Driver Amplifier for 7 Tesla MRI Smart Power Amplifier
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1 Driver Amplifier for 7 Tesla MRI Smart Power Amplifier presented by Kevin Kolpatzeck supervised by Prof. Dr.-Ing. Klaus Solbach Institute of Microwave and RF Technology University of Duisburg Essen
2 Contents Introduction Concept Power Amplifier Gate Bias Circuit Voltage Regulator Power Monitor Assembly Conclusion Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 2
3 Introduction 7 Tesla MRI system employs 32 channels, each of which can produce 1 kw of pulsed power at 300 MHz each channel consists of an RF power amplifier and a cartesian feedback loop Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 3
4 Introduction 1 kw power amplifier: Driver Amplifier will be used to evaluate some concepts for the driver and high-power stage, e.g. Temperature Compensation Power Monitor Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 4
5 Concept Driver Amplifier can be divided into five sub circuits: - Operating Point Stabilization - Class A / Class AB Switching - Temperature Compensation - On / Off Switching - Drain Source Voltage Stabilization - Load Regulation - Easy & precise monitoring of - pulse power - momentary power Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 5
6 Power Amplifier Power Amplifier Concept Power amplifier is built around a Freescale MRF6V2010N RF power MOSFET n channel enhancement mode Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 6
7 Power Amplifier Input Circuit Input circuit provides d.c. feed and matching of the 50 Ω source to the input of the MOSFET d.c. block d.c. feed and first stage of matching second stage of matching Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 7
8 Power Amplifier Input Reflection Coefficient S 11 Best match has been achieved with the two stage matching network, that is however quite different from the manufacturer s recommendation Input reflection coefficient S 11 has been measured with a vector network analyzer (VNA) for a Class A and a Class AB operating point Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 8
9 Power Amplifier Input Reflection Coefficient S 11 Small signal (P in = 0 dbm) input reflection coefficient S 11 as measured with VNA Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 9
10 Power Amplifier Output Circuit Output circuit provides d.c. feed and matching of the output of the MOSFET to the 50 Ω load d.c. feed and first stage of matching second stage of matching d.c. block Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 10
11 Power Amplifier Power Gain Power gain (forward transmission coefficient S 21 ) is determined by operating point input power quality of the input and output matching networks Power gain has been measured with vector network analyzer (VNA) RF signal generator and power meter (RF signal generator and spectrum analyzer) Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 11
12 Power Amplifier Power Gain Small signal (P in = 0 dbm) power gain S 21 as measured with VNA Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 12
13 Power Amplifier Power Gain Power gain and P 1dB as measured with RF signal generator and power meter Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 13
14 Power Amplifier Intermodulation Distortion Third order intermodulation products are not affected by output filter, so they can be used to quantify the harmonic distortion caused by the MOSFET. Third order intercept point has been measured with a two tone measurement: Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 14
15 Power Amplifier Intermodulation Distortion Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 15
16 Power Amplifier Summarized Data Input Reflection Coefficient S 11 (P in = 1 mw / 0 dbm) Small signal power gain (P in = 1 mw / 0 dbm) VNA 33 db Power Meter Spectrum Analyzer Datasheet These values need some discussion! 27.5 db 27.1 db ca. 24 db P 1dB 15.2 dbm ca dbm Maximum Output Power (P in = 100 mw / 20 dbm) 19.1 W / 42.8 dbm 12.6 W / 41 dbm IIP 3 OIP dbm 49.5 dbm Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 16
17 Power Amplifier Discussion Small signal power gain and maximum output power strongly exceed the values to be expected from the datasheet. Explanations: Measurements have been performed with three different principles, leading to similar results plausible Measurements at V GS = 3.4 V (Class A); datasheet values at I DQ = 30 ma (corresponding to V GS 2.6 V; close to Class B) Measured input return loss S 11 is approx. 33 db; datasheet values are between 14 and 9 db Input and output matching networks are quite different from the networks in the datasheet, both in architecture and component values realized matching networks are supposedly better than the manufacturer s Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 17
