TLE206x, TLE206xA, TLE206xB, TLE206xY EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE

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1 2 Bandwidth (2 MHz) of the TL6x and TL3x Operational Amplifiers Low Supply Current µa/ch Typ On-chip Offset oltage Trimming for Improved DC Performance TLE26x, TLE26xA, TLE26xB, TLE26xY EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 High Output Drive, Specified in 1-Ω Loads Lower Noise Floor Than Earlier Generations of Low-Power BiFETs description The TLE26x series of low-power JFET-input operational amplifiers doubles the bandwidth of the earlier generation TL6x and TL3x BiFET families without significantly increasing power consumption. Texas Instruments Excalibur process also delivers a lower noise floor than the TL6x and TL3x. On-chip zener trimming of offset voltage yields precision grades for dc-coupled applications. The TL26x devices are pin-compatible with other TI BiFETs; they can be used double the bandwidth of TL6x and TL3x circuits, or reduce power consumption of TL5x, TL7x, and TL8x circuits by nearly 9%. BiFET operational amplifiers offer the inherently-higher input impedance of the JFET-input transisrs, without sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption. The TLE26x family features a high-output-drive circuit capable of driving 1-Ω loads at supplies as low as ±5. This makes them uniquely suited for driving transformer loads in modems and other applications requiring good ac characteristics, low power, and high output drive. Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generar is useful when operating BiFET amplifiers from single supplies. The TLE26x are fully specified at ±15 and ± 5. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS families of operational amplifiers (TLC- and TL-prefixes) are recommended. When moving from BiFET CMOS amplifiers, particular attention should be paid slew rate and bandwidth requirements, and output loading. The Texas Instrument TL2432 and TL2442 CMOS operational amplifiers are excellent choices consider. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconducr products and disclaimers there appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 1998, Texas Instruments Incorporated POST OFFICE BOX DALLAS, TEXAS

2 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TA IOmax AT SMALL OUTLINE (D) TLE261 AAILABLE OPTIONS PACKAGED DEICES CHIP CARRIER (FK) CERAMIC DIP (JG) PLASTIC DIP (P) TSSOP (PW) CHIP FORM (Y) 5 µ C 7 C 1.5 m TLE261ACD TLE261ACP 3 m TLE261CD TLE261CP TLE261CPWLE TLE261Y 5 µ 4 C 85 C 1.5 m TLE261AID TLE261AIP 3 m TLE261ID TLE261IP 5 µ TLE261BMJG 55 C m TLE261AMD TLE261AMFK TLE261AMJG TLE261AMP 3 m TLE261MD TLE261MFK TLE261MJG TLE261MP The D packages are available taped and reeled. Add R suffix device type (e.g., TLE261ACDR).Chips are tested at. The PW package is available left-end taped and reeled (indicated by the LE suffix on the device type (e.g., TLE261CPWLE). Chip forms are tested at only. TLE262 AAILABLE OPTIONS PACKAGED DEICES TA IOmax SMALL OUTLINE CHIP CARRIER CERAMIC DIP PLASTIC DIP AT (D) (FK) (JG) (P) C 1 m TLE262BCD TLE262BCP 2 m TLE262ACD TLE262ACP 7 C 4 m TLE262CD TLE262CP 4 C 1 m TLE262BID TLE262BIP 2 m TLE262AID TLE262AIP 85 C 4 m TLE262ID TLE262IP 55 C 1 m TLE262BMD TLE262BMFK TLE262BMJG TLE262BMP 2 m TLE262AMD TLE262AMFK TLE262AMJG TLE262AMP 1 4 m TLE262MD TLE262MFK TLE262MJG TLE262MP The D packages are available taped and reeled. Add R suffix device type (e.g., TLE262ACDR). Chip forms are tested at only. CHIP FORM (Y) TLE262Y TLE264 AAILABLE OPTIONS PACKAGED DEICES IOmax SMALL OUTLINE CHIP CARRIER CERAMIC DIP PLASTIC DIP TA AT (D) (FK) (J) (N) C 7 C 4 C 85 C 55 C 1 2 m 4 m 6 m 2 m 4 m 6 m 2 m 4 m 6 m TLE264ACD TLE264CD TLE264AID TLE264ID TLE264AMD TLE264MD TLE264AMFK TLE264MFK TLE264BMJ TLE264AMJ TLE264MJ TLE264BCN TLE264ACN TLE264CN TLE264BIN TLE264AIN TLE264IN TLE264BMN TLE264AMN TLE264MN The D packages are available taped and reeled. Add R suffix device type, (e.g., TLE264ACDR). Chip forms are tested at only. CHIP FORM (Y) TLE264Y 2 POST OFFICE BOX DALLAS, TEXAS 75265

3 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261, TLE261A, AND TLE261B D, DB, JG, P, OR PW PACKAGE (TOP IEW) TLE262, TLE262A, TLE262B D, JG, OR P PACKAGE (TOP IEW) TLE264, TLE264A, TLE264B D, J, OR N PACKAGE (TOP IEW) OFFSET N1 IN IN+ CC NC CC + OUT OFFSET N2 1OUT 1IN 1IN+ CC CC + 2OUT 2IN 2IN+ 1OUT 1IN 1IN+ CC + 2IN+ 2IN 2OUT OUT 4IN 4IN+ CC 3IN+ 3IN 3OUT TLE261M, TLE261AM, TLE261BM FK PACKAGE (TOP IEW) TLE262M, TLE262AM, TLE262BM FK PACKAGE (TOP IEW) TLE264M, TLE264AM, TLE264BM FK PACKAGE (TOP IEW) NC IN NC IN + NC NC OFFSET N1 NC NC NC NC CC NC OFFSET N2 NC NC CC + NC OUT NC NC 1IN NC 1IN+ NC NC NC 1OUT NC CC + NC NC CC NC 2IN+ NC 2OUT NC 2IN NC 1IN+ NC CC + NC 2IN+ 2IN 1IN 2OUT 1OUT NC NC 3OUT 4OUT 3IN 4IN IN+ NC CC NC 3IN+ NC No internal connection POST OFFICE BOX DALLAS, TEXAS

