R G,EXT =8.5W, d(off) 5 Turn-off R G,EXT =2W Fall time t f 1 Inductive Load, Turn-on energy E ON FWD: same device with 78 Turn-off energy E OFF V GS = -5V, R G = 1W, 195 mj Total switching energy E TOTAL T J =25 C 975 Turn-on delay time t d(on) V DS =8V, I D =4A, Gate 23 Rise time t r Driver=-5V to +12V, 24 t Turn-on R G,EXT =8.5W, ns Turn-off delay time d(off) 5 Turn-off R G,EXT =2W Fall time t f 9 Inductive Load, Turn-on energy E ON FWD: same device with 668 Turn-off energy E OFF V GS = -5V, R G = 1W, 134 mj Total switching energy E TOTAL T J =15 C 82 Thermal Characteristics Parameter symbol Test Conditions Min Typ Max Thermal resistance, junction-to-case R qjc.27.35 C/W Preliminary, March 218 3 For more information go to www.unitedsic.com.
On Resistance, R DS_ON (P.U.) Typical Performance Diagrams 35mW - 12V SiC Cascode UF3C124K4S 12 12 1 1 8 6 4 2 Vgs = 15V Vgs = 1V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 8 6 4 2 Vgs = 15V Vgs = 1V Vgs = 7V Vgs = 6.5V Vgs = 6V 1 2 3 4 5 6 7 8 9 1 1 2 3 4 5 6 7 8 9 1 Figure 1 Typical output characteristics at T J = - 55 C, tp < 25 m s Figure 2 Typical output characteristics at T J = 25 C, tp < 25 m s 12 1 8 Vgs = 15V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V 2.5 2. 1.5 6 4 1. 2.5 1 2 3 4 5 6 7 8 9 1. -75-5 -25 25 5 75 1 125 15 175 Junction Temperature, T J ( C) Figure 3 Typical output characteristics at T J = 175 C, tp < 25 m s Figure 4 Normalized on-resistance vs. temperature at V GS = 12V and I D = 4A Preliminary, March 218 4 For more information go to www.unitedsic.com.
Threshold Voltage, V th (V) Gate-Source Voltage, V GS (V) On-Resistance, R DS(on) (mw) 35mW - 12V SiC Cascode UF3C124K4S 15 12 125 1 Tj = 175 C Tj = 25 C Tj = - 55 C 1 8 Tj = -55 C Tj = 25 C Tj = 175 C 75 6 5 4 25 2 2 4 6 8 1 12 1 2 3 4 5 6 7 8 9 1 Gate-Source Voltage, V GS (V) Figure 5 Typical drain-source on-resistance at V GS = 12V Figure 6 Typical transfer characteristics at V DS = 5V 6 2 5 15 4 3 1 2 5 1-1 -5 5 1 15 2 Junction Temperature, T J ( C) -5 1 2 3 4 5 6 Gate Charge, Q G (nc) Figure 7 Threshold voltage vs. T J Figure 8 Typical gate charge at V DS = 5V and I D = 1mA at V DS = 8V and I D = 4A Preliminary, March 218 5 For more information go to www.unitedsic.com.
E OSS (mj) 35mW - 12V SiC Cascode UF3C124K4S -1-2 Vgs = -5V Vgs = V Vgs = 5V -1-2 Vgs = - 5V Vgs = V Vgs = 5V -3-3 -4-4 -5-5 -6-4 -3-2 -1-6 -4-3 -2-1 Figure 9 3rd quadrant characteristics Figure 1 3rd quadrant characteristics at T J = - 55 C at T J = 25 C 8-1 7-2 6 5-3 -4-5 Vgs = - 5V Vgs = V Vgs = 5V 4 3 2 1-6 -4-3 -2-1 2 4 6 8 1 12 Figure 11 3rd quadrant characteristics at T J = 175 C Figure 12 Typical stored energy in C OSS at V GS = V Preliminary, March 218 6 For more information go to www.unitedsic.com.
Power Dissipation, P tot (W) Thermal Impedance, Z qjc ( C/W) Capacitance, C (pf) DC 35mW - 12V SiC Cascode UF3C124K4S 1 1 1 1 1 C iss C oss C rss 2 4 6 8 1 12 7 6 5 4 3 2 1-75 -5-25 25 5 75 1 125 15 175 Case Temperature, T C ( C) Figure 13 Typical capacitances at 1kHz and V GS = V Figure 14 DC drain current derating 5 1 4 3 2 1-75 -5-25 25 5 75 1 125 15 175 Case Temperature, T C ( C) Figure 15 Total power dissipation.1.1 D =.5 D =.3 D =.1 D =.5 D =.2 D =.1 Single Pulse.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Pulse Time, t p (s) Figure 16 Maximum transient thermal impedance Preliminary, March 218 7 For more information go to www.unitedsic.com.
Turn-on Energy, Eon (mj) Turn-Off Energy, Eoff (mj) Switching Energy (mj) 35mW - 12V SiC Cascode UF3C124K4S 1 1 1 DC 1ms 1ms 1ms 1ms 1ms 12 1 8 6 4 2 V DD = 8V, V GS = -5V/12V R G_ON = 8.5W, R G_OFF = 2W FWD: same device with V GS = -5V, R G = 1W Etot Eon Eoff.1 1 1 1 1 1 2 3 4 5 Figure 17 Safe operation area Figure 18 Clamped inductive switching energy T c = 25 C, D =, Parameter t p vs. drain current at T J = 25 C 9 45 8 4 7 35 6 3 5 25 4 3 2 1 V DD = 8V, V GS = -5V/12V I D = 4A, T J = 25 C FWD: same device with V GS = -5V, R G = 1W 2 15 1 5 V DD = 8V, V GS = -5V/12V I D = 4A, T J = 25 C FWD: same device with V GS = -5V, R G = 1W 5 1 15 2 Total External R G, R G,EXT_ON (W) 2 4 6 8 1 Total External R G, R G,EXT_OFF (W) Figure 19 Clamped inductive switching Figure 2 Clamped inductive switching turn-on energy vs. R G,EXT_ON turn-off energy vs. R G,EXT_OFF Preliminary, March 218 8 For more information go to www.unitedsic.com.
Switching Energy (mj) Qrr (nc) 35mW - 12V SiC Cascode UF3C124K4S 1 4 9 8 7 6 5 4 3 2 1 Etot Eon Eoff V DD = 8V, V GS = -5V/12V R G_ON = 8.5W, R G_OFF = 2W FWD: same device with V GS = -5V, R G = 1W 25 5 75 1 125 15 175 Junction Temperature, T J ( C) 35 3 25 2 15 1 5 V DD = 8V, I S = 4A, di/dt = 24A/ms, V GS = -5V, R G =1W 25 5 75 1 125 15 175 Junction Temperature, T J ( C) Figure 21 Clamped inductive switching energy Figure 22 Reverse recovery charge Qrr vs. vs. junction temperature at I D = 4A junction temperture Applications Information SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low on-resistance (R DS(on) ), output capacitance (Coss), gate charge (Qg), and reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the cascode is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on cascode operation, see www.unitedsic.com. Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Preliminary, March 218 9 For more information go to www.unitedsic.com.