Photodiodes CATALOG ^^ //

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1 Photododes CATALOG > 4K > A ^^ //

2 TABLE OF CONTENTS Selecton Gude., Glossary of Terms Used n Ths Catalog, Characterstcs and Use of Photododes,...,,,.,.,,,...,,.,... 3 Relablty.. Precautons for Use 2 Warranty, Replacement Type Devces 3 Reference (Physcal Constants Unt Converson Table for llumnance) 3 Slcon Photododes (UV to Vsble Lght, for Precson Photometry) 4 Slcon Photododes (UV to R, for Precson Photometry) 6 Slcon Photododes (Vsble Lght to R, for Precson Photometry) 8 Slcon Photododes (Vsble Lght/Vsble Lght to R Photometry) 20, 22 PN Slcon Photododes.. GaAsP Photododes 26 GaP Photododes 30 Slcon Avalanche Photododes 32 Dmensonal Outlnes 34 Specally Desgned Photododes and Related Devces, 38 Applcaton Examples :... 40

3 - S723-05, : S2382.! Selecton Gude Photodode Spectral Response Characterstcs (Representatve Example) (Typ- at 25 C) WAVELENGTH (nm) 200 Type Slcon Photododes Features Ultravolet to vsble tght, for precson photometry Ultravolet to nfrared, for precson photometry Vsble lght to nfrared, for precson photometry Spectral Response Characterstcs Range Peak Mark Wavelength Type No, Lsted Page S226,S 227 Seres JS336.S 337 Seres Q S2386.S2387 Seres 8-9 Vsble lght, for general-purpose photometry Vsble lght to nfrared, for general-purpose photometry SQ87.Sl33.S2833etC TOO S 087-0, SH 33-0, etc PN Slcon Photododes GaAsP Photododes [Dffuson Type) GaAsP Photododes (SchottkyType) Hgh-speed response, for optcal communcaton optcal fber data lnk, etc ;S2839,S S226, Sl72.etc S90.S223.etc. Vsble lght cutoff type Q S2506 Large senstve area, hgh ultravolet senstvty S250&O ;; etc. For vsble lght ff 65,36,07,60, Extended red senstvty O 0735,0736,0737,80. Ultravolet to vsble lght G25-02.G 26-02, etc. Extended red senstvty G745, G746G GaP Photododes Ultravolet to green lght G G96,G962, G Slcon Avalanche Photododes (APD) Hgh-speed response and hgh gan S238, S2383. S2384 S

4 Glossary of Terms Used n Ths Catalog Spectral Response The photocurrent produced by a gven level of ncdent lght vares wth wavelength. Ths wavelength/response relatonshp s known as the spectral response characterstc and s expressed numercally n terms of radant senstvty, quantum effcency, NEP, detectvty, etc. Radant Senstvty Ths measure of senstvty s the rato of radant energy expressed n watts ncdent on the devce to the photocurrent output expressed n amperes. t may be expressed as ether an absolute senstvty,.e., the A/W rato, or as a relatve senstvty, normalzed wth respect to the senstvty at the wavelength of peak senstvty, wth the peak value usually taken as 00. For the purposes of ths catalog, the spectral response range s taken to be the regon wthn whch the radant senstvty s wthn 5% of the peak value. Quantum Effcency (Q.E.) Ths s the rato of number of ncdent photons to resultng photoelectrons n the output current, wthout consderaton gven to the ndvdual photon energy levels, resultng n a slghtly dfferent spectral response characterstc curve from that of the radant senstvty. Short Crcut Current (Uh) Ths value s measured usng whte lght of 2856K dstrbuton temperature from a standard tungsten lamp of 00 lux llumnance (00 lux for GaP phofododes). The short crcut current s that current whch flows when the load resstance s and s proportonal to the devce photosenstve area. Tme Response. Rse Tme (tr) Ths s the measure of the photodode response to a stepped lght nput. t s the tme requred for transton from 0% to 90% of the output level. The rse tme depends on the wavelength of the ncdent lght and load resstance. n ths catalog, a GaAsP LED (X» 655 nm) or GaP LED {X = 560 nm) s used as a lght source, and the load resstance s k l. 2. Cutoff Frequency (fc ) Ths s the measure of the hgh-speed phtodode response to snewave-modulated nput lght and used for PN photododes and avalanche photododes. t s defned as the frequency at whch the output of the photodode decreases by 3 db from the low frequency response. The lght source used s a laser dode (X= 830 nm) and the load resstance s 50Q. fc and tr have the followng relaton; tr = 0.35 NEP (Nose Equvalent Power) Ths s the amount of lght equvalent to the ntrnsc nose level of the devce. Stated dfferently, t s the lght level requred to obtan an S/N rato of. The NEP s one means of expressng the spectral response. n ths brochure, the NEP value at the wavelength of maxmum response s used. Snce the nose level s proportonal to the square root of the bandwdth, the NEP s expressed n unts of W/Hz V. NEP Nose Current (A/Hz /a ) Radant Senstvty at Peak (A/W) Dark Current (d) and Shunt Resstance (R 5h) The dark current s the small current whch flows when reverse voltage s appled to a photodode under dark condtons. t s a source of nose for applcatons n whch a reverse bas s appled to photododes as s typcally the case wth PN photododes. To observe the dark current there are two methods observaton of the V/l rato (termed shunt resstance) n the V regon ( 0 mv for the data heren), or observaton of the current at actual appled reverse bas condtons. Maxmum Reverse Voltage (Vr max) Applyng reverse voltages to photoddes can cause breakdown and severe deteroraton of devce performance. Therefore reverse voltage should be kept somewhat lower than the maxmum rated value, Vr max, even for nstantaneously appled reverse bas voltages. Rsh 0 (mv) Dark Current at Vr = 0 mv (A) Juncton Capactance (Cj) An effectve capactor s formed at the P-N juncton of a photodode. ts capactance s termed the juncton capactance and s the major factor n determnng the response speed of the photodode. Ths s measured at MHz for PN types and 0 khz for other types.

5 Characterstcs and Use of Photododes NTRODUCTON Photododes make use of the photovoltac effect the generaton of a voltage across a P-N juncton of a semconductor when the juncton s exposed to lght. Whle the term photodode can be broadly defned to nclude even solar batteres, t usually refers to sensors ntended to detect the ntensty of lght. Photododes can be classfed by functon and constructon as follows. Photodode Types ) PN photododes 2) PN photododes 3) Schottky type photododes 4) Avalanche photododes All of these types provde the followng features and are wdely used for the detecton of the exstence, ntensty, poston and color of lght. Features ) Excellent lnearty 2) Low nose 3) Wde spectral response 4) Mechancal ruggedness 5) Compact and lghtweght 6) Long lfe Ths secton wll serve to ntroduce the constructon characterstcs, operaton and use of photododes. CONSTRUCTON Hamamatsu photododes can be classfed by manufacturng method and constructon nto fve types of slcon photododes and two types each of GaAsP and GaP photododes. Table : Photododes Types Type Planar dffuson type Low Cj planar dffuson type PNN + type PN type Schottky type Avalanche type Constructon P N 5 J^ Features Small dark current Small dark current Fast response Hgh UV senstvty Hgh R senstvty Small dark current Hgh UV senstvty Suppressed R senstvty Ultra-fast response Hgh ultravolet senstvty nternal multplyng mechansm Ultra-fast response Photodode types Slcon photododes /eg, S2386, S2387 seres. \ ^S087, S 33 seres ) GaAsP photododes Slcon photododes (S336 seres, ) \S337 seres t Slcon photododes (S226 seres, \ \S227 seres / PN slcon photododes GaAsP, GaP photododes Slcon avalanche photododes Planar Dffuson Type An S02 coatng s appled to the P-N juncton surface, yeldng a photodode wth a low level dark current. Low-Capactance Planar Dffuson Type A hgh-speed verson of the planar dffuson type photodode. Ths type makes use of a hghly pure, hgh-resstance N-type materal to enlarge the depleton layer and thereby decrease the juncton capactance, thus lowerng the response tme to /0 the normal value. The P layer s made extra thn for hgh ultravolet response. PNN + Type A low-resstance N + materal layer s made thck to brng the N-N + boundary close to the depleton layer. Ths somewhat lowers the senstvty to nfrared radaton, makng ths type of devce useful for measurements of short wavelengths. PN Type An mproved verson of the low-capactance planar dffuson devce, ths type makes use of an extra hgh-resstance layer between the P- and N-layers to mprove response tme. Ths type of devce exhbts even further mproved response tme when used wth reversed bas and so s desgned wth hgh resstance to breakdown anh low leakage for such applcatons. Schottky Type A thn gold coatng s sputtered onto the N materal layer to form a Schottky Effect P-N juncton. Snce the dstance from the outer surface to the juncton s small, ultravolet senstvty s hgh. Avalanche Type f a reverse bas s appled to a P-N juncton and a hgh-feld formed wthn the depleton layer, photon carrers wll be accelerated by ths feld. They wll collde wth atoms n the feld and secondary carrers are produced, ths process occurrng repeatedly. Ths s known as the avalanche effect and, snce t results n the sgnal beng amplfed, ths type of devce s deal for detectng extremely low level lght. THEORY OF OPERATON Fgure (a) shows a cross secton of a photodode. The P-layer materal at the lght senstve surface and the N materal at the substrate form a P-N juncton whch operates as a photoelectrc converter. The usual P-layer for a slcon photodode s formed by selectve dffuson of boron to a th ckness of approxmately u.m and the neutral regon at the juncton between the P and N layers s known as the depleton layer. By varyng and controllng the thckness of the outer P-layer, substrate N-layer and bottom N^ layer as well as the dopng concentraton, the spectral response and frequency response can be controlled.

