MICROWAVE RF PRODUCTS CATALOG. Operations and MW Business Line

Transcription

1 MICROWAVE RF PRODUCTS CATALOG Operations and MW Business Line

2 MICROWAVE RF PRODUCTS CATALOG Operations and MW Business Line

3 48 Mivtza Kadesh St., Bene Beraq Israel Tel Fax Website: Catalog Reference No For custom electrical and mechanical specifications, Please contact EW and Sigint- ELISRA Sales: (or) All materials in this issue are subject to copyrights owned by Elbit Systems-EW and SIGINT-Elisra and other individuals or entities. All Other Rights Reserved. The Elbit logo is a trademark of Elbit Systems. Other companies and brands, products and service names are trademarks or registered trademarks of their perspective holders. This document is preliminary and specifications may be subject to change without further notice.

4 Table of Contents Elisra-MW Business Line 5 General 5 Subsystems & SuperComponenets 6 In House MMIC Development Suit 6 Micro-Electronics 6 Transmitters 6 Activities 7 Modern Facilities and Experienced Staff 7 COMPONENTS PRODUCTS 10 RF Switches 11 Transfer Switches 12 Hight Power Switches 12 Frequency Translators 13 Frequency Discriminator 13 Mixers 14 COMB 15 Limiter 15 Active Multiplier 16 Digitally Controlled Attenuators 17 LOG IF Amplifier 18 Linear IF Amplifier 19 Limiter IF Amplifier 19 DLVAs 20 Detector Video Amplifiers 21 Threshold Detector Amplifires 21 Low Noise Amplifiers 22 Power Amplifires 23 Pulse Power Amplifiers 23 MMIC 24 ASSEMBLIES PRODUCTION MIC s 26 Dual Channel Unit (DCU) 27 Up Converter 27 Super Heterodyne Receiver (SHR) 28 Dual Channel Front End Receiver 28 Dual Input Front-End Receiver 29 RF Receiver 29 Switched Filter 30 Up/Down Converter 30 3

5 S-Band Transponder 31 Polarity Switch 31 Dual Band LO Distributor 32 Dual Output Front End Receiver 32 DIFM Receiver 33 Built in Test (BIT) Unit 33 Dual Output AGC Unit 34 Amplifier & Detector 34 T/R Module 35 FTO 35 Input Amplifiers 36 Data Link Front End 36 Data Link Transmitter 37 X-Band RF Front End 37 Extended Range DLVA Assy 38 Frond End Receiver 38 Test Oscillator 39 Frequency Synthesizer 39 SOLID STATE TRANSMITTERS 42 High Power Systems 1MHz-6GHz, up to 2000Watts 43 Solid State Power Amplifier 30MHz-500MHz 44 4 MICROWAVE RF PRODUCTS CATALOG NO

6 Elisra-MW Business Line Assemblies and Subsystems in Various RF & Microwave Technologies General Elisra-MW Business Line is a recognized leader in sophisticated electronic systems, subsystems and supercomponents (Integrated Multi-function Assemblies) for the defense and commercial markets. Elisra-MW Business Line has over 45 years of proven experience in supplying best-of-class and state-ofthe-art supercomponents and subassemblies for a wide variety of RF and microwave applications covering the frequency range of DC to 50 GHz. Elisra-MW Business Line has gained vast experience in all relevant technologies required to design, develop and produce passive and active microwave products as follows: Main Technologies Vs Products Modern production facilities operating under a stringent framework of quality assurance standards have established Elisra-MW Business Line as a world class and preferred supplier of products with unsurpassed reliability. The Elisra-MW Business Line has cooperated with major EW system suppliers throughout the world. Our teams have worked with other development teams and shared efforts in a large variety of EW programs, such as RWRs, ECMs, ESMs, Elint, MWS COM-JAM, SIGINT and others. The mutual efforts of our engineers together with the EW system engineers generate definition of microwave subsystems which enable the system to achieve optimization in performance and costs which has been implemented in technologies within Elisra-MW Business Line s Microwave control and expertise such as Supercomponents and MCMs, discrete components sub-assemblies and more. Technologies Multi-Layer RF Circuits High Reliability MIC & MMIC MCM Connectoriesed Integration Si, GaAs, GaN, V/LDMOS Components Thin-Film & Thick-Film Opto-Electronics Packaging RF & Digital Integration Products Recievers Transmitters Transponders Power Amplifiers Synthesizers & RF Sources Datalink Transmitters Repeaters Low & High Power PIN Diode Switches DLVA's Digital & Analog MCM Elisra-MW Business Line s highly skilled teams of engineers and technicians, renowned for their technological expertise, has been the cornerstone of our leadership status in both military and commercial markets. Elisra-MW Business Line is an excellence center in global scale for microwave and miniaturization technologies. 5

