256K (32K x 8) CMOS EPROM TSOP A11 A3 14 V PP A12 A7 A6 A5 A4 A3 PLCC VSOP A13 A14 A Microchip Technology Inc.

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1 This document was created with FrameMaker K (2K x 8) CMS EPRM 27C256 FEATURES High speed performance - 9 ns access time available CMS Technology for low power consumption - 2 ma Active current - µa Standby current Factory programming available Auto-insertion-compatible plastic packages Auto ID aids automated programming Separate chip enable and output enable controls High speed express programming algorithm rganized 2K x 8: JEDEC standard pinouts - 28-pin Dual-in-line package - 2-pin PLCC Package - 28-pin SIC package - 28-pin Thin Small utline Package (TSP) - 28-pin ery Small utline Package (SP) - Tape and reel Data Retention > 2 years Available for the following temperature ranges: - Commercial: C to +7 C - Industrial: -4 C to +85 C - Automotive: -4 C to +25 C DESCRIPTIN The Microchip Technology Inc. 27C256 is a CMS 256K bit electrically Programmable Read nly Memory (EPRM). The device is organized as 2K words by 8 bits (2K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 9 ns. This very high speed device allows the most sophisticated microprocessors to run at full speed without the need for WAIT states. CMS design and processing enables this part to be used in systems where reduced power consumption and reliability are requirements. A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, SIC, SP or TSP packaging is available. Tape and reel packaging is also available for PLCC or SIC packages. PACKAGE TYPES TSP E A 2 A9 A8 4 A 5 A4 6 CC 7 PP 8 A2 9 A7 A6 A5 2 A4 A 4 PLCC DIP/SIC SP E A A9 A8 A A4 CC PP A2 A7 A6 A5 A4 A A6 5 A5 6 A4 7 A 8 A2 9 A A NC 2 PP A2 A7 A6 A5 A4 A A2 A A 2 SS A7 A PP NU cc A4 A SS 27C256 27C256 27C256 27C256 2 NU A8 28 A9 27 A 26 NC 25 E 24 A CC A4 A A8 A9 A E A A D7 25 D6 24 D5 2 D4 22 D 2 SS 2 D2 9 D 8 D 7 A 6 A 5 A2 A SS 2 A A A2 996 Microchip Technology Inc. DSL-page

2 . ELECTRICAL CHARACTERISTICS. Maximum Ratings* CC and input voltages w.r.t. SS to PP voltage w.r.t. SS during programming to +4. oltage on A9 w.r.t. SS to +.5 utput voltage w.r.t. SS to CC +. Storage temperature C to +5 C Ambient temp. with power applied C to +25 C *Notice: Stresses above those listed under Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE -: Name A-A4 E PP - 7 CC SS NC NU PIN FUNCTIN TABLE Address Inputs Chip Enable utput Enable Function Programming oltage Data utput +5 Power Supply Ground No Connection; No Internal Connection Not Used; No External Connection Is Allowed TABLE -2: READ PERATIN DC CHARACTERISTICS CC = +5 (±%) Commercial: Tamb = C to +7 C Industrial: Tamb = -4 C to +85 C Extended (Automotive): Tamb = -4 C to +25 C Parameter Part* Status Symbol Min. Max. Units Conditions Input oltages all Logic "" Logic "" CC+.8 Input Leakage all ILI - µa IN = to CC utput oltages all Logic "" Logic "" H L IH = -4 µa IL = 2. ma utput Leakage all IL - µa UT = to CC Input Capacitance all CIN 6 pf IN = ; Tamb = 25 C; f = MHz utput Capacitance all CUT 2 pf UT = ; Tamb = 25 C; f = MHz Power Supply Current, Active Power Supply Current, Standby IPP Read Current PP Read oltage C I,E C I, E all all all TTL input TTL input TTL input TTL input CMS input Read Mode Read Mode ICC ICC ICC(S) 2 IPP PP CC-.7 CC ma ma CC = 5.5; PP = CC f = MHz; E = = ; IUT = ma; = -. to.8; = 2. to CC; Note ma ma µa = CC ±.2 µa PP = 5.5 * Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges Note : Typical active current increases.75 ma per MHz up to operating frequency for all temperature ranges. DSL-page Microchip Technology Inc.