4 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261Y chip information This chip, when properly assembled, displays characteristics similar the TLE261. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS (7) (6) OFFSET N1 (1) CC + (7) IN + IN (3) (2) (6) OUT OFFSET N2 (5) (4) CC 65 (5) CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 X 4 MILS MINIMUM TJmax = 15 C (1) (2) (4) (3) TOLERANCES ARE ± 1%. ALL DIMENSIONS ARE IN MILS. PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP POST OFFICE BOX DALLAS, TEXAS 75265

5 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262Y chip information This chip, when properly assembled, displays characteristics similar the TLE262. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. (1) BONDING PAD ASSIGNMENTS (8) (7) 1IN+ 1IN 2OUT (3) (2) (7) CC+ (8) + + (1) (5) (6) 1OUT 2IN+ 2IN (4) CC 75 (2) (6) CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 4 MILS MINIMUM TJmax = 15 C TOLERANCES ARE ±1%. (3) (4) 73 (5) ALL DIMENSIONS ARE IN MILS. PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF THE CHIP. POST OFFICE BOX DALLAS, TEXAS

6 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE264Y chip information This chip, when properly assembled, displays characteristics similar the TLE264. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. 73 (14) (13) BONDING PAD ASSIGNMENTS (12) (11)(1) (9) (8) 1IN+ 1IN 2OUT 3IN+ 3IN 4OUT CC+ (4) (3) + (1) (2) 1OUT (5) + (7) 2IN+ (1) (9) (14) + + (11) (6) (8) (12) (13) 2IN 3OUT 4IN+ 4IN (1) (2) (3) (4) (5) (6) (7) CC CHIP THICKNESS: 15 MILS TYPICAL 139 BONDING PADS: 4 4 MILS MINIMUM TJmax = 15 C TOLERANCES ARE ±1%. ALL DIMENSIONS ARE IN MILS. PIN (11) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. 6 POST OFFICE BOX DALLAS, TEXAS 75265

7 equivalent schematic (each channel) CC + Q9 Q13 Q32 POST OFFICE BOX DALLAS, TEXAS IN + IN Q4 Q1 Q3 Q5 Q7 R1 1.1 kω Q2 OFFSET N2 OFFSET N1 C1 15 pf Q6 R4 55 kω See Note A Q8 R3 2.4 kω C2 15 pf R2 1.1 kω Q1 R5 6 kω Q11 C3 5.3 pf NOTES: A. OFFSET N1 AND OFFSET N2 are only availiable on the TLE261x devices. B. Component values are nominal. Q14 Q15 Q12 Q16 Q2 Q21 Q22 Q18 Q19 Q17 R6 2.7 kω Q24 CC Q25 Q23 Q26 Q28 Q27 ACTUAL DEICE COMPONENT COUNT COMPONENT TLE261 TLE262 TLE264 Transisrs Resisrs Diodes Capacirs Q29 R7 6 Ω D1 Q3 Q31 Q33 Q34 D2 Q35 Q36 Q37 Q38 Q39 Q42 R8 2 Ω R9 1 Ω Q4 Q41 OUT TLE26x, TLE26xA, TLE26xB, TLE26xY EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE µ POWER OPERATIONAL AMPLIFIERS SLOS193A FEBRUARY 1997 REISED MARCH 1998

8 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, CC+ (see Note 1) Supply voltage, CC Differential input voltage, ID (see Note 2) ±38 Input voltage range, I (any input) ± CC Input current, I I (each input) ±1 ma Output current, I O ±8 ma Total current in CC ma Total current out of CC ma Duration of short-circuit current at (or below) (see Note 3) unlimited Continuous tal dissipation See Dissipation Rating Table Operating free-air temperature range, T A : C suffix C 7 C I suffix C 85 C M suffix C 1 Srage temperature range C 15 C Case temperature for 6 seconds: FK package C Lead temperature 1,6 mm (1/16 inch) from case for 1 seconds: D, P, or PW package C Lead temperature 1,6 mm (1/16 inch) from case for 6 seconds: JG package C Stresses beyond those listed under absolute maximum ratings may cause permanent damage the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect the midpoint between CC+ and CC. 2. Differential voltages are at IN+ with respect IN. 3. The output may be shorted either supply. Temperature and /or supply voltages must be limited ensure that the maximum dissipation rating is not exceeded. PACKAGE TA POWER RATING DISSIPATION RATING TABLE DERATING FACTOR ABOE TA = TA = 7 C POWER RATING TA = 85 C POWER RATING TA = 1 POWER RATING D mw 5.8 mw/ C 464 mw 377 mw 145 mw D mw 7.6 mw/ C 68 mw 494 mw 19 mw FK 1375 mw 11. mw/ C 88 mw 715 mw 275 mw J 1375 mw 11. mw/ C 88 mw 715 mw 275 mw JG 15 mw 8.4 mw/ C 672 mw 546 mw 21 mw N 115 mw 9.2 mw/ C 736 mw 598 mw 23 mw P 1 mw 8. mw/ C 64 mw 52 mw 2 mw PW 525 mw 4.2 mw/ C 336 mw recommended operating conditions C SUFFIX I SUFFIX M SUFFIX MIN MAX MIN MAX MIN MAX Supply voltage, CC± ±3.5 ±18 ±3.5 ±18 ±3.5 ±18 Common-mode mode input voltage, IC CC± = ± CC± = ± Operating free-air temperature, TA C 8 POST OFFICE BOX DALLAS, TEXAS 75265