7 Subsystems & SuperComponenets Elisra-MW Business Line can provide excellent costeffective solutions to these challenges. Such intimate effort of our and your engineering teams can generate subsystems such as superheterodyne receivers (SHR), IFM receivers, lowpower RF ECM Systems, video transmitters, Front End Receivers (FER), etc. Implementation of such subsystems can result in a line replaceable unit (LRU), stand alone units/boxes or shop replaceable units (SRU) or subassemblies. SuperComponenets (Integrated Multi-function Assemblies) A complete miniaturized subsystem, consisting of quality microwave components densely packaged into one enclosure. Supercomponents represent an answer to the everpresent challenge of integrating high microwave performance into small packages. As a recognized leader in the development and manufacture of supercomponents, Elisra-MW Business Line has leveraged its knowledge-base of diverse technologies and microwave components into providing the best possible subassemblies on the market today. These miniaturized subsystems consist of numerous microwave components which are assembled into a small package. The package includes such diverse components as amplifiers, switches, oscillators, filters and MMIC devices. Every component is carefully designed and adapted to meet full performance custom-specifications, while taking into account the particularly compact supercomponent enclosure requirements. Since compact integration eliminates many connector interfaces, overall electrical performance is often enhanced. Our supercomponents frequently demonstrate improved VSWR and enhanced gain and phase characteristics. In House MMIC Development Suit Passive and Active 0.15um PHEMT GaAs MMICs D.C-50GHz Passive components printed on Hard substrates Multi Function Integrated Circuits Multi - Layer Technology In House On-Wafer (Probe Station) Testing Multi Layer Buried Components Micro-Electronics Elisra-MW Business Line s Microelectronics group has been a leader in the innovative utilization of hybrid technologies for over 45 years. Our hybrid products are key elements in EW systems produced by some of the major manufacturers of the world. With core competencies in hybrid technologies we have been able to offer advanced products with superior and reliable performance, such as: Detector Log Video Amplifiers (DLVAs) Logarithmic IF Amplifiers Frequency Discriminators Expertise in thin/thick film and MCM technologies, backed by modern facilities and know-how, has made Elisra-MW Business Line a distinguished contender in the hybrid product arena. Transmitters Elisra-MW Business Line s RF Transmitter Activity, a section within the company s Microwave Business Line, is a technological leader in the design and development of a wide range of compact reliable RF transmitters and amplifiers for communications and ECM applications. Our RF Transmitter section capabilities are proven in the microprocessor control and computer interfaces used in its transmitters and amplifiers. Our development Main Features enable sophisticated real-time control of amplitude, frequency, modulation type and in-depth BIT. Just as well, our products offer high speed solidstate switching and frequency hopping technologies. Our standard product range is enhanced by flexible production facilities, enabling us to handle customized orders rapidly and cost effectively. The facility at Elisra-MW Business Line is equipped to deal with most methods of environmental testing. Tests are performed during R&D qualification (MIL-STD-810). Environmental stress screening (utilizing MILSTD- 2164) is applied on 100% of our amplifiers. Our growing list of satisfied clients list includes notable companies from Europe, Asia and Israel Optimal Operating Efficiency and Linearity (Class AB) Solid State Architecture: GaAs, GaN, MOSFET, LDMOS, Bipolar Digital full Status Monitoring System Structures include: Amplifiers, OPU, Antennas and Installation Support. Remote Operation: RS232 / RS422 / RS485/ USB / Dry Contact 6 MICROWAVE RF PRODUCTS CATALOG NO

8 Activities Microwave Multi-function Assemblies Multi-Function Assemblies (MIC s) Frequency Synthesizers RF & Microwave- Receivers mmw Sub-Assemblies Pin Diode Control Devices High Power Systems SS HPA Hp Switches Pulsed AMPS TWT Replacement Microwave Links Transmitters Modern Facilities and Experienced Staff CAD Tools Clean Room Automatic Bonder Automatic Test Setup Laser Welder Hermetically Sealing Environmental Lab Thermal Vacuum Chamber Quality Assurance Microelectronics & Electroptics Receiving Products MCM s Custom Hybrids Laser Receivers 7

9 P

10 COMPONENT COMPONETS PRODUCTS RODUCT

11 COMPONENTS PRODUCTS RF Switches 11 Transfer Switches 12 Hight Power Switches 12 Frequency Translators 13 Frequency Discriminator 13 Mixers 14 COMB 15 Limiter 15 Active Multiplier 16 Digitally Controlled Attenuators 17 LOG IF Amplifier 18 Linear IF Amplifier 19 Limiter IF Amplifier 19 DLVAs 20 Detector Video Amplifiers 21 Threshold Detector Amplifires 21 Low Noise Amplifiers 22 Power Amplifires 23 Pulse Power Amplifiers 23 MMIC MICROWAVE RF PRODUCTS CATALOG NO

