BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor

Transcription

1 DISCRETE SEMICONDUCTORS N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995

2 FEATURES Direct interface to C-MOS, TTL, etc., due to low threshold voltage High speed switching No secondary breakdown DESCRIPTION Silicon n-channel enhancement mode vertical in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT V DS drain-source voltage 270 V I D drain current (DC) 250 ma R DS(on) drain-source on-resistance 8 Ω V GS(th) threshold voltage 2 V PINNING (BSN274) PIN DESCRIPTION 1 gate 2 drain 3 source PINNING (BSN274A) PIN DESCRIPTION 1 source 2 gate 3 drain Note: Other pinnings are available on request. PIN CONFIGURATION - TO-92 VARIANT handbook, halfpage g d MAM146 s Fig.1 Simplified outline and symbol. April

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage 270 V ±V GSO gate-source voltage open drain 20 V I D drain current DC 250 ma I DM drain current peak 1 A P tot total power dissipation up to T amb =25 C (note 1) 1 W T stg storage temperature range C T j operating junction temperature 150 C THERMAL RESISTANCE SYMBOL PARAMETER VALUE UNIT R th j-a from junction to ambient (note 1) 125 K/W Notes 1. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum 10 mm 10 mm. CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage 270 V I D =10µA I DSS drain-source leakage current V DS = 220 V 1 µa ±I GSS gate-source leakage current ±V GS =20V 100 na V DS =0 V GS(th) gate threshold voltage I D =1mA V V DS =V GS R DS(on) drain-source on-resistance I D = 250 ma Ω V GS =10V R DS(on) drain-source on-resistance I D =20mA 9 14 Ω V GS = 2.4 V Y fs transfer admittance I D = 250 ma ms V DS =25V C iss input capacitance V DS =25V f=1mhz pf C oss output capacitance V DS =25V f=1mhz pf April

4 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C rss feedback capacitance V DS =25V f=1mhz Switching times (see Figs 2 and 3) t on switching-on time I D = 250 ma V DD =50V V GS = 0 to 10 V t off switching-off time I D = 250 ma V DD =50V V GS = 0 to 10 V 5 15 pf 5 10 ns ns handbook, halfpage V DD = 50 V handbook, halfpage INPUT 90 % 10 % 10 V 0 V 50 Ω I D OUTPUT 90 % 10 % MSA631 t on t off MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. April

5 PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L 2 E d A L b 1 D 2 e 1 e 3 b 1 L mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b 1 c D d E e e 1 L L 1 (1) max L 2 max mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT54 variant TO-92 SC April

6 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April

7 NOTES April