9 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261C electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) TLE261C TLE261AC TLE261BC TLE261C Full range 4 IO Input offset voltage TLE261AC αio IIO IIB ICR OM+ OM TLE261BC Temperature coefficient of input offset voltage IC =, RS=5Ω Ω Full range Full range 2.4 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 Ω RL = 1 Ω 1 pa Full range.8 na 3 pa Full range 2 na Full range Full range Full range Full range Full range O = ±28 ±2.8, RL=1kΩ Full range AD Large-signal differential voltage amplification O = 2, RL= 1 Ω /m Full range O = 2, RL= 1 Ω Full range.25 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω Full range 65 CC± = ±5 ±15, ksr Supply-voltage rejection ratio ( CC±/ IO) RS = 5 Ω Full range 75 Full range is C 7 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. db db POST OFFICE BOX DALLAS, TEXAS

10 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261C electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) (continued) ICC Supply current TLE261C TLE261AC TLE261BC O =, No load Full range 35 ICC Supply-current change over operating temperature range Full range 29 µa Full range is C 7 C. TLE261C operating characteristics at specified free-air temperature, CC± = ±5 SR Slew rate at unity gain (see Figure 1) kω, CL= 1 pf n Equivalent input noise voltage (see Figure 2) f = 1 Hz, f = 1 khz, RS = 2 Ω RS = 2 Ω TLE261C TLE261AC TLE261BC Full range 2.1 µa /µs n/ Hz N(PP) Peak--peak equivalent input noise voltage f=1hz1hz µ In Equivalent input noise current f = 1 khz 1 fa/ Hz AD = 2, f = 1 khz, THD Total harmonic disrtion O(PP) = 2, RL = 1 kω B1 Unity-gain bandwidth (see Figure 3) ts Settling time RL = 1 kω, RL = 1 Ω,.1%.1% CL = 1 pf CL = 1 pf.25% 25% BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 14 khz RL = 1 kω, CL = 1 pf 58 φ m Phase margin at unity gain (see Figure 3) RL = 1 Ω, CL = 1 pf 75 Full range is C 7 C MHz µs 1 POST OFFICE BOX DALLAS, TEXAS 75265

11 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261C electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) TLE261C TLE261AC TLE261BC TLE261C.6 3 Full range 3.9 IO Input offset voltage TLE261AC αio IIO IIB ICR OM+ OM TLE261BC Temperature coefficient of input offset voltage IC =, RS=5kΩ Full range Full range 1 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 6 Ω RL = 6 Ω O = ±1, AD Large-signal differential voltage amplification O = 8, RL = 6 Ω O = 8, RL= 6 Ω 2 pa Full range 1 na 4 pa Full range 3 na Full range Full range Full range Full range Full range Full range Full range Full range 1 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω 72 9 Full range 7 CC± = ±5 ±15, ksr Supply-voltage rejection ratio ( CC±/ IO) db RS = 5 Ω Full range 75 Full range is C 7 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. /m db POST OFFICE BOX DALLAS, TEXAS

12 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261C electrical characteristics at specified free-air temperature, CC ± = ±15 (unless otherwise noted) (continued) TLE261C TLE261AC TLE261BC ICC Supply current O O =, No load Full range 375 µa ICC Supply-current change over operating temperature range Full range 34 µa Full range is C 7 C. TLE261C operating characteristics at specified free-air temperature, CC± = ±15 TLE261C TLE261AC TLE261BC SR Slew rate at unity gain (see Figure 1) kω, CL= 1 pf Full range 2.5 n Equivalent input noise voltage (see Figure 2) f = 1 Hz, f = 1 khz, RS = 2 Ω RS = 2 Ω /µs n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1.1 fa/ Hz AD = 2, f = 1 khz, THD Total harmonic disrtion O(PP) = 2, RL = 1 kω B1 Unity-gain bandwidth (see Figure 3) ts Settling time RL = 1 kω, RL = 6 Ω,.1%.1% CL = 1 pf CL = 1 pf.25% 25% BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz φ m Phase margin at unity gain (see Figure 3) Full range is C 7 C. RL = 1 kω, RL = 6 Ω, CL = 1 pf CL = 1 pf MHz µs 12 POST OFFICE BOX DALLAS, TEXAS 75265

13 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261I electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) PARAMETER TEST CONDITIONS TA TLE261BI TLE261I, TLE261AI TLE261I Full range 4.4 IO Input offset voltage TLE261AI αio IIO IIB ICR OM+ OM TLE261BI Temperature coefficient of input offset voltage Full range m = Full range 2.7 IC, RS = 5 Ω Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 Ω RL = 1 Ω 1 pa Full range 2 na 3 pa Full range 4 na Full range Full range Full range Full range Full range 2 = 15 8 O ±2.8, RL = 1 kω Full range 2 AD Large-signal differential voltage amplification = O 2, RL = 1 Ω Full range.5 /m =.5 3 O 2, RL = 1 Ω Full range.25 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω mode IC = ICRmin, CMRR Common-mode rejection ratio RS = 5 Ω Full range 65 ksr ICC ICC Supply-voltage rejection ratio ( CC±/ IO) Supply current Supply-current change over operating temperature range CC± = ±5 ±15, RS = 5 Ω Full range µa O =, Full range 35 No load Full range 29 µa Full range is 4 C 85 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. db db POST OFFICE BOX DALLAS, TEXAS