12 RF Switches (Series of SPST to SP16T Switches) Narrow, wide and Ultra-wide band: GHz Solid State Low Insertion Loss: 1.2dB to 2.8dB (Depend on the type of the switch) High Isolation: 60dB typ. VSWR: 1:8:1 typ. Integral TTL driver Bias VCC: (+5V/ -12V) (Unless it will be define differently) Power Handling Capability: 100mW to 1W Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Reflective Switching Speed: 25 ns typ. Non- Reflective Switching Speed: 35 ns typ. Hermetically sealed Options Low Video Leakage Switches Without Drivers Another Frequency Band Lower Insertion Loss Can Be Provided COMPONENTS PRODUCTS 11

13 Transfer Switches Narrow, wide and Ultra-wide band: GHz Low Insertion Loss: 1.5dB typ. High Isolation: 50dB typ. VSWR: 1:5:1 typ. Integral TTL driver Bias VCC: (+5V/ -12V) (Unless it will be define differently) Power Handling Capability: 200mW Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Hermetically sealed Options Other Frequency Bands are Available Higher Isolation is Available CASE 1 Hight Power Switches Power Handling 100 Watt CW 6-8 GHz Frequency Range Coverage Patented Transition Technology SPDT Configuration Low Loss 1.0 db typ. High Isolation 24dB typ. Compact and Lightweight VSWR Highly Reliable MIC Technology Integral TTL Driver Switching Speed Special Heat Dissipation Methodology Options RF Connectors are SMA Female Includes Built-in Driver Switches Can Be "Tailored" to Customer's Requests CASE 2 12 MICROWAVE RF PRODUCTS CATALOG NO

14 Frequency Translators (Phase shifter) High Performance MIC Quadrature Hybrid Design 6 Bit TTL Digital Drive Low Insertion Loss Power Handling Capability: 0.1W (CW) Operating Temperature: -55 C to+105 C Range Temperature Coefficient: db/ C Switching Time: 30 ns max Power Supply Req. at 50 ma: 5V at 200 ma Frequency Translation: 0 to 100 khz RF Connectors: SMA female Options Other Frequency Ranges Frequency Discriminator Change of center frequency & Bandwidth Internal limiter amplifier Change of center frequency accuracy DC Power supply: (+12V/ -12V) VSWR: 2:1 typ. Video load: 100ohm Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Very good Rise time / fall time SMA connectors or Drop in Pins. Hermetically sealed Options Change of Slope Matching between units External offset adjustment Limited IF output of +10dBm COMPONENTS PRODUCTS 13

15 Mixers Mixer Drive Level Characterestics Narrow, wide and Ultra: wide band GHz Local Drive level: Low, Med., High & Super high Low Insertion Loss: 8dB typ. Isolation L to I: 25 to 30dB typ. Local Drive Level Low Drive Drive Level Suffix L Local Drive Level Range (dbm) +10 to +13 Typical 1 db Compression Point (dbm) Typical Input Intercept Point per min LO Drive (dbm) Isolation L to R: 25 to 30dB typ. VSWR: 2.5:1 typ. Operating Temperature Range: -55 C to +105 C Med. Drive High Drive M H +13 to to Storage Temperature Range: -65 C to +125 C Hermetically sealed Super High Drive S +20 to Intermodulation Suppression FRF HARMONICS High Frequency Mixers FLO HARMONICS >70 65 > >70 >70 >70 >70 >70 FRF HARMONICS Low Frequency Mixers FLO HARMONICS > >70 >70 >70 >70 >70 5 >70 >70 >70 >70 >70 14 MICROWAVE RF PRODUCTS CATALOG NO

16 COMB Change of center frequency & Bandwidth. Input VSWR: 2:1 typ. Excellent spurious rejection Power Handling 10mW typ. Very good phase noise (offset) Bias VCC (+5V) unless it will be define differently. Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Hermetically sealed Options Other modules of Combs are available upon request. CASE Limiter Frequency range: 20MHz to 18 GHz Insertion loss: 2.0 db typ. DC Block: Built-In DC Block VSWR: 2 : 1 Typical LIM Threshold: +6.0 dbm Leakage +20dBm: 12dBm typ. Leakage +30dBm [1Watt]: 14dBm typ. Operating Temp.: -45ºC to +85ºC Storage Temp.: -65ºC to +125ºC Temp. Cycling: -65ºC to +125ºC Shock: 50 G,11mSec Vibration: 20 G, 100 to 2KHz Options Other modules of limiters are available upon request. IN OUT CASE 2 CASE 3 COMPONENTS PRODUCTS 15

17 Active Multiplier Input frequency range: to 110 MHz Input power range: +5 to +9dBm Output frequency range: 8.38 to 8.88 GHz Output Power: -25dBc minimum Harmonics: 8±2 dbm minimum Subharmonics and Spurious: -50dBc minimum Isolation between outputs -40 db minimum Switching speed: 30 nsec maximum Video leakage: -50dBc minimum (For PRF -180μSec and pulse width 330 nsec, pulse rise and fall time -20nSec, measured with spectrum Analyzer) Control: 1 TTL lines Control logic "0" logic : Out 1 "1" logic : Out 2 DC power +15V/425mA max -15V/20 ma max Additional spurious due to modulation on the DC line: -50dBc (when 1KHz pulses with amplitude 1OOmV will be applied to the +15Vdc pin) Connectors RF: SMA-F DC: RFI solder pins Control: Solder pins 2.5 SMA/F (x3) 6 MOUNTING THREADS NC 4-40 Options Other modules of active multipliers are available upon request OUT IN CON -15V +15V GND OUT MOUNTING SURFACE 16 MICROWAVE RF PRODUCTS CATALOG NO

