N- and P-Channel 2.5-V (G-S) MOSFET

Transcription

1 S456DY N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at 7. N-Channel.35 at V GS =.5 V 6. FEATURES Halogen-free Accordng to IEC Defnton TrenchFET Power MOSFET:.5 Rated Complant to RoHS drectve /95/EC P-Channel -.33 at V GS = V at V GS = -.5 V - 5. SO-8 S 8 D D S G 7 D S 3 6 D G 4 5 D G G Top Vew Orderng Informaton: S456DY-T-E3 (Lead (Pb)-free) S456DY-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwse noted Parameter Symbol N-Channel P-Channel Unt Dran-Source Voltage V DS - V Gate-Source Voltage V GS ± Contnuous Dran Current (T J = 5 C) a T A = 5 C T A = 7 C A Pulsed Dran Current M 4-4 Contnuous Source Current (Dode Conducton) a I S Maxmum Power Dsspaton a T A = 5 C. P D W T A = 7 C.3 Operatng Juncton and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unt Maxmum Juncton-to-Ambent a R thja 6.5 C/W a. Surface Mounted on FR4 board, t s. Document Number: 777 S9-867-Rev. C, 8-May-9

2 S456DY SPECIFICATIONS T J = 5 C, unless otherwse noted Parameter Symbol Test Condtons Mn. Typ. Max. Unt Statc V DS = V GS, = 5 µa N-Ch.6.6 Gate Threshold Voltage V GS(th) V DS = V GS, = - 5 µa P-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± V Zero Gate Voltage Dran Current On-State Dran Current b SS (on) N-Ch ± P-Ch ± V DS = V, V GS = V N-Ch V DS = - V, V GS = V P-Ch - V DS = V, V GS = V, T J = 55 C N-Ch 5 V DS = - V, V GS = V, T J = 55 C P-Ch - 5 V DS 5 V, N-Ch V DS - 5 V, V GS = V P-Ch -, = 7. A N-Ch.9.5 V GS = V, = - 6. A Dran-Source On-State Resstance b P-Ch.7.33 R DS(on) V GS =.5 V, = 6. A N-Ch.5.35 V GS = -.5 V, = - 5. A P-Ch.4.5 V DS = V, = 7. A Forward Transconductance b N-Ch 7 g fs V DS = - V, = - 6. A P-Ch I S =.7 A, V GS = V Dode Forward Voltage b N-Ch. V SD I S = -.7 A, V GS = V P-Ch -. Dynamc b N-Ch 5 5 Total Gate Charge Q g N-Channel P-Ch 35 V DS = V,, = 7. A N-Ch 6.5 Gate-Source Charge Q gs P-Channel P-Ch 7 V DS = - V, V GS = V, = - 6. A N-Ch 4 Gate-Dran Charge Q gd P-Ch 3.5 N-Ch 4 6 Turn-On Delay Tme t d(on) N-Channel P-Ch 7 5 V DD = V, R L = Ω N-Ch 4 6 Rse Tme t r A, V GEN = 4.5 V, R g = 6 Ω P-Ch 3 5 P-Channel N-Ch 9 5 Turn-Off Delay Tme t d(off) V DD = - V, R L = Ω P-Ch A, V GEN = V, R g = 6 Ω N-Ch 4 6 Fall Tme t f P-Ch 45 7 I F =.7 A, di/dt = A/µs N-Ch 4 8 Sorce-Dran Reverse Recovery Tme t rr I F = -.7 A, di/dt = A/µs P-Ch 4 8 a. For desgn ad only; not subject to producton testng. b. Pulse test; pulse wdth 3 µs, duty cycle %. Stresses beyond those lsted under Absolute Maxmum Ratngs may cause permanent damage to the devce. These are stress ratngs only, and functonal operaton of the devce at these or any other condtons beyond those ndcated n the operatonal sectons of the specfcatons s not mpled. Exposure to absolute maxmum ratng condtons for extended perods may affect devce relablty. V na µa A Ω S V nc ns Document Number: 777 S9-867-Rev. C, 8-May-9

