STGW30NC60WD. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT. General features. Description. Internal schematic diagram
|
|
- Bernard Chapman
- 5 years ago
- Views:
Transcription
1 N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type V CES V CE(sat) C I C STGW30NC60WD 600V < 2.5V 30A High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix W identifies a family optimized for very high frequency application. Internal schematic diagram Applicatio High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies Order codes Sales Type Marking Package Packaging STGW30NC60WD GW30NC60WD TO-247 Tube March 2006 Rev 3 1/14 14
2 Contents: STGW30NC60WD Contents: 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Revision history /14
3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V GS = 0) 600 V I C Collector Current (continuous) at 25 C 60 A I C Collector Current (continuous) at 100 C 30 A I CM (1) Collector Current (pulsed) 200 A V GE Gate-Emitter Voltage ± 20 V P TOT Total Dissipation at T C = 25 C 200 W T stg T j T L Storage Temperature Operating Junction Temperature Maximum Lead Temperature for Soldering Purpose (1.6mm from case, for 10 sec.) 55 to 150 C 300 C 1. Pulse width limited by max junction temperature Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 C/W 3/14
4 Electrical characteristics STGW30NC60WD 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 3. Static Symbol Parameter Test Condictio Min. Typ. Max. Unit V BR(CES) Collectro-Emitter Breakdown Voltage I C = 1mA, V GE = V V CE(SAT) Collector-Emitter Saturation Voltage V GE =15V, I C = 20A, Tj= 25 C V GE =15V, I C = 20A,Tj= 125 C V V V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V I CES Collector-Emitter Leakage Current (V CE = 0) V CE = Max Rating,Tc=25 C V CE = Max Rating, Tc=125 C 10 1 µa ma I GES Gate-Emitter Leakage Current (V CE = 0) V GE = ±20V, V CE = 0 ± 100 na g fs Forward Traconductance V CE = 15V, I C = 20A 15 S Table 4. Dynamic Symbol Parameter Test Condictio Min. Typ. Max. Unit C ies C oes C res Input Capacitance Output Capacitance Reverse Trafer Capacitance V CE = 25V, f = 1MHz, V GE = pf pf pf Q g Total Gate Charge V CE = 390V, I C = 20A, nc Q ge Gate-Emitter Charge V GE = 15V, 17.5 nc Q gc Gate-Collector Charge (see Figure 16) 47 nc I CL Turn-Off SOA Minimum Current V clamp = 480V, Tj = 150 C R G = 10Ω, V GE = 15V 200 A 4/14
5 Electrical characteristics Table 5. Switching on/off (inductive load) Symbol Parameter Test Condictio Min. Typ. Max. Unit t d(on) t r Turn-on Delay Time Current Rise Time V CC = 390V, I C = 20A R G = 10Ω, V GE = 15V, (di/dt) on Turn-on Current Slope T J = 25 C (see Figure 16) 1640 A/µs t d(on) t r Turn-on Delay Time Current Rise Time V CC = 390V, I C = 20A R G = 10Ω, V GE = 15V, (di/dt) on Turn-on Current Slope T J = 125 C (see Figure 16) 1600 A/µs t r (V off ) t d ( off ) t f Off Voltage Rise Time Turn-off Delay Time Current Fall Time V cc = 390V, I C = 20A, R GE = 10Ω, V GE =15V,T J =25 C (see Figure 18) t r (V off ) t d ( off ) t f Off Voltage Rise Time Turn-off Delay Time Current Fall Time V cc = 390V, I C = 20A, R GE =10Ω, V GE =15V, T J =125 C (see Figure 18) Table 6. Switching energy (inductive load) Symbol Parameter Test Condictio Min. Typ. Max. Unit E on (1) Turn-on Switching Losses V CC = 390V, I C = 20A 116 µj E (2) off E ts Turn-off Switching Losses Total Switching Losses R G =10Ω, V GE = 15V, Tj= 25 C (see Figure 18) µj µj E on (1) Turn-on Switching Losses V CC = 390V, I C = 20A 239 µj E (2) off E ts Turn-off Switching Losses Total Switching Losses R G =10Ω, V GE = 15V, Tj= 125 C (see Figure 18) µj µj 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 C and 125 C) 2. Turn-off losses include also the tail of the collector current 5/14
6 Electrical characteristics STGW30NC60WD Table 7. Collector-emitter diode Symbol Parameter Test Conditio Min. Typ. Max. Unit V f Forward On-Voltage If = 10A If = 10A, Tj = 125 C V V t rr Q rr I rrm S Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode If = 20A, V R = 50V, di/dt=100a/µs, T j =25 C (see Figure 19) nc A t rr Q rr I rrm S Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode If = 20A, V R = 50V, di/dt=100a/µs, T j =125 C (see Figure 19) nc A 6/14
7 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characterisics Figure 2. Trafer characteristics Figure 3. Traconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variatio 7/14
8 Electrical characteristics STGW30NC60WD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14
9 Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 9/14
10 Test circuit STGW30NC60WD 3 Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14
11 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditio are also marked on the inner box label. ECOPACK is an ST trademark. 11/14