18 Power Divider/Combiners Narrow, wide and Ultra-wide band GHz High performance Low Insertion Loss: 1.0dB typ. High Isolation: 18dB typ. VSWR: 1:5:1 typ. Phase Balance: ±0.8 typ. Amplitude Balance: ±0.2dB typ. Power Handling Capability: 100mW to 1W Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Hermetically sealed Options Other frequency bands are available Lower Insertion Loss is available CASE 1 Digitally Controlled Attenuators High performance MIC Quadrature Hybrid Design Dynamic Range: 60dB Temperature Compensated Non Reflective VVA upon request Power Handling 100mW (CW) Minimum Attenuation Range 60dB Accuracy of Attenuation ±1dB Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Hermetically sealed Options Other Models of Digitally Controlled Attenuators are Available Upon Request CASE 1 CASE 2 CASE 2 CASE 3 H4 H2 H2 H5 J9 COMPONENTS PRODUCTS 17

19 LOG IF Amplifier Extended frequencies Bandwidth between 30MHz up to 630MHz Dynamic range: 80dB Log Linearity: ±0.6dB DC Power supply: (+12V / -12V) VSWR: 2:1 typ. Video load: 100ohm Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C Excellent Rise time / fall time SMA connectors or Drop in Pins Hermetically sealed Options Change of center frequency & Bandwidth Change of Slope Matching between units External offset adjustment Limited IF output of +10dBm CASE 1 CASE 3 CASE 2 18 MICROWAVE RF PRODUCTS CATALOG NO

20 Linear IF Amplifier Frequency Bandwidth: 10MHz or 20MHz RF Gain to Video: 80dB IF Output: +10dBm Gain control: 50dB DC Power supply: (+12V/ -12V) VSWR: 1.5:1 typ. Video load: 100ohm Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C SMA connectors or Drop in Pins Hermetically sealed Options Change of center frequency & Bandwidth Limiter IF Amplifier Frequency Bandwidth: 10MHz or 20MHz Phase variation: ±3º IF Output: +10dBm Dynamic range: 65dB DC Power supply: (+12V/ -12V) VSWR: 1.5:1 typ. Video load: 100ohm Operating Temperature Range: -55 C to +105 C Storage Temperature Range: 65 C to +125 C SMA connectors or Drop in Pins Hermetically sealed Options Change of center frequency & Bandwidth COMPONENTS PRODUCTS 19

21 DLVAs Typicals of DLVAs: - DC Coupled - CW IMMUNE - AC Coupled - SDLVA - Successive Excellent Accuracy & Stability Low power consumption Dynamic range: 50dB Fast Rise time and fall times DC Power supply: (+12V/ -12V) Video load: 100ohm Operating Temperature Range: -55 C to +105 C Storage Temperature Range: -65 C to +125 C SMA connectors or Drop in Pins Subminiature Hermetic package Options Change of Slope. Other wide-band frequency ranges from 0.5 to 40 GHz or narrower bands with optimized performance characteristics. CASE 1 CASE 2 20 MICROWAVE RF PRODUCTS CATALOG NO

22 Detector Video Amplifiers Operating Frequency: GHz Operating Voltage: ±15V ±1v Current drain(max): 40mA Video Output Voltage for (-20dBm RF power input): 200±35mV RF connectors(rf In): SMA female VSWR (maximum): 2:1 Operating Temperature Range: -62 to + 85 deg C Load impedance :50 Ohm DcVoltages,Vout,Gnd: Via solder pins TTL response for pulse length (0. to 65 usec): <20nSec RF Input Power: -20 to 0dBm Application EW Systems Technology Thin & Thick Film PIN Diode Switches Drop in Hybrid Amplifiers Hermetically Sealed (Laser) Threshold Detector Amplifires Frequency Range: 6-18/18-40 GHz Sensitivity: -20dBm Dynamic Range: -20 to 0dBm Coupling: DC Coupled Raw Video Output: Linear Synthetic Video Output: TTL Pulse Width: 100nSec to CW Pulse Rise Time: 20nSec Max. Raw Video Output Impedance: 1K ohm Synthetic Video Output Impedance: 1K ohm Input Impedance: 50 ohm Power Handling: 17dBm Max. Threshold Setting: -20 to 0dBm Power Supply: +15V ; 30mA -15V ; 30mA Environmental Spec.: MIL-E Operating Temperature: -20 to +55 C Application EW Systems Technology Thin & Thick Film PIN Diode Switches Drop in Hybrid Amplifiers Hermetically Sealed (Laser) COMPONENTS PRODUCTS 21