6 , When lght s allowed to strke a photodode, the electrons wthn the crystal structure become stmulated. f the lght energy s greater than the band gap energy Eg, the electrons are pulled up nto the conducton band, leavng holes n ther place n the valence band (see Fgure These electron-hole pars occur throughout the P-layer, (b)). depleton layer and N-layer materals, and n the depleton layer the electrc feld accelerates the electrons towards the N-layer and the holes toward the P-layer. Of the electron-hole pars that are generated n the N-layer, the electrons, aong wth electrons that have arrved from the P-layer, are left n the N-layer conducton band, whle the holes dffuse through the N-layer up to the P-N juncton whle beng accelerated, and collect n the P-layer valence band. n ths manner, electron-hole pars whch are generated n proporton to the amount of ncdent lght are collected n the N-layer and P-layer. Ths results n a postve charge n the P-layer and a negatve charge n the N-layer. f an external crcut s connected between the P- and N-layers, electrons wll flow away from the N-layer and holes from the P-layers towards the opposte electrode, respectvely. Fgure (a): Photodode Cross-Secton M S 0 POSTVE ELECTRODE = LAYER NEGATVE ELECTRODE n cr (ANODE) \ k DEPLETON LAYER (CATHODE) SHORT WAVELENGTH NCDENT LGHT LONG.WAVELENGTH P-LAYER (b): NCDENT LGHT N-LAYER V Photodode P-N Juncton States EQUVALENT CRCUT The photodode equvalent crcut s shown n Fgure 2. Fgure 2: Photodode Equvalent Crcut Vd: lo: Vo: Voltage across the dode Output current Output voltage Usng the above equvalent crcut and solvng for the output current, we have: lo = ll - d - ' = l _ - s (exp jvd kt Where s: photodode reverse saturaton current e: Electron charge k: Boltzrnann's constant T: Absolute temperature of the photodode ) - r The open crcut voltage V p s the output voltage when lo equals 0. Therefore, we have: Vo[?'"(^ + ) f we gnore ', snce s ncreases logarthmcally wth respect to ncreasng ambent temperature, Vop s nversely proportonal to ambent temperature and nversely proportonal to the log of l_. However, ths relatonshp does not hold for very small amounts of ncdent lght. The short-crcut l s h s the output current when the load resstance R _ equals and Vo equals 0, yeldng: lsh = ll - s [exp e(lsh-rs) kt )- sh-rs Rsh n the above relatonshp, the 2nd and 3rd terms lmt l S h lnearty. However, f Rs s several ohms or lower and Rsh s 0 7 to 0 ohms, these terms become neglgble over qute a wde range. V-l CHARACTERSTCS When a voltage s appled to a photodode n the dark state, the V-l characterstc curve observed s smlar to the curve of a conventonal rectfer dode as shown n Fgure 3 CD. However when lght strkes the photodode, the curve at shfts to and, ncreasng the amount of ncdent lght shfts the characterstc curve stll further to poston n parallel wth respect to ncdent lght ntensty. For the characterstcs and, f the photodode termnals are shorted, a photocurrent lsh or lsh' proportonal to the lght ntensty wll flow n the drecton from the anode to the cathode. f the crcut s open, an open crcut voltage Vop or Vop' wll be generated wth the postve polarty at the anode. Rs Fgure 3: V-l Characterstcs Mr ll_: d: Cj: Rsh: R s : ': Current generated by the ncdent lght (proportonal to the amount of lght) Dode current Juncton capactance Shunt resstance Seres resstance Shunt resstance current

7 Fgure 4: Output Sgnal vs. ncdent Lght Relatonshp (S2386-5K) (a) sh CAT Z5 C ) s D 0 LLUMNANCE (LUX) (b) Vop (AT 25'C ) 600 (sh x Rl) s amplfed by an amplfer A and the use of the bas voltage Vr makes ths crcut sutable for recevng hgh-speed pulse lght, although the crcut has lmtatons wth respect to lnearty. Ths condton s shown n Fgure 6. n the crcut of Fgure 5 (b), an operatonal amplfer s used and the characterstcs of the feedback crcut are such that the equvalent nput resstance s several orders of magntude smaller than Rf, enablng nearly deal sh measurements. The value of Rf can be changed to enable measurements over a wde range. sh f the zero regon of Fgure 3 CD s magnfed, we see, as shown n Fgure 7, that the dark current s lnear over a voltage range of approxmately ±0 mv. The slope n ths regon s termed the shunt resstance (Rsh) and ths resstance s the cause of thermal nose currents descrbed later. n ths catalog, values of Rsh are gven usng a dark current of d wth 0 mv appled. Fgure 5: Photodode Operatonal Crcuts (a) Reverse Bas Crcut >400 E LGHT Vout = AX shxr L -O >3oa (b) Op-Amp Crcut J 00 o o cr o : LLUMNANCE (LUX) o 4 The short crcut current sh s extremely lnear wth respect to the amount of ncdent lght. When the ncdent lght s wthn a range of 0~ 2 to 0" 3 (W), the achevable range of lnearty s 6 to 8 orders of magntude, dependng on the type of photodode and crcut n whch t s used. The lower lmt of ths lnearty s determned by the NEP, whle the upper lmt depends on the load resstance and the reverse bas voltage, and s gven by the followng equaton. LGHT Fgure 6: V-l Characterstcs and Load Lne LOAD LNE WTH BAS APPLED Pmax Pmax : V B ; : Vr : Rl : R : RS : V B + v F () ~ (Rs + RJ RX nput energy at upper lmt of lnearty (W) Contact voltage (V) Reverse bas voltage (V) Load resstance (Q) Radant senstvty at wavelength x Seres resstance When laser lght s condensed on an extremely small spot, however, the actual resstance ncreases, and lnearty deterorates. V OP vares logarthmcally wth respect to a change of amount of lght and s greatly affected by varatons n temperature, makng t unsutable for lght ntensty measurements. Fgure 4 shows the result of plottng sh and V OP as a functon of ncdent lght llumnance. Fgure 5 (a) and (b) show methods of measurng lght by measurng sh- n the crcut shown at (a), the voltage Fgure 7: HGH LOAD LNE LOW LOAD LNE V-l Characterstcs (Expanded Zero Regon) VOLTAGE (mv)

8 s SPECTRAL RESPONSE CHARACTERSTCS As explaned n the secton on prncples of operaton, when the energy of absorbed photons s lower than the band gap energy Eg, the photovoltac effect does not occur The lmtng wavelengths can be expressed n terms of Eg as follows. x = 240 Eg [nm] () At room temperatures, Eg s.2ev for slcon and.8ev for GaAsP, so that the lmtng wavelengths are 00nm and 700nm, respectvely. For short wavelengths, however, the degree of lght absorpton wthn the dffuson layer becomes very hgh. Therefore, the thnner the dffuson layer s and the closer the P-N juncton s to the surface, the hgher the senstvty wll be (see Fgure (a)). For normal photododes the cutoff wavelength s 300 to 400nm, whereas for ultravolet enhanced photododes (e.g. S226 and S336) t s below 90nm. The cutoff wavelength s determned by the ntrnsc materal propertes of the photodode, but s also affected by the spectral transmttance of the wndow materal. For boroslcate glass and plastc resn coatng, wavelengths below approxmately 300nm are absorbed. f these materals are used as the wndow, the short wavelength senstvty wll appear to be lost. For wavelengths below 300nm, photododes wth fused slca wndows are used. For measurements lmted to the vsble lght regon, a green flter s used as the lght-recevng wndow. Fgure 8 shows the spectral response characterstcs for varous photodode types. The BQ type shown uses a fused slca wndow, the BK type a boroslcate glass wndow and the BR type a resn coated wndow. Fgure 8: Spectral Response Characterstcs s?3sf S?3 87V * V \ (at35'c) from the dark current and the photocurrent. n - J\f + s 2 [A] (2) When a photodode s used n an operatonal amplfer crcut such as that shown n Fgure 5 (b), snce the appled voltage s the operatonal amplfer's nput offset voltage only, the dark current may be gnored and n s gven as follows. /4kTB,n = lj " /t^t Where k: Boltzmann's constant T: Absolute temperature of the photodode B: Nose bandwdth When a bas voltage s appled as n (3) Fgure 5 (a), there s always a dark current. For a bas voltage of to 2 V or greater,» j, so that n s gven as follows. n s = /2ql d B [A] (4) Where q: Electron charge d: Dark current B: Nose bandwdth» 0.026/Rsh or l _» d, Wth the applcaton of ncdent lght, l _ exsts and f t the above equatons (3) and (4) are replaced by the followng equaton for shot nose. s /2ql L B (5) The ampltudes of these nose sources are each proportonal to the square root of the measured bandwdth B, so that they are expressed n unts of (A//Hz). The lower lmt of lght detecton for a photodode s usually expressed as the ntensty of ncdent lght requred to generate a current equal to the nose current as expressed n equatons (3) or (4). Essentally ths s the nose equvalent power (NEP) / J, S33G S 337 S 33 \ /(WTH \l \ FLTER) t : BQ TYPE J / \ S2 n / \ *. \ BK AND' BR TYPE r V WAVELENGTH (nm) NOSE CHARACTERSTCS Lke other types of lght sensors, the lower lmts of lght detecton for photododes are determned by the nose characterstcs of the devce. The photodode nose n s the sum of the thermal nose (or Johnson nose) j caused by the shunt resstance R S h and the shot nose s resultng \ \ \ V NEP [w/yhz] (6} Where n: nose S: peak radant senstvty Fgure 9 shows the relatonshp between NEP and dark current, from whch can be seen the agreement wth the theoretcal relatonshp. The lght detecton lmt for DC couplng as shown n Fgure 5(b) s nfluenced by the amplfer's thermal drft, low-frequency flcker nose and, as wll be descrbed later, gan peakng. Thus the lmt s actually greater than the NEP. f the ncdent lght can be perodcally swtched ON and OFF by some means and detecton performed n synchronzaton wth ths swtchng frequency, t s possble to elmnate the nfluence of nose outsde ths measurement bandwdth (refer to Fgure 0). Ths technque can allow the actual measured detecton lmt to approach the detector's theoretcal NEP.

9 Fgure 9: Relatonshp of NEP to Dark Current (S226-5BK) Ta = 25C NEP=A. s=o.sa/w THEORETCAL LNE DARK CURRENT at V,=lOmV (A) Fgure 0: Synchronous Measurement Method LGHT UNDER MEASUREMENT CHOPPER MAN PHOTODODE REFERENCE PHOTODODE When compared wth photododes not havng an amplfcaton mechansm, avalanche photododes exhbt addtonal excessve nose components caused by varatons n the avalanche amplfcaton process. Usng the gan M and a lght current l _ and excessve nose factor FwhenM = expresson. n equaton (4) above, we have the followng sgnal currentflowng n a photodode crcut s determned by the number of photovoltacally generated electron-hole pars and that the applcaton of a bas voltage does not result n the loss of photoelectrc converson lnearty. Fgure shows an example of a reverse bas connecton. Fgures 2 and 3 show the effects of bas voltage on rse tme and lnearty lmts, respectvely. Whle applcaton of a reverse bas to a photodode s very useful n mprovng response speed and lnearty, t has the accompanyng dsadvantage of ncreasng dark current and nose levels along wth the danger of damagng the devce by excessve appled reverse bas voltage. Thus, care s requred to mantan the bas wthn the maxmum ratngs and to ensure that the cathode s mantaned at a postve potental wth respect to the anode. For use n applcatons such as optcal communcatons and remote control whch requre hgh response speed, the PN photodode provdes not only good response speed but excellent dark current and voltage resstance characterstcs wth bas appled. Fgure 4 shows an example of the actual connecton shown n Fgure (b) wth a load resstance 50 f. The ceramc capactor C s used to enable a reducton of the bas supply mpedance, whle resstor R s used to protect the photodode. Ths resstor s selected such that the voltage drop caused by the average photocurrent s suffcently smaller than the bas voltage. Note that the photodode and capactor leads, coaxal cable and other wres carryng hgh-speed pulses should be kept as short as possble. Fgure : Reverse Bas Connecton Example n /2ql _M 2 FB n ths expresson, for M = 0 to 00, F may be approxmated as follows. F = M* The exponent x s known as the excessve nose ndex and s n the range of approxmately 0.3 to 0.5. The advantage to usng an avalanche photodode s the ablty to use a small load resstance and a small nput resstance n the followng stage n comparson wth normal photododes. Ths enables not only an operatng speed advantage, but a reducton n thermal nose generated by the nose resstance as well, thus enablng detecton of extremely small sgnals. For detals, refer to the separate data sheet. REVERSE BAS Snce photododes generate a voltage by vrtue of the photovoltac effect, they can operate wthout the need of an external power supply. However, speed of response and lnearty can be mproved by the use of such an external basng source. t should be borne n mnd that the Fgure 2: Rse Tme vs. Bas Voltage 0" 7 -lo-h 0"* 0" 0 0 0* REVERSE VOLTAGE (V)