12 Package mechanical data STGW30NC60WD TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A b b b c D E e L L L øp ør S /14
13 Revision history 5 Revision history Table 8. Revision history Date Revision Changes 21-Nov Initial release. 29-Nov Modified Figure 4 and Figure 5 06-Mar New template 13/14
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. 14/14
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General
More informationObsolete Product(s) - Obsolete Product(s)
40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency
More informationObsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D 2 PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type V CES V CE(sat) Typ @25 C Lower on voltage drop (V cesat ) Lower C RES
More informationSTGB14NC60K STGD14NC60K
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D 2 PAK Short circuit rated PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C Low on-voltage drop (Vcesat) Low C res / C ies ratio (
More informationSTGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description
30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with
More informationSales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP 3 SEMIBOX. May 2006 Rev1 1/12
3 Phase inverter IGBT - SEMITOP 3 module PRELIMINARY DATA General features Type V CES @ I C =7A, V CE(sat) (Max) Ts=25 C I C @80 C STG3P3M25N60 600V < 2.5V 25A N-channel very fast PowerMESH IGBT Lower
More informationSTGW39NC60VD. 40 A V - very fast IGBT. Features. Applications. Description
40 A - 600 V - very fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode Applicatio High frequency inverters UPS Motor drivers
More informationSTGW30NC60WD. 30 A, 600 V ultra fast IGBT. Features. Applications. Description
30 A, 600 V ultra fast IGBT Features High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio High frequency motor
More informationSTGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description
STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationSTGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
More informationObsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications
STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationSTGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) 2 Lower C RES / C IES ratio (no cross-conduction susceptibility)
More informationSTGW30N120KD STGWA30N120KD
STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged
More informationSTGBL6NC60D STGPL6NC60D
STGBL6NC60D STGPL6NC60D 600 V - 6 A hyper fast IGBT Datasheet production data Features Low C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TAB
More informationSTGW30NC60VD. 40 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description
STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Applicatio High frequency
More informationSTGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description
5 A - 1200 V - low drop internally clamped IGBT Features Low on-voltage drop (V CE(sat) ) High current capability Off losses include tail current High voltage clamping Applications 1 DPAK 3 IPAK 3 2 1
More informationOrder codes Marking Package Packaging. STGB19NC60HT4 GB19NC60H D²PAK Tape and reel STGP19NC60H GP19NC60H TO-220 Tube STGW19NC60H GW19NC60H TO-247 Tube
STGB19NC60H, STGP19NC60H STGW19NC60H 19 A 600 V very fast IGBT Features Low onvoltage drop (V CE(sat) ) High frequency operation Applicatio High frequency motor drives TO247 1 2 3 TAB 1 2 3 SMPS and PFC
More informationSTGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C I C @100 C STGP10NB60SD 600V < 1.7V 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE
More informationSTGE50NC60VD. 50 A V very fast IGBT. Features. Applications. Description
50 A 600 V very fast IGBT Features High current capability High frequency operation Low C RES /C IES ratio (no crossconduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio
More informationSTGB20NC60V, STGP20NC60V, STGW20NC60V
STGB20NC60V, STGP20NC60V, STGW20NC60V 30 A - 600 V - very fast IGBT Features Datasheet - production data High frequency operation up to 50 khz Lower C RES / C IES ratio (no cross-conduction susceptibility)
More informationSTGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description
31 A, 600 V, very fast IGBT with Ultrafast diode Features Low onvoltage drop (V CE(sat) ) Very soft Ultrafast recovery antiparallel diode Applicatio High frequency motor drives SMPS and PFC in both hard
More informationSTB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM50-1
More informationSTGW35HF60WD. 35 A, 600 V ultra fast IGBT. Features. Applications. Description
35 A, 600 V ultra fast IGBT Features Improved E off at elevated temperature Minimal tail current Low conduction losses V CE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3
