Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs
|
|
- Annabelle Phelps
- 5 years ago
- Views:
Transcription
1 TCUT13X1 Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs DESCRIPTION The TCUT13X1 is a compact transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface mount package. E E Coll. Pin connection top view Cath. NC A FEATURES Package type: surface mount Detector type: phototransistor Dimensions (L x W x H in mm): 5.5 x 4 x 4 AEC-Q11 qualified Gap (in mm): 3 Aperture (in mm):.3 Channel distance (center to center):.8 mm Typical output current under test: I C =.6 ma Emitter wavelength: 95 nm Lead (Pb)-free soldering released Moisture sensitivity level (MSL): 1 Compliant to RoHS Directive 22/95/EC and in accordance to WEEE 22/96/EC Note ** Please see document Vishay Material Category Policy : APPLICATIONS Automotive optical sensors Accurate position sensor for encoder Sensor for motion, speed and direction PRODUCT SUMMARY PART NUMBER GAP WIDTH (mm) Note Conditions like in table basic characteristics/coupler APERTURE WIDTH (mm) TYPICAL OUTPUT CURRENT UNDER TEST (1) (ma) DAYLIGHT BLOCKING FILTER INTEGRATED TCUT13X No ORDERING INFORMATION ORDERING CODE PACKAGING VOLUME (1) REMARKS TCUT13X1 Tape and reel MOQ: 2 pcs, 2 pcs/reel Drypack, MSL 1 Note MOQ: minimum order quantity Rev. 2.9, 4-Oct-11 1 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 TCUT13X1 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T amb 95 C P tot 37.5 mw Junction temperature T j 11 C Ambient temperature range T amb - 4 to + 15 C Storage temperature range T stg - 4 to C Soldering temperature In accordance with fig. 16 T sd 26 C INPUT (EMITTER) Reverse voltage V R 5 V Forward current T amb 95 C 25 ma Forward surge current t p 1 μs SM 2 ma Power dissipation T amb 95 C P V 37.5 mw OUTPUT (DETECTOR) Collector emitter voltage V CEO 2 V Emitter collector voltage V ECO 7 V Collector current I C 2 ma Collector dark current T amb = 85 C, V CE = 5 V I CEO 3.3 μa ABSOLUTE MAXIMUM RATINGS 4 3 P V - Power Dissipation (mw) R thja = 46 K/W - Forward Current (ma) R thja = 46 K/W T amb - Ambient Temperature ( C) T amb - Ambient Temperature ( C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Rev. 2.9, 4-Oct-11 2 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 TCUT13X1 ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector current per channel V CE = 5 V, = 15 ma I C 3 6 μa Collector emitter saturation voltage = 15 ma, I C =.5 ma V CEsat.4 V INPUT (EMITTER) Forward voltage = 15 ma V F V Reverse current V R = 5 V I R 1 μa Junction capacitance V R = V, f = 1 MHz C j 25 pf OUTPUT (DETECTOR) Collector emitter voltage I C I C = 1 ma V CEO 2 V Emitter collector voltage I E = 1 μa V ECO 7 V Collector dark current V CE = 25 V, = A, E = lx I CEO 1 1 na SWITCHING CHARACTERISTICS Rise time Fall time I C =.3 ma, V CE = 5 V, R L = 1 Ω (see fig. 3) I C =.3 ma, V CE = 5 V, R L = 1 Ω (see fig. 3) t r 2 15 μs t f 3 15 μs 2688 R G = 5 Ω t p T = 2 t p = 1 ms 5 Ω 1 Ω + 5 V I C adjusted by Channel I Channel II Oscilloscope R L 1 MΩ C L 2 pf Fig. 3 - Test Circuit for t r and t f Fig. 4 - Switching Times I C 1 % 9 % 1 % t p t d t r t on (= t d + t r ) t r t d t on t p Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t t Storage time Fall time Turn-off time BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) = 15 ma - Forward Current (ma) V F - Forward Voltage (V) V F - Forward Voltage (V) T amb - Ambient Temperature ( C) Fig. 5 - Forward Current vs. Forward Voltage Fig. 6 - Forward Voltage vs. Ambient Temperature Rev. 2.9, 4-Oct-11 3 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 TCUT13X1 I C - Collector Current (ma) V CE = 5 V I C - Collector Current (ma) V CE = 5 V = 15 ma = 5 ma Forward Current (ma) Fig. 7 - Collector Current vs. Forward Current T amb - Ambient Temperature ( C) Fig. 1 - Collector Current vs. Ambient Temperature 1 1 I C - Collector Current (ma) 1.1 = 5 ma = 3 ma = 25 ma = 15 ma I CE - Collector Dark Current (na) = V CE = 7 V V CE = 25 V V CE = 5 V V CE - Collector Emitter Voltage (V) T amb - Ambient Temperature ( C) Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig Collector Dark Current vs. Ambient Temperature V CEsat - Coll. Emitter Saturation Voltage (V) I C = 5 µa = 5 ma = 15 ma T amb - Ambient Tempearture ( C) Fig. 9 - Collector Emitter Saturation Voltage vs. Ambient Temperature I C rel - Relative Collector Current 1 S S - Horizontal Displacement (mm) Fig Relative Collector Current vs. Horizontal Displacement Rev. 2.9, 4-Oct-11 4 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 TCUT13X1 1 = 15 ma + V C = 5 V I Crel - Rel. Collector Current.5 1 ±.2 Optical axis S 74HCT14 1 kω V E U Q S - Vertical Displacement (mm) Fig Relative Collector Current vs. Vertical Displacement GND Fig Application example REFLOW SOLDER PROFILE t r /t f - Rise/Fall Time (µs) R L = 1 Ω t f 3 t r I C - Collector Current (µa) Fig Rise/Fall Time vs. Collector Current Temperature ( C) C C 217 C 2 15 max. 12 s 1 5 max. ramp up 3 C/s max. 26 C 245 C max. 3 s max. 1 s max. ramp down 6 C/s Time (s) Fig Lead (Pb)-free Reflow Solder Profile acc. J-STD-2 FLOOR LIFE RELIABILITY TESTS IN REFERENCE TO AEC-Q11 RELEASE Level 1, acc. JEDEC, J-STD-2. No time limit. TEST CONDITION DURATION LOT SIZE - REJECTS High temperature storage T stg (max.) = 1 C 1 h 3 x 5 pcs - pcs Low temperature storage T stg (min.) = - 4 C 1 h 3 x 5 pcs - pcs Temperature cycling - 4 C/+ 1 C 1 x 3 x 77 pcs - pcs H3TRB Intermittent operational life 85 C/85 % RH, emitters: V R = 4 V, detectors: V CEO = 5 V Emitters: = 8 ma DC, detectors: V CE = 16 V, duty cycle: 2 min on, 2 min off, T amb = 25 C 1 h 3 x 77 pcs - pcs 1 h (15 cycles) 3 x 77 pcs - pcs RELIABILITY TESTS IN REFERENCE TO ENHANCED TEMPERATURE RELEASE ACC. AEC-Q11 TEST CONDITION DURATION LOT SIZE - REJECTS High temperature storage T stg(max.) = 125 C 1 h 1 x 5 pcs - pcs Temperature cycling - 4 C/+ 15 C 1 x 1 x 77 pcs - pcs Power temperature cycle - 25 C/+ 85 C, = 5 ma, V CE = 16 V, 2 min. on, 2 min. off 1 h (15 cycles) 1 x 77 pcs - pcs Rev. 2.9, 4-Oct-11 5 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 TCUT13X1 PACKAGE DIMENSIONS in millimeters Rev. 2.9, 4-Oct-11 6 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 TCUT13X1 PACKAGE DIMENSIONS in millimeters Volume/reel = 2 pcs 2611 Rev. 2.9, 4-Oct-11 7 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 Packaging and Ordering Information Packaging and Ordering Information PART NUMBER MOQ (1) PCS PER TUBE Notes (1) MOQ: minimum order quantity (2) Please refer to datasheets TUBE SPECIFICATION FIGURES TUBE SPEC. (FIGURE) CONSTITUENTS (FORMS) CNY TCPT13X1 2 Reel (2) 29 TCRT1 1 Bulk - 26 TCRT11 1 Bulk - 26 TCRT TCRT5L TCST TCST13L TCST TCST TCST TCST TCST TCST TCST TCST TCUT13X1 2 Reel (2) 29 TCZT82-PAER 25 Bulk Fig. 1 Document Number: 8112 For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.1, 2-Jul-9 1
9 Packaging and Ordering Information Packaging and Ordering Information 1521 Fig Fig. 3 For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev. 1.1, 2-Jul-9
10 Packaging and Ordering Information Packaging and Ordering Information Fig. 4 Fig Document Number: 8112 For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.1, 2-Jul-9 3
11 Packaging and Ordering Information Packaging and Ordering Information Fig Fig. 7 For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev. 1.1, 2-Jul-9