3 TABLE -: READ PERATIN AC CHARACTERISTICS AC Testing Waveform: = 2.4 and =.45; H = 2. L =.8 utput Load: TTL Load + pf Input Rise and Fall Times: ns Ambient Temperature: Commercial: Tamb = C to +7 C Industrial: Tamb = -4 C to +85 C Automotive: Tamb = -4 C to +25 C Parameter Sym 27C256-9* 27C256-* 27C C C256-2 Min Max Min Max Min Max Min Max Min Max Units Conditions Address to utput Delay tacc ns =E = to utput Delay t ns E = E to utput Delay te ns = or E to /P High Impedance utput Hold from Address or E, whichever goes first tff ns th ns * -, -9 AC Testing Waveform: = 2.4 and =.45; H =.5 and L =.5 utput Load: TTL Load + pf FIGURE -: READ WAEFRMS Address Address alid t(2) E te(2) th tff(,) utputs - 7 H L High Z alid utput High Z tacc Notes: () tff is specified for E or, whichever occurs first (2) E may be delayed up to t - t E after the falling edge of without impact on t () This parameter is sampled and is not % tested. 996 Microchip Technology Inc. DSL-page

4 TABLE -4: PRGRAMMING DC CHARACTERISTICS Ambient Temperature: Tamb = 25 C ± 5 C CC = 6.5 ±.25, PP = H =. ±.25 Parameter Status Symbol Min Max. Units Conditions Input oltages Logic Logic CC+.8 Input Leakage ILI - µa IN = to CC utput oltages Logic Logic H L IH = -4 µa IL = 2. ma CC Current, program & verify ICC2 2 ma Note PP Current, program IPP2 25 ma Note A9 Product Identification H Note : CC must be applied simultaneously or before PP and removed simultaneously or after PP TABLE -5: PRGRAMMING AC CHARACTERISTICS for Program, Program erify AC Testing Waveform: =2.4 and =.45; H=2.; L=.8 and Program Inhibit Modes utput Load: TTL Load + pf Ambient Temperature: Tamb=25 C ± 5 C CC= 6.5 ±.25, PP = H =. ±.25 Parameter Symbol Min. Max. Units Remarks Address Set-Up Time tas 2 µs Data Set-Up Time tds 2 µs Data Hold Time tdh 2 µs Address Hold Time tah µs Float Delay (2) tdf ns CC Set-Up Time tcs 2 µs Program Pulse Width () tpw 95 5 µs µs typical Set-Up Time ts 2 µs E Set-Up Time tes 2 µs PP Set-Up Time tps 2 µs Data alid from E te ns Note : For express algorithm, initial programming width tolerance is µs ±5%. 2: This parameter is only sampled and not % tested. utput float is defined as the point where data is no longer driven (see timing diagram). DSL-page Microchip Technology Inc.

5 FIGURE -2: PRGRAMMING WAEFRMS Program erify Address Address Stable Data t AS Data Stable High Z Data ut alid tah t DS t DH tdf ().(2) PP 5. tps CC 6.5(2) 5. tcs E tpw tes te () Notes: () (2) tdf and te are characteristics of the device but must be accommodated by the programmer CC = 6.5 ±.25, PP = H =. ±.25 for express algorithm TABLE -6: MDES peration Mode E PP A9-7 Read CC X DUT Program H X DIN Program erify H X DUT Program Inhibit H X High Z Standby X CC X High Z utput Disable CC X High Z Identity CC H Identity Code X = Don t Care.2 Read Mode (See Timing Diagrams and AC Characteristics) Read Mode is accessed when: a) the pin is low to power up (enable) the chip b) the E pin is low to gate the data to the output pins For Read operations, if the addresses are stable, the address access time (tacc) is equal to the delay from to output (t). Data is transferred to the output after a delay from the falling edge of E (te). 996 Microchip Technology Inc. DSL-page 5

