MRY1518E Series. AnaSem. 12.5msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch. Analog Semiconductor IC.
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1 安纳森 Analog Semiconductor IC 1.5msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch (IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-1 Website: Tel: Future of the analog world
2 Rev. E13-1 Products Data Sheet Analog Semiconductor IC GENERAL DESCRIPTIONS MRY1518E series are monolithic ICs with built-in MR magnet resistive element and CMOS switch. It becomes the non-contact switch with low current consumption, high sensitivity and reliability which is combined with magnet. A horizontal magnetic field parallel to the electrode of the package can be detected by an arbitrary polarity. (N pole S pole) HALOGEN RoHS COMPLIANCE FEATURES CMOS + MR monolithic structure Low current consumption 3.1µA (VIN=1.8V, Ta=5 C) High-sensitivity Typ. 1.5mT Operating temperature range -4 ~ +85 C Operating voltage range 1.6V ~ 6.V Detection pulse driving cycle Typ. 1.5msec with 1.5µsec width Magnetic direction Both direction / CMOS inverter one output Detection magnetic field Horizontal direction of marked side of package (Electrode parallel both direction) SOT-3 ( mm) Small package APPLICATIONS Detection of opening and closing : Mobile phone, Notebook PC, Microwave oven, Washing machine, Rice cooker, Refrigerator, Electronic dictionary, Digital camera, etc. Detection of position : Air cylinder, Antitheft window, Digital door lock, etc. Detection of water level : Water purifier, Humidifier, Bidet, etc. Detection of rotation : Water meter, Gas meter, Wattmeter, Speed meter, etc. Power supply switch : Cordless phone, Electric toothbrush, etc Future of the analog world
3 PRODUCTS NUMBERING GUIDE MRY1518E Design version A : CMOS output Package form T : SOT-3 ( mm) Detection pulse cycle E : Typ. 1.5msec with 1.5µsec width Operating voltage 18 : 1.6V ~ 6.V Detection sensitivity 15 : Typ. 1.5mT PIN CONFIGURATION / MARKING SPECIFICATION Vss 3 A B C D D D D D 1 Vin Vout (Top view) Pin Configuration No. Symbol Descriptions 1 VIN Voltage input VOUT Output 3 VSS Power ground Marking Specification Code Mark Contents A M Series name BC EA Products specification & version D Internal rule Lot number
4 BLOCK DIAGRAM Direction of magnetic field NC VSS 3 4 R1 R3 R R4 T1 Switch Sampling circuit Latch circuit CMOS drive circuit 1 VOUT VIN ABSOLUTE MAXIMUM RATINGS Items Symbol Min. Typ. Max. Conditions Unit Operating temperature TOPR C Storage temperature TSTG C Supply voltage VMAX VIN-.3 - VIN+6. V Assembly temp. condition TASY t=max:5sec/tmax C
5 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VDD=1.8V, Ta=5 C) Items Symbol Min. Typ. Max. Conditions Unit Operating voltage VIN V Current consumption IAVG µa Detection pulse driving cycle ts Pulse width : 1/1 msec H -level output voltage VOH.9VIN - - IOUT=+.5mA V L -level output voltage VOL - -.1VIN IOUT=-.5mA V MAGNETIC CHARACTERISTICS (Unless otherwise specified, VDD=1.8V, Ta=5 C) Items Symbol Min. Typ. Max. Unit Magnetic flux density at operating point (H L) Magnetic flux density at release point (L H) MOPS 1. * 1.5. MOPN * mt MRPS * mt MRPN -1.9 * Width of hysteresis MHYS.1 *.3.8 * mt Note : The values with [*] marks are guaranteed by design, not tested in production. MAGNETIC-ELECTRIC CONVERSION CHARACTERISTIC VOUT VOH N-pole S-pole VOL MHYS MHYS MRPN MOPN MRPS MOPS Magnetic flux density
6 MAGNETIC FLUX DENSITY AND OUTPUT VOLTAGE LEVEL Conditions Magnet & Power Magnet flux density Output level Magnet = OFF / Power = ON M = mt High-level Magnet = ON / Power = ON M.mT Low-level Magnet = OFF / Power = ON M.8mT High-level DETECTION PULSE DRIVING CYCLE (SAMPLING CYCLE) IDD Period (Typ. 1.5mS) Awake (1.5µS) (VDD=1.8V) IDD ON (Typ. 1.8mA) Sleep (Output latched) IDD AVG (Typ. 3.1µA) IDD OFF (Typ. 1.3µA) time OUTPUT SWITCHING TIMING CHART On Sampling pulse Off Magnetic flux MOP MRP MHYS (Typ. 1.5mT) (Typ. 1.mT) VOUT H-level L-level Latch Latch Latch
7 TEST CIRCUIT S or N NC VOUT Direction of magnetic field VSS N or S VIN A 15pF (including probe capacitance) STANDARD MAGNET SPECIFICATIONS P-point : Magnetic flux density measuring position.5mm 4.mm 3.mm Magnet maker : TDK Corp. / Japan Neodymium magnet Magnetic specification : NE47BW Size : mm Magnetization direction for reaction of sensor DETECTION DISTANCE SIMULATION (with standard magnet) Vertical direction (VD) Magnetic flux density (mt) Vertical distance (mm) ( HD = mm ) Standard magnet Detection point of sensor 1.5mT Horizontal direction (HD) Magn Horizontal distance (mm) ( VD = 3mm ) Standard magnet Detection point of sensor 1.5mT
