-180mA SOT963 ESD PROTECTED S 1. Top View
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1 W P V V W P FM FM M299JQ MPLMY P HM M MF Product ummary evice BV ) Max Q 2V Q2-2V Max = V = 4.5V 45m V = 2.5V V =.8V 33m V =.5V V = -4.5V -3m V = -2.5V -28m V = -.8V -24m V = -.5V escription and pplications -8m his MF is designed to meet the stringent requirements of utomotive applications. t is qualified to -Q supported by a PPP and is ideal for use in: General Purpose nterfacing witch Power Management Functions nalog witch Features and Benefits Low n-esistance Very Low Gate hreshold Voltage.V Max Low nput apacitance Fast witching peed ltra-mall urface Mount Package mm x mm Low Package Profile.45mm Maximum Package Height Protected Gate otally Lead-Free & Fully oh ompliant ote & 2) Halogen and ntimony Free. Green evice ote 3) Qualified to -Q tandards for High eliability PPP apable ote 4) Mechanical ata ase: 963 ase Material: Molded Plastic "Green" Molding ompound. L Flammability lassification ating 94V- Moisture ensitivity: Level per J--2 erminal onnections ndicator: ee iagram erminals: Finish Matte in nnealed over opper Leadframe. olderable per ML--22 Method 28 e3 Weight:.27 grams pproximate) 963 G 2 2 P G 2 op View op View chematic and ransistor iagram rdering nformation ote 5) otes: Part umber ase Packaging M299JQ K/ape & eel M299JQ-7B 963 K/ape & eel. o purposely added lead. Fully irective 22/95/ oh) & 2/65/ oh 2) compliant. 2. ee for more information about iodes ncorporated s definitions of Halogen- and ntimony-free "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine <9ppm chlorine <5ppm total Br + l) and <ppm antimony compounds. 4. utomotive products are -Q qualified and are PPP capable. efer to 5. For packaging details go to our website at Marking nformation = Product ype Marking ode M299JQ ocument number: 3968 ev. - 2 of 9 eptember 26 iodes ncorporated
2 W P V V W P FM FM M299JQ Maximum atings Q = +25 unless otherwise specified.) haracteristic ymbol Value nit rain-ource Voltage V 2 V Gate-ource Voltage V ±8 V ontinuous rain urrent ote 6) V = 4.5V teady = tate m = t<5s = m = +7 4 ontinuous rain urrent ote 6) V =.8V teady = tate m = t<5s = m = +7 3 Maximum ontinuous Body iode Forward urrent ote 6) 44 m Pulsed rain urrent ote 7) M 8 m Maximum atings Q2 = +25 unless otherwise specified.) haracteristic ymbol Value nit rain-ource Voltage V -2 V Gate-ource Voltage V ±8 V ontinuous rain urrent ote 6) V = -4.5V teady = tate m = t<5s = m = ontinuous rain urrent ote 6) V = -.8V teady = tate m = +7-9 t<5s = m = Maximum ontinuous Body iode Forward urrent ote 6) -44 m Pulsed rain urrent ote 7) M -8 m hermal = +25 unless otherwise specified.) haracteristic ymbol Value nit otal Power issipation ote 6) P 35 mw teady tate 36 /W hermal esistance Junction to mbient ote 6) t<5s θj 27 /W perating and torage emperature ange J G -55 to +5 otes: 6. evice mounted on F-4 PB with minimum recommended pad layout. 7. evice mounted on minimum recommended pad layout test board μs pulse duty cycle = %. M299JQ ocument number: 3968 ev of 9 eptember 26 iodes ncorporated
3 W P V V W P FM FM M299JQ lectrical haracteristics Q = +25 unless otherwise specified.) haracteristic ymbol Min yp Max nit est ondition FF H ote 8) rain-ource Breakdown Voltage BV V V = V = 25μ Zero Gate Voltage rain = V = 6V V = V n V = 5V V = V Gate-ource Leakage - - ± n V = ±5V V = V H ote 8) Gate hreshold Voltage V H).4 -. V V = V = 25μ V = 4.5V = m -.75 V = 2.5V = 5m tatic rain-ource n-esistance ) Ω V =.8V = 2m V =.5V = m V = V = m Forward ransfer dmittance Y fs ms V = 5V = 25m iode Forward Voltage V -.6. V V = V = m YM H ote 9) nput apacitance iss pf V = 5V V = V utput apacitance oss pf f =.MHz everse ransfer apacitance rss pf Gate esistance g Ω V = V V = V f =.MHz otal Gate harge Q g n V = 4.5V V = V Gate-ource harge Q gs n = 25m Gate-rain harge Q gd n urn-n elay ime t ) ns V = 5V V = 4.5V urn-n ise ime t ns L = 47Ω g = 2Ω urn-ff elay ime t FF) ns = 2m urn-ff Fall ime t F ns lectrical haracteristics Q2 = +25 unless otherwise specified.) haracteristic ymbol Min yp Max nit est ondition FF H ote 8) rain-ource Breakdown Voltage BV V V = V = -25μ Zero Gate Voltage rain = V = -6V V = V n V = -5V V = V Gate-ource Leakage - - ± n V = ±5V V = V H ote 8) Gate hreshold Voltage V H) V V = V = -25μ -.9 V = -4.5V = -m V = -2.5V = -5m tatic rain-ource n-esistance ) Ω V = -.8V = -2m V = -.5V = -m V = -V = -m Forward ransfer dmittance Y fs 45 - ms V = -5V = -25m iode Forward Voltage V V V = V = -m YM H ote 9) nput apacitance iss pf V = -5V V = V utput apacitance oss pf f =.MHz everse ransfer apacitance rss pf Gate esistance g Ω V = V V = V f =.MHz otal Gate harge Q g n V = -4.5V V =- V Gate-ource harge Q gs n = -25m Gate-rain harge Q gd n urn-n elay ime t ) ns urn-n ise ime t ns urn-ff elay ime t FF) ns urn-ff Fall ime t F ns otes: 8. hort duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. ot subject to product testing. V = -5V V = -4.5V g = 2Ω = -2m M299JQ ocument number: 3968 ev of 9 eptember 26 iodes ncorporated
4 MLZ) ) - - ) ) - - ) W P V V W P FM FM ) ) M299JQ ypical haracteristics - -HL.8 V = 4.5V V =4.V.8 = V = 3.V V = 2.5V V = 2.V V =.5V ) = 25 = 85 = 25 = 5 V = V V - VLG ) Fig. ypical utput haracteristics V =.8V V = 2.5V V = 4.5V ) Fig. 3 ypical n-esistance vs. rain urrent and Gate Voltage ) - - ) - - ) ) V G- VLG V) Fig. 2 ypical ransfer haracteristics V = 4.5V = 5 = 25 = 85 = 25 = -55 V = 5.V ) Fig. 4 ypical n-esistance vs. rain urrent and emperature ) ) d ) e z a l i m o r J J MP ) Fig. 5 n-esistance Variation with emperature M299JQ ocument number: 3968 ev. - 2 = 3m = 5m 4 of = 5m = 3m J J MP ) Fig. 6 n-esistance Variation with emperature eptember 26 iodes ncorporated
5 V G- VLG V) ) J P pf) W P V V W P FM FM V H) G HHL VLG V) ) M299JQ ypical haracteristics - -HL ont.) = m.6 = 25 癈.6 = 25 礎 J J MP ) Fig. 7 Gate hreshold Variation vs. mbient emperature V - VLG V) Fig. 8 iodes Forward Voltage vs. urrent f = MHz oss iss ) n G K L LKG n) = 5 = 25 = 85 = 25 rss V - VLG V) Fig. 9 ypical Junction apacitance V - VLG V) Fig. ypical rain-ource Leakage urrent vs. Voltage 8 ) Limited ).. P W = s P W = s P = ms W P = ms W P = ms W P = µs W P = µs W V = V JMX) = 5 = 25 ingle Pulse Q GQ g - n) n) Fig. Gate harge haracteristics M299JQ ocument number: 3968 ev of 9.. V - VLG V) Fig. 2 afe peration rea eptember 26 iodes ncorporated
6 MLZ) ) - - ) ) - - ) W P V V W P FM FM - ) - ) ypical haracteristics - P-HL.8.8 M299JQ V = -5.V = 85 = ) = -55 = 25 = V - VLG V) Fig. 3 ypical utput haracteristics V = -.8V V = -4.5V ) Fig. 5 ypical n-esistance vs. rain urrent and Gate Voltage ) - - ) - - ) ) V G- VLG V) Fig. 4 ypical ransfer haracteristics V = -4.5V = 25 = 5 = 25 = 85 = ) Fig. 6 ypical n-esistance vs. rain urrent and emperature ) ) d ) l i a z e m r o J MP ) J Fig. 7 n-esistance Variation with emperature M299JQ ocument number: 3968 ev. - 2 V = -2.5V = -5m V = -4.5V = -3m 6 of V = -2.5V = -5m V = -4.5V = -3m J J MP ) Fig. 8 n-esistance Variation with emperature eptember 26 iodes ncorporated
7 -V G VLG V) - ) J P pf) W P V V W P FM FM -V H) G HHL VLG V) - ) M299JQ ypical haracteristics - P-HL ont.) = -m.4 = 25 癈.4.2 = -25 礎 J J MP ) Fig. 9 Gate hreshold Variation vs. mbient emperature V - VLG V) Fig. 2 iodes Forward Voltage vs. urrent 5 f = MHz = iss oss ) n G K L - LKG n) - = 25 = 85 = -25 rss V - VLG V) Fig. 2 ypical Junction apacitance V - VLG V) Fig. 22 ypical Leakage urrent vs. rain-ource Voltage Q Gg L G HG n) Fig. 23 Gate harge haracteristics M299JQ ocument number: 3968 ev. - 2 V = V = -4.5 ).. 7 of 9 ) Limited P W = JMX) = 5 = 25 ingle Pulse P = s W P =ms W P =µs W P W =s P W =ms P W = ms P =µs W.. - V - VLG V) Fig. 24 afe peration rea eptember 26 iodes ncorporated
8 W P V V W P FM FM t) rt) HML M299JQ =.7 =.5 =.3. =. =.9 =.5 =.2. =. =.5 J t) = rt)* J J = 356/W /W = ingle Pulse uty ycle = t/t t PL M sec) Fig. 25 ransient hermal esistance Package utline imensions Please see for the latest version. 963 e L e b c 963 im Min Max yp b..2.5 c e e L.5.5. ll imensions in mm eating plane M299JQ ocument number: 3968 ev of 9 eptember 26 iodes ncorporated