10 \ Fgure 3: Lnearty Lmts 0" V R = 20V the Ct x R L tme constant s small, t s the major factor that determnes the response speed. Fgure 5 shows an example of the response waveform of a photodode and the frequency response of a PN photodode. Fgure 5 (a): Photodode Response Waveform Example =9 oo o- 6 0' 0 J 0 s 0' 0 s LLUMNANCE (LUX) LGHT NPUT- OUTPUT WAVEFORM T\» T 2 HZ Fgure 4: Connecton to Coaxal Cable LGHT son COAXAL CABLE n OUTPUT WAVEFORM T <C T 2 the case of a PN or avalanche photodode, Ct s partcularly small. Also these types are desgned for a low level of carrer generaton outsde the depleton regon, thus sutable for hgh-speed lght detecton. Fgure 5 (b): S2386-8K Response Waveform (V R = 0V, R L = kq) RESPONSE SPEED The response speed of a photodode s a measure of the tme requred for the accumulated charge to become an external current and s generally expressed as the rse tme tr, fall tme tf or out off frequency fc. tr s the tme requred to rse from 0% to 90% of the normal output value and s determned by the followng factors. ) Tme constant n determned by the termnal capactance of the photodode Ct and the load resstance Rl. {Ct s the sum of the package capactance and the photodode juncton capactance Cj} 2} Dffuson tme T2 of carrers generated outsde the depleton layer. Fgure 5 (c): Vr = ov \, - nn f TME fq.sfs/dv.) S2840 Frequency Response (V R = 5V, R L = 50S"2) D '0 Vr = 5V Rl= 50r :::),- n f the Ct x Rl tme constant t s the governng factor, tr s gven as follows. tr 2.2T = 2.2Ct x Rl To shorten tr, the desgn must be such that ether Ct or RL s made small. Cj s area A and nversely proportonal to the second to thrd proportonal to the lght senstve root of the resstvty p of the substrate materal and reverse bas Vr. Cj * A{(Vr + 0.5) xp} ~^~ % Therefore, to acheve a fast response tme, a photodode wth a small A and large p should be used wth reverse bas appled. However, reverse bas also ncreases dark current so cauton s necessary for low-lght-levef detecton. The carrers generated outsde the depleton layer occur when ncdent lght msses the P-N juncton and strkes the surroundng area of the photodode chp and when ths lght s absorbed by the substrate secton whch s below the depleton area. The tme t2 requred for these carrers to dffuse may be greater than several us. When J-] _ FREQUENCY (Ml 7 Fgure 6: Rse Tme vs. Load Resstance wth Photosenstve Area as Parameter 0' 0 3 0" LOAD RESSTANCE (U)

11 TEMPERATURE CHARACTERSTCS Ambent temperature varatons greatly effect photodode senstvty and dark current. The cause of ths s varaton n the lght absorpton coeffcent whch s temperature related. For long wavelengths, senstvty ncreases wth ncreasng temperature and ths ncrease become promnent at wavelengths longer than the peak wavelength. For short wavelengths, t decreases. Snce ultravolet enhanced photododes are desgned to have low absorpton n the short wavelength regon, the temperature coeffcent s extremely small at wavelengths shorter than the peak wavelength. Fgure 7 shows examples of temperature coeffcents of photododes senstvty (l S h) for a varety of photododes types. Fgure 7: Temperature Coeffcent vs. Wavelength SCHOTTKY TVPE GaAsP BOO 900 WAVELENGTH (nm) 000 hoc 200 The varaton n dark current wth respect to temperature occurs as a result of ncreasng temperatures causng electrons n the valence band to become excted, pullng them nto the conducton band. A constant ncrease n dark current s shown wth ncreasng temperature. Fgure 8 ndcates a two-fold ncrease n dark current for a temperature rse from 5 C to 0 C. Ths s equvalent to a reducton of the shunt resstance Rsh and a subsequent ncrease n thermal and shot nose. Fgure 9 shows an example of the temperature charcterstcs of open-crcut voltage V p, ndcatng lnearty wth respect to temperature change. Fgure 8: Dark Current Temperature Dependence (S2387) Fgure 9: V Q p Temperature Dependence (S2387) V, loolux 600 _ \ 2856K \* > 400 g \. a, 300 \. xo >v 00 \ AMBENT TEMPERATURE (X) USE OF OPERATONAL AMPLFERS ) Transmpedance Crcut Fgure 20 shows a basc crcut connecton of an operatonal amplfer and a photodode. The output voltage V from DC through the low-frequency regon s 80 degrees out of phase from the nput short crcut current. The feedback resstance Rf s determned by sh and the requred output voltage Vo. f, however, Rf s made greater than the photododes nternal resstance Rsh, the operatonal amplfer's nput nose voltage and offset voltage wll be multpled by (Rf/Rsh + ). Ths s supermposed on the output voltage, and the operatonal amplfer's bas current error (descrbed later) wll also ncrease. f there s an nput capactance, the feedback capactance Cf prevents hgh-frequency oscllatons and also forms a lowpass flter wth a tme constant Cf x Rf value. t should be chosen wth regard to the desred transmpedance and bandwdth. f the nput lght s smlar to a dscharge spark, and t s desred to ntegrate the amount of lght, Rf can be removed so that the operatonal amplfer and Cf act as an ntegratng crcut. Fgure 20: Basc Photodode Connecton Example * Cj * > Rsh * 00pFT 00MQ Rf 0MQ Cf lopf en) A ov, AMPLFER GAN-BANDWDTH PRODUCT: MHz* * Values commonly avalable. However, a swtch s requred to dscharge Cf before the next ntegraton AMBENT TEMPERATURE fc) 2) Bas Current Snce the actual nput mpedance of an operatonal amplfer s not nfnte, there s some bas current that flows nto or out of the nput termnals. Ths may result n errors, dependng upon the magntude of the detected current. The bas current whch flows n an FET nput operatonal amplfer s sometmes lower than 0. pa. Bpolar operatonal amplfers, however, have bas currents n the order

12 and m Cf Cf of several na or even several hundred na. However, the bas current of an FET operatonal amplfer generally ncreases two-fold for every ncrease of 0 C n temperature, whereas that of bpolar amplfers decreases wth ncreasng temperature. Therefore, the desgn of such crcuts to operate at hgh temperatures should consder the use of bpolar amplfers. As s the case for offset voltage, the error voltages attrbutable to the bas current can be adjusted by means of a potentometer connected to the offset adjustment termnals. Futhermore, leakage currents on the PC board used to house the crcut may be greater than the operatonal amplfer's bas current. Consderaton must be gven to the crcut pattern's desgn and ts parts replacement. Addtonally, the use of Teflon termnals and guardng may be requred. However, the operatonal amplfer chosen s of utmost mportance. A lst of recommended FET and bpolar types s gven on page 4. 3) Gan Peakng The frequency response of a photodode operatonal amplfer s determned by the tme constant Rf x Cf. However, for large values of juncton capactance (.e., nput capactance} a phenomenon known as gan peakng wll occur. Fgure 2 shows an example of such a frequency response, from whch t can be seen that the output voltage ncreases sharply n the hgh frequency regon, causng sgnfcant rngng n the output voltage response to pulsed lght nput. Ths gan operates n the same manner wth respect to operatonal amplfer nput nose and may result n abnormally hgh nose levels (see Photograph (c)). Ths occurs by vrtue of the fact that the reactance of the nput capactance and that of the feedback capactance on the operatonal amplfer crcut may jontly form an unstable amplfer wth respect to nput operatonal amplfer's nose. n such a case, loss of measurement accuracy may result. Fgure 2: Gan Peakng (a) Frequency Characterstc (b) Lght Pjlse Response f --~--! ft -yo; y :, -.-: V 7L00 ktt *!- ; t ; : f V v l /yv...['!.; tyl >«j (c) Frequency Characterstc of Nose Output EsSH w. HM( c; «nput pulsed lght Output waveform Upper trace : Lower trace : = 0pF Cf^OpF = 0pF Vertcal axs :20dB/Dv Horzontal axs : 2kHz/Dv 4) Gan Peakng Analyss and Elmnaton To acheve a wde frequency characterstc wthout gan peakng and rngng phenomena, t s necessary to select the optmum relatonshp between the photodode, operatonal amplfer, and feedback element. Wth the photodode, t s effectve to reduce the juncton capactance Cj, explaned n the secton on response speed, n ths case as well. Wth the operatonal amplfer, the hgher the speed and the wder the bandwdth, the less the gan peakng occurs. However, f an adequate nternal phase compensaton s not provded, oscllaton may be generated as a result. As feedback elements, not only the resstance, but also the capactance should be connected n parallele, as explaned prevously, n order to avod gan peakng. The gan peakng phenomena can be explaned as follows, usng the crcut shown n Fgure 20. As shown n Fgure 22, for the low-frequency regon, the crcut gan of the operatonal amplfer s determned smply by 0 the resstance rato of Rsh to Rf. Startng at the frequency t-2c7r^, gan ncreases wth frequency as shown n regon, but peakng wll not occur under the condton of R f <Rsh. Next, at the frequency \? = 2 jtc7r;artd above, the crcut gan of the operatonal amplfer s determned by the rato of Gj and Cf (regon ( )). At the pont where frequency f 3 ntersects the open-loop gan frequency response at rolloff (6dB/octave) of the operatonal amplfer, regon s entered. n ths example, f f f, 2 f 3 correspond to 6Hz,.6kHz and 00kHz respectvely. f Cf s made pf, f 2 shfts to f2 \ and crcut gan ncreases further. What should be noted here s that, snce the settng of crcut gan n regon exceeds the open-loop gan curve, regon ( ) actually does not exst.

