Transmissive Optical Sensor with Phototransistor Output

Size: px
Start display at page:

Download "Transmissive Optical Sensor with Phototransistor Output"

Transcription

1 TCST23 Transmissive Optical Sensor with Phototransistor Output 2833 DESCRIPTION Top view The TCST23 is a transmissive sensor that includes an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light. A C E C 925_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 9.2 x 4.8 x 5.4 Gap (in mm): 2.8 Aperture (in mm):.5 Typical output current under test: I C = 2 ma Daylight blocking filter Emitter wavelength: 95 nm Lead (Pb)-free soldering released Material categorization: For definitions of compliance please see APPLICATIONS Optical switch Shaft encoder Detection of opaque material such as paper Detection of magnetic tapes PRODUCT SUMMARY PART NUMBER GAP WIDTH (mm) Note Conditions like in table basic characteristics/coupler APERTURE WIDTH (mm) TYPICAL OUTPUT CURRENT UNDER TEST () (ma) DAYLIGHT BLOCKING FILTER INTEGRATED TCST Yes ORDERING INFORMATION ORDERING CODE PACKAGING VOLUME () REMARKS TCST23 Tube MOQ: 48 pcs, 6 pcs/tube - Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T amb 25 C P tot 25 mw Ambient temperature range T amb - 25 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature Distance to package.6 mm, t 5 s T sd 26 C INPUT (EMITTER) Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p μs I FSM 3 A Power dissipation T amb 25 C P V mw Junction temperature T j C Rev. 2., 2-Sep-2 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 TCST23 ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR) Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C ma Power dissipation T amb 25 C P V 5 mw Junction temperature T j C ABSOLUTE MAXIMUM RATINGS 4 P - Power Dissipation (mw) 3 Coupled device 2 Phototransistor IR-diode T amb - Ambient Temperature ( C) 5 Fig. - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector current V CE = V, I F = 2 ma I C.5 4 ma Collector emitter saturation voltage I F = 2 ma, I C =.2 ma V CEsat.4 V INPUT (EMITTER) Forward voltage I F = 6 ma V F.25.5 V Junction capacitance V R = V, f = MHz C j 5 pf OUTPUT (DETECTOR) Collector emitter voltage I C = ma V CEO 7 V Emitter collector voltage I E = μa V ECO 7 V Collector dark current V CE = 25 V, I F = A, E = lx I CEO na SWITCHING CHARACTERISTICS Turn-on time Turn-off time I C = ma, V CE = 5 V, R L = Ω (see figure 2) I C = ma, V CE = 5 V, R L = Ω (see figure 2) t on 5 μs t off μs Rev. 2., 2-Sep-2 2 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 TCST23 I F I F R G = 5 Ω t p T =. t p = 5 µs I F + 5 V I C = ma; adjusted by I F I C % 9 % t p t Ω Ω Channel I Channel II Oscilloscope R L MΩ C L 2 pf % t p t d t r t on (= t d + t r ) t r t d t on Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t Storage time Fall time Turn-off time Fig. 2 - Test Circuit for t on and t off Fig. 3 - Switching Times BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage I CEO - Collector Dark Current (na) 95 9 V CE = 25 V I F = A T amb - Ambient Temperature ( C) Fig. 6 - Collector Dark Current vs. Ambient Temperature CTR rel - Relative Current Transfer Ratio V CE = 5 V I F = 2 ma T amb - Ambient Temperature ( C) I - Collector Current (ma) C V CE = V I F - Forward Current (ma) Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 7 - Collector Current vs. Forward Current Rev. 2., 2-Sep-2 3 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 TCST23 I - Collector Current (ma) C I F = 5 ma 2 ma ma 5 ma 2 ma V CE - Collector Emitter Voltage (V) Fig. 8 - Collector Current vs. Collector Emitter Voltage I - Relative Collector Current Crel A =.5 mm Fig. - Relative Collector Current vs. Displacement s s - Displacement (mm) CTR - Current Transfer Ratio (%) V CE = 5 V I F - Forward Current (ma) Fig. 9 - Current Transfer Ratio vs. Forward Current t on / t off - Turn on/turn off Time (µs) Non saturated operation V S = 5 V R L = Ω I C - Collector Current (ma) Fig. - Turn-on/Turn-off Time vs. Collector Current t on t off Rev. 2., 2-Sep-2 4 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 TCST23 PACKAGE DIMENSIONS in millimeters TUBE DIMENSIONS in millimeters 2256 Rev. 2., 2-Sep-2 5 Document Number: For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Packaging and Ordering Information Packaging and Ordering Information PART NUMBER MOQ () PCS PER TUBE Notes () MOQ: minimum order quantity (2) Please refer to datasheets TUBE SPECIFICATION FIGURES TUBE SPEC. (FIGURE) CONSTITUENTS (FORMS) CNY TCPT3X 2 Reel (2) 29 TCRT Bulk - 26 TCRT Bulk - 26 TCRT TCRT5L TCST TCST3L TCST TCST TCST TCST TCST TCST TCST TCST TCUT3X 2 Reel (2) 29 TCZT82-PAER 25 Bulk Fig. Document Number: 82 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 2-Jul-9