18 Gate Bias Circuit Concept Operating Point Stabilization Choosing a Class A and a Class AB operating point Switching between these two points Temperature stabilization of the quiescent current Fast switching between the designated gate bias voltage and V GS = 0 V Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 18
19 Gate Bias Circuit Operating Point Selection TTL input Input voltage is stabilized against ripple and noise on the power supply rail with low-pass filter and Zener diode. One potentiometer (R 3 ) allows the selection of the Class A operating point. A portion of a second potentiometer (R 5 ) is bypassed by a logic-level MOSFET T1 when a voltage of 5 V is applied at its gate. This potentiometer determines the distance between the Class A and the Class AB operating point. Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 19
20 Gate Bias Circuit Operating Point Selection Only certain pairs of operating points can be reached with this circuit Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 20
21 Gate Bias Circuit Temperature Compensation The threshold voltage of a MOSFET decreases with increasing temperature the quiescent drain current increases. dv th dt = 1 + γ dv inv 2 V inv dt with dv inv dt = mv K The operating point shifts as the device heats up. Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 21
22 Gate Bias Circuit Temperature Compensation The forward voltage V D of a silicon pn diode follows a similar law as the dv threshold voltage of a MOSFET: D 1.7 mv dt K Compensation principle: one pn diode is placed far away from the MOSFET (approximately ambient temperature) one pn diode is placed close to the MOSFET (approximately junction temperature) The difference between the forward voltages is amplified and added to the selected gate bias voltage by a differential amplifier with common mode offset input of type AD8137 Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 22
23 Gate Bias Circuit Temperature Compensation Sensor diode is placed next to the MOSFET, not on top because diode picks up electromagnetic field radiated by the MOSFET Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 23
24 Gate Bias Circuit Temperature Compensation Common-mode offset Differential amplifier with feedback potentiometers Temperature sensing diode Reference diode V Bias = V Bias + R 5 R 3 (V D1 V D2 ) Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 24
25 Gate Bias Circuit Temperature Compensation The feedback potentiometers around the differential amplifier must be set to the same value for the common mode offset to work properly A procedure for adjusting the feedback resistors for optimum temperature compensation has been developed. The quiescent drain current is held constant to within about 10 ma. Problem: In an enclosure the reference diode will eventually heat up, too. Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 25
26 Gate Bias Circuit On Off Switching Pulsed operation: amplifier does not need to be in its operating point when no pulse is present at the RF input Power dissipated in the MOSFET can be reduced by switching V GS to 0 V between the pulses. TTL input Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 26
27 Voltage Regulator Concept Power amplifier needs stable drain source voltage, especially during the RF pulses Little current flowing into the drain between the pulses Significant current flowing into the drain during the pulses Large transients Power supply regulator is under stress Power line inductance hinders transients Power supply might not be able to provide the required drain current Solution: charging capacitors and discrete voltage regulator close to the amplifier Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 27
28 Voltage Regulator Circuit Charging capacitor Voltage regulator Voltage stabilization capacitor RF block Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 28
29 Voltage Regulator Static Line Regulation Static line regulation: dependence of the output of a regulator on the input in the static case slope 0.4, i.e. line regulation ca. 4 db slope 1 Regulation threshold Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 29
30 Voltage Regulator Load Regulation Load regulation: dependence of the output of a regulator on the load ΔV 66 mv, i.e. load regulation ca db Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 30
31 Power Monitor Concept Necessity to measure the output power of the amplifier during operation Difficult because of high frequency and large dynamic range Solution: AD8307 logarithmic amplifier converts RF voltage to d.c. voltage (envelope) outputs a voltage that is proportional to the logarithm of the input voltage Theoretically output power can be measured with a multimeter this way Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 31