14 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261I operating characteristics at specified free-air temperature, CC± = ±5 TLE261I TLE261AI TLE261BI SR Slew rate at unity gain (see Figure 1) kω, CL= 1 pf Full range 1.7 n Equivalent input noise voltage (see Figure 2) f = 1 Hz, f = 1 khz, RS = 2 Ω RS = 2 Ω /µs n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1 fa/ Hz AD = 2, f = 1 khz, THD Total harmonic disrtion O(PP) = 2, RL = 1 kω B1 Unity-gain bandwidth (see Figure 3) ts Settling time RL = 1 kω, RL = 1 Ω,.1%.1% CL = 1 pf CL = 1 pf.25% 25% BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 14 khz RL = 1 kω, CL = 1 pf 58 φ m Phase margin at unity gain (see Figure 3) RL = 1 Ω, CL = 1 pf 75 Full range is 4 C 85 C MHz µs 14 POST OFFICE BOX DALLAS, TEXAS 75265

15 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261I electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) PARAMETER TEST CONDITIONS TA TLE261BI TLE261I, TLE261AI TLE261I.6 3 Full range 4.3 IO Input offset voltage TLE261AI αio IIO IIB ICR OM+ OM Temperature coefficient of input offset voltage Input offset voltage long-term drift (see Note 4) Input offset current Input bias current Common-mode mode input voltage range TLE261BI Maximum positive peak output voltage swing Maximum negative peak output voltage swing Full range m Full range 1.3 IC =, RS = 5 Ω Full range 6 µ/ C RL = 6 Ω RL = 6 Ω.4 µ/mo 2 pa Full range 3 na 4 pa Full range 5 na Full range Full range Full range Full range Full range 12 = 3 23 O ±1, RL = 1 kω Full range 2 AD Large-signal differential voltage amplification = 25 1 O 8, RL = 6 Ω Full range 1 /m = 3 25 O 8, RL = 6 Ω Full range 1 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω CMRR Common-mode mode rejection ratio = 72 9 IC ICRmin, RS = 5 Ω Full range 65 CC± = ±5 ±15, ksr Supply-voltage rejection ratio ( CC±/ IO) RS = 5 Ω Full range 65 ICC ICC Supply current Supply-current change over operating temperature range µa O O =, Full range 375 No load Full range 34 µa Full range is 4 C 85 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. db db POST OFFICE BOX DALLAS, TEXAS

16 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261I operating characteristics at specified free-air temperature, CC± = ±15 TLE261I TLE261AI TLE261BI SR Slew rate at unity gain (see Figure 1) kω, CL= 1 pf Full range 2.1 n Equivalent input noise voltage (see Figure 2) f = 1 Hz, f = 1 khz, RS = 2 Ω RS = 2 Ω /µs n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1.1 fa/ Hz AD = 2, f = 1 khz, THD Total harmonic disrtion O(PP) = 2, RL = 1 kω B1 Unity-gain bandwidth (see Figure 3) ts Settling time RL = 1 kω, RL = 6 Ω,.1%.1% CL = 1 pf CL = 1 pf.25% 25% BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz RL = 1 kω, CL = 1 pf 6 φ m Phase margin at unity gain (see Figure 3) RL = 6 Ω, CL = 1 pf 7 Full range is 4 C 85 C MHz µs 16 POST OFFICE BOX DALLAS, TEXAS 75265

17 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261M electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) TLE261M TLE261AM TLE261BM TLE261M Full range 6 IO Input offset voltage TLE261AM αio IIO IIB ICR TLE261BM Temperature coefficient of input offset voltage IC =, RS=5Ω Ω Full range Full range 3.1 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range OM+ Maximum positive peak output voltage swing RL = 6 Ω OM Maximum negative peak output voltage swing FK and JG packages D and P packages RL = 1 Ω RL = 6 Ω RL = 1 Ω 1 pa Full range 15 na 3 pa Full range 3 na Full range Full range Full range Full range Full range Full range Full range O = ±28 ±2.8, RL=1kΩ Full range 2 AD Large-signal differential voltage amplification FK and JG packages O =25 2.5, RL= 6 Ω 1 65 Full range.5 O = RL=,RL 6 Ω 1 16 Full range.5 /m D and P packages O =2, RL= 1 Ω Full range O = 2, RL= 1 Ω Full range.25 Full range is 55 C 1. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. POST OFFICE BOX DALLAS, TEXAS

18 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261M electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) (continued) TLE261M TLE261AM TLE261BM ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω mode IC = ICRmin, CMRR Common-mode rejection ratio RS = 5 Ω Full range 6 ksr Supply-voltage rejection ratio ( CC ±/ IO) ICC ICC Supply current Supply-current change over operating temperature range Full range is 55 C 1. CC ± = ±5 ±15, RS = 5 Ω O =, No load Full range Full range 35 db db µa Full range 39 µa TLE261M operating characteristics at specified free-air temperature, CC± = ±5, T A = PARAMETER TEST CONDITIONS TLE261M TLE261AM TLE261BM SR Slew rate at unity gain (see Figure 1) kω, CL= 1 pf /µs n Equivalent input noise voltage (see Figure 2) f = 1 Hz, RS = 2 Ω 59 f = 1 khz, RS = 2 Ω 43 N(PP) Peak--peak equivalent input noise voltage f=1hz1hz µ n/ Hz In Equivalent input noise current f = 1 khz 1 fa/ Hz AD = 2, f = 1 khz, THD Total harmonic disrtion O(PP) = 2, RL = 1 kω B1 Unity-gain bandwidth (see Figure 3) ts Settling time.25% 25% RL = 1 kω, CL = 1 pf 1.8 RL = 6 Ω, CL = 1 pf 1.3.1% 5.1% 1 BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 14 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 58 RL = 6 Ω, CL = 1 pf 75 MHz µs 18 POST OFFICE BOX DALLAS, TEXAS 75265

