N-Channel 240 -V (D-S) MOSFET

Transcription

1 N-Channel -V (D-S) MOSFET TNK/TNKL/BS7KL PRODUCT SUMMARY Part Number V DS Min (V) r DS(on) ( ) V GS(th) (V) I D (A) Q g (Typ) TNK V GS = V.8 V GS = V.8 to FEATURES BENEFITS APPLICATIONS Low On-Resistance: Secondary Breakdown Free: 6 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature Run-Away High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. Telephone Mute Switches, Ringer Circuits Power Supply, Converters Motor Control TO-6 (SOT-) TO-6AA (TO-9) TO-9-8RM (TO-8 Lead Form) G S Top View TNK Marking Code: Kywl K = Part Number Code for TNK y = Year Code w = Week Code l = Lot Traceability D S G D Top View TNKL Device Marking Front View S TN KL xxyy S = Siliconix Logo xxyy = Date Code D G S Top View BS7KL Device Marking Front View S BS 7KL xxyy S = Siliconix Logo xxyy = Date Code Standard Part Number ORDERING INFORMATION Lead (Pb)-Free Part Number Option TNK-T TNK-T E With Tape and Reel Folding Option TNKL-TR TNKL-TR E BS7KL-TR BS7KL-TR E Spool Option ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol TNK TNKL/BS7KL Unit Drain-Source Voltage V DS Gate-Source Voltage V GS Continuous Drain Current (T J = 5 C) T A = 5 C T A = 7 C I D.6.5 A.. Pulsed Drain Current a I DM.8. Power Dissipation T A = 5 C T A = 7 C P D Thermal Resistance, Junction-to-Ambient R thja 5 b 56 C/W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR board. V W Document Number: 75 S-76 Rev. B, -Oct-

2 TNK/TNKL/BS7KL SPECIFICATIONS (T A = 5 C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ a Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = A 57 Gate-Threshold Voltage V GS(th) V DS = V GS, I D = 5 A V Gate-Body Leakage I GSS V DS = V, V GS = V na Zero Gate Voltage Drain Current I DSS T J = 55 C V DS = 9 V, V GS = V A V DS = V, V GS = V.8 On-State Drain Current b I D(on) V DS = V, V GS =.5 V.5 A V GS = V, I D =. A. Drain-Source On-Resistance b r DS(on) V GS =.5 V, I D =. A. ( ) V GS =.5 V, I D =. A. 6 Forward Transconductance b g fs V DS = V, I D =. A.6 S Diode Forward Voltage V SD I S =. A, V GS = V.8. V Dynamic a Total Gate Charge Q g.87 8 Gate-Source Charge Q gs V DS = 9 V, V GS = V, I D =.5 A.56 nc Gate-Drain Charge Q gd.5 Turn-On Time turn-off Time t d(on) 5 t r VDD V = 6 V, R L = t d(off) I D. A, V GEN = V, R G = t r 6 5 ns Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW s duty cycle %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 75 S-76 Rev. B, -Oct-

3 TNK/TNKL/BS7KL TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) Output Characteristics Transfer Characteristics.8..5 V GS = thru V. T C = 55 C 5 C Drain Current (A) I D V Drain Current (A) I D C. V.. 5 V DS Drain-to-Source Voltage (V). 5 6 V GS Gate-to-Source Voltage (V) 5 On-Resistance vs. Drain Current Capacitance r DS(on) On-Resistance ( ) V GS =.5 V V GS = V C Capacitance (pf) 5 5 C iss 5 C rss C oss I D Drain Current (A) 5 V DS Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature. Gate-to-Source Voltage (V) V GS 8 6 V DS = 9 V I D =.5 A r DS(on) On-Resiistance (Normalized) V GS = V I D =. A V GS =.5 V I D =. A.6 5 Q g Total Gate Charge (nc) T J Junction Temperature ( C) Document Number: 75 S-76 Rev. B, -Oct-

4 TNK/TNKL/BS7KL TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) Source-Drain Diode Forward Voltage 8 7 On-Resistance vs. Gate-to-Source Voltage I D = ma Source Current (A) I S.. T J = 55 C T J = 5 C T J = 5 C r DS(on) On-Resistance ( ) 6 5 I D = ma I D = 5 ma V SD Source-to-Drain Voltage (V) 6 8 V GS Gate-to-Source Voltage (V). Threshold Voltage. Variance (V) V GS(th) I D = 5 A T J Temperature ( C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-6, TNK Only) Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes:...5 P DM. t t. Duty Cycle, D = t t. Per Unit Base = R thja =5 C/W Single Pulse. T JM T A = P DM Z (t) thja. Surface Mounted. 6 Square Wave Pulse Duration (sec) Document Number: 75 S-76 Rev. B, -Oct-

5 TNK/TNKL/BS7KL TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-6AA, TNKL and TO-9-8RM, BS7KL Only) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 56 C/W. T JM T A = P DM Z (t) thja.. K t Square Wave Pulse Duration (sec) K maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 75 S-76 Rev. B, -Oct- 5

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