9 W P V V W P FM FM M299JQ uggested Pad Layout Please see for the latest version. 963 Y imensions Value in mm).35 X.2 Y.2 Y. Y X MP P MK WY F Y K XP MPL WH H M LG B LM H MPL W F MHBLY F F PL PP H QVL H LW F Y J). iodes ncorporated and its subsidiaries reserve the right to make modifications enhancements improvements corrections or other changes without further notice to this document and any product described herein. iodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes ncorporated convey any license under its patent or trademark rights nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes ncorporated and all the companies whose products are represented on iodes ncorporated website harmless against all damages. iodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould ustomers purchase or use iodes ncorporated products for any unintended or unauthorized application ustomers shall indemnify and hold iodes ncorporated and its representatives harmless against all claims damages expenses and attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more nited tates international or foreign patents pending. Product names and markings noted herein may also be covered by one or more nited tates international or foreign trademarks. his document is written in nglish but may be translated into multiple languages for reference. nly the nglish version of this document is the final and determinative format released by iodes ncorporated. LF PP iodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive fficer of iodes ncorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems and acknowledge and agree that they are solely responsible for all legal regulatory and safety-related requirements concerning their products and any use of iodes ncorporated products in such safety-critical life support devices or systems notwithstanding any devices- or systems-related information or support that may be provided by iodes ncorporated. Further ustomers must fully indemnify iodes ncorporated and its representatives against any damages arising out of the use of iodes ncorporated products in such safety-critical life support devices or systems. opyright 26 iodes ncorporated M299JQ ocument number: 3968 ev of 9 eptember 26 iodes ncorporated
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Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
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NEW PODUCT Green 5 ULT-FST ECOVEY ECTIFIE PowerDI Product Summary (@T = +25 C) V M (V) I O () V F Max (V) I Max (μ) 4 5 1.185 1 Description Features and Benefits Glass Passivated Die Construction Ultra-Fast
More informationFeatures. Bottom View. Top View Bottom View
YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
More informationGreen. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel
YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDF-13 AEC-Q101 D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationFeatures. Top View. Part Number Case Packaging DMN3008SCP10-7 X4-DSN /Tape & Reel
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
More informationI D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel
DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description
More informationG2 D1 DMC1028UFDB. Features. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information
YM Product Summary Device BV DSS R DS(ON) max Q N-Channel Q2 P-Channel Description 2V -2V I D max T A = +25 C 25mΩ @ V = 4.5V.A 3mΩ @ V = 3.3V 5.5A 32mΩ @ V = 2.5V 5.3A 8mΩ @ V = -4.5V -3.4A 9mΩ @ V =
More informationFeatures. Bottom View Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMN80H2D0SCTI ITO220AB (Type TH) 50 pieces/tube
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS R DS(ON) Package 8V Description.Ω@V GS = V ITOAB (Type TH) I D T C = +5 C This new generation MOSFET features low on-resistance and fast switching,
More informationTop View. Part Number Compliance Case Packaging DMN6066SSD-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSDQ-13 Automotive SO-8 2,500/Tape & Reel
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationGreen. Bottom View. Top View. Part Number Qualification Case Packaging SMCJXX(C)AQ-13-F* Automotive SMC 3000/Tape & Reel
Green J14()AQ J36()AQ 1,500W SURFAE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR Product Summary (@T A = +25 ) P PK I FSM (A) V RWM (V) PM (AV) 1500W 200 14-36 5W Features and Benefits 1500W Peak Pulse
More informationGreen. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
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Product Summary B140Q/BQ V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 40 1.0 0.5 0.5 B150Q, B160Q V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 50/60 1.0 0.7 0.5 Description