19 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261M electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) PARAMETER TEST CONDITIONS TA TLE261BM TLE261M,TLE261AM TLE261M.6 3 Full range 6 IO Input offset voltage TLE261AM αio IIO IIB ICR OM+ OM Temperature coefficient of input offset voltage Input offset voltage long-term drift (see Note 4) Input offset current Input bias current Common-mode mode input voltage range TLE261BM Maximum positive peak output voltage swing Maximum negative peak output voltage swing Full range m Full range 1.7 IC =, RS = 5 Ω Full range 6 µ/ C RL = 6 Ω RL = 6 Ω.4 µ/mo 2 pa Full range 2 na 4 pa Full range 4 na Full range Full range Full range Full range Full range 12 = 3 23 O ±1, RL = 1 kω Full range 2 AD Large-signal differential voltage = 25 1 O 8, amplification RL = 6 Ω Full range 7 = 3 25 O 8, RL = 6 Ω Full range 1 /m ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω CMRR Common-mode mode rejection ratio = 72 9 IC ICRmin, RS = 5 Ω Full range 65 Supply-voltage rejection ratio CC ± = ±5 ±15, ksr db ( CC ± / IO) RS = 5 Ω Full range 65 Full range is 55 C 1. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. db POST OFFICE BOX DALLAS, TEXAS

20 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261M electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) (continue) TLE261M,TLE261AM PARAMETER TEST CONDITIONS TLE261BM TA ICC Supply current µa Full range 375 O =, No load Supply-current change over operating ICC Full range 46 µa temperature range Full range is 55 C 1. TLE261M operating characteristics at specified free-air temperature, CC± = ±15 TLE261M TLE261AM TLE261BM SR Slew rate at unity gain (see Figure 1) kω, CL= 1 pf Full range 1.8 n Equivalent input noise voltage (see Figure 2) f = 1 Hz, RS = 2 Ω 7 f = 1 khz, RS = 2 Ω 4 N(PP) Peak--peak equivalent input noise voltage f=1hz1hz µ /µs n/ Hz In Equivalent input noise current f = 1 khz 1.1 fa/ Hz THD Total harmonic disrtion B1 Unity-gain bandwidth (see Figure 3) ts Settling time AD = 2, O(PP) = 2, f = 1 khz, RL = 1 kω.25% RL = 1 kω, CL = 1 pf 2 RL = 6 Ω, CL = 1 pf 1.5.1% 5.1% 1 BOM Maximum output-swing bandwidth AD =1 1, RL=1kΩ 4 khz φm Phase margin at unity gain (see Figure 3) Full range is 55 C 1. RL = 1 kω, CL = 1 pf 6 RL = 6 Ω, CL = 1 pf 7 MHz µs 2 POST OFFICE BOX DALLAS, TEXAS 75265

21 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE261Y electrical characteristics at CC± = ±15, T A = (unless otherwise noted) PARAMETER TEST CONDITIONS TLE261Y IO Input offset voltage.6 3 m αio Input offset voltage long-term drift (see Note 4).4 µ/mo IC =, RS=5Ω Ω IIO Input offset current 2 pa IIB Input bias current 4 pa ICR OM+ OM Common-mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 kω RL = 6 Ω RL = 1 kω RL = 6 Ω O = ±1, RL = 1 kω 3 23 AD Large-signal differential voltage amplification O = 8, RL = 6 Ω 25 1 /m O = 8, RL = 6 Ω 3 25 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 28 Ω CMRR Common-mode rejection ratio RS = 5 Ω, IC = ICRmin 72 9 db CC ± = ±5 ±15, ksr Supply-voltage rejection ratio ( CC / IO) RS = 5 Ω db ICC Supply current O =, No load µa NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. TLE261Y operating characteristics at CC± = ±15, T A = PARAMETER TEST CONDITIONS TLE261Y SR Slew rate at unity gain (see Figure 1) RL = 1 kω, CL = 1 pf /µs n Equivalent input noise voltage (see Figure 2) f = 1 Hz, RS = 2 Ω 7 f = 1 khz, RS = 2 Ω 4 N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ n/ Hz In Equivalent input noise current f = 1 Hz 1.1 fa/ Hz AD = 2, f = 1 khz, THD Total harmonic disrtion O(PP) = 2, RL = 1 kω B1 Unity-gain bandwidth (see Figure 3) ts Settling time.25% 25% RL = 1 kω, CL = 1 pf 2 RL = 6 Ω, CL = 1 pf 1.5.1% 5.1% 1 BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 6 RL = 6 Ω, CL = 1 pf 7 MHz µs POST OFFICE BOX DALLAS, TEXAS