23 Low Noise Amplifiers Narrow, Wide, and Ultra-Wide Band GHz Low Noise: 2 db Ultra-Wide, 0.9dB Narrow Band Output Power up to 37dBm Sat (5W) Gain: between 7 to 70 db Custom Defined Amplifiers & Modules SMA connectors or Drop in Pins Subminiature Hermetic package Options Slope Amplifier between 2-18GHz Temperature Compensation Input Power Limiting Gain Match Phase Match Any type of Screening CASE 1 CASE 2 22 MICROWAVE RF PRODUCTS CATALOG NO

24 Power Amplifires High power, High efficiency Reliability MIC Technology Internally built in protections: Over voltage, Reverse Polarity, Supply Sequencing and Load Mismatch Gain: Between 7 to 70 db Custom Defined Amplifiers & Modules Connectorized or Drop in Pins Hermetic package Options Gain temperature compensation Extended operating temperature Dual matched outputs (Gain, Power and Phase) TTL controlled DC shut down Pulse Power Amplifiers High power output: up to 200Watt Integrated power supply: 16 to 32 Volt Fast switching speed: 200 nsec typ Built in test circuit Variable duty cycle: up to 10% External synchronization Load VSWR protected Connectorized Hermetic package CASE 1 CASE 2 COMPONENTS PRODUCTS 23

25 MMIC Monolithic Microwave Integrated Circuit Key Technologies 0.15μm PHEMT GaAs MMICs Products Customized Millimeter Wave MMICs High frequency up to 50GHz Multi-Function Chips Capabilities Passive and Active 0.15μm PHEMT GaAs MMICs DC-50GHz Passive components printed on Hard substrates Multi Function Integrated Circuits Multi - Layer Technology In House On-Wafer (Probe Station) Testing Multi Layer Buried Components Advantages In House MMIC development suit (simulators, analysis etc.) Customized design In House RF integration and testing capabilities Experienced teams of engineers, technicians, assembles etc. GaAs Products examples Amplifiers Switches Mixers Multipliers DCAs Attenuators Equalizers Phase Shifters Multi Function Integrated Circuits - RF Core. For more information - See Catalog Number MICROWAVE RF PRODUCTS CATALOG NO

26 PRODUCTIO ASSEMBLIES PRODUCTION MIC s MIC s

27 ASSEMBLIES PRODUCTION MIC s Dual Channel Unit (DCU) 27 Up Converter 27 Super Heterodyne Receiver (SHR) 28 Dual Channel Front End Receiver 28 Dual Input Front-End Receiver 29 RF Receiver 29 Switched Filter 30 Up/Down Converter 30 S-Band Transponder 31 Polarity Switch 31 Dual Band LO Distributor 32 Dual Output Front End Receiver 32 DIFM Receiver 33 Built in Test (BIT) Unit 33 Dual Output AGC Unit 34 Amplifier & Detector 34 T/R Module 35 FTO 35 Input Amplifiers 36 Data Link Front End 36 Data Link Transmitter 37 X-Band RF Front End 37 Extended Range DLVA Assy 38 Frond End Receiver 38 Test Oscillator 39 Frequency Synthesizer MICROWAVE RF PRODUCTS CATALOG NO

28 Dual Channel Unit (DCU) Super Heterodyne Receiver Frequency Coverage: VHF to S Band 2 Phase and amplitude matched channels Instantaneous Band Width: up to 500 MHz High sensitivity (Front end depended) Wide dynamic range All Local oscillators are internal and synthesized with external reference CK Fast setting time: 100 nsec Small size: 3U cut out (16x10x2 cm) Applications EW Receiver Technologies SMT Up Converter Frequency: GHz Contains DCAs to Set the Gain Modulation of Signal (Phase, Amplitude, and Pulse Modulation) Very Fast Settling Time: 100nSec Suppression of Unwanted Signals to prevent them from Reaching the Transmitter Low Overall Noise Floor Small Size: 3U Cut-Out: 16x10x2 cm Applications EW Systems Technologies RF Multilayer including Micro Strip, MMIC & SMT ASSEMBLIES PRODUCTION MIC s 27

29 Super Heterodyne Receiver (SHR) RF Input Frequency Range: GHz Triple Down-Conversion Dynamic Input: -70 to 0 dbm Noise Figure: 17 db Typ Phase Tracking (Pairs): ±4 Switching Speed: 250 nsec Spurious: 45 dbc IF Output Frequency Range - Wide Band 1: 2-6 GHz Wide Band 2: MHz (AUX) Variable Bandwidth - BW1: 500 MHz BW2: 140 MHz BW3: 40 MHz BW4: 4 MHz Phase Matching (Pairs): ±15º Low Power Consumption 5W Applications EW Receiver Technologies MIC Hermetically Sealed (Laser) Dual Channel Front End Receiver Frequency Range: , 1-18, 2-18 GHz High Output 1 db Compression: +18 dbm Low Noise Figure: 10 db Integrated Test Generator B.I.T Capabilities: TTL Compatible Low Power Consumption: 10 Watts Application EW Systems Technology Microstrip MIC MMIC Switches Comb Generator SMD Hermetically Laser Sealing 28 MICROWAVE RF PRODUCTS CATALOG NO