13 As a result, rngng occurs n the pulsed lght response of the operatonal amplfer crcut and nstablty results (see Fgure 2}. To summarze the above ponts: a) When desgnng Rf and Cf, f 2 should be set to a value such that regon CD n Fgure 22 exsts. b)when f 2 s postoned to the rght of the open-loop gan Sne of the operatonal amplfer, change the operatonal amplfer whch has hgh frequency at whch the gan becomes (unty gan bandwdth), and set regon CD. The above measures should prevent rngng. However, n the hgh-frequency regon CD, crcut gan exsts, and the nput nose of the operatonal amplfer and feedback resstance nose are not reduced, but rather, dependng on the crcumstances, may even be amplfed and expressed as output. The followng method can be used to prevent ths stuaton. c) Replace a photodode wth a small Cj value. n the example shown n the fgure, the rato of Cj to Cf should be close to. Usng the above procedures, the S/N deteroraton caused by rngng and gan peakng can usually be solved. n a separate method, connectng from several hundreds pf to several nf or more of load capactance to the output of the operatonal amplfer, for example by connectng a coaxal cable of several meters or more and capactor, can generate oscllaton n some types of operatonal amplfers, so the capactance load must be set as small as possble. Fgure 22: Graphcal Representaton of the Gan Peakng Phenomena FREQUENCY(Hz) Relablty f used wthn the specfed operatng ratngs, photododes wll exhbt vrtually no loss of senstvty. A loss of senstvty can often be attrbuted to package, lead or flter falure. Package leakage at hgh temperatures and humdty, n partcular, often causes a lowerng of the shunt resstance. Therefore, ceramc case photododes have a somewhat lmted temperature and humdty range. However, metallc case types feature excellent resstance to ambent humdty. Photododes wth flters are greatly affected by the nherent resstance of the flter to envronmental condtons (refer to Fgure 23 and 24). These factors must be taken nto consderaton when usng and storng photododes. Hamamatsu photododes are subjected to relablty testng based on Japanese ndustral Standards (JS), wth consderaton gven to EAJ (Japan Electronc Machnery Assocaton), ML (U.S. mltary) and EC (nternatonal Electrcal Standards Commttee) standards as well. The basc applcable standards are lsted below and n Table 2, JS-C702 EAJ-SD-2 M (Envronmental testng methods and endurance testng methods for dscrete semconductor devces) (Envronmental and lfe testng method for dscrete semconductor devces) L-ST D-750 B (Test m et h ods fo r sem co n d ucto r d e- lec-pub. 68 vces) (Basc envronmental testng procedures) Table 2: Relablty Testng Table Tested tem Test Condtons Crtera Solder heat resstance Solderablty 230 C for 5s Applcaton ol solder Thermal shock Temperature cyclng Temperature /hymdty cyclng Hermetc sealng Shock Natural droppng Vbraton Termnal strength 00 Cfor 5s too Cfor 5s (lqud), 5 cycles T stg (Mn.) to T stg (Max.) (gas), 5 cycles - 0 C to 65 C (90 to 98%), 0 cycles Helum gas test for mnute leaks and bubble test for large leaks 00G for 6ms, XYZ drectons, 3 tmes each From 75cm onto wooden board, 3 tmes 00 to 2000Hz, 20G.XYZ drectons Pullng up to 0.5kg for 5s; twstng 3 tmes, bendng 2 tmes Salt water spray 35 C, 5% soluton for 24 hours Contnuous operaton Pressure cooker test Ant-solvent Hgh-temperature storage Resstance to humdty Deteroraton n performance Low-temperature storage Room temperature and T pr (Max.) 2 C (00%, 85%) and other condtons sopropyl alcohol, trchloroethylene, acetone, etc. 260 Cfor 0s Deteroraton n performance Deteroraton n performance Deteroraton n performance Deteroraton n performance Hermetc sealng Mechancal and performance changes Mechancal and performance changes Mechancal and performance changes Termnal damage, etc. Case corroson, lead rustng Deteroraton n performance Deteroraton n performance Changes n markng and pantng 40 C/95%, 60 C/95%, 85 C/85% Tstg (Mn.) T stg (Max.) Deteroraton n performance Deteroraton n performance

14 Fgure 23: Hgh-Temperature/Humdty Storage Testng Example - oo 8.; z: 40 S2386-5K (METAL CASE) S (WTH FLTER) Precautons for Use Wndow Care should be taken not to touch the wndow wth the bare hands, especally n the case of UV detecton snce foregn materals on the wndow can serously affect transmttance n the UV range. Ethyl alcohol should be used to clean the lght wndow. Other type cleansng agents could cause deteroraton of the devce's resn coatng or flter and should be avoded. 2C TEMPERATURE: 60 C HUMDTY:95% 0' 0? s STORAGE TME (h) Fgure 24: Hgh-Temperature Operaton Testng Example Lghtly wpe drt off the wndow usng ethyl alcohol. 00? 80 UJ ^ 60 < X o jz 40 S S2386-5K ^^^ 20 TEMPERATURE: 80tJ 0' 0' 0' OPERATNG TME (h) Solderng Snce photododes are susceptble to damage from excess heat, care must be gven to temperature and dwell tme when solderng such devces. As a rule, meta case devces should be soldered at 260 C or below wthn 0 seconds and ceramc case devces at 260 C or below wthn 5 seconds. For solderng small devces, some form of heat snkng such as the use of a par of tweezers to hold the devce leads whle solderng s also recommended. mfufff Mount ceramc case types 5 mm mnmum away from any surface and solder at 260 C maxmum for 5 seconds maxmum tme. Use tweezers, etc. as a heatsnk when solderng small photododes. Package Maxmum Solderng Temperature PC) Maxmum Solderng Tme m Metal Case Remarks Ceramc Case mm or more removed 2 Plastc Case (Molded Package) mm or more removed

15 Lead Handlng Care should be taken to keep wthn the recommended mechancal lmts: 0.5 kg pullng stran for 5 seconds maxmum, two 90 C bends and three twsts of the devce leads at 6mm mnmum away from the body. Reference Physcal Constants... Constant Symbol Value ' > Electron Charge e or q.602 x0" 9 C Speed of Lght n Vacuum c x TO 8 m/s Planck's Constant h x0" 34 Js Boltzmann's Constant k.38 x0" 23 J/K Room Temperature Thermal Energy ev ev Energy ev.602 x 0" 9 J Wavelength n Vacuum Correspondng to ev (.240) nm (um) Delectrc Constant of Vacuum Delectrc Constant of Slcon Delectrc Constant of Slcon Oxde o x 0-2 F/m s approx. 2 - Em approx. 4 - Energy Gap of Slcon Eg approx..2 (Ta = 25 C) ev Unt Converson Table for llumnance tux lx(m/m 2 ) photo ph (lm/m 2 ) foot-candle fc (m/ft 2 ) watt per square centmeter* *" W/cm x0" x x 0" x x x 0" x 0.076x x x X0.9 x0 4 * Total rradance (measured value) by the CE standard lght source "A". Warranty As a general rule Hamamatsu photododes are warranted for one year after delvery. The warranty s lmted to replacement of the faulty devce. t does not cover cases of operatonal fa lure caused by accdent or msuse of the devces. 3

16 Slcon Photododes (UV to Vsble Lght, for Precson Photometry Type No. <s>\ ul ' lne Package (mm) S226 Seres (Metal Case) Photosenstve Surface Sze (mm) Effectve Area (mm 2 ) Spectra! Response Range : (nm) Peak Wav^ \ length (nm) Peak Wavelength Characterstcs (25 C) Radant Senstvty (A/W) S226-8BQ a TO-8.X..2-8BK BQ x BK TO BQ x BK BQ TO x S227 Seres (Ceramc Case) 200nm 633nrn 930nm - He-Ne GaAs Short Crcut Current st!. 00 lux Mn.. (ua> j Typ, (MA) S227-6BQ X5.X BR BQ ,5 6x X BR BQ X0. 5.8X BR , Q 5X6.5 0x BR , ; Spectral Response 3.7 fatas'cj (A) Wndow materals are K: Boroslcate glass Q: Fused slca R: Resn coatng 400 eoo soo WAVELENGTH {nm} Temperature Characterstc of sh +.5 " ( ) See pages 34 to 37. u. u. 8 a o '^ < tz % -.0-2,0 9 4C 6C>0 StC WAVELENGTH (nm)

17 (W/Hz. Characterstcs (at 25 C) cx, ^"ST Shun. Resde. R sh ggg?. Current Ture d V D = tomv Max. Dependence of d Typ Mm. V R = tomv (pa) (TmesrC) (GO) (Gl) flse,^ tance, Cj \ V ^ OV (PF) <ps) NEP J yp- Reverse Voltage VR max Absolute Maxmum Ratngs Temperature Range H Operatng Storage ( ) (V) (-C) n ( C> Type No ,5 3.7 x 0"" S226-8BQ BK BQ X0" BK BQ X0* BK XT0" B ,5 5.2 X0-* BR BQ ,5 3.7 X0-' BR BQ X0* BR BQ X0" BR Response Tme vs. Load Resstance (atv.^ov.gs'c) Dark Current vs. Reverse Voltage fel25*c! r R. 0"' *»' E as ^ > [$9 b V >6B.^p^TT <^ ^ c ^^^^l^r^ a.*s^\l. o-" 'm 0" LL ^6 L^ *B --! 0' 0' TO* LOAD RESSTANCE (lj c- 0' 0"' REVERSE VOLTAGE {V) to Shunt Resstance vs. Temperature ^^vtv -.' V p a',* L-, v - : 0" _ c; ^s^sasas rs.^n^^ XS& ' g 0'. ^ S^ E??l v\?v. r ' s vsofe* -t «! Lnearty z 0-* n o-«2356k FULL LLUMNATON ( m 25-C) R «=*0O. -00Q GS O 5 0 s C -2D +2Q AMBENT TEMPERATURE CO 0"* /; REFEFTON EPVAL LES. 0-" 0"'" TO " 0,? 0 0 a o- B o-" to-' o- RADlANT FLUX(W) E

18 O-O l LEO M,n Slcon PhOtOdodeS (UV to R, for Precson Photometry) ut ' lne Package (mm) S336 Seres (Metal Case) Photosenstve Surface Sze Effectve Area (mm) (mm 2 ) Spectral Response Range (nm) Peak Wavelength (nm) Peak Wavelength Characterstcs (25*C) Radant Senstvty (MrVj Mm. 200nm S336-8BQ o TO-8.X..2-8BK BQ X SBK TO BQ , 3.6X BK BQ -8E UP V-O S337 Seres (Ceramc Case) o.oe 0, * 3-D S337-6BQ 2.7x5.x Short Crcut. Current 633nm 930nm <sv 00,u * He-Ne GaAs \ -, Laser ; Typ, (ua) (ua) BR <B ,5-33BQ 6x X2,4 5, BR , , BQ X0. 5,8X BR BQ X6.5 0X BR Spectral Response 7.7 at25'c) C-.6 H337-! H > h C 0.4 w z B " 0-3 < 0.2 S33 -BQ -S33 S3 BQ Sl33T-BQ f~st33b-bk S337-BR (A) Wndow materals are K: Boroslcate glass O: Fused slca R; Resn coatng 9C 4() «)0 m30 WAVELENGTH (nm) Temperature Characterstc of sh f ) See pages 34 to 37, / n eoc spa WAVELENGTH (nm}