7 Packaging and Ordering Information Packaging and Ordering Information 52 Fig Fig. 3 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 82 2 Rev.., 2-Jul-9

8 Packaging and Ordering Information Packaging and Ordering Information 599 Fig. 4 Fig Document Number: 82 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 2-Jul-9 3

9 Packaging and Ordering Information Packaging and Ordering Information 596 Fig Fig. 7 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 82 4 Rev.., 2-Jul-9

10 Packaging and Ordering Information Packaging and Ordering Information 2257 Fig. 8 Document Number: 82 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 2-Jul-9 5

11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST3 Transmissive Optical Sensor with Phototransistor Output 2837 DESCRIPTION 97_ The TCST3 is a transmissive sensor that include an infrared emitter and phototransistor, located face-to-face on the optical

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST23, TCST222, TCST23 Transmissive Optical Sensor with Phototransistor Output 98_4 DESCRIPTION 98_3 Top view The TCST23, TCST222, and TCST23 are transmissive sensors that include an infrared emitter

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST23 Transmissive Optical Sensor with Phototransistor Output 2833 DESCRIPTION Top view The TCST23 is a transmissive sensor that includes an infrared emitter and phototransistor, located face-to-face

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST3, TCST22, TCST3 Transmissive Optical Sensor with Phototransistor Output DESCRIPTION 98_3 98_5 Top view + E.3" 7.6 mm The TCST3, TCST22, and TCST3 are transmissive sensors that include an infrared

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST23, TCST222, TCST23 Transmissive Optical Sensor with Phototransistor Output 98_4 DESCRIPTION 98_3 Top view The TCST23, TCST222, and TCST23 are transmissive sensors that include an infrared emitter

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 Peak operating distance: 2.5

More information

Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs

Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs TCUT135X1 Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs 19534 DESCRIPTION The TCUT135X1 is a compact transmissive sensor that includes an infrared emitter and two phototransistor

More information

Matched Pairs of Emitters and Detectors

Matched Pairs of Emitters and Detectors Matched Pairs of Emitters and Detectors TCZT82 96 237_ DESCRIPTION The TCZT82 include matched infrared emitters and phototransistors in leaded packages, used to assemble custom-designed transmissive sensors

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output CNY7 Reflective Optical Sensor with Transistor Output 2835 DESCRIPTION The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output www.vishay.com TCRT, TCRT Reflective Optical Sensor with Transistor Output 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output TCRT0, TCRT1010 Reflective Optical Sensor with Transistor Output 21836 TCRT0 A C E C TCRT1010 19155_1 FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x

More information

Subminiature Transmissive Optical Sensor with Transistor Output

Subminiature Transmissive Optical Sensor with Transistor Output TCPT135X1 Subminiature Transmissive Optical Sensor with Transistor Output 1961 DESCRIPTION The TCPT135X1 is a compact transmissive sensor that includes an infrared emitter and a phototransistor detector,

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output Reflective Optical Sensor with Transistor Output CNY7 2835 DESCRIPTION The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.

More information

Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs

Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs TCUT13X1 Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs 19534 DESCRIPTION The TCUT13X1 is a compact transmissive sensor that includes an infrared emitter and two phototransistor

More information

Triple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding

Triple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding TCUT63X Triple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding DESCRIPTION The TCUT63X is a compact transmissive sensor that includes an infrared emitter and

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output TCRT, TCRT Reflective Optical Sensor with 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x 2.5 Peak operating distance: mm

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output CNY7 OPTO A TRAN REFLECTIVO Reflective Optical Sensor with Transistor Output 2835 DESCRIPTION The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which

More information

Tall Dome Dual Channel Transmissive Optical Sensor with Phototransistor Outputs

Tall Dome Dual Channel Transmissive Optical Sensor with Phototransistor Outputs TCUT6X Tall Dome Dual Channel Transmissive Optical Sensor with Phototransistor Outputs DESCRIPTION The TCUT6X is a compact transmissive sensor that includes an infrared emitter and two phototransistor

More information

Reflective Optical Sensor with PIN Photodiode Output

Reflective Optical Sensor with PIN Photodiode Output TCND5 Reflective Optical Sensor with PIN Photodiode Output 19967 DESCRIPTION Detector Emitter The TCND5 is a reflective sensor that includes an infrared emitter and pin photodiode in a surface mount package

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 0.2 x 5.8 x 7 Peak operating distance: 2.5

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor TEKT54S Silicon NPN Phototransistor 16733 DESCRIPTION TEKT54S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter.