22 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262C electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) TLE262C TLE262AC TLE262BC TLE262C 1 5 Full range 5.9 IO Input offset voltage TLE262AC αio IIO IIB ICR OM+ OM TLE262BC Temperature coefficient of input offset voltage IC =, RS =5Ω Ω.9 4 Full range Full range 3.9 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 Ω RL = 1 Ω O = ± , AD Large-signal differential voltage amplification O = 2, RL = 1 Ω O = 2, RL = 1 Ω 1 pa Full range.8 na 3 pa Full range 2 na Full range Full range Full range Full range Full range Full range Full range Full range.25 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω ksr Supply-voltage rejection ratio ( CC ±/ IO) Full range 65 CC ± = ± 5 ± 15, RS = 5 Ω Full range 75 Full range is C 7 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. /m db db 22 POST OFFICE BOX DALLAS, TEXAS 75265

23 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262C electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) (continued) ICC ICC TLE262C TLE262AC TLE262BC Supply current µa Full range 635 O =, No load Supply-current change over operating Full range 26 µa temperature range Full range is C 7 C. TLE262C operating characteristics at specified free-air temperature, CC± = ±5 TLE262C TLE262AC TLE262BC SR Slew rate at unity gain (see Figure 1) kω, CL = 1 pf Full range 2.1 /µs f = 1 Hz, RS = 2 Ω 59 1 n Equivalent input noise voltage (see Figure 2) f = 1 khz, RS = 2 Ω 43 6 n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1 fa/ Hz THD Total harmonic disrtion O(PP) = 2, RL = 1 kω, AD = 2, f = 1 khz.25% 25% B1 Unity-gain bandwidth (see Figure 3) RL = 1 kω, CL = 1 pf 1.8 RL = 1 Ω, CL = 1 pf 1.3 MHz Settling time.1% 5.1% 1 µs BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 14 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 58 RL = 1 Ω, CL = 1 pf 75 Full range is C 7 C. POST OFFICE BOX DALLAS, TEXAS

24 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262C electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) TA PARAMETER TEST CONDITIONS TLE262AC TLE262BC TLE262C TLE262C.9 4 Full range 4.9 IO Input offset voltage TLE262AC αio IIO IIB ICR OM+ OM TLE262BC Temperature coefficient of input offset voltage IC =, RS =5Ω Ω.8 2 Full range Full range 1.9 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 6 Ω RL = 6 Ω O = ± 1, AD Large-signal differential voltage amplification O = 8, RL = 6 Ω O = 8, RL = 6 Ω 2 pa Full range 1 na 4 pa Full range 3 na Full range Full range Full range Full range Full range Full range Full range Full range 1 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω ksr Supply-voltage rejection ratio ( CC ±/ IO) 72 9 Full range 7 CC ± = ± 5 ± 15, RS = 5 Ω Full range 75 Full range is C 7 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. /m db db 24 POST OFFICE BOX DALLAS, TEXAS 75265

25 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262C electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) (continued) ICC ICC TLE262C TLE262AC TLE262BC Supply current µa Full range 715 O =, No load Supply-current change over operating Full range 36 µa temperature range Full range is C 7 C. TLE262C operating characteristics at specified free-air temperature, CC± = ±15 TLE262C TLE262AC TLE262BC SR Slew rate at unity gain (see Figure 1) kω, CL = 1 pf Full range 2.5 n Equivalent input noise voltage (see Figure 2) /µs f = 1 Hz, RS = 2 Ω 7 1 f = 1 khz, RS = 2 Ω 4 6 n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1.1 fa/ Hz O(PP) = 2, THD Total harmonic disrtion AD = 2, B1 Unity-gain bandwidth (see Figure 3) Settling time RL = 1 kω, f = 1 khz.25% 25% RL = 1 kω, CL = 1 pf 2 RL = 6 Ω, CL = 1 pf 1.5.1% 5.1% 1 BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz φm Phase margin at unity gain (see Figure 3) Full range is C 7 C. RL = 1 kω, CL = 1 pf 6 RL = 6 Ω, CL = 1 pf 7 MHz µs POST OFFICE BOX DALLAS, TEXAS

26 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262I electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) TLE262I TLE262AI TLE262BI TLE262I 1 5 Full range 6.3 IO Input offset voltage TLE262AI αio IIO IIB ICR OM+ OM TLE262BI Temperature coefficient of input offset voltage IC =, RS =5Ω Ω.9 4 Full range Full range 4.3 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 Ω RL = 1 Ω O = ± , AD Large-signal differential voltage amplification O = 2, RL = 1 Ω O = 2, RL = 1 Ω 1 pa Full range 2 na 3 pa Full range 4 na Full range Full range Full range Full range Full range Full range Full range Full range.25 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω ksr Supply-voltage rejection ratio ( CC ±/ IO) Full range 65 CC ± = ± 5 ± 15, RS = 5 Ω Full range 65 Full range is 4 C 85 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. /m db db 26 POST OFFICE BOX DALLAS, TEXAS 75265

27 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262I electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) (continued) ICC ICC TLE262I TLE262AI TLE262BI Supply current µa Full range 64 O =, No load Supply-current change over operating Full range 54 µa temperature range Full range is 4 C 85 C. TLE262I operating characteristics at specified free-air temperature, CC ± = ±5 TLE262I TLE262AI TLE262BI SR Slew rate at unity gain (see Figure 1) kω, CL = 1 pf Full range 1.7 /µs f = 1 Hz, RS = 2 Ω 59 1 n Equivalent input noise voltage (see Figure 2) f = 1 khz, RS = 2 Ω 43 6 n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1 fa/ Hz THD Total harmonic disrtion O(PP) = 2, RL = 1 kω, AD = 2, f = 1 khz.25% 25% B1 Unity-gain bandwidth (see Figure 3) RL = 1 kω, CL = 1 pf 1.8 RL = 1 Ω, CL = 1 pf 1.3 MHz Settling time.1% 5.1% 1 µs BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 14 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 58 RL = 1 Ω, CL = 1 pf 75 Full range is 4 C 85 C. POST OFFICE BOX DALLAS, TEXAS