30 Dual Input Front-End Receiver Wide Band Coverage: 18 to 40 GHz Down-Converted: 2 to 16.5 GHz High-Input Dynamic Range High Power Protection Internal MMW Bit Generators Supports Two Receiving Antennas Extermely Compact Housing Applications EW Systems Technologies MMIC & SMT Hermetically Sealed (Laser) RF Receiver Frequency Range: 2-18 GHz The frequency range is divided to five sub bands Q1- Q5 (band edge cross-over frequency) RF to IF Output RF to Video Output High Dynamic Range RF to IF Converter VSWR in/out: 2:1 max. Recovery time: 100 nsec max. Power Handling Capability: +24 dbm max Third Order Intercept Point: +18 dbm min Isolation of the SPDT switch: 45 db min Integrated unit Application EW Systems Technology Hermetically Sealed (Laser) Suspended Quintuplexer PIN Diode Switches Microstrip MMIC ASSEMBLIES PRODUCTION MIC s 29

31 Switched Filter Frequency Range: 6-18 GHz 6 Channel Preselector High Speed Switching High Rejection Filters Out of Band Rejection: 55 dbc min. Gain: 3 12 db VSWR In/Out: 2:1 max. 1 db Compression Point (Output): +13 dbm min. Noise Figure: 14 db max. 3rd Order Intercept Point (Output): +20 dbm min Switching Speed: 45 nsec min. SP4T Isolation: 70 db min. Up/Down Converter Frequency Range: 6-18 GHz IF Output: 3 GHz High Dynamic Range Down Converter High Speed Switches Application EW Systems Technology Drop in Components MMIC Switches Hermetically Sealed (Laser) Application EW Systems Technology Microstrip MMIC Amplifier PIN Diode Switches Comb Filters Hermetically Sealed (Laser) 30 MICROWAVE RF PRODUCTS CATALOG NO

32 S-Band Transponder S-Band Full Duplex High Selectivity Wide Dynamic Range, AGC (Up Converter & Down Converter) Built-In Test (BIT) Off-the-Shelf Components (Special Design: Filters, Power Amplifiers.) Applications EW Systems, Missiles Technologies SMT Polarity Switch 1-18GHz SPDT with Limiters Power Handling: CW: +30dBm (1W) Pulse: 100W (1uSec pulse 2% DC) Isolation: 30dB Min. VSWR: 1.8:1 Power supply: +12VDC/65mA Temperature range: C to C Application EW Systems Technology Microstrip MIC SMT Hermetically Laser Sealing ASSEMBLIES PRODUCTION MIC s 31

33 Dual Band LO Distributor Frequency Range:DUAL BANDS X: 8 9 GHz UHF: 870 MHz Splitting & Amplifying Detects Input/Output Power Level: TTL Compatible Excellent In/Out VSWR: 1.3:1 Excellent Output Stability: Less than ±1 dbm High Channel Isolation: 60 db min Low Output Spurious Level Over All Power Consumption: 12W Application EW Systems Transponders Rx/Tx Assemblies Dual Output Front End Receiver Frequency Range: 2-18 GHz Low Noise Figure: 10 db High Output 1 db Compression: +18 dbm High Path Isolation: 60 db Low Power Consumption: 9W Low Spurious Level Internal Noise Source For BIT Application EW-Front End Receivers Technology Microstrip, Strip Line MIC, MMIC Comb Generator SMD Hermetically Laser Sealing Technology Couplanar Wave Guide MIC For X-Band SMD, MMIC For UHF Channel 32 MICROWAVE RF PRODUCTS CATALOG NO

34 DIFM Receiver Digital Instantaneous Frequency Measurement Frequency range: GHz Output: 12 Bit TTL Internal or external triggering Frequency resolution: 1.1MHz Pulse width range: 50nSec to CW SNR: 3dB Noise level: -50dBm No need for calibration Application EW-Front End Receivers Technology SMT MIC Hermetically Laser Sealing Built in Test (BIT) Unit Output Frequency: 5/8/12/15 GHz Frequency Accuracy: ±5 MHz Harmonics: Better than -25 dbc Spurious: Better than -60 dbc Type of Output: CW / Pulse Attenuation Control (DCA): Low: No Attenuation High: 30 db Attenuation Pulse Command (BMP): Differential TTL Rise Time: 25nSecMax. Application EW Systems Technology SMT MIC Hermetically Laser Sealing ASSEMBLIES PRODUCTION MIC s 33