12 Packaging and Ordering Information Packaging and Ordering Information 2257 Fig. 8 Document Number: 8112 For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.1, 2-Jul-9 5
13 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 211/65/EU of The European Parliament and of the Council of June 8, 211 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 211/65/EU. Revision: 12-Mar-12 1 Document Number: 91
14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: TCUT13X1
Subminiature Transmissive Optical Sensor with Transistor Output
TCPT135X1 Subminiature Transmissive Optical Sensor with Transistor Output 1961 DESCRIPTION The TCPT135X1 is a compact transmissive sensor that includes an infrared emitter and a phototransistor detector,
More informationSubminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs
TCUT135X1 Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs 19534 DESCRIPTION The TCUT135X1 is a compact transmissive sensor that includes an infrared emitter and two phototransistor
More informationTransmissive Optical Sensor with Phototransistor Output
TCST23, TCST222, TCST23 Transmissive Optical Sensor with Phototransistor Output 98_4 DESCRIPTION 98_3 Top view The TCST23, TCST222, and TCST23 are transmissive sensors that include an infrared emitter
More informationTransmissive Optical Sensor with Phototransistor Output
TCST3, TCST22, TCST3 Transmissive Optical Sensor with Phototransistor Output DESCRIPTION 98_3 98_5 Top view + E.3" 7.6 mm The TCST3, TCST22, and TCST3 are transmissive sensors that include an infrared
More informationTransmissive Optical Sensor with Phototransistor Output
TCST23 Transmissive Optical Sensor with Phototransistor Output 2833 DESCRIPTION Top view The TCST23 is a transmissive sensor that includes an infrared emitter and phototransistor, located face-to-face
More informationMatched Pairs of Emitters and Detectors
Matched Pairs of Emitters and Detectors TCZT82 96 237_ DESCRIPTION The TCZT82 include matched infrared emitters and phototransistors in leaded packages, used to assemble custom-designed transmissive sensors
More informationReflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output CNY7 2835 DESCRIPTION The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.
More informationTransmissive Optical Sensor with Phototransistor Output
TCST3 Transmissive Optical Sensor with Phototransistor Output 2837 DESCRIPTION 97_ The TCST3 is a transmissive sensor that include an infrared emitter and phototransistor, located face-to-face on the optical
More informationTriple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding
TCUT63X Triple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding DESCRIPTION The TCUT63X is a compact transmissive sensor that includes an infrared emitter and
More informationTransmissive Optical Sensor with Phototransistor Output
TCST23 Transmissive Optical Sensor with Phototransistor Output 2833 DESCRIPTION Top view The TCST23 is a transmissive sensor that includes an infrared emitter and phototransistor, located face-to-face
More informationTall Dome Dual Channel Transmissive Optical Sensor with Phototransistor Outputs
TCUT6X Tall Dome Dual Channel Transmissive Optical Sensor with Phototransistor Outputs DESCRIPTION The TCUT6X is a compact transmissive sensor that includes an infrared emitter and two phototransistor
More informationTransmissive Optical Sensor with Phototransistor Output
TCST23, TCST222, TCST23 Transmissive Optical Sensor with Phototransistor Output 98_4 DESCRIPTION 98_3 Top view The TCST23, TCST222, and TCST23 are transmissive sensors that include an infrared emitter
More informationReflective Optical Sensor with Transistor Output
CNY7 Reflective Optical Sensor with Transistor Output 2835 DESCRIPTION The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.