More information

Reflective Optical Sensor with PIN Photodiode Output

Reflective Optical Sensor with PIN Photodiode Output Reflective Optical Sensor with PIN Photodiode Output TCND5 19967 DESCRIPTION Detector Emitter The TCND5 is a reflective sensor that includes an infrared emitter and pin photodiode in a surface mount package

More information

Silicon NPN Phototransistor, RoHS Compliant

Silicon NPN Phototransistor, RoHS Compliant Silicon NPN Phototransistor, RoHS Compliant TEST26 DESCRIPTION 9 673 TEST26 is a silicon NPN phototransistor with high radiant sensitivity in black, miniature, side view plastic package with daylight blocking

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 94 8391 BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation.

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 285 BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T- plastic package. It is sensitive to visible and near infrared radiation. FEATURES

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output VCNT22 Reflective Optical Sensor with Transistor Output DESCRIPTION The VCNT22 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector

More information

Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package

Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package TLSV5 96496 PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 2.5 mm x 5 mm symbol Product series: bicolor Angle of half intensity:

More information

Silicon NPN Phototransistor, RoHS Compliant

Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal

More information

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8389 is an infrared, 94 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power molded in a clear,

More information

Optocoupler, Phototransistor Output, ATEX Certified

Optocoupler, Phototransistor Output, ATEX Certified Optocoupler, Phototransistor Output, ATEX Certified 6965- DESCRIPTION The consists of a phototransistor optically coupled to an infrared-emitting diode in a 4 pin plastic package. The components are mounted

More information

Silicon PIN Photodiode

Silicon PIN Photodiode BPVNF Silicon PIN Photodiode DESCRIPTION 640- BPVNF is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor TEFT43 Silicon NPN Phototransistor DESCRIPTION 94 8636-2 TEFT43 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor TEKT54S Silicon NPN Phototransistor 16733 DESCRIPTION TEKT54S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter.

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION 94 8632 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation.

More information

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 83 nm, GaAlAs Double Hetero 94 8389 DESCRIPTION is an infrared, 83 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed,

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output VCNT22 Reflective Optical Sensor with Transistor Output DESCRIPTION The VCNT22 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector

More information

Ambient Light Sensor

Ambient Light Sensor Ambient Light Sensor DESCRIPTION 2118 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth

More information

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant BPW83 DESCRIPTION 94 8490 BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870

More information

Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package

Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package TCMD, TCMD4 Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package 9 8 FEATURES Low profile package (half pitch) 7298 7298_2 DESCRIPTION The TCMD, TCMD4 consist

More information

Optocoupler, Phototransistor Output, Very High Isolation Voltage

Optocoupler, Phototransistor Output, Very High Isolation Voltage Vishay Semiconductors Optocoupler, Phototransistor Output, 787-4 DESCRIPTION CNY64 CNY65 CNY66 Top View A C The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical

More information

Low Current LED in Ø 5 mm Tinted Diffused Package

Low Current LED in Ø 5 mm Tinted Diffused Package TLLR54., TLLY54., TLLG54. Low Current LED in Ø 5 mm Tinted Diffused Package 9223 PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 5 mm Product series: low current Angle of half intensity: ± 25

More information

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs TSUS43 Infrared Emitting Diode, 95 nm, GaAs DESCRIPTION 94 8636-1 TSUS43 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue tinted plastic package. FEATURES Package type: leaded Package

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION 94 8638-1 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared

More information

High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH

High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH High Speed Infrared Emitting Diode, 89 nm, GaAlAs, DH DESCRIPTION is an infrared, 89 nm, side looking emitting diode in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted

More information

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8636 is an infrared, 94 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package.