28 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262I electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) TLE262I TLE262AI TLE262BI TLE262I.9 4 Full range 5.3 IO Input offset voltage TLE262AI αio IIO IIB ICR OM+ OM TLE262BI Temperature coefficient of input offset voltage IC =, RS =5Ω Ω.8 2 Full range Full range 2.3 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 6 Ω RL = 6 Ω O = ± 1, AD Large-signal differential voltage amplification O = 8, RL = 6 Ω O = 8, RL = 6 Ω 2 pa Full range 3 na 4 pa Full range 5 na Full range Full range Full range Full range Full range Full range Full range Full range 1 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω ksr Supply-voltage rejection ratio ( CC ±/ IO) 72 9 Full range 65 CC ± = ± 5 ± 15, RS = 5 Ω Full range 65 Full range is 4 C 85 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. /m db db 28 POST OFFICE BOX DALLAS, TEXAS 75265

29 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262I electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) (continued) ICC ICC TLE262I TLE262AI TLE262BI Supply current µa Full range 72 O =, No load Supply-current change over operating Full range 74 µa temperature range Full range is 4 C 85 C. TLE262I operating characteristics at specified free-air temperature, CC± = ±15 TLE262I TLE262AI TLE262BI SR Slew rate at unity gain (see Figure 1) kω, CL = 1 pf Full range 2.1 /µs f = 1 Hz, RS = 2 Ω 7 1 n Equivalent input noise voltage (see Figure 2) f = 1 khz, RS = 2 Ω 4 6 n/ Hz N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ In Equivalent input noise current f = 1 khz 1.1 fa/ Hz THD Total harmonic disrtion O(PP) = 2, RL = 1 kω, AD = 2, f = 1 khz.25% 25% B1 Unity-gain bandwidth (see Figure 3) RL = 1 kω, CL = 1 pf 2 RL = 6 Ω, CL = 1 pf 1.5 MHz Settling time.1% 5.1% 1 µs BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 6 RL = 6 Ω, CL = 1 pf 7 Full range is 4 C 85 C. POST OFFICE BOX DALLAS, TEXAS

30 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262M electrical characteristics at specified free-air temperature, CC± = ±5 TLE262M TLE262AM TLE262BM TLE262M 1 5 Full range 7 IO Input offset voltage TLE262AM αio IIO IIB ICR TLE262BM Temperature coefficient of input offset voltage IC =, RS =5Ω Ω.9 4 Full range Full range 5 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output FK and JG OM+ voltage swing packages OM Maximum negative peak output voltage swing D and P packages FK and JG packages D and P packages RL = 6 Ω RL = 1 Ω RL = 6 Ω RL = 1 Ω 1 pa Full range 15 na 3 pa Full range 3 na Full range Full range Full range Full range Full range Full range Full range O = ±28 ±2.8, Full range 2 AD Large-signal g differential voltage amplification FK and JG packages O =25 2.5, RL = 6 Ω 1 65 Full range.5 O = , RL = 6 Ω 1 16 Full range.5 /m D and P packages O =2, RL = 1 Ω Full range.5 O = 2, RL = 1 Ω.5 3 Full range.25 Full range is 55 C 1. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. 3 POST OFFICE BOX DALLAS, TEXAS 75265

31 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262M electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) TLE262M TLE262AM TLE262BM ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR ksr ICC ICC Common-mode mode rejection ratio Supply-voltage rejection ratio ( CC ±/ IO) Supply current (two amplifiers) Supply-current change over operating temperature range (two amplifiers) Full range is 55 C 1. IC = ICRmin RS = 5 Ω, Full range 6 CC ± = ±5 ±15, RS = 5 Ω Full range 65 O =, No load Full range 65 db db µa Full range 72 µa TLE262M operating characteristics at specified free-air temperature, T A =, CC± = ±5 PARAMETER TEST CONDITIONS TLE262M TLE262AM TLE262BM SR Slew rate at unity gain (see Figure 1) RL = 1 kω, CL = 1 pf 3.4 /µs n Equivalent input noise voltage (see Figure 2) f = 1 Hz, RS = 2 Ω 59 f = 1 khz, RS = 2 Ω 43 N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ n/ Hz In Equivalent input noise current f = 1 khz 1 fa/ Hz O(PP) = 2, THD Total harmonic disrtion AD = 2, B1 Unity-gain bandwidth (see Figure 3) Settling time RL = 1 kω, f = 1 khz.25% 25% RL = 1 kω, CL = 1 pf 1.8 RL = 6 Ω, CL = 1 pf 1.3.1% 5.1% 1 BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 14 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 58 RL = 6 Ω, CL = 1 pf 75 MHz µs POST OFFICE BOX DALLAS, TEXAS

32 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262M electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) TLE262M TLE262AM TLE262BM TLE262M.9 4 Full range 6 IO Input offset voltage TLE262AM αio IIO IIB ICR OM+ OM TLE262BM Temperature coefficient of input offset voltage IC =, RS =5Ω Ω.8 2 Full range Full range 3 m Full range 6 µ/ C Input offset voltage long-term drift (see Note 4).4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 6 Ω RL = 6 Ω O = ± 1, AD Large-signal differential voltage amplification O = 8, RL = 6 Ω O = 8, RL = 6 Ω 2 pa Full range 2 na 4 pa Full range 4 na Full range Full range Full range Full range Full range Full range Full range Full range 1 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω ksr Supply-voltage rejection ratio ( CC ± / IO) 72 9 Full range 65 CC ± = ± 5 ± 15, RS = 5 Ω Full range 65 Full range is 55 C 1. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. /m db db 32 POST OFFICE BOX DALLAS, TEXAS 75265