More informationK3N MMBT3906. Features. Mechanical Data. Ordering Information (Notes 4 & 5) Marking Information 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 MMBT3906
YM 40V PNP SMLL SIGNL TRNSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Ideal for Medium Power mplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free
More informationTop View BAT54T BAT54AT BAT54CT BAT54ST
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
More informationB3XXAE B320AE-B345AE. Product Summary. Features and Benefits. Mechanical Data. Description and Applications NEW PRODUCT. Ordering Information (Note 4)
Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
More informationGreen. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
More informationTop View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
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1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
More informationSOD123. Top View. M5X = Product Type Marking Code YM = Date Code Marking Y = Year (ex.: E = 2017) M = Month (ex: 9 = September)
0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V F(MAX) (V) I R(MAX) (µa) V RRM (V) I O (A) @ +25 C @ +25 C 80 0.5 0.80 5 Description and Applications This is a single rectifier packaged
More informationGreen. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationGreen. Features. TO220AB Bottom View. Part Number Case Packaging SDT20B100CT TO220AB 50 Pieces/Tube
Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationDCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationPackage Pin Out Configuration. Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP ,000
YM DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Ultra-Small Surface Mount Package Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free
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Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
More informationGreen. SOD123F (Standard) Top View. Part Number Qualification Case Packaging US1GWF-7 AEC-Q101 SOD123F (Standard) 3,000/Tape & Reel
Green.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 400.25 Description The is a rectifier packaged in the SOD23F (Standard) package and
More informationZXMS6004N8. Product Summary. Features and Benefits ADVANCE INFORMATION. Description. Mechanical Data. Applications. Ordering Information (Note 4)
AVANCE INFORMATION Clamping Product Summary 60V N-CHANNEL SELF PROTECTE ENHANCEMENT MOE INTELLIFET MOSFET Features and Benefits Continuous rain Source Voltage 60V On-State Resistance 500mΩ Nominal Load
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging HDS20M-13 Commercial HDS 5,000/Tape & Reel
Green 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 2 0.95 5 Features and Benefits Glass Passivated Die Construction Miniature
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationGreen. Part Number Compliance Case Packaging DBF Commercial DBF 3,000/Tape & Reel
Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MB10S-13 Commercial MBS 3,000/Tape & Reel
Green 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 000 0.8. 5 Description and Applications Features and Benefits Glass Passivated
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationNVTFS5820NL. Power MOSFET 60 V, 11.5 m, Single N Channel, 8FL
Power MOFET 6 V,.5 m, ingle N Channel, 8FL Features mall Footprint (3.3x3.3 mm) for Compact esign Low R (on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTF582NLWF Wettable
More informationN-Channel 30-V (D-S) MOSFET with Schottky Diode
N-Channel 3-V (-) MOFE with chottky iode i322y PROUC UMMARY V (V) R (on) (Ω) I (A) a Q g (yp.) 3.85 at V G = V 8.25 at V G =.5 V 5.7 nc CHOKY AN BOY IOE PROUC UMMARY V (V) V (V) iode Forward Voltage I
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
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Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More information74HCT164. Pin Assignments. Description NEW PRODUCT. Applications. Features. ( Top View ) Vcc Q7 Q6 DSA DSB Q0 Q5 Q4 MR Q1 Q2 Q3 GND
8-BIT PAALLEL-OUT SEIAL SHIFT EGISTES Description Pin Assignments The is a serial input 8-bit edge-triggered shift register that has outputs from each of eight stages. SEIAL DATA INPUT PINS ( Top View
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
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