19 Mm. Shunt (Gl) g^n ' r ' (0. Characterstcs (at 25,J C) Dark Ter^ra " Resstance. R sh [ Current ture d Depend- V H = 0mV V n = lomv enceolfd R Max. Ty P. (pa) (Tmes/ a C) (GQ) fance, Cj V R = OV (PF) Rs«Tm«v * ov ft L -w NEP Reverse Vo Stage V R max (V) Absolute Maxmum Ratngs Temperature Range Operatng ( C) Storage ( C) Type No ,8 X0' S336-8BG SEK BQ X0'S BK 5 D tl\j r DU BQ X0* x0"'* too -44BK BG , X0',S 25 0,4 65 0,2 8.X Or" X S337-6BQ BR Q BR " BQ BR x ff * BQ BR Response Tme vs. Load Resstance ( at V. _ D V.?S c. * Dark Current vs. Reverse Voltage (Typ, at 25 C) D 0" 0' LOAD RESSTANCE \\l) 0"= 0-0' REVERSE VOLTAGE (V) * Shunt Resstance vs. Temperature,,, (st25 c.v B = 0mV) J Lnearty 0" 0 ' Tyj. 0; 2a: FU >6K A. LLUMNATON K-on to- j/r t = 0- jp S o 8 -SO AMBENT TEMPERATURES) 0"" ':: ' c 0 lf 0 < \Q- r 0 3EFER TO NEP VALlJES lc 0 "!) RADANT FLUX(W) ' 0 * 0 7

20 Slcon Photododes (Vsble Lght to R, for Precson Photometry] Type No. a Photosenstve Surface Spectral Response Outlne S2386 Seres (Metal Case) S2386-8K -8L -5K -44* o & Package (mm) TO-8 TO-5-45 K -8K m TO-8 S2387 Seres (Ceramc Case) Sze [mm).x. 2.4X X X x5.8 Effectve Area (mm 2 ) S2387-6R 2.7X5.X Range (nm) Peak Wavelength (nm Characterstcs (25 C) Typcal Radan Senstvty (AAV) Peak Wavelength 560nm GaP LED 633nm He-Ne Laser 930 nm QaAs LED Short Crcut Current sh, t OO lux -33R 6X X R <B 8.9X0. 5.8X R m 5X6.5 0X Mn. (MA) 4.4 ( M A) 5.5 Spectral Response { al25'c) Wndow materals are K: Boroslcate glass L: Lens type boroslcate glass R: Resn coatng 4O WAVFLENGTH (nm) Temperature Characterstc of sh ( > See pages 34 to 37, SOD WAVELENGTH {run} 8

21 Tempara- enoe ' ' qfanrp j j : Dark Current d ; V = lomv f Max. <pa) Characterstcs (at 25 ; C) Shu D t pq j Re Juncton l tuw nessrance, ture H S. h CaoaaU Capac Depend- V D -0mV tarce. Cj of d V Mn. Typ- R =0V (Tmes' C) (G) (G l) (PF) Rse Tme k R, = k Typ (MS) NEP T VP- (W/Hz Absolute Maxmum Ratngs Reverse Temperature Range Voltage V n max Operatng Storage (V) Type No S2386-SK xo" XCT 6 -SK " X0-* ~44K X0-45K x0* 8K 48L X0' S2387-6R X0",S -66R X0'* -00R -33R Response Tme vs. Load Resstance (TyPLalV. xov. 25CJ <3 0 LL 5 - S' *.. \jc\ / jv! : : ~~A~ s* jns % s>- : U;.s sw^j / S to - C ' AA -yf&-^ ' - ; t/jflra r Dark Current vs. Reverse Voltage n: -.'_ ft' j ascj -' L- -.' y\ ~ < j" '." " ' a 3 jfejjf - --< *- «.^r 4 4 ^ fe^ '-', M; CC 0'= 3.? M. #^ -.-- fr ~ ] N " OAD RESSTANCE ()..! 0" ff w 0 REVERSE VOUAGE :V) Shunt Resstance vs. Temperature (Typ S 2S'C) AMQENT TEMPERA" JHh (Cj to- * 0-" o,j o-,: o-" o o ' 0-- HADTANT FLJX(W) 9

22 low Slcon Photododes (Vsble Lght/Vsble Lght to R Photometry) Type No, Features Outlnes Wndow Materals S087-0 For vsble lght to near Ft /R S087 For vsble lght S For vsble lght, last response S284 Chp can«f pro*. to' v.sbte Egnt re nezr R /R Photosenstve surface Spectral Response Characterstcs (25 C) Sze (mm) Effectve Area (mm').3x.3.6 Range Mark (nm) Peak Wavelength (nm) Typcal Radant Senstvty (A/W) Peak Wavelength 560nm GaP LED 633nm He-Ne Laser 930nm GaAs LED 320 Q0/A /V Q/B ,2 -.3X.3, /A , S264-0 Chp carrer type.vstoe lght cutoff type /F /C ST33-0 For vsble tght to near R S33- for v*w l«gll 0 near H, last resoonse ST33 For vsble lght S33-03 For vsble lght,!ast response S33-02 For vsble lght, hgh senstvty ST33-2 Fry vsble gnt. h.q n saavy, gn speed Far vs b's Hohl to near R. '-gl sa«etl low R /R /v 2.4X /A ,35 0, /B 320-&40/B , , S33-4 otvunry /R /D , S33-05 For vsble lght, hgh -speed R rato,/v /B ,2 - S Fof vsble tght to near R, SP case /R S For vsble lghl to near B, SP case $ For vlblftlghl. fast resporse, SP case S For vsbtfl tght. SP case S Fof v.'jwfl hjht, rgr spt&d, hgl- sertsjvty. SP J.r /V 2.4X /A /B /B S40 Fo nkfujtd kgnt eoropacl fltwy mt (S *-p«pp WV.3X.3.6 S2833 For vsble lghl. epoxy mold 4-pn DP wv 2.4X /B Spectral Response 07 (Tyo.aas'ct -"*\ ( 5 See pages 34 to 37 for outlnes. Wndow materals are R: Resn coatng V: Vsble compensatng flter f y ft V /'' **** : * j t- t t \ -c V ^D ^ " B t V t \ f/ \ fff 20Q BOO WAVELENGTH [nm] t \ \, L * V f\ \ t \ %J Temperature Characterstc of sh +?0 ftvp.aosc F: Vsble lght cutoff flter * mark ndcates newly lsted products. d +.o r> +0.S F?-0.5 fe -t GOO 000 WAVELENGTH (nm)

23 = + " ', nfrared Senstvty Rato (%) Shot Crcut Current, sh 00 lux Temperature Dependence of l s h (%TC) Characterstcs (at 25-C) Dark Current d V R =V Max. (PAJ Temperature Dependence of d Typ {Tmes^C} Shunt Resstance, R s h V R = 0mV Mn. (GO) (Gl) Juncton Capactance,. Cj V R =W Typ (PF) Rse Tme tr V H = ov 7 yp, (US) Reverse Voltage V H max (V) Absolute Maxmum Ratngs Temperature Range Operatng rc) Storage co Type No. S S S S264.0 S S ST ST POO S S S S S TO S S ST S 787* S DO 0,5 S40 -ao ,5 S2833 Response Tme vs. Load Resstance Dark Current vs. Reverse Voltage r lo-t» auscl " 0-e B-" UJ 3 -\ «-tz-_^l- to-" f ^^TaT^ & "*^,f 4B33 p""" 0 ~> V>dm_ ST* -J W" l.qao RESSTANCE (C) REVERSE VOLTAGE (V) Shunt Resstance vs. Temperature rryp.atv«=lqn>v) *» Lnearty (Representatve Example) (al25=c) SO AMBENT TEMPERATURE ( r C) 0-' TO-" 0 ' P" = 0' D' 0' 0* to a RADANT FLUX(W) 2

24 2 ' PN Slcon Photododes () Type Mo. Features 'll /v r' Wndow : Ma:era 3 Package Photosenstve Surface Sze (mm) S J S2839 S2840 SH90 S90-0 S90-O3 Ultra- hon speed response. **, TO-8 '' K low bas type (3 p n ) Hgh-speed response Hgh-speed response, lens Hgh-speed response S90-04 Low capactance, lens wndow /L TO SH90-D4 3-cn case TO-B 0/L ':pn S223 S 2 2,4 x 2.3mm senstve area 3-0 3,6 x 3.6mm sensmve area Vstfe lght cutoff epoxy mold ^0.4 4> q Effectve Area Spectral Response Peak Range : Waye. length (mm'") (nm) (nm) Characterstcs fat 25" C) Radsanl Senstvsy (A.'W) 633nm He-Ne Laser 930nm GaAs LED Short Crcut Current sh. 00 lux Mn foa) ^ a O/K 0/L TO O/K TO-8.X /K TO-5 Hgrt mmunty d amben; S25O6-0.fluoresced! lghtng /M Epoxy mold S C ear epoxy mo d 2.4 x x X , Peak Wavelength fyp- (ja> , ,0 Spectral Response (Representatve Example) (Tyf> ol2$'cl WAVELENGTH (nm) $> See page 34 to 37 for outlnes. Wndow materals are K: Boroslcate glass L: Lens type boroslcate glass F: Vsble lght cutoff flter M: Epoxy mold mark ndcates newly lsted products. Temperature Characterstc of sh 5m * 5-0,6 a LU S= / *w 600 eoo WAVELENGTH (nm!

25 Ca lance. : Dark Current d Max. tya s v) 0.5 (Vp = 5 V) 0.5 (Vr = 5 V) 0.3 (Vh 5 V) 2 (Vft -0 V) 3 (Vr =0 V> 0 (Vr = 20 V 20 (Vr - 20 V) Temperaj ' Depend- : enceof ^ Typ (Tmes/ C) (Vh *> 2 V).5 Characterstcs (at 25'"' C) Juncton P ac^ Cj (pf) Cutoff Frequency FC (MHz J 3 40 (Vn =5 Vl (Vf 5 V).5 (Vr = 5 V 2 (Vr b V) 4 (Vr > V) 0 (Vr =0 V) 3 (Vr =0 V) 0 (Vr = 2Q V 20 (Vh - gq V> 6 (Vn =2 V> 50 {Vr = G V) 50 (Vr =5 V> 50 (Vr = 5 V\ NEP (W/Hz *] 6,0X0* (Vn = 5 V) 4.0X0 B (Vr = b V> 3,6 * 0 (Vh xo s X0 5 (Vr =D V) (Vd =0 V> 20 Va =0 V) 30 _(Vh 20 V 20 (Vr = 20 V) 9.9x0 5 <Vr =0 V) $rel.2x0 "" (Vr =20 V) 25 (Vh - S VJ x0",a [Vp =2 V ; Reverse Votage V n max, [V) Power Dsspaton P max. (mw) Maxmum Ratngs Temperature Range Operatng (X) Storage ( C) SO Type No. S226-0 S S2839 S2340 S90 ^S90-0_ S90-Q3 S9Q-04 S S S S S25Q6-0 S Dark Current vs. Reverse Voltage (TyP-at25C) Juncton Capactance vs. Reverse Voltage (T» at f = MHz. 25'C 0 '0' REVERSE VOLTAGE (VJ HEVFRSE VOLTAGE [V Dark Current vs. Temperature Drectvty 2Q ~«0 -btt AMBENT TEMPERATURE C) 60% 40% 20% 20% 40% 60% Hb. ATVE SENSrmVTY