8 TYPICAL ELECTRIC CHARACTERISTICS Magnetic flux density vs. Input voltage 3 (Ta=5 C) Magnetic flux density vs. Ambient temp. 3 (VIN=1.8V) Magnetic flux density (mt) MOPS MRPS MRPN MOPN Magnetic flux density (mt) MOPS MRPS MRPN MOPN Input voltage (V) Temperature ( C) Current consumption vs. Input voltage Current consumption vs. Ambient temp. 7 (Ta=5 C) 7 (VIN=1.8V) Current consumption (µa) Current consumption (µa) Input voltage (V) Temperature ( C) Sampling period vs. Input voltage Sampling period vs. Ambient temp. 35 (Ta=5 C) 35 (VIN=1.8V) Sampling period (msec) Sampling period (msec) Input voltage (V) Temperature ( C)
9 APPLICATION INFORMATIONS Detection of magnetic field To operate output switch, the magnetic field should be applied to the sensor with sufficient magnetic flux density and correct direction. MR series are designed to be ON-state (L-level output) when the horizontal direction magnetic field is applied in parallel to the marked side of sensor, with sufficient magnetic flux (MOPS or MOPN value) regardless of polarity of magnet. Because MR series detect the horizontal direction magnetic field, it has not influence of the reverse-magnetic field. And also, MR series detect the vertical direction magnetic field according to the level of magnetic flux, so that it is possible to apply to not only slide type but also fold type. Front view N or S S or N w TopVIN VSS Detection direction N or S (Marked side) S or N VIN VOUT VIN VOUT Application example 1 -- [Fold type] MNC MR sensor VD VD VD Position A Output level = Low Position B Output level = Low High Position C Output level = High In case MR series is used for fold type cellular phone, IC sense the conditions of opening and shutting of the cover by detection of the magnetic flux according to the distance between IC and magnet. In position A, output is L-level (ON-state) because the detected magnetic flux is sufficient. The magnetic flux decrease according to the magnet is moved from IC (Position A B). Then the IC is turned H-level (OFF-state) because the magnetic flux become MRP or less (Position B C). Magnetic field direction direction direction S or N N or S S or N Magnetic field direction direction N or S direction Detection direction Detection direction
10 Rev. E13-1 Application example -- [Slide type & Rotary type] Magnet MR sensor VD 4 Position B HD Pos3 HD sition A Output level = Low High ion C Magnet MR sensor MR sensor MR sensor MR sensor Position A Position B Position C Position D Output level = High Low Output level = Low Output level = Low High Output level = High In the detection of the slide type, there are two ways of arrangement of magnetic field detecting direction against moving direction. One is parallel and another is cross with moving direction. In case of parallel positioning of magnetic field with moving direction [arrangement 1], the output of IC might be L-level (ON-state) H-level (OFF-state) L-level (ON-state) H-level (OFF-state) due to reverse-magnetic field. To prevent from this malfunction, it is recommended to arrange the detection direction of sensor and magnetic field to be crossed with moving direction of cover [arrangement ]. S or N direction di1 direction direction N or S Magnetic field direction S or N N or S Magnetic field direction Detection direction Detection direction [Arrangement 1] Parallel the direction of detection magnetic field with the moving direction [Arrangement ] Cross the direction of detection magnetic field with the moving direction
11 PACKAGE DIMENSIONS (SOT-3) (Unit : mm) ± ~1.3.8±. (Marked Side) 1.6±.15 ~.35 ~.1 3~ ± ±. Recommended land pattern 1.1~ ~
12 TAPING AND LOADING SPECIFICATIONS (SOT-3) (Unit : mm) 4.±.1.±.5 Mark ø Mark.±.5 3.3±.1 3.5± ±.1 8.±. ø1.5±.5 4.± ±.1 REEL DIMENSIONS (SOT-3) (Unit : mm) 9.±.5 1 ø13±.5 ø6±1 ø178± 1.65 max. Taping direction (3, pcs / reel) 9.±.5
13 may change the products described in this data sheet, or may discontinue production or services without any notice in order to supply the best products through improve the design and performance. Customers are recommended to obtain the latest data or information before placing orders in order to make sure the data or information required is the newest. It is necessary for customers to fully understand the products described in this data sheet and to use it in accordance with its specifications. The products described in this data sheet are not intended to use for the apparatus which have influence on human lives due to the failure or malfunction of the products. Corp. is not responsible for any support to customer s application, product design, software performance, patent infringement or service. Corp. does not disclose or imply a guarantee or description about being licensed based on patents, copy-rights, circuit location license, or other intellectual properties associated with the devices or combinations in which the products or service of Corp. are used or can be used, or which cover the methods. Customers should not export, directly or indirectly, any products without obtaining required licenses and approvals in advance from appropriate government agencies.