6 . Standby Mode The standby mode is defined when the pin is high () and a program mode is not defined. When these conditions are met, the supply current will drop from 2 ma to µa..4 utput Enable This feature eliminates bus contention in multiple bus microprocessor systems and the outputs go to a high impedance when the following condition is true: The E pin is high and the program mode is not defined..5 Erase Mode (U.. Windowed ersions) Windowed products offer the ability to erase the memory array. The memory matrix is erased to the all s state when exposed to ultraviolet light. To ensure complete erasure, a dose of 5 watt-second/cm 2 is required. This means that the device window must be placed within one inch and directly underneath an ultraviolet lamp with a wavelength of 257 Angstroms, intensity of 2,µW/cm 2 for approximately 2 minutes..6 Programming Mode The Express Algorithm has been developed to improve on the programming throughput times in a production environment. Up to ten -microsecond pulses are applied until the byte is verified. No overprogramming is required. A flowchart of the express algorithm is shown in Figure -. Programming takes place when: a) CC is brought to the proper voltage, b) PP is brought to the proper H level, c) the E pin is high, and d) the pin is low. Since the erased state is in the array, programming of is required. The address to be programmed is set via pins A-A4 and the data to be programmed is presented to pins -7. When data and address are stable, a low going pulse on the line programs that location..7 erify After the array has been programmed it must be verified to ensure all the bits have been correctly programmed. This mode is entered when all the following conditions are met: a) CC is at the proper level, b) PP is at the proper H level, c) the line is high, and d) the E line is low..8 Inhibit When programming multiple devices in parallel with different data, only need be under separate control to each device. By pulsing the line low on a particular device, that device will be programmed; all other devices with held high will not be programmed with the data, although address and data will be available on their input pins..9 Identity Mode In this mode specific data is output which identifies the manufacturer as Microchip Technology Inc. and device type. This mode is entered when Pin A9 is taken to H (.5 to 2.5). The and E lines must be at. A is used to access any of the two non-erasable bytes whose data appears on through 7. Pin Input utput Identity Manufacturer Device Type* A * Code subject to change H e x 29 8C DSL-page Microchip Technology Inc.

7 FIGURE -: PRGRAMMING EXPRESS ALGRITHM Conditions: Tamb = 25 C ±5 C CC = 6.5 ±.25 PP =. ±.25 Start ADDR = First Location CC = 6.5 PP =. X = Program one µs pulse Increment X erify Byte Pass Fail No Yes Device X =? Failed Last Address? Yes No Increment Address CC = PP = 4.5, 5.5 Device Passed Yes All bytes = original data? No Device Failed 996 Microchip Technology Inc. DSL-page 7

8 27C256 Product Identification System To order or to obtain information (e.g., on pricing or delivery), please use listed part numbers, and refer to factory or listed sales offices. 27C256 9 I /TS Package: L = Plastic Leaded Chip Carrier P = Plastic DIP (Mil 6) S = Plastic SIC (Mil ) TS = Thin Small utline Package (TSP) 8x2mm S = ery Small utline Package (SP) 8x.4mm Temperature Blank = C to +7 C Range: I = -4 C to +85 C E = -4 C to +25 C Access 9 = 9 ns Time: = ns 2 = 2 ns 5 = 5 ns 2 = 2 ns Device 27C K (2K x 8) CMS EPRM 996 Microchip Technology Inc. DSL-page

27C64. 64K (8K x 8) CMOS EPROM PACKAGE TYPES FEATURES DESCRIPTION. This document was created with FrameMaker 404

27C64. 64K (8K x 8) CMOS EPROM PACKAGE TYPES FEATURES DESCRIPTION. This document was created with FrameMaker 404 This document was created with FrameMaker 44 64K (8K x 8) CMS EPRM 27C64 FEATURES PACKAGE TYPES High speed performance - 12 ns access time available CMS Technology for low power consumption - 2 ma Active