35 Dual Output AGC Unit Frequency Range: 2-6 GHZ 0 Att.: 40 db Attenuation Range: 0-31 db Switching Speed: 250 nsec Application EW Systems Technology Thin Film Hybrid Balanced Amplifiers PIN Diode Switches Hermetically Sealed (Laser) Amplifier & Detector Frequency Range: GHz Input Power: -32dBm min, to -10dBm max Output Power: +13dBm min, to +16dBm max N.F.: 7.0 db max Flatness: ±1 db max VSWR: 1.7:1 max DC Supply: +12V / 420mA RF Leakage: 90dBc Spurious: 70dBc Recovery Time: 10 ns max Detection for CW and Pulse Signals Output +13dBm Output Power: 500mV min Output +10dBm: 400mV max Rise / Fall Time: 15ns Detector Load: 100 ohm Application EW Systems Technology Microstrip MIC Hermetically Laser Sealing 34 MICROWAVE RF PRODUCTS CATALOG NO

36 T/R Module 2-6 / 6-18 GHz 5 bits Digital-controlled phase shifter 5 bits, 31 db Digital controlled attenuator High Power MMIC amplifiers (4 Watts typ.) Low noise MMIC amplifiers High power protector switch / limiter T/R switches and Circulator Designated digital control Circuit Application EW Systems Radar Technologies MMIC & SMT GaN Power Amplifier FTO Frequency Range: X-band Tx Power: up to 1 Watt Rx NF: < 1.4 db Amplitude Control: Tx and Rx Phase Control: Common Switching Speed: 25 nsec Application Airborne Radar Technology Microstrip MIC Hermetically Laser Sealing ASSEMBLIES PRODUCTION MIC s 35

37 Input Amplifiers Frequency 2-18 GHz Contain BIAS TEE drivers which enable external power feed of Amplifier To set the Noise Figure of the RF chain it is connected to. Contain Test source for calibration. Application EW Systems Technologies Micro strip MIC & MMIC Hermetically Sealed (Laser) Data Link Front End TX Up Conversion RX Down Conversion High Performance: RX NF 3 db RX Group Delay 2 nsec Application EW Systems Technologies Micro strip MIC & MMIC Hermetically Sealed (Laser) 36 MICROWAVE RF PRODUCTS CATALOG NO

38 Data Link Transmitter No. of Channels: Two (I&Q channels) Type of Modulation: BPSK Phase imbalance: ±2 o IF Frequency: Designer can select Transmit Frequency: X Band (10.3 to 10.5 GHz) Output power abd Flatness: 25W Carrier Rejection: 26 dbm min. Power Supply: 28 ±4V Size: 260mm X 90mm X 89mm (H) Weight: <2.8 Kg Applications EW Systems, Missiles Technologies SMT MIC & MMIC Hermetically Sealed (Laser) X-Band RF Front End Frequency range: GHz Frequency selection: Through three wire serial link (Data, Clock, Strobe), 160 Bit serial Noise Figure: Better than 3.5dB, better than C RF threshold input level: -110dB (typ.) Input signal range: -110 to-40dbm No of freq spots of operation: 20(min) Final IF output Freq.: 19.8 MHz ± 2.0KHz IF bandwidth: ±10 MHz Input signal dynamic range: 70 db(min) Max input power (survival): +30dBm CW Power input: 28 ± 4 Volt RRSI: 0 to 5Volt range Applications EW Systems Technologies SMT MIC & MMIC Hermetically Sealed (Laser) ASSEMBLIES PRODUCTION MIC s 37

39 Extended Range DLVA Assy Frequency Range: 1-18 GHz TSS (20 MHz Video BW): -67 dbm Logging Range: -67 to 0 dbm Max. RF Input Power: 5W CW Max. Peak (1μs width: 1 khz PRF): 500W peak SP2T RF Switch Isolation: 60 db min. RF Output: 0 dbm min. at -40dBm input 2nd harmonic level 7 dbc min. Pulse Width: 50 nsec to 150μsec DC Power Protected for Reverse Polarity: Over Voltage up to ±18V Short Circuit Protection and EMI/EMC -15 VDC; 1.3A max. (1A Typ) -15 VDC; 300 max. Log Slop: 70mV typ Log Linearity: (-64 to 0 dbm) ±2 db Log Accuracy: ±3 db DC Offset: ±100 mv Matching Between Units: ±3 db Frequency Flatness: ±0s1.5 db Application EW Systems Technology Thin & Thick Film PIN Diode Switches Drop in Hybrid Amplifiers Hermetically Sealed (Laser) Frond End Receiver Frequency Range: S Band It is an outdoor unit and it located nearby the antenna The FE module has two main routes Tx and Rx At RX rote Low NF (2dB typ.) At TX rote High power transmitted (up to 500W CW) IP3 30dBm High out of band rejection Tx/Rx ISO 28dB Built In Test RSSI ability Self-cooling Quarter Wave Lightning Protector built in Protection against open/short The FE uses an external DC Power Supply The FE communicates with a central controller via RS-485 interface bus and discrete control inputs The FE support software updates from the main connector Application EW-Front End Receiver. Broadband Technology Microsrrip MIC, MMIC SMT Hermetically Laser Sealing 38 MICROWAVE RF PRODUCTS CATALOG NO

