STTH6112TV. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Order codes. Description STTH6112TV2 STTH6112TV1
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1 Ultrafast recovery - 12 V diode Main product characteristics I F(AV) 2 x 3 A K2 A2 A2 K1 V RRM 12 V T j 15 C V F (typ) t rr (typ) 1.3 V 45 ns K1 A1 STTH6112TV1 K2 A1 STTH6112TV2 Features and benefits A1 K1 A1 K2 Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 25 V RMS Capacitance < 45 pf Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. A2 K2 Order codes Part Number STTH6112TV1 STTH6112TV2 K1 A2 ISOTOP Marking STTH6112TV1 STTH6112TV2 March 26 Rev 1 1/8 8
2 Characteristics STTH6112TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F(RMS) RMS forward current 1 A I F(AV) Average forward current, δ =.5 T c = 7 C per diode 3 A I FRM Repetitive peak forward current t p = 5 µs, F = 5 khz square 3 A I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 25 A T stg Storage temperature range -65 to + 15 C T j Maximum operating junction temperature 15 C Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case Per diode 1.16 Total.63 R th(c) Coupling thermal resistance.1 C/W Table 3. When the diodes are used simultaneously: T j(diode1) = P (diode1) x R th(j-c) (per diode) + P (diode2) x R th(c) Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 2 V R = V RRM T j = 125 C µa T j = 25 C 2.1 T j = 125 C I F = 25 A V F (2) Forward voltage drop T j = 15 C T j = 25 C 2.25 V T j = 125 C I F = 3 A T j = 15 C Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.6 x I F(AV) +.12 I F 2 (RMS) 2/8
3 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 C 115 t rr Reverse recovery time I F = 1 A, di F /dt = -1 A/µs, V R = 3 V, T j = 25 C 57 8 ns I F = 1 A, di F /dt = -2 A/µs, V R = 3 V, T j = 25 C I RM Reverse recovery current I F = 3 A, di F /dt = -2 A/µs, V R = 6 V, T j = 125 C A S Softness factor I F = 3 A, di F /dt = -2 A/µs, V R = 6 V, T j = 125 C 1.5 t fr Forward recovery time I F = 3 A di F /dt = 1 A/µs V FR = 1.5 x V Fmax, T j = 25 C 55 ns V FP Forward recovery voltage I F = 3 A, di F /dt = 1 A/µs, T j = 25 C 6 V Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current P(W) 8 7 δ=.5 δ=.1 δ=.2 δ=.5 δ= T 1 I F(AV) (A) δ=tp/t tp I FM(A) Tj=15 C (Maximum values) T j =15 C (Typical values) Tj= 25 C (Maximum values) 2 V FM(V) /8
4 Characteristics STTH6112TV Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus di F /dt (typical values) Z th(j-c) /Rth(j-c) Single pulse t p(s). 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 I RM(A) V R =6V I F =.5 x I F(AV) I F = 2 x I F(AV) Figure t (ns) rr Reverse recovery time versus di F /dt (typical values) I F = 2 x I F(AV) V R =6V Figure Q (µc) rr V R =6V Reverse recovery charges versus di F /dt (typical values) I F = 2 x I F(AV) I F =.5 x I F(AV) I F =I F(AV) I F =.5 x I F(AV) Figure 7. Softness factor versus di F /dt (typical values) Figure 8. Relative variations of dynamic parameters versus junction temperature S factor I F = 2 x I F(AV) V R =6V S factor V R =6V Reference: I RM.5 t RR 1. Q.25 RR T j( C) /8
5 Characteristics Figure 9. Transient peak forward voltage versus di F /dt (typical values) Figure 1. Forward recovery time versus di F /dt (typical values) V FP(V) t (ns) fr V FR = 1.5 x V F max Table 5. C(pF) 1 Junction capacitance versus reverse voltage applied (typical values) F=1MHz V osc =3mV RMS T j =25 C 1 V R(V) /8
6 Package information STTH6112TV 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Table 6. ISOTOP dimensions DIMENSIONS REF. Millimeters Inches E G2 C Min. Max Min. Max. A A A1 E2 C2 A B C F1 F C D D P1 E E D S G D1 E typ..976 typ. B G G G ØP F G1 F E1 P P S In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 6/8
7 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH6112TV1 STTH6112TV1 ISOTOP 27 g 1 Tube STTH6112TV2 STTH6112TV2 ISOTOP 27 g 1 Tube 4 Revision history Date Revision Description of Changes 2-Mar-26 1 First issue. 7/8
8 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 26 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8
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