More information

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 85 nm, GaAlAs Double Hetero 94 839 DESCRIPTION is an infrared, 85 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded

More information

Silicon Phototransistor in 0805 Package

Silicon Phototransistor in 0805 Package Silicon Phototransistor in 85 Package 243-1 DESCRIPTION is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 85 package for surface mounting. Filter bandwidth

More information

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, AC Input K84P, K824P, K844P Optocoupler, Phototransistor FEATURES Endstackable to 2.54 mm (.") spacing 722_2 C E A C 4pin DESCRIPTION 8 pin The K84P, K824P, K844P consist of a phototransistor optically coupled

More information

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs DESCRIPTION 94 8638 is an infrared, 95 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. FEATURES Package type: leaded Package form: T-¾ Dimensions (in mm):

More information

High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero

High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero TSPF62 High Power Infrared Emitting Diode, 89 nm, GaAlAs / Double Hetero 94 8389 DESCRIPTION TSPF62 is an infrared, 89 nm emitting diode in GaAlAs / double hetero (DH) technology with high radiant power,

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor DESCRIPTION is a silicon NPN epitaxial planar phototransistor in a miniature side looking, surface mount package (SMD) with dome lens and daylight blocking filter. Filter bandwidth

More information

Ambient Light Sensor

Ambient Light Sensor Ambient Light Sensor DESCRIPTION 94 839 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity

More information

Optocoupler, Phototransistor Output

Optocoupler, Phototransistor Output Optocoupler, Phototransistor Output TCDT2, TCDT2G Vishay Semiconductors 72_4 DESCRIPTION 72_6 NC C E 6 5 4 2 3 The TCDT2(G) series consists of a phototransistor optically coupled to a gallium arsenide

More information

Optocoupler, Phototransistor Output, SSOP-4, Half Pitch, Mini-Flat Package

Optocoupler, Phototransistor Output, SSOP-4, Half Pitch, Mini-Flat Package Optocoupler, Phototransistor Output, SSOP-4, Half Pitch, Mini-Flat Package 22628- DESCRIPTION The series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor

More information

Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package

Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package TCMT Series, TCMT4 Series Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling

More information

Optocoupler, Phototransistor Output

Optocoupler, Phototransistor Output Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES DC isolation test voltage 5 V RMS Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Programmable logic

More information

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLight TM portfolio, the is an infrared, 940 nm, side looking emitting diode based on GaAlAs surface

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor VEMT37 DESCRIPTION 9 8553 VEMT37 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device

More information

Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package

Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package 22628- DESCRIPTION The series has a GaAs infrared emitting diode emitter, which is optically coupled

More information

Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package

Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package VOM68A Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package FEATURES Operating temperature from - 55 C to + C A 4 C SOP-4 mini-flat package CTR range 4 % to 6 %, I F = ma C 2 3 E Isolation

More information

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW High Speed Infrared Emitting Diodes, 9 nm, GaAlAs, MQW DESCRIPTION is an infrared, 9 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,

More information

Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package

Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package TCMT Series, TCMT4 Series Vishay Semiconductors Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling

More information

High Intensity LED in Ø 3 mm Tinted Diffused Package

High Intensity LED in Ø 3 mm Tinted Diffused Package High Intensity LED in Ø 3 mm Tinted Diffused Package DESCRIPTION 19222 This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm diffused plastic package.

More information

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 83 nm, GaAlAs Double Hetero 26 DESCRIPTION is an infrared, 83 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded

More information

Universal LED in Ø 3 mm Tinted Diffused Package

Universal LED in Ø 3 mm Tinted Diffused Package Universal LED in Ø 3 mm Tinted Diffused Package 9220 PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 3 mm Product series: standard Angle of half intensity: ± 30 FEATURES For DC and pulse operation

More information

Silicon NPN Phototransistor, RoHS Compliant

Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal

More information

Optocoupler, Photodarlington Output, SOP-4L, Long Mini-Flat Package

Optocoupler, Photodarlington Output, SOP-4L, Long Mini-Flat Package Optocoupler, Photodarlington Output, SOP-4L, Long Mini-Flat Package 7295-5 DESCRIPTION The consists of a darlington phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a

More information

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology High Speed Infrared Emitting Diode, 85 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLight TM portfolio, the is an infrared, 85 nm, side looking emitting diode based on GaAlAs surface emitter

More information

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 94 nm, GaAlAs Double Hetero 21531 DESCRIPTION is an infrared, 94 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed, molded

More information

Small Signal Switching Diode, Dual

Small Signal Switching Diode, Dual Small Signal Switching Diode, Dual 3 1 2 18108_1 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching dual diode with common cathode AEC-Q101 qualified

More information

Ambient Light Sensor in 0805 Package

Ambient Light Sensor in 0805 Package Ambient Light Sensor in 0805 Package DESCRIPTION ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 0805 package for surface mounting. It is sensitive to