26 PN Slcon Photododes (2) Type No. S72 * S3072 S Features 2.54mrn da. senstve area, <s> Outlnes Wndow Materals Package Phoosensltwe Surface Spectral Response Characterstcs (at 25^C) Sze (mm) Effectve Area (mm 5 ) Range (nm) Peak Wavelength (nm) Radant Senstvty (A/W) Peak Wavelength 633nm He-Ne Laser 330nm GaAs LED Short Crcut Current 00 lux for vsble to R /K TO mn da, senstve area, for vsaeto f! 0/K TO-5 ff> 3, mm dn. sens lve area, for vsble to FR /K TO , Fus^d slca wndow, hgh UV gcnsl v?/ /Q S 0.5 * S mm da. senstve area, (D/K TO-8 4> for vsble to R SS63-0 /K «4mmTO S S S S S255 0 x Qmrn senstve area, tor vsble to H Whte substrate verson of S /R Low dark Ceramc 0x0 00 current verson of S Fused slca wndow, hkjh UV senstvty /Q For CT appcaton, etc. S255-0 Hgh-voltage wthstand type 0.44 /R Ceramc.2X * Other PN photododes wth varous senstve area szes (0x20. 8x8, 28x28 mm etc.) are also avalable. l, sn vln. (jta) Spectral Response 0-7 ( at 25TC) foo 800" (A) See pages 34 to 37 for outlnes. Wndow materals are K: Boroslcate glass Q: Fused slca R: Resn coatng WAVE.FNGTH (nm) * Temperature Characterstc of sh rj< T * mark ndcates newly lsted products. g +o,5 -OS 4 24 GOO 800 WAVELENGTH (nm>

27 _ _ *. '! -20 : Dark Current d Max. (na) 0 {Vr =30 V) 0 (Vr = 24 V) 30 {Vh = 00 V) 30 {Vr -50 V) 50 (Vr = 5Q V) 0 (Vh =30 V) (Vr =30 V} 0 Vg - 30 V) (Vr -0 mv) 30 (Vr =30 V) Characterstcs (at 25 C) Temperature Dependence of d Typ- (Tmes/ C) Juncton Capactance, Cj (PF). 8 (Vr =30 V) (Vr = 24 V) 2 (Vr =00 V) 0 (Vr =00 V) 7 (Vr = 50 V) 70 (Vr =30 V) 00 (Vr =30 V) 250 (Vr -0 V) 35 (Vr =30 V) Cutoff Frequency fc (MHz) 50 (Vr ^3QV) 45 (Vr =24 V) 50 (Vr =00 V) 60 (Vr ^00 V) 60 (Vr -50 V> 30 (Vr = 30 V) 5 (Vh =30 V) (VR = QV,RL = ka) 60 (Vr =30 V) NEP (W/Hz (V).3X0 M (Vr = 3Q V) 00.6X0 (Vr =24 V) X0" 4 (Vr =00 V) 2.7 X0" 4 {Vr =50 V) 3.8X0 M (Vr =30 V) 3.0 XC (Vr =3C 3.6 X0" 4 (Vr =30 V) 3.9XCT 4 JVr = mv) Reverse Voltage V R max X0-" {Vr =30 V) 50 Power Dsspaton P max. (mw) Maxmum Ratngs Temperature Range Operatng Storage ( 9) , + 80 Type S3072 S722-0 S S307 S863-0 S S S S S255 S255-0 Dark Current vs. Reverse Voltage 0"' ( at 25" C) Juncton Capactance vs. Reverse Voltage 000 ( at f = MHz, 25'C) 0"" 5 o ' *"*! t-f-.nf -oe tf T^SJ R',7 St, S3072 _. a, LU 00 '--KTjT^ < o < o 5 0 ;z ~± mm^ S3 y^" "*f.'?n ~s r? s ; & ' 0 s 0" 0 0' REVERSE VOLTAGE (V) 0' 0 0 REVERSE VOLTAGE (V) Dark Current vs. Temperature (; Lnearty 0 ( at 25=0) - '' r /. 2~3 : 0" 0" 2856K FULL LLUMNATON _Rl = kfl 0 kq 00kQ- Jr \Jf" A jt < f * s ~^yf ~j \ m;n,~. ^$H 7-& * s?* -2$&Z^&f'- *&s W- Zjffl jg* $ 0_! 5 oo Q- 0 "'< 3 O 0",: 0"" s# EFER TONE ^VALU ES ) AMBENT TEMPERATURE ( Cj o- * 0 -= 0 -a 0 -b Q - RADANT FLUX(W) 25

28 Spectral 560nm GaAsP Photododes Type No. Outltnes Wndow Materals Package (mm) Photosenstve Surface ] Sze (mm) Effectve Area (mm 3 ) Response Range (nm) Characterstcs (25"C) Typcal Radant Senstvty (AW) Short Crcut Current j Peak 633nm Wave- GaP He-Ne length LED Laser Sh,00ux l Mm. (ua) (xa) Dffuson Type (for Vsble Lght) G5 /K TO-8.3X G6 O/K TO-5 2.7X G7 O/K TO-8 5.6X G8 /R 5x6.3X / G20 O/R 8.9x0. 5.6X TO-8.3X G27 /M Epoxy mold.3x Dffuson Typ e (Externded Red Senstvty Type) G735 /K TO-8.3X G736 O/K TO-5 2.7X G737 /K TO-8 5.6X G738 O/R 5X6.3X G740 /R 8.9X0. 5.6X G3297 /L TO-8.3X Spectral Response BOO WAVELENGTH (nm) See pages 34 to 37 for outlnes. Wndow materals are K: Boroslcate glass L: Lens type boroslcate glass R: Resn coatng M: Epoxy mold mark ndcates newly lsted products. Temperature Characterstc of sh g +.0 o FOR\VSBLE + 0,5 JGHT r, u n EXTENDED ^ED STVTY LU 0_ JJ n WAVELENGTH (nm) 26

29 CO -- ' j : Dark Current, d Max, (PA) lomv V R = "V (pa) Temperaj ture Dependence of d (Tmes/'C) Characterstcs (25 C) Shunt Resstance, R S h V D = 0mV Mn. (GQ) (Gft) Juncton Capactance, Cj V R = 0V (PF) Rse Tme tr V R -OV R L =ks2 N NEP (W/Hz,? ) Reverse Voltage V R max (V) Absolute Maxmum Ratngs Temperature Range Operatng Storage CO fc) Type No X0" X0" 5 G xo" 5 GT7 0 0 SO X0"' x 0~ 5 G X0" G X0" G27 G5 G x 0" X0" G X G737 0" X0" 5 G X0 5 G X 0" G3297 G735 Response Tme vs. Load Resstance Dark Current vs. Reverse Voltage ( atv n = 0V,2S'C) to- 8 ( at 25"C) A w, 3 *"^ Oj m* KssZS85 ~J& W 'J? fyv \a // '$/ w 0 3 0" 0 s LOAD RESSTANCE (f) 0"" Bs jj _,*' 0"" ~<»&-*. *>^ p&g^ *^Z<Z& 0-' m* & 3,'^ ' '\*t WW* * SkM *-& $k* -*^> V 3-3 o- 2 o- 0 0 REVERSE VOLTAGE (V) Shunt Resstance vs. Temperature 0" Ss& -^' >'te r,. : f^jfe; "Sflju-. ;..,;-:. w "" Gw.,; : Z 0 s to S o«(atvf.=0frv) e fc sgf? L^S^s?"!H^--"b"~ &s ^y>s - 5 m' Lnearty 2856K FULL LLUMNATON ( at 25 C] R = 0on 0= 0 s TO' AMBENT TEMPERATURE ("Cj ERTO d ^REF:... NEP VALUES o RADANT FLUX(W) 27

30 Spectral nm GaAsP Photododes Photosenstve Surface, Resc sponse Characterstcs (25 C) Type No. Outlnes Wndow Materals Package (mm) Sze (mm) Effectve Area (mm 2 ) Range rm Typcal Radant Senstvty (A/W) Peak Wavelength Peak 254nm Wave- : Hg-Lne ength. 560nm GaP 633nm He-Ne Laser Short Crcut Current l S h, 00 lux Mn (HA) Schottky Type (for Ultravolet to Vsble Lght) G25-02 O/Q TO-8.X G26-02 O/Q TO-5 2.3X , G27-02 m/q TO-8 4.6X G29 m/q 5X6.5 0.X Schottky Type (Extended Red Senstvty Type ) G745 O/Q TO-8.X G746 O/Q TO-5 2.3X G747 /Q TO-8 4.6X Spectral Response 0.3 :>ED RED SENST VTY TY =E \ S 0.2 % 0.5 FORUL TRAVOL ET A' TOVS 3LE LGH T jf WAVELENGTH See pages 34 to Wndow materal s Q: Fused slca 37 for outlnes. Temperature Characterstc of sh 5" FOF ULTRA\ OLET 'SBLE L GHT *"^\ - E CTENDEC S ENsmvr )RED rytype < WAVELENGTH (nm)

31 , r s^lq ' ' : ( Dark Current, d Max. V R = lomvj (PA) <pa) Tempera- ture Dependence of d (Tmes/'C) Characterstcs (25 C) Shunt Resstance, R sn Mtn. (GQ) = 0mV <G ) Juncton Capactance, Cj V = R OV (PF) Rse Tme lr V R = 0V R L = kq! NEP {W/Hz j Absolute Maxmum Ratngs Reverse Votage V R max Temperature Range Operatng Storage (V) ( C) ( C) Type No X0 5 G XQ" 5 G X0" 5 G X0" 54 G X0"' 5 G X0' G X0" 4 G747 Response Tme vs. Load Resstance {atvh =0V, 25*C) Dark Current vs. Reverse Voltage ( at25"c) f u r,c. /ft QyjKV ztw * P &> / & o -. W\ $ <L-m&> ~<&M M&j ~% 0-' " * p G * r,m > A "* V G 7 Ab o r 5^ H^C *, Ss^T- 0 a 0* 0 5 LOAD RESSTANCE (J)) 0-0 "* 0"' 0 REVERSE VOLTAGE (V) Shunt Resstance vs. Temperature (at Vn = 0mV) = ' c u? e 0' S?,(L.»»^.r~** & UZSj *./"""P^>- ^ 3 *^** ^ G'^7- '46. ^S:5 g o M ^g? P~o. <!0 9 ^79^ to T YA m».. Lnearty 2856K FULL LLUMNATON ( at 25=C) R=0as 0 6 0'> 0" AMBENT TEMPERATURE ( C) -ERTC NEP\j ALUES f-< 0 J o-'! 0 0" a to- 6 0" J 0"»-' 0 RADANT FLUX(W) 29