14 GENUINE PRODUCT LEGITIMATE LABEL DEFINITION Green colored Circle RoHS Label Other specific customized Labels Ordinary Product Information Bar Our internal Outgoing Check Code 3 Code Our Internal QR Check Code Logo and Brand Name (Black color Logo) Our Internal Product Check Code 1 Genuine labels MUST include our correct contact information as shown
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A7523. AiT Semiconductor Inc. APPLICATION ORDERING INFORMATION
DESCRIPTION The is a compact, high efficiency, and low voltage step-up DC/DC converter with an Adaptive Current Mode PWM control loop, includes an error amplifier, ramp generator, comparator, switch pass
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DISCONTINUED PRODUCT
Rev.._ N-CHANNEL POWER MOS FET FOR SWITCHING S-9NSUA Features The S-9NSUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable
APPLICATIONS Mobile Phones Cordless phones and radio communication equipment Portable games Cameras, Video recorders Portable Audio Equipment PDAs
Low Power Consumption : μa (TYP.) Dropout Voltage : mv @ ma : mv @ma Range :.8V to.v Output Current : More than ma (ma limit) Low Output Noise High Ripple Rejection Rate Low ESR capacitor compatible GENERAL
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www.ablicinc.com MINI ANALOG SERIES 0.5 A Rail-to-Rail CMOS OPERATIONAL AMPLIFIER ABLIC Inc., 2009-2015 The mini-analog series is a group of ICs that incorporate a general purpose analog circuit in a small
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XC6401 Series FEATURES. TYPICAL PERFORMANCE CHARACTERISTICS Interactive Load Transient Response TYPICAL APPLICATION CIRCUITS
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High Speed LDO Regulators Low ESR Cap.Compatible,Output ON/OFFControl
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Fast Ultra High-PSRR, Low-Noise, 300mA CMOS Linear Regulator
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AH9250. Description. Pin Assignments NEW PRODUCT. Features. Applications HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH AH9250 TO92S SC59
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Low Power Consumption:.8µA (TYP.) Range :.V ~.V Range :.9V ~.V Maximum Output Current: ma (ma Limit, TYP.) @ VOUT=.V, VIN=.V Current Limiter Circuit Built-In Ceramic Capacitor Compatible Small Packages
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XC6 Series ETR8_ ma Output Current, High Speed LDO Regulators, Thermal Shutdown Function, Ceramic Capacitor Compatible GENERAL DESCRIPTION The XC6 series are highly precise, low noise, high current, positive
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S-1317 Series www.ablicinc.com 5.5 V INPUT, 1 ma CMOS VOLTAGE REGULATOR WITH.35 A SUPER LOW CURRENT CONSUMPTION ABLIC Inc., 216 Rev.1._1 The S-1317 Series, developed by using the CMOS technology, is a
NOT RECOMMENDED FOR NEW DESIGN. S-5855A Series PWM OUTPUT TEMPERATURE SENSOR IC. Features. Application. Packages.
www.ablicinc.com ABLIC Inc., 2010-2017 The, developed by CMOS technology, is a 1-wire PWM output temperature sensor IC of low current consumption that itself changes the duty ratio according to temperature.
1.5 V to 5.5 V, selectable in 0.1 V step Output voltage accuracy:
www.ablicinc.com HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR ABLIC Inc., 23-215 Rev.3.1_2 The is a positive voltage regulator with a low dropout voltage, high-accuracy output voltage, and
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