More informationReflective Optical Sensor with Transistor Output
www.vishay.com TCRT, TCRT Reflective Optical Sensor with Transistor Output 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x
More informationReflective Optical Sensor with Transistor Output
TCRT0, TCRT1010 Reflective Optical Sensor with Transistor Output 21836 TCRT0 A C E C TCRT1010 19155_1 FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x
More informationReflective Optical Sensor with PIN Photodiode Output
Reflective Optical Sensor with PIN Photodiode Output TCND5 19967 DESCRIPTION Detector Emitter The TCND5 is a reflective sensor that includes an infrared emitter and pin photodiode in a surface mount package
More informationReflective Optical Sensor with PIN Photodiode Output
TCND5 Reflective Optical Sensor with PIN Photodiode Output 19967 DESCRIPTION Detector Emitter The TCND5 is a reflective sensor that includes an infrared emitter and pin photodiode in a surface mount package
More informationReflective Optical Sensor with Transistor Output
TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 Peak operating distance: 2.5
More informationSilicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package 243 DESCRIPTION is a high speed silicon NPN epitaxial planar phototransistor in a miniature 85 package for surface mounting on printed boards. The device is sensitive
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION VBP104FAS VBP104FASR 21726-1 VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a
More informationAmbient Light Sensor in 0805 Package
Ambient Light Sensor in 0805 Package DESCRIPTION 20043 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 0805 package for surface mounting. It is sensitive
More informationSilicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package 243-1 DESCRIPTION is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 85 package for surface mounting. Filter bandwidth
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION VBPW34S VBPW34SR 21733 VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive
More informationAmbient Light Sensor
TEMD600FX0 Ambient Light Sensor DESCRIPTION 8527- TEMD600FX0 ambient light sensor is a PIN photodiode with high speed and high photo sensitivity in a clear, surface mount plastic package. The detector
More informationSilicon NPN Phototransistor
TEKT54S Silicon NPN Phototransistor 16733 DESCRIPTION TEKT54S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter.
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
More informationAmbient Light Sensor
Ambient Light Sensor DESCRIPTION 2118 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 94 8638-1 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared
More informationHigh Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH DESCRIPTION is an infrared, 850 nm side looking emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.
More informationReflective Optical Sensor with Transistor Output
VCNT22 Reflective Optical Sensor with Transistor Output DESCRIPTION The VCNT22 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector
More informationAmbient Light Sensor
Ambient Light Sensor DESCRIPTION ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 126 package for surface mounting. It is sensitive to visible light much
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8633 BPV23NF is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter
More informationSilicon NPN Phototransistor
TEFT43 Silicon NPN Phototransistor DESCRIPTION 94 8636-2 TEFT43 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
More informationAmbient Light Sensor
Ambient Light Sensor DESCRIPTION 94 839 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity
More informationReflective Optical Sensor with Transistor Output
TCRT, TCRT Reflective Optical Sensor with 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x 2.5 Peak operating distance: mm
More informationReflective Optical Sensor with Transistor Output
VCNT22 Reflective Optical Sensor with Transistor Output DESCRIPTION The VCNT22 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector
More informationSilicon PIN Photodiode
Silicon PIN Photodiode 20043- DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm 2 sensitive area and a daylight
More informationSilicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package TEMT7X1 Vishay Semiconductors 243-1 DESCRIPTION TEMT7X1 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 85 package
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm 2 sensitive area and a daylight blocking
More informationSilicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q1 Released 20535_1 DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a miniature surface mount
More information2-Channel EMI-Filter with ESD-Protection
2-Channel EMI-Filter with 9499 6 5 4 2 3 MARKING (example only) XX YY Dot = pin marking YY = type code (see table below) XX = date code 9957 2 FEATURES Ultra compact LLP75-6A package 2-channel EMI-filter
More informationSilicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal
More informationSilicon PIN Photodiode, RoHS Compliant
BPW83 DESCRIPTION 94 8490 BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870
More informationSmall Signal Fast Switching Diode FEATURES
Small Signal Fast Switching Diode = Cathode = Anode 6 MARKING (example only) FEATURES These diodes are also available in other case styles including the DO- case with the type designation N8, the MiniMELF
More informationInfrared Emitting Diode, 950 nm, GaAs
TSUS52, TSUS521, TSUS522 Infrared Emitting Diode, 95 nm, GaAs DESCRIPTION 94 839 TSUS52 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES Package
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION is a silicon NPN epitaxial planar phototransistor in a miniature side looking, surface mount package (SMD) with dome lens and daylight blocking filter. Filter bandwidth
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor VEMT37 DESCRIPTION 9 8553 VEMT37 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device
More informationSilicon NPN Phototransistor
TEKT54S Silicon NPN Phototransistor 16733 DESCRIPTION TEKT54S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter.