3 t t S456DY N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 4 V GS = 5 V thru 3 V.5 V - Dran Current (A ) ID 3 V - D r a n C u r r e n t ( A ) 3 T C = 5 C 5 C V,.5 V - 55 C V DS - Dran-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characterstcs Transfer Characterstcs. 4 - On-Resstance (Ω) R DS(on) V GS =.5 V C- C a p a c a n c e ( p F ) C ss C oss C rss Dran Current (A) V DS - Dran-to-Source Voltage (V) On-Resstance vs. Dran Current Capactance 5.6 V DS = V = 7. A = 7. A - Gate-to-Source Voltage (V ) 4 3 R D S(on ) - O n - R e s s a n c e (Normalzed).4.. V GS Q g - Total Gate Charge (nc) Gate Charge T J - Juncton Temperature ( C) On-Resstance vs. Juncton Temperature Document Number: 777 S9-867-Rev. C, 8-May-9 3

4 S456DY N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 I S - S o u r c e C u r r e n t ( A ) T J = 5 C T J = 5 C V SD - Source-to-Dran Voltage (V) Source-Dran Dode Forward Voltage.4. n c e ( V ) r a t. = 7. A.8 - O n - R e s s a n c e (Ω) R DS(on) VGS - Gate-to-Source Voltage (V) On-Resstance vs. Gate-to-Source Voltage 3 4. = 5 µa W ) 8 V GS(th) Va ( t l f f Power T J - Temperature ( C) Threshold Voltage.... Tme (s) Sngle Pulse Power Duty Cycle =.5 N o r m a z e d E e v e T r a n s e n t T h e r m a l I m p e d a n c e c t t t. Duty Cycle, D = t. Per Unt Base = R thja = 6.5 C/W 3. T JM T A = P DM Z (t) thja Sngle Pulse 4. Surface Mounted P DM 3 Square Wave Pulse Duraton (s) Normalzed Thermal Transent Impedance, Juncton-to-Ambent 4 Document Number: 777 S9-867-Rev. C, 8-May-9

5 S456DY P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 4 V GS = 5 V, 4.5 V, 4 V, 3.5 V T C = - 55 C 3 3 V 3 5 C - Dran Current (A ) V - Dran Current (A ) C V V V DS - Dran-to-Source Voltage (V) Output Characterstcs 3 4 V GS - Gate-to-Source Voltage (V) Transfer Characterstcs On-Resstance (Ω) RDS(on) V GS =.5 V C- Capactance (pf ) C oss C ss C rss Dran Current (A) On-Resstance vs. Dran Current V DS - Dran-to-Source Voltage (V) Capactance Gate-to-Source Voltage (V ) 4 3 V DS = V = 6. A R D S(on ) - On-Resstanc e (Normalzed).4.. = 6. A V GS Q g - Total Gate Charge (nc) Gate Charge T J - Juncton Temperature ( C) On-Resstance vs. Juncton Temperature Document Number: 777 S9-867-Rev. C, 8-May-9 5

6 S456DY P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwse noted 4 I S - S o u r c e C u r r e n t ( A ) T J = 5 C T J = 5 C V SD - Source-to-Dran Voltage (V) Source-Dran Dode Forward Voltage.6 n c e ( V ) r a. - On-Resstance (Ω) DS(on) = 6. A R VGS - Gate-to-Source Voltage (V) On-Resstance vs. Gate-to-Source Voltage = 5 µa W ) 8 V GS(th) V a. ( l Power f f t T J - Temperature ( C) Threshold Voltage.... Tme (s) Sngle Pulse Power vs. Juncton-to-Ambent Duty Cycle =.5 N o r m a z e d E e c v e T r a n s e n t T h e r m a l I m p e d a n c e Sngle Pulse 4. Surface Mounted Square Wave Pulse Duraton (s) Normalzed Thermal Transent Impedance, Juncton-to-Ambent t t t. Duty Cycle, D = t. Per Unt Base = R thja = 6.5 C/W 3. T JM T A = P DM Z (t) thja mantans worldwde manufacturng capablty. Products may be manufactured at one of several qualfed locatons. Relablty data for Slcon Technology and Package Relablty represent a composte of all qualfed locatons. For related documents such as package/tape drawngs, part markng, and relablty data, see P DM 6 Document Number: 777 S9-867-Rev. C, 8-May-9

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