32 Power Monitor Concept Output voltage of the driver amplifier needs to be reduced to within the input range of the AD8307 with a probe circuit Probe resistor with frequency compensation a.c. coupling 50 Ω termination Input equivalent circuit of the AD8307 Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 32
33 Power Monitor Frequency Response High frequency roll-off attenuates HF noise and harmonics Low frequency roll-off suppresses LF hum and d.c. offset Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 33
34 Power Monitor Pulsed Operation RF in: Gate ON: RF out: Logarithm of pulse output power AD8307 out: Logarithm of noise power Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 34
35 Power Monitor Sample and Hold Circuit Consequence for measurement of output power: Analog multimeter: approx. measures average power Oscilloscope: Digital multimeter: measures pulse and noise power does not allow any sensible measurement Solution: Sample and hold circuit based on an LF398 that holds the output voltage of the AD8307 between the pulses S/H circuit can be controlled by Gate ON voltage because it is supposed to be high only during the RF pulses Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 35
36 Power Monitor Complete Circuit Logarithmic amplifier IC Probe S/H Circuit Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 36
37 Power Monitor Calibration Relationship between d.c. output voltage and output power must be established Calibration against a reference power meter Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 37
38 Power Monitor Calibration Linear law between d.c. output voltage and power in dbm: P Pulse = V Pulse V dbm Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 38
39 Assembly Circuit Board Layout Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 39
40 Assembly Power MOSFET Mounting Good source ground connection (low resistance, low inductance) and low thermal resistance is important Glue on mounting on a self built brass heatsink Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 40
41 Assembly Power MOSFET Mounting Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 41
42 Assembly Housing Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 42
43 Assembly Additional Circuitry Signaling LEDs Inverter for the Gate ON voltage Polarity protection Placed on a perfboard underneath the lid of the box Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 43
44 Conclusion Complete, conveniently usable amplifier for amplification from 100 mw to 10 W Amplification and maximum output power higher than expected Relatively poor distortion figures Concepts for use in driver and high power amplifier have been tested and proven functional and useful Operating point flexibility Temperature compensation Gate shutdown Power Monitor Kevin Kolpatzeck Driver Amplifier for 7 Tesla MRI Smart Power Amplifier 44
45 Thank you for your interest!
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MP1496 High-Efficiency, 2A, 16V, 500kHz Synchronous, Step-Down Converter
The Future of Analog IC Technology DESCRIPTION The MP1496 is a high-frequency, synchronous, rectified, step-down, switch-mode converter with built-in power MOSFETs. It offers a very compact solution to
200 ma Output Current High-Speed Amplifier AD8010
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2MHz, High-Brightness LED Drivers with Integrated MOSFET and High-Side Current Sense
19-414; Rev 1; 9/8 EVALUATION KIT AVAILABLE 2MHz, High-Brightness LED Drivers with General Description The step-down constant-current high-brightness LED (HB LED) drivers provide a cost-effective design
RT9167/A. Low-Noise, Fixed Output Voltage,300mA/500mA LDO Regulator. Features. General Description. Applications. Ordering Information
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PowerAmp Design. PowerAmp Design PAD117A RAIL TO RAIL OPERATIONAL AMPLIFIER
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LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
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UNISONIC TECHNOLOGIES CO., LTD M4670 Preliminary CMOS IC
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Data Sheet SC5317 & SC5318A. 6 GHz to 26.5 GHz RF Downconverter SignalCore, Inc. All Rights Reserved
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High Gain Low Noise Amplifier Design Using Active Feedback
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General Description The RT9167/A is a 3mA/mA low dropout and low noise micropower regulator suitable for portable applications. The output voltages range from 1.V to.v in 1mV increments and 2% accuracy.