More informationInfrared Emitting Diode, 950 nm, GaAs
Infrared Emitting Diode, 95 nm, CQY37N DESCRIPTION 94 8638-2 CQY37N is an infrared, 95 nm emitting diode in technology molded in a miniature, clear plastic package with lens. FEATURES Package type: leaded
More informationSilicon PIN Photodiode
BPVNF Silicon PIN Photodiode DESCRIPTION 640- BPVNF is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched
More informationHigh Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
High Speed Infrared Emitting Diode, 83 nm, GaAlAs Double Hetero 94 8389 DESCRIPTION is an infrared, 83 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed,
More informationSilicon PIN Photodiode, RoHS Compliant
Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
More informationHigh Intensity Red Low Current Seven Segment Display
High Intensity Red Low Current Seven Segment Display DESCRIPTION 19237 This series defines a new standard for low current displays. It is a single digit 7-segment LED display utilizing AllnGaP technology
More informationSilicon PIN Photodiode
BPV Silicon PIN Photodiode DESCRIPTION 94 8390 BPV is a PIN photodiode with high speed and high radiant sensitivity in clear, T-¾ plastic package. It is sensitive to visible and near infrared radiation.
More informationAmbient Light Sensor
TEMT6X1 Ambient Light Sensor DESCRIPTION TEMT6X1 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 126 package for surface mounting. It is sensitive to visible
More informationZener Diodes FEATURES
ZPYV9 to ZPY Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT FEATURES Silicon planar power Zener diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages
More informationTelecom Switch - 1 Form A Solid-State Relay
Telecom Switch - Form A Solid-State Relay i795- DESCRIPTION S 8 S' 7 The LH529FP and LH529GP telecom switches consist of an optically coupled solid state relay (SSR) and a bidirectional input optocoupler.
More informationSilicon NPN Phototransistor, RoHS Compliant
Silicon NPN Phototransistor, RoHS Compliant TEST26 DESCRIPTION 9 673 TEST26 is a silicon NPN phototransistor with high radiant sensitivity in black, miniature, side view plastic package with daylight blocking
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL76 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL76 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted
More informationAmbient Light Sensor in 0805 Package
Ambient Light Sensor in 0805 Package DESCRIPTION ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 0805 package for surface mounting. It is sensitive to
More informationOptocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package
TCMT Series, TCMT4 Series Vishay Semiconductors Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8633 BPV22NF is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter
More informationAmbient Light Sensor
Ambient Light Sensor FEATURES Package type: Surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 Radiant sensitive area (in mm 2 ): 0.27 AEC-Q101 qualified High photo sensitivity
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters
More informationHigh Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero 94 839 DESCRIPTION is an infrared, 89 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
More informationIR Sensor Module for Remote Control Systems
IR Sensor Module for Remote Control Systems MECHANICAL DATA Pinning: 1 = Carrier OUT, 2 = GND, 3 = V S 19026 FEATURES Photo detector and preamplifier in one package AC coupled response from 30 khz to 50
More informationSilicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 94 8391 BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation.