32 Spectra! GaP Photododes ^ Photosenstve Surface j Response Characterstcs {25 C) Typcaf Radant Senstvty (A/W) Short Crcut Current mm Spectral Response "yp. at 25'C) 0. Outlnes Type Peak No. Package Sze Effectve Range Wavelength Wave- 254nm 400nm Peak lsn,000 lux Wndow Area Materals Mn. (mm) (mm) (mm 8 length Hg-Lne ) (nm) (nm) (HA) (MA) Schottky Type - 7Q TO-8.X TO-5 2.3X ^ /Q TO x ^a n 05 Seepages 34 to Wndow materal s Q: Fused slca 37 for outlnes WAVELENGTH (nm) Temperature Characterstc of sh t +.0 ^= -0.5 m a. 5 LU "" WAVELENGTH (nm)

33 . ; z=. Juncton Rse r L w Dark Current, d Max. V R = 0mV (pa) V R = V (pa) Temperalure Dependence of d (Tmes/'C) Characterstcs (25 C) Shunt Resstance, R sn \ Mn. (GO) V = 0mV {Ol) \ capactance, Cj V R =0V (PF) Tme tr V R = 0V! R L = kq ; NEP (W/Hz 2 ) - 4 Reverse Voltage V R max (V) Absolute Maxmum Ratngs Temperature Range Operatng Storage ( C) ( C) Type No X0"' X0 5 G X0" G96 Response Tme vs. Load Resstance (Typ.a*Vh = 0V, 25*C) Dark Current vs. Reverse Voltage,., ( at25'c)._] k;- 3 CO,0- $s s!- \/^~? ^ 7 ^ * 6^ c>. = ye- *r?^6^,l- D" LOAD RESSTANCE (t> O"' 0"' 0 REVERSE VOLTAGE (V) Shunt Resstance vs. Temperature 0' 3 0' 2 _ 0' LEJ g 0 < LU EC Z J 0 s ==_J ^^ G> S >C " Us ^ ^ rryp.atvn = 0mV) =~ T -T. Lnearty 5j 0- GC a. Z> O to- 3 a => o- 285 FUL 3K L LLU»NATON ( at25 C) R L = 0on 0 :J D AMBENT TEMPERATURE PC),r re =ERTC NEPV ALUEE 0-""' o-' 4 0 -' 2 o- 0 O" 8 o- 6 o-' 0 " f RADANT FLUX(W) 0 3

34 Boltzmann's Absolute Slcon Avalanche Photododes (APD) Type No. S238 Ottnes Wndow Materals 0/K Package (mm) Photosenstve Surface Spectra! Response Characterstcs (at 25 C) Sze {mm da.) Effectve Area (mm 2 ) TO-8 < S2382 TO-8 ^ S2383 TO-8 < S2384 0/K TO-5 $ S2385 /K TO-8 < Range (nm) Peak Wavelength (nm) Quantum Effcency at 540nm M = (%> Typ- at 800nm M= (%) Breakdown Voltage, V s ld =00uA (V) Max. (V) Breakdown Voltage Temperature Coeffcent 400^ (V/ S C) Seepages 34 to Wndow materal s K: Boroslcate glass 37 for outlnes. (D Measured at the gan ndcated n the characterstcs table. S/N RATO CONSDERATON The slcon avalanche photodode has an nternal gan mechansm. t can amplfy a small sgnal to over the thermal nose level, thus producng a hgh S/N rato. However, when the sgnal s amplfed, the nherent excess nose caused by current fluctuaton n the multplcaton process s also generated. Ths nose current of an avalanche photodode can be represented by the followng equaton; Output vs. Gan / SH0T = /2q L M?+ 'B-Rn NOSE Nose current = /2qloM 2 FB (F = M x n the range of M = 0 to 00) Where F s excess nose factor, M s gan, lo s photocurrent at M =, q s electronc charge, B s bandwdth and x s excess nose ndex. The fgure at the rght shows the relatonshp between output and gan. t s clear that the optmum gan exsts n the regon where the shot nose s equal to the thermal nose. THERMAL. GAN- Famp : Nose ndex of next-stage amplfer Rj n : nput resstance for next-stage amplfer K : T : constant temperature v^fampktb-rn 32

35 ) ; '; Dark Current, d 4 {na} Max. (na) Characterstcs (25 C). :'B> Cutoff S: Juncton ^ Fronl(,nm,- Excess Nose ndex % Gan Capacttance Cj (pf) fc R L =50Q (MH2) Max. M A =800 Maxmum Ratngs Ambent Operatng Temperature fc) Storage Temperature Range ( c> S S S S23 Spectral Response (S238, M=) ( at 25 c) Photocurrent vs. Reverse Voltage (S238 (Enlarged Graph) 0.6 < 0.5 > t 0.4 co z < < 0.2 < tz 0' DC DC 3 0 * O O- o Q, S" c 55 c Wf~ cr m -<.o. &r S>y W'\a r 4j &J &T <j/ r <& WAVELENGTH (nm) REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) Gan/Dark Current vs. Reverse Voltage (5238) Nose vs. Garn(S238) /at 25 C, = 0 khz, HL = 00kQ, 8 = 363 H \ k -aoonn, 0= (ja, Vb = 90 V / j*'^ Fft ::z ^: REVERSE VOLTAGE (V) GAN 33

36 [ O.8 o * Dmensonal Outlnes S90-0 Unt: mm SENSTVE SURFACE >t WNDOW dl d #3.0±0. *l +l. J " m o + w, " ' _ # P3 #4.7 ±0. a <= r\ J T #0.45 LEAD W.45 / LEAD / ;" #0.45 / LEAD / 2 s fr o Mho (-JLEAD COMMON TO CASE O S226-0 etc. S90-3 S238,S2382,S2383 COMMON CASE COMMON TO CASE b W 5ENSTVE_ SURFACE " #5.4±Q.2 WNDOW j#3.0±0. #5.4±0.2 3T - 4^ SENSTVE SURFACE " # , " # WNDOW o ^0.45 LEAD #0.45 / LEAD #0.45 / LEAD / 2.5±0.2 H T" o { W o ) COMMON TO CASE o :n y o o x H 'Q O S226-5BQ etc. S72,S3072 S2384 SENSTVE SURFACE WNDOW NS SURFACE ( SENSTVE SURFACE #9.2 ±0.2 $58. ±0.2 WNDOW ^5.9±0. fa /T _J #0.45 LEAD / ^^-v..,' W-45 / LEAD / " l COMMON TO CASE 'o K o S ~>2 S307? A l.lro.z

37 2 H ' S226-8BQ etc. S722,S307etc. S863-0 Unt: mm SENSTVE SURFACE 4.0 = ±0.2 /NQOW 0.8 ±0. d + d -H SENSTVE SURFACE ( # WNDOW \ f&0.8±0. SENSTVE ±0.2 - WNDOW (J0.0±0.2 L -h, d ḏ H r- #0,46, 4 LEAD/ r 3 8 A\ A 0.45 t, An j f Z 2 7.5±0. / -"» bu MARK COMMON TO CASE S A 2.5 a. 7?? S ! 0.2 o ' H ' o o COMMON.OCAoL o S2385 S227-6BQ etc. S227-6BR etc SLNSTVF sun FACE t s±o.a t3.5±0.3_ 5~~g senstve surface :? ±^== 3" SENSTVE KOHACF ^m ^ LEAP /, B.5+Q.3 r o-h-o H4^ S227-33BQ etc. S227-33BRetc. S227-66BQetc. o.±o.3 senstve * en CSFArF TT H TT : 0.! SENSTVE SURFACE 3 U.,-5 j + )ND:CAlO-; <^-M-o (([NDCATOR O H O E3 ( + ) NDCATOR O M-K5 v5 35

38 o, S227-66BRetc. D) S227-00BQ etc. S227-00BRetc. SENSTVE SURFACE - *" U + fa Pff SCNSVE SURFACE m rr.4±d.'5l 9 + V -- q-tg / S723-O6,-08 S227-0QBR A 4.5=0.3 5 ±0.3 B t6.5±0.3 C 2. ± =0.3 d SENSTVE SURFACE re zrr - t\" G20 G740 ( + JNDCATOR \ o \4 o + l NDCATOR \ <M*-^> D 2. ±0.3 (2.5 ±0.3 E 3. ± ±0.3 F 4.6= ±0.3 (+ NDCATOR o-h-o S087-0,G8,G738 S087,S S33-0,S33- etc. o LEAD MARK t a SENSTVE SURFACE 4 LEAD MARK to.c ;Q+ =e= / o N o c^-w-o o M o 533, etc. S787 Seres S264, S264-0 (-) TERMNAL o M 36

39 : NCLUDNG. 5 D S2506 Seres S40 Unt: mm 0.2MAX,Z7± ^ r -^NCDENT Vj LGHT as tt; *- CENTER OF CHP \ '4 PN CONNECTON NC CATHODE ANODE CATHODE S2833,G , S2833 G27 BURR 4, L 4.9 ±0.4 ' ^ 4* LE f' FLTER (S2B33 ' SENSTVE SUAFACE /feo- DEPTH 0. Ma t PN CONNECTON NC CATHODE ANODE CATHODE a N-^> *Thespacngsofthe leads n the fgures are ndcated as center-to-center dmensons. The photograph shows a typcal type. 37

40 8-pn Specally Desgned Photododes and Related Devces n addton to the many devces descrbed n ths catalog, Hamamatsu s able to produce a varety of specal devces such as photododes wth operatonal amplfers, thermoelectrcally-cooled photododes, and lnear or area arrays wth specfcatons and confguratons to match your specfc requrements. Please contact us about such requrements. The followng devces show examples of our capablty. «Mult-Element Photododes S44S S284 Type No. Senstve Area (mm) No. of Elements 2.54 da. 2 Spectral Response (nm) 90 ~ G964 (GaAsP) 90 ~ 680 Package 3-pn TO-8 Man Use Double beam spectral photometer S x.45 2x2 320 ~ pn TO-5 Poston detecton S557 da. (quadrant) ~ pn TO-8 S da. (quadrant) Ceramc case (5-pn) S x x2 320 ~ pn TO-8 S x x2 320 ~ 060 Ceramc case (5-pn) CD and optcal dsk, poston detecton S67.7 x2.8 2x2 320 ~ pn TO-8 Poston detecton ; S segmented ~ 060 Epoxy mold DP type ForCDandoptcal S segmented ~ 060 Epoxy mold, 8-pn DP type dsk Photodode/Op-amp Devces Type No. Senstve Area (mm) Spectra! Response (nm) Peak Wavelength S x S x S x ~ Package 0-pn TO-5 (nput wndow : 3mm da.) S x G x 'PN Photodode/Pre-amp Devces Type No. Senstve Area (mm) Response Wavelength Range (nm) Response at 820 nm (mv/ fv) Cut-off Frequency (MH2) S? ch 5 S da. 320 ~ Package 3-pn TO-8 * S2856, S2802 (for optcal dsks) a S446, S284 (for spectroscopy) Thermoelectrcally-Cooled Photododes Type No. S S2592-0: Senstve Area (mm) Spectral Response (nm) Peak Wavelength (nm) CooNng Temperature AT m 2.4 x ~ Package TO-66 TO TO-66 S x TO-8 Photododes wth BNC Connectors Type No. Senstve Area (mm) Response Waveength Range (nm) Peak Wavelength (nm) Package S228.3 da Metal case wth BNC S da. 90 «, connector f. A Photododes wth op-amps k. S228 (wth BNC connector) Monochromatc Photododes Type No. S2684 Seres Peak Response Wavelength (nm) 340, 405, 500, 520, 560, 650, 700 Spectral Response wdth FWHM (nm) 0+2 Photododes wth coolers A S2684 (for monochromatc lght) 38