Small 1A, Low-Dropout Linear Regulator in a 2.7mm x 1.6mm Package
EVALUATION KIT AVAILABLE MAX15101 General Description The MAX15101 is a small, low-dropout linear regulator optimized for networking, datacom, and server applications. The regulator delivers up to 1A from
High-Efficiency, 26V Step-Up Converters for Two to Six White LEDs
19-2731; Rev 1; 10/03 EVALUATION KIT AVAILABLE High-Efficiency, 26V Step-Up Converters General Description The step-up converters drive up to six white LEDs with a constant current to provide backlight
FAN MHz TinyBoost Regulator with 33V Integrated FET Switch
FAN5336 1.5MHz TinyBoost Regulator with 33V Integrated FET Switch Features 1.5MHz Switching Frequency Low Noise Adjustable Output Voltage Up to 1.5A Peak Switch Current Low Shutdown Current:
2A, 23V, 380KHz Step-Down Converter
2A, 23V, 380KHz Step-Down Converter General Description The is a buck regulator with a built-in internal power MOSFET. It achieves 2A continuous output current over a wide input supply range with excellent
Precision, High-Bandwidth Op Amp
EVALUATION KIT AVAILABLE MAX9622 General Description The MAX9622 op amp features rail-to-rail output and MHz GBW at just 1mA supply current. At power-up, this device autocalibrates its input offset voltage
MP A, 55V, 100kHz Step-Down Converter with Programmable Output OVP Threshold
The Future of Analog IC Technology MP24943 3A, 55V, 100kHz Step-Down Converter with Programmable Output OVP Threshold DESCRIPTION The MP24943 is a monolithic, step-down, switch-mode converter. It supplies
LF442 Dual Low Power JFET Input Operational Amplifier
LF442 Dual Low Power JFET Input Operational Amplifier General Description The LF442 dual low power operational amplifiers provide many of the same AC characteristics as the industry standard LM1458 while
MP2225 High-Efficiency, 5A, 18V, 500kHz Synchronous, Step-Down Converter
The Future of Analog IC Technology DESCRIPTION The MP2225 is a high-frequency, synchronous, rectified, step-down, switch-mode converter with built-in power MOSFETs. It offers a very compact solution to
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PowerAmp Design. PowerAmp Design PAD20 COMPACT HIGH VOLTAGE OP AMP
PowerAmp Design Rev C KEY FEATURES LOW COST HIGH VOLTAGE 150 VOLTS HIGH OUTPUT CURRENT 5A 40 WATT DISSIPATION CAPABILITY 80 WATT OUTPUT CAPABILITY INTEGRATED HEAT SINK AND FAN SMALL SIZE 40mm SQUARE RoHS
Low voltage LNA, mixer and VCO 1GHz
DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a
LF411 Low Offset, Low Drift JFET Input Operational Amplifier
Low Offset, Low Drift JFET Input Operational Amplifier General Description These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input
MP MHz, 700mA, Fixed-Frequency Step-Up Driver for up to 10 White LEDS
MP3301 1.3MHz, 700mA, Fixed-Frequency Step-Up Driver for up to 10 White LEDS DESCRIPTION The MP3301 is a step-up converter designed to drive WLEDS arrays from a single-cell, lithium-ion battery. The MP3301
Op Amp Booster Designs
Op Amp Booster Designs Although modern integrated circuit operational amplifiers ease linear circuit design, IC processing limits amplifier output power. Many applications, however, require substantially
Single Channel Linear Controller
Single Channel Linear Controller Description The is a low dropout linear voltage regulator controller with IC supply power (VCC) under voltage lockout protection, external power N-MOSFET drain voltage
1GHz low voltage LNA, mixer and VCO
DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a
LF444 Quad Low Power JFET Input Operational Amplifier
LF444 Quad Low Power JFET Input Operational Amplifier General Description The LF444 quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while
PA FAN PLATE ASSEMBLY 188D6127G1 SYMBOL PART NO. DESCRIPTION. 4 SBS /10 Spring nut. 5 19A702339P510 Screw, thread forming, flat head.
MAINTENANCE MANUAL 851-870 MHz, 110 WATT POWER AMPLIFIER 19D902797G5 TABLE OF CONTENTS Page DESCRIPTION.............................................. Front Page SPECIFICATIONS.................................................