33 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262M electrical characteristics at specified free-air temperature, CC± = ±15 (unless otherwise noted) ICC ICC TLE262M TLE262AM TLE262BM Supply current µa Full range 73 O =, No load Supply-current change over operating Full range 97 µa temperature range Full range is 55 C 1. TLE262M operating characteristics at specified free-air temperature, CC± = ±15 TA PARAMETER TEST CONDITIONS TLE262AM TLE262BM TLE262M SR Slew rate at unity gain (see Figure 1) kω, CL = 1 pf Full range 1.8 n Equivalent input noise voltage (see Figure 2) f = 1 Hz, RS = 2 Ω 7 f = 1 khz, RS = 2 Ω 4 N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ /µs n/ Hz In Equivalent input noise current f = 1 khz 1.1 fa/ Hz THD Total harmonic disrtion B1 Unity-gain bandwidth (see Figure 3) Settling time O(PP) = 2, AD = 2, RL = 1 kω, f = 1 khz.25% RL = 1 kω, CL = 1 pf 2 RL = 6 Ω, CL = 1 pf 1.5.1% 5.1% 1 BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz φm Phase margin at unity gain (see Figure 3) Full range is 55 C 1. RL = 1 kω, CL = 1 pf 6 RL = 6 Ω, CL = 1 pf 7 MHz µs POST OFFICE BOX DALLAS, TEXAS

34 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE262Y electrical characteristics at CC± = ±15, T A = (unless otherwise noted) PARAMETER TEST CONDITIONS TLE262Y IO Input offset voltage.9 4 m αio Input offset voltage long-term drift (see Note 4).4 µ/mo IC =, RS =5Ω Ω IIO Input offset current 2 pa IIB Input bias current 4 pa ICR OM+ OM Common-mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 kω RL = 6 Ω RL = 1 kω RL = 6 Ω O = ±1, RL = 1 kω 3 23 AD Large-signal differential voltage amplification O = 8, RL = 6 Ω 25 1 /m O = 8, RL = 6 Ω 3 25 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode rejection ratio IC = ICRmin, RS = 5 Ω 72 9 db CC = ±5 ±15, ksr Supply-voltage rejection ratio ( CC / IO) ± RS = 5 Ω db ICC Supply current O =, No load µa NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = 25 C using the Arrhenius equation and assuming an activation energy of.96 e. TLE262Y operating characteristics at CC± = ±15, T A = PARAMETER TEST CONDITIONS TLE262Y SR Slew rate at unity gain (see Figure 1) RL = 1 kω, CL = 1 pf /µs n Equivalent input noise voltage (see Figure 2) f = 1 Hz, RS = 2 Ω 7 f = 1 khz, RS = 2 Ω 4 N(PP) Peak--peak equivalent input noise voltage f =.1 Hz 1 Hz 1.1 µ n/ Hz In Equivalent input noise current f = 1 Hz 1.1 fa/ Hz THD Total harmonic disrtion B1 Unity-gain bandwidth (see Figure 3) Settling time O(PP) = 2, AD = 2, RL = 1 kω, f = 1 khz.25% RL = 1 kω, CL = 1 pf 2 RL = 6 Ω, CL = 1 pf 1.5.1% 5.1% 1 BOM Maximum output-swing bandwidth AD = 1, RL = 1 kω 4 khz φm Phase margin at unity gain (see Figure 3) RL = 1 kω, CL = 1 pf 6 RL = 6 Ω, CL = 1 pf 7 MHz µs 34 POST OFFICE BOX DALLAS, TEXAS 75265

35 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIE SLOS193A FEBRUARY 1997 REISED MARCH 1998 TLE264C electrical characteristics at specified free-air temperature, CC± = ±5 (unless otherwise noted) TLE264C TLE264AC TLE264BC TLE264C Full range 7.9 IO Input offset voltage TLE264AC αio IIO IIB ICR OM+ OM TLE264BC Temperature coefficient of input offset voltage IC =, RS=5Ω Ω Full range Full range 4.4 m 6 µ/ C Input offset voltage long-term drift (see Note 4) Full range.4 µ/mo Input offset current Input bias current Common-mode mode input voltage range Maximum positive peak output voltage swing Maximum negative peak output voltage swing RL = 1 Ω RL = 1 Ω 1 pa Full range.8 na 3 pa Full range 2 na Full range Full range Full range Full range Full range O = ±28 ±2.8, RL=1kΩ Full range A D Large-signal differential voltage amplification O = 2, RL = 1 Ω /m Full range O = 2, RL= 1 Ω Full range.15 ri Input resistance 112 Ω ci Input capacitance 4 pf zo Open-loop output impedance IO = 56 Ω CMRR Common-mode mode rejection ratio IC = ICRmin, RS = 5 Ω ksr Supply-voltage rejection ratio ( CC± / IO) Full range 65 CC± = ±5 ±15, RS = 5 Ω Full range 75 Full range is C 7 C. NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 15 C extrapolated TA = using the Arrhenius equation and assuming an activation energy of.96 e. db db POST OFFICE BOX DALLAS, TEXAS