S-8120AMP LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC. Rev.1.1
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1 Rev.. LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC The is a high-precision temperature sensor IC that outputs voltage with a temperature coefficient of -8.5mV/ C and a temperature accuracy of ±.5 C. A temperature sensor, a constant current circuit and an operational amplifier are integrated on a single chip to be able to operate at.4v. The operating temperature ranges from -40 C to +00 C. The is superior in linearity over conventional temperature sensors like thermistors. It can be applied to an ever expanding wide range of applications that call for high-precision thermal control. Features Block Diagram Temperature accuracy : ±.5 C ( -0 C to +00 C) Linear : -8.5mV/ C Ta = - 0 C :.8 V typ. Ta = +0 C :.6 V typ. Ta = + 00 C : 0.78 V typ. Nonlinearity : ± 0.5 % typ. ( -0 C to +80 C ) Vss standard output Low voltage operation : Vdd min. =.4 V Low current consumption : Idd typ. = 4.5µA ( +5 C) Small plastic package ( SOT- ) + V dd V out Temperature sensor V ss Pin Assignment SOT -. Vss. Vout. Vdd ( Top view ) Seiko Instruments Inc.
2 LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR IC Absolute Maximum Ratings Item Symbol Ratings Unit Power supply voltage Vdd 6.5 V (Vss=0.0V) voltage Vout Vss to Vdd V Operating temperature Topr -40 to +00 C Storage temperature Tstg -55 to +5 C Electrical characteristics ( - 40 C Ta +00 C, Vdd=5V) Item Symbol Condition Min. Typ. Max. Unit Power supply voltage Vdd V (Vss=0.0V) Ta = - 0 C V voltage Vout Ta = + 0 C V Ta = + 00 C V Temperature sensitivity Vse - 0 Ta + 00 C mv/ C Nonlinearity NL - 0 Ta + 80 C ± 0.5 % Operating temperature Topr V Current consumption Idd Ta = + 5 C µa Seiko Instruments Inc.
3 LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR Definition of terms. voltage ( Vout ) voltage Vout is defined as the voltage between measured pin- and Vss. Vout is linearly proportional to ambient temperature. is tested for Vout at -0 C,+0 C and +00 C. voltage Vout min. max.. Temperature sensitivity ( Vse ) Temperature sensitivity Vse is defined as the average slope of the Vout versus Ta curve using the following formula. Vse = {Vout(+00) - Vout(-0)} 0 Vout(+00) : voltage at Ta=+00 C Vout( - 0) : voltage at Ta= - 0 C -0 C 0 C +0 C +00 C Ambient temperature Ta voltage Vout Vout(-0) slope : Temperature sensitivity Vout(+00) -0 C 0 C +0 C +00 C Ambient temperature Ta. Nonlinearity NL Nonlinearity NL is defined as the deviation of the Vout versus Ta curve from the best-fit straight line over the device s rated temperature range. NL = a b 00 a : The maximum deviation of the Vout vs. Ta curve from the best-fit straight line between - 0 C and +80 C. b : The difference of the output voltage between - 0 C and +80 C. b a 0 C voltage Vout Vout(-0) a Vout(+80) Vout vs. Ta curve 0 C +80 C Ambient temperature Ta a Best-fit straight line Seiko Instruments Inc.
4 LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR Load conditions Load capacitance : CL 00p F Load resistance : RL 500k Ω (Note : Do NOT connect a pull-up resistor to Vout pin.) pin- C L 00 p F R L 500 k Ω V out C L R L Seiko Instruments Inc. 4
5 LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR Typical performance characteristics Ambient temperature (Ta) - voltage (Vout) TYP MIN MAX Temperature Ta [ C] Ambient Temperature Ta - Ta [ C] Accuracy - Temperature Ambient temperature Ta [ C] TYP MAX MIN Current consumption Idd[µA] Ambient Temperature (Ta) - Current consumption (Idd typ.) Ambient temperature Ta [ C] Typical heat response from 5 C air into 00 C air Time [sec] 95 Power supply voltage (Vdd) - voltage (Vout typ.) Ta=-40 C 4 Power supply voltage (Vdd) - voltage (Vout typ.) Ta=+0 C Power supply voltage Vdd [V] Power supply voltage (Vdd) - voltage (Vout typ.) Ta=+00 C Power supply voltage Vdd [V] Power supply voltage Vdd [V] [ u] Power supply voltage (Vdd) - Current consumption (Idd typ.) Ta=+0 C Power supply voltage Vdd [V] Seiko Instruments Inc. 5
6 LOW-VOLTAGE C-MOS HIGH-PRECISION TEMPERATURE SENSOR Start up response Ta=5 C, CL=00pF, RL=0MΩ V dd ( = 6V ) V/div GND V out V/div GND 50 µ sec/div Ta=5 C, CL=00pF, RL=0MΩ V dd ( =.4V ) V/div GND V out V/div GND 50 µ sec/div Seiko Instruments Inc. 6
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8 The information herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or other diagrams described herein whose industrial properties, patents or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee any mass-production design. When the products described herein include Strategic Products (or Service) subject to regulations, they should not be exported without authorization from the appropriate governmental authorities. The products described herein cannot be used as part of any device or equipment which influences the human body, such as physical exercise equipment, medical equipment, security system, gas equipment, vehicle or airplane, without prior written permission of Seiko Instruments Inc.
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