More informationSTP36NF06L STB36NF06L
STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A Exceptional
More informationSTN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics
More informationSTP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
More informationSTP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
More informationSTP90NF03L STB90NF03L-1
STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced
More informationIRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitances Description V DSS
More informationSTP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
More informationSTGB14NC60KD STGF14NC60KD, STGP14NC60KD
STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V shortcircuit rugged IGBT Features Short circuit withstand time 10µs. TAB 2 TAB Low onvoltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction
More informationSTB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
More informationSTD2NC45-1 STQ1NC45R-AP
STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NC45-1 450V
More informationObsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
More informationSTGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT
STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT TYPE V CES V CE(sat) I C STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V
More informationSTB30NF10 STP30NF10 - STP30NF10FP
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D 2 PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB30NF10 100V
More informationSTP5NK80Z STP5NK80ZFP
STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET General features Type 100% avalanche tested Gate charge minimized Very low intriic capacitances
More informationSTP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
More information2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram
2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V
More informationSTGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description
60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low otate voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode Application
More informationSTGB19NC60HDT4, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD
STGB19NC60HDT4, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with ultrafast diode Features Datasheet - production data TAB TAB 3 1 D²PAK 1 2 3 TO-220FP Low on-voltage drop (V CE(sat)
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D p W STY30NK90Z 900V
More informationSTP8NK80Z - STP8NK80ZFP STW8NK80Z
STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type V DSS R DS(on) I D STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP
More informationSTD30NF03L STD30NF03L-1
STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold
More informationN-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube
N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET Features Type V DSS R DS(on) Max I D Pw STW9NK95Z 950 V < 1.38 Ω 7 A 160 W Extremely high dv/dt capability 100% avalanche
More informationSTP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description
N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
More informationSTW11NK100Z STW11NK100Z
STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features V Type DSS R (@Tjmax) DS(on) I D Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W Extremely high dv/dt
More informationSTV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
More informationSTP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram.
N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type V DSS R DS(on) I D STP70NS04ZC Clamped < 10mΩ 80A Low capacitance and gate charge 100% avalanche tested 175 C maximum
More informationSTGW38IH130D, STGWT38IH130D
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
More informationObsolete Product(s) - Obsolete Product(s)
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type V DSS R DS(on) R DS(on) *Q g P TOT STK850 30V
More informationSTB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description
N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
More informationSTGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V shortcircuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) Lower C RES / C IES ratio (no crossconduction susceptibility) Very
More informationSTGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationSTP12NK60Z STF12NK60Z
STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) max I D P W STP12NK60Z 650 V
More informationObsolete Product(s) - Obsolete Product(s)
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance
More informationSTC04IE170HV. Emitter switched bipolar transistor ESBT 1700V - 4A W. General features. Internal schematic diagrams. Description.