More information

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,

More information

Universal LED in Ø 5 mm Tinted Diffused Package

Universal LED in Ø 5 mm Tinted Diffused Package TLUR54, TLUR54 Universal LED in Ø 5 mm Tinted Diffused Package 9223 PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 5 mm Product series: standard Angle of half intensity: ± 3 FEATURES For DC

More information

Optocoupler, Phototransistor Output, Quad Channel, Half Pitch Mini-Flat Package

Optocoupler, Phototransistor Output, Quad Channel, Half Pitch Mini-Flat Package TCMT4, TCMT46 Optocoupler, Phototransistor Output, Quad Channel, Half Pitch Mini-Flat Package 22775 DESCRIPTION The TCMT4. series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting

More information

Small Signal Switching Diode

Small Signal Switching Diode Small Signal Switching Diode 2 DESIGN SUPPORT TOOLS click logo to get started 3 FEATURES Silicon epitaxial planar diode Fast switching diode in case SOT-23, especially suited for automatic insertion AEC-Q

More information

Silicon PIN Photodiode

Silicon PIN Photodiode VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is

More information

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Infrared Emitting Diode, RoHS Compliant, DESCRIPTION 948642 is an infrared, 95 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. FEATURES Package type: leaded Package

More information

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 83 nm, GaAlAs Double Hetero 94 8389 DESCRIPTION is an infrared, 83 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed,

More information

Ambient Light Sensor

Ambient Light Sensor Ambient Light Sensor DESCRIPTION ambient light sensor is a silicon NPN epitaxial planar phototransistor in a miniature transparent 126 package for surface mounting. It is sensitive to visible light much

More information

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs Infrared Emitting Diode, 95 nm, GaAs DESCRIPTION 94 839 TSUS54 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES Package type: leaded Package

More information

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero 94 8389 DESCRIPTION is an infrared, 89 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed,

More information

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs TSUS52, TSUS521, TSUS522 Infrared Emitting Diode, 95 nm, GaAs DESCRIPTION 94 839 TSUS52 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES Package

More information

Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package

Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package TCLT11. Series Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package 22649 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide

More information

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero 94 839 DESCRIPTION is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION 94 8633 BPV22NF is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter

More information

Infrared Emitting Diode, 875 nm, GaAlAs

Infrared Emitting Diode, 875 nm, GaAlAs TSHA52, TSHA521, TSHA522, TSHA523 Infrared Emitting Diode, 875 nm, GaAlAs DESCRIPTION 94 839 The TSHA52. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic

More information

Ambient Light Sensor

Ambient Light Sensor TEMD600FX0 Ambient Light Sensor DESCRIPTION 8527- TEMD600FX0 ambient light sensor is a PIN photodiode with high speed and high photo sensitivity in a clear, surface mount plastic package. The detector

More information

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS Optocoupler, Phototransistor Output, High Reliability, 53 V RMS A C 1 2 4 3 C E FEATURES Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation test voltage,

More information

High Intensity LED in Ø 3 mm Tinted Non-Diffused Package

High Intensity LED in Ø 3 mm Tinted Non-Diffused Package High Intensity LED in Ø 3 mm Tinted Non-Diffused Package DESCRIPTION 19222 This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm clear plastic package.

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode DESIGN SUPPORT TOOLS click logo to get started Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diode AEC-Q qualified available (part number on request) Base P/N-G3

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection Optocoupler, Phototransistor Output, with Base Connection FEATURES A 1 6 B Isolation test voltage: 5 V RMS Long term stability C 2 5 C Industry standard dual-in-line package NC 3 4 E Material categorization:

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection Alternative Device Available, Use CNY7 www.vishay.com CNY7., CNY7G Optocoupler, Phototransistor Output, with Base Connection FEATURES 7_ DESCRIPTION i79- The CNY7 is an optically coupled pair consisting

More information

Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package

Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package 22628- DESCRIPTION The series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters

More information

High Efficiency LED in Ø 3 mm Clear Package

High Efficiency LED in Ø 3 mm Clear Package TLHG49, TLHR49, TLHY49 High Efficiency LED in Ø 3 mm Clear Package DESCRIPTION 9222 The TLH.49 series was developed for applications where high light output is requi. It is housed in a 3 mm clear plastic

More information

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, 110 C Rated

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, 110 C Rated Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, 11 C Rated 17918-2 DESCRIPTION The 11 C rated (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage.

More information

Ambient Light Sensor

Ambient Light Sensor Ambient Light Sensor FEATURES Package type: Surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 Radiant sensitive area (in mm 2 ): 0.27 AEC-Q101 qualified High photo sensitivity

More information