41 35, 38 and 46 ELEMENT PHOTODODE ARRAYS Hamamatsu offers lnear photodode arrays desgned for multchannel spectrophotometers. These photodode arrays feature wde spectral response from ultravolet to near nfrared and low cross-talk between elements. The followng 6 seres are avalable, dependng on the senstvty and operaton mode. Each seres s provded wth 35, 38 and 46 element arrays wth.0 mm ptch. Drver/amplfer crcuts are also avalable. Operaton Mode Type No. Features Wth reverse bas S23 Seres Hgh R senstvty, low dark current appled (Charge ntegraton readout) S23 2 Seres Low R senstvty, low dark current S23 3 Seres Low Cj, suppressed R senstvty S237 Seres Hgh R senstvty, low dark current (Real tme S238 Seres Low R senstvty, low dark current readout) S239 Seres Low Cj, suppressed R senstvty PHOTO Cs (ntellgent Lght Sensors) Photo Cs are ntellgent lght sensors consstng of a photodode, a sgnal processng crcut and a sgnal output crcut, all ntegrated n a sngle chp. Photo Cs allow the user to desgn and manufacture compact devces wth fewer producton processes at a low cost. Proxmty sensors, color sensors, and poston sensors are just some for example of the Photo Cs avalable from Hamamatsu. Type No. Product Name Features S2827 S2828 Photo C sensors Amplfer and Schmtt trgger crcut are ncluded. Dgtal output, TTL compatble S3599 H39 Lght modulaton phto C Lnear encoder module Optcal synchronous detecton s easly performed as oscllator and LED drver are ncluded. Dgtal output, TTL compatble ncremental 2-phase dgtal output usng more strpes of slts H3833 Photo C color sensor No output gan adjustment requred, good color temperature dscrmnaton for fluorescent lamps PHOTOSENSOR AMPLFER C279 The C279 Photosensor Amplfer s a current-to-voltage converson amplfer used to amplfy very-low photoelectrc currents from a photodode wth very lttle nose. There are three senstvty ranges (H/M/L) to match the photodode sgnal. A 0-turn potentometer s used to zero the amplfer, so fne adjustment s possble wth good resoluton. As the C279 s operated by dry batteres, t can easly be used anywhere. An external power nput connector s also provded at the rear panel for a long, contnuous operaton. 39

42 ) Applcaton Examples Mm Low nose lght-senstve pre-amplfer Hgh speed lght sensor & DVO Low PD: PN photododes, e.g. S72, S2506, S226 R_: Determned fay senstvty and tme constant of Cj of photodode R a : Determned by operatng pont of FET FET: 2SK9. 2SKK. 2SK36. etc. level lght sensor head PD: PN photododes. e.g. S72. S2506, S226 Rl; Determned by senstvty and lme constan of Cj of photodode A: HA2625, HA562. LF3S7. etc. Vo;! 3r,xRL x(v) Lght balance detecton crcut / PD -O+5V A 7 Vo = R h x(sh -lah l Bold lnes requre guarded or lellon wrng A: AD55. OPA. OPA28. etc A 2 : OP-07 Q: to to 0 pf polystyrene capactor Rj; Metal glaze resstor (up to 0 GO} S: Low leakage reed relay PD: S226, S336. S2386. etc. llumnance ow METALC SHELDED BOX o r00(mv/;j(j Wnen equal lght enlers photododes, Vq s 0. n unbalanced state. Vn - ± V. Flter can be used tor deled on of specfc wavelengths. Hgh speed lght sensor usng vdeo amplfer VOLtMETEP OP-Amp: CA33G PD:Sl33(0.5uAnOO!uK) *: Meter calbraton V.R. PD R At A, -5V PN photododes, e.g. S72. S2506, S226 Determned by senstvty and lme constant of Cj of photo-dode LM733 (Under the condtons shown n the fgure. G = 20. S =90 MHz) LH0033 Lght sensor usng hgh speed operatonal amplfer Lght-to-logarthmc voltage converson crcut 0K + 5V-* *** w PD: PN photododes. e.g. S 72. S2506, S22lf Rf: Several resstors connected n aeres to elmnate parallel capactance A: LH0032 -D- Vo^-0.O6#og(^±s+) (V D: Logdodes, S853, ZU490 (Ferrant). etc. s: Current source for settng operatng pont, B «l 5n R: 0* ~ 0 nto q: D- saturaton vollage. 0 nm -"\0? (A) A: FET-npjt cpamp 40

43 Ultra-hgh speed lght detecton usng PN photodode & flu CT scanner, X-ray montor SUA CONNECTOR sjgnal voltage -SV PD: PN pfotododes, e.g. 872, S2506, S226 R: 0kO, Voltage drop by average photocurrent should be suffcently smaller than Vr C: loooopf ceramc capactors (3 pes) PD, C: Coaxal cable should be as short as possble Gamma-ray, X-ray detector PD: R: / ALUMNUM FOL CAP SCNTLLATOR S 337 seres 0-0QUQ A: OPA etc, Scntllator, CdWO, 6QO, etc. adhered to Lght absorpton meter SAMPLE ten < > 7, _*_.;- ALUMNUM FOL GAP "> PD: S722 A. A 2 :LF442 er>- Several mv or tens of mv for cobalt 60 PD: S284.S446 A: LOGlOO (Burr Brown) Fller: Bandpass flter etc., when needed V uu - log (Wsh2) M Notes: When S h s equal to l S h2 wthout the sample, absorbance A ol the sample s a drect measure of v ut..e.. A V Du t LED total lght emsson measurement <[ ulght ntegraton crcut J. W~& r*~ P.ESET NPUT A: Ammeter, ~ 0mA PD: S23B7-00BR B: Alumnum block, nner metal platng Po: Total lght emsson (WJ Refer to spectral response features chart for PD radant sensvty Example: 0.6 A/W at 930 nm PcHsh/3 J- U- vo«= j'tshxt_dl (v) Reset nput, vse TTL L to reset A: LF356 etc. S: COM3 066 PD: 5225, 5336,52386 elc. C: Polycarbonate capactor converson crcut (E^Lght-to-frequency " ;L_d p PD5555 0* 0-0 f 3. f C OUTPUT u^ f= = JL x J t Vcc C jpd5555. CmOS tmer C The operatonal amplfers used n these crcut examples wll dffer n such factors as operatng ambent temperature range, bas current, phase compensaton, offset adjustment method, dependng on the type used, Typca Operatonal Amplfers, Vdeo and Buffer Amplfers Analog Devces AD55 Burr-Brown OPA, OPA28 Natonal Semconductor Harrs HA2625. HA562 RCA CA330, PM OP-Q7 etc. LF357, LF356, LH0O32, LH0033 LF442, LM733 4

44 HAMAMATSU HAMAMATSU PHOTONCS K.K., Sold State Dvson 26-, chno-cho. Hamamatsu Cty, 435 Japan Telephone: 0534/34-33, Fax: 0534/35-037, Telex: Man Products Slcon Photododes PN Slcon Photododes Slcon Avalanche Photododes GaAsP Photododes Photo C PCD Lnear mage Sensors Poston-Senstve Detectors Phototransstors nfrared Detectors CdS Photoconductve Cells Optosolators Opto-Hybrd C nfrared Emtters Hamamatsu also supples: Photoelectrc Tubes magng Tubes Specalty Lamps magng and Processng Systems nformaton n ths catalog s beleved to be relable. However, no responsblty s assumed for possble naccuraces or omsson. Specfcatons are subject to change wthout notce. No patent rghts are granted to any of the crcuts descrbed heren. Sales Offces ASA: HAMAMATSU PHOTONCS K.K , Sunayama-cho, Hamamatsu Cty. 430 Japan Telephone: 0534/ Fax' 0534/ Telex- 4225*36 U.S.A.: HAMAMATSU CORPORATON Man Offce 360 Foothll Road. P.O. BOX 690 Bndgewater, N.J U.S.A. Telephone: 20/ , Fax: 20/ Western USA Offce 2444 Moorpark Avenue. Sute 32 San Jose, Calf. 9528, US. A Telephone: 408/ , Fax: 408/ Unted Kngdom HAMAMATSU PHOTONCS UK LMTED Lough Pont. 2Gladbeck Way Wndmll Hll, Enfeld, Mddlesex EN2 7JA. England Telephone: Fax: Telex: France. Span, Portugal. Belgum. Swtzerland: HAMAMATSU PHOTONCS FRANCE Zone ORLYTECH - Bat A3 Aee du Cdt Mouchotte, 9550 PARAY VELLE POSTE, France- Telephone: 33-() , Fax: 33-( Telex: HPF63895F W. Germany. Denmark, Holland: HAMAMATSU PHOTONCS DEUTSCHLAND GmbH Arzbergerstr. 0. D-B036 Herrschng am Ammersee, West Germany Telephone: , Fax: B Telex: Sweden, Fnland, Norway: HAMAMATSU PHOTONCS NORDEN AB Kanalvagen 20. S-94 6 Uppands Vasby, Sweden Telephone: /3290, Fax: /94567 taly: HESA S.P.A. Vale Teodorco 9/, 2049 Mlano, taly Telephone: 39-(2)3l 75 5, Fax: 39-(2) Tefex: Hong Kong: S&T ENTERPRSES LTD. Room 404, Block B. Watson's Estate. Watson Road. North Pont, Hong Kong Telephone: 5-7B492. Fax: 5-B07326 Telex: Tawan S4T ENTERPRSES LTD. Tawan Branch No, 56. Nankng East Road, Secton 4, Tape. Tawan Telephone: , Fax: Telex: KORYO ELECTRONCS CO., LTD. MrvSeng Trade Bldg,, Mo. 342, Mn-Seng East Road, Tape, Tawan Telephone: , Fax: Telex: Korea: SANGSOO SANGSA CO. Sute 42, Sunmyungho Bldg., 24-2, Yodo-Dong, Youngcfeungpo-ku, Seoul, Korea Telephone: , Fax: Telex: Sngapore: S&T ENTERPRSES LTD. Sngapore Branch 80, Gentng Lane. Unt 03-02, Gentng Btock, Ruby ndustral Complex Sngapore 334 Telephone: , Fax: Qualty, technology, and servce are part of every product. NOV/83 Supersedes JAN/BQ CR-7000 Prnted n Japaf