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features V CS(ON) I C R CS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration Low equivalent
More informationN-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging
N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET Features Type V DSS R DS(on) max STL100NH3LL 30 V
More informationObsolete Product(s) - Obsolete Product(s)
STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NK70Z 700V 7Ω 1.6A 45W STD2NK70Z-1 700V 7Ω 1.6A 45W
More informationSTB80NF55-08T4 STP80NF55-08, STW80NF55-08
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08
More informationSTF40NF03L STP40NF03L
STF40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features Type V DSS R DS(on) max I D STF40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device
More informationSTGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
More informationOrder code Marking Package Packaging. STE07DE220 E07DE220 ISOTOP Tube. May 2008 Rev 1 1/7
Hybrid emitter switched bipolar traistor ESBT 2200-7A - 0.07 W power module Preliminary Data Features Table 1. CS(ON) I C R CS(ON) 0.5 7A 0.07 Ω High voltage / high current cascode configuration Ultra
More informationSTGB7NC60HD, STGF7NC60HD, STGP7NC60HD
STGB7NC60HD, STGF7NC60HD, STGP7NC60HD N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Datasheet production data Features Low on-voltage drop (V CE(sat) ) Off losses include tail current Losses
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube
TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off
More informationPart Number Marking Package Packaging. STC12IE90HV C12IE90HV TO247-4L HV Tube. January 2007 Rev 1 1/11
Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features V CS(ON) I C R CS(ON) 1V 12A 0.083 W High voltage / high current Cascode configuration Low equivalent on
More information2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package
More informationObsolete Product(s) - Obsolete Product(s)
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology Peak collector current I
More informationSTGW15H120DF2, STGWA15H120DF2
STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationPart Number Marking Package Packing. STC03DE220HV C03DE220HV TO247-4L HV Tube. November 2006 Rev 1 1/8
Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33 W Preliminary Data General features Table 1. General features V CS(ON) I C R CS(ON) 1V 3A 0.33Ω Low equivalent on resistance Very fast-switch,
More informationObsolete Product(s) - Obsolete Product(s)
Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration
More information2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
More informationBUV298V. NPN transistor power module. General features. Applications. Internal schematic diagram. Order codes
NPN transistor power module General features NPN Transistor High current power bipolar module Very low R th junction case Specific accidental overload areas Fully insulated package (U.L. compliant) for
More informationObsolete Product(s) - Obsolete Product(s)
PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145
More informationSTGW60V60DF STGWT60V60DF
1 2 3 TO-247 TO-3P 2 1 Figure 1. Internal schematic diagram 3 STGW6V6DF STGWT6V6DF 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series
More informationBUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
More informationSTGW60H65DFB, STGWA60H65DFB STGWT60H65DFB
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching
More informationSTD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
More informationSTC03DE170HP. Hybrid emitter switched bipolar transistor ESBT 1700V - 3A W. Features. Applications. Description.
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 W Features V CS(ON) I C R CS(ON) 1 V 3 A 0.33 Ω Low equivalent on resistance Very fast-switch, up to 150 khz Squared RBSOA, up to 1700V
More information2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
More informationSTB11NK50Z - STP11NK50ZFP STP11NK50Z
Features STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω, 10 A TO-220, TO-220FP, D 2 PAK Zener-protected SuperMESH TM Power MOSFET Type V DSS R DS(on) max I D Pw STB11NK50Z 500 V < 0.52 Ω
More informationObsolete Product(s) - Obsolete Product(s)
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
More information2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
More informationSTB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N
STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I 2 /D 2 PAK - TO-247 Second generation MDmesh Power MOSFET General features Type 100% avalanche tested Low
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
More information10 A, 600 V short-circuit rugged IGBT
10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel
More informationSTB High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power
More informationOrder codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
More informationBD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
More informationObsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
More informationObsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
More informationSTGW60H65FB STGWT60H65FB
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationObsolete Product(s) - Obsolete Product(s)
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh II Power MOSFET TO-220 - DPAK - D 2 PAK - I 2 PAK - TO-220FP Features Type 100% avalanche tested Low input capacitance
More information2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
More information