40 Test Oscillator Frequency Coverage: GHz Step size: 10 MHz Harmonic: 35 dbc Setting Time: 150 usec Applications Naval EW Systems Technologies SMT MIC Hermetically Laser Sealing Frequency Synthesizer Frequency Coverage: 2-18 GHz Low Spurious: <-70 dbc Harmonics: -50 dbc max Noise Floor: -140 dbc Phase-noise: -105 KHz Ultra Wideband Frequency Coverage Setting time: <200 nsec Resolution 1 Hz Phase and Frequency Coherent FM Modulations Built-in Front Panel Control: Option Applications EW Radar Technologies SMT MIC Hermetically Laser Sealing ASSEMBLIES PRODUCTION MIC s 39

41 40 MICROWAVE RF PRODUCTS CATALOG NO

42 TRANSMITTER SOLID STATE TRANSMITTERS STATE

43 SOLID STATE TRANSMITTERS High Power Systems 1MHz-6GHz, up to 2000Watts 43 Solid State Power Amplifier 30MHz-500MHz MICROWAVE RF PRODUCTS CATALOG NO

44 High Power Systems 1MHz-6GHz, up to 2000Watts Optimal Operating Efficiency and Linearity (Class AB) Solid State Architecture: GaAs, GaN, MOSFET, LDMOS Digital full Status Monitoring System Structures include: Amplifiers, OPU, Antennas and Installation Support. Remote Operation: RS232 / RS422 / RS485/ USB Quality Control System based on AS9100 Together with the following standards: MIL-M-38510, MIL-STD-810, MIL-E-5400, MIL-E-16400, MIL-STD-2164, MIL-STD-461/462, IPC 610A, IPC 620 Full rated power at VSWR 3:1 with constant current ambient temperature of 55 C LPF and Dummy Load switch included internally High speed T/R switch (optional ) High reliability, fully qualified to meet the most extreme environmental conditions Fully protected against high VSWR (open/short), high input power, thermal overload, over/under voltage and reverse polarity, graceful degradation AC Supply: 100:240 VAC Model Number Frequency Range (MHz) Rated Power (Watt) Min. Technology Main Feature Power Consumption max. Weight in kg 4500A W LDMOS 28V/110A 50 19''X7U 4D01A W LDMOS Fast T/R SW. Included 28V/110A 50 19''X7U 4910A W LDMOS 48V/100A 55 19''X7U 4600A W LDMOS 28V/80A 52 19''X5U 4D02A W LDMOS 28V/168A 51 19''X7U 4600A W LDMOS 28V/75A 51 19''X5U 4D03A W LDMOS 28V/120A 62 19''X7U 4930A W LDMOS 48V/70A 55 19''X7U 4500A W GaN 28V/78A 55 19''X7U 4500A W GaN 28V/150A 71 19''X7U 4920A W LDMOS 48V/160A 71 19''X7U 4600A W LDMOS 28V/65A 42 19''X5U 4174A W LDMOS 28V/154A 48 19''X5U 4930A W LDMOS 48V/80A 58 19''X7U 4920A W LDMOS 48V/140A 60 19''X7U 4620A W GaN 28V/45A 40 19''X7U 4620A W GaN 28V/100A 45 19''X7U 4600A W GaN Fast T/R SW. Included 28V/32A 42 19''X5U 4940A W GaN Bank Filters Included 48V/90A 55 19''X7U 4800A x100W LDMOS&GaN Fast Bank Filters 28V/110A Included 50 19''X7U 4900A W For custom electrical GaN and mechanical specifications, please contact 28V/35A 45 19"X3U 4620A EW and 500W Sigint- ELISRA Sales: LDMOS microwave@elbitsystems.com (or) V/110A 51 19''X5U Size SOLID STATE TRANSMITTERS 43

45 Solid State Power Amplifier 30MHz-500MHz Innovative GaN Transistor Module Technology Broad Band Frequency Range of MHz Full RF Power of 1KW for up to VSWR of 2:1 Extractable Amplifier Modules for Ease of Configuration / Maintenance Space Saving 19 x7u Drawer New Cooling Combination of Heat Pipes / Air Conduction 44 MICROWAVE RF PRODUCTS CATALOG NO

46 For custom electrical and mechanical specifications, Please contact EW and Sigint- ELISRA Sales: (or) Catalog Reference No Operations and MW Business Line Elbit Systems Ltd. - EW and SIGINT-Elisra Operations and MW Business Line 48 Mivtza Kadesh St., Bene Beraq Israel Tel Fax Website: microwave@elbitsystems.com