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters
More informationSilicon NPN Phototransistor in, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
Compliant, Released for Lead (Pb)-free 21568 VEMT22X1 DESCRIPTION VEMT2X1 VEMT2X1 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens
More informationOptocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
TSAL44 High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8636 TSAL44 is an infrared, 94 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic
More informationHigh Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
High Speed Infrared Emitting Diode, 89 nm, GaAlAs, DH DESCRIPTION is an infrared, 89 nm, side looking emitting diode in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted
More informationHigh Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLight TM portfolio, the is an infrared, 850 nm emitting diode based on surface emitter technology with
More informationOptocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package
TCMT Series, TCMT4 Series Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling
More informationAmbient Light Sensor
TEMD600FX0 Ambient Light Sensor DESCRIPTION 8527- TEMD600FX0 ambient light sensor is a PIN photodiode with high speed and high photo sensitivity in a clear, surface mount plastic package. The detector
More informationHigh Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
High Power Infrared Emitting Diode, RoHS Compliant, 94 nm, GaAlAs/GaAs TSML TSML13 TSML12 TSML14 16852 DESCRIPTION TSML is an infrared, 94 nm emitting diode in GaAlAs/GaAs with high radiant power molded
More informationTransmissive Optical Sensor with Phototransistor Output
Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical
More informationInfrared Emitting Diode, 950 nm, GaAs
TSUS54, TSUS541, TSUS542 Infrared Emitting Diode, 95 nm, DESCRIPTION 94 839 TSUS54 is an infrared, 95 nm emitting diode in technology molded in a blue-gray tinted plastic package. FEATURES Package type:
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
TSML, TSML12, TSML13, TSML14 High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW TSML TSML13 TSML12 TSML14 16852 DESCRIPTION TSML is an infrared, 94 nm emitting diode in GaAlAs multi quantum well (MQW)
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES 2842 DESCRIPTION i79004-5 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS
More informationHigh Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,
More informationHigh Intensity Red Low Current 7-Segment Display
TDSR50, TDSR60 High Intensity Red Low Current 7-Segment Display 19236 DESCRIPTION This series defines a new standard for low current displays. It is a single digit 7-segment LED display utilizing AllnGaP
More informationIR Sensor Module for Remote Control Systems
IR Sensor Module for Remote Control Systems MECHANICAL DATA Pinning: 1 = Carrier OUT, 2 = GND, 3 = V S 19026 FEATURES Photo detector and preamplifier in one package AC coupled response from 20 khz to 60
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION VBPW34FAS VBPW34FASR 21726 VBPW34FAS and VBPW34FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5
More informationOptocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package
ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T
More informationSilicon PIN Photodiode
VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is
More informationHigh Efficiency LED in Ø 3 mm Tinted Diffused Package
TLHY44KL2 High Efficiency LED in Ø 3 mm Tinted Diffused Package DESCRIPTION 922 The TLHY44KL2 series was developed for standard applications like general indicating and lighting purposes. It is housed
More informationHigh Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
High Speed Infrared Emitting Diode, 94 nm, GaAlAs Double Hetero 21531 DESCRIPTION is an infrared, 94 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed, molded
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability Industry standard dual-in-line package C 5 C Compliant to RoHS directive /95/EC
More informationSmall Signal Zener Diodes
Small Signal Zener Diodes FEATURES Zener voltage specified at 5 μa Maximum delta V Z given from μa to μa Very high stability Low noise AEC-Q qualified Material categorization: For definitions of compliance
More informationLow Current LED in Ø 5 mm Tinted Diffused Package
TLLR54., TLLY54., TLLG54. Low Current LED in Ø 5 mm Tinted Diffused Package 9223 PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 5 mm Product series: low current Angle of half intensity: ± 25
More informationAmbient Light Sensor, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
Ambient Light Sensor, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q11 Released Description TEMT6X1 ambient light sensor plays a key role in power savings strategies by controlling LCD
More informationHigh Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
High Speed Infrared Emitting Diode, 85 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLight TM portfolio, the is an infrared, 85 nm, side looking emitting diode based on GaAlAs surface emitter
More informationSmall Signal Fast Switching Diode
N45WS-G Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8 mm tape), 5K/box FEATURES Silicon
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 0.23 mm
More information