AN1995 APPLICATION NOTE
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1 AN1995 APPLICATION NOTE Serial Flash Memory Device Marking The market trend is for ever greater package miniaturization. Today s small packages already have very limited space for the device marking. The need to be readable sets a lower limit on the character size. This, along with the upper limit on the printable space, defines the number of characters that can be printed on a given package. This document explains how the package marking for Serial Flash Memory devices is composed, for each type of package, and what type of information can be found in the various marking fields. SO8 NARROW BODY: IN HOUSE ASSEMBLY Table 1. SO8 Narrow Body: Codes MN O7 SO JEDEC Figure 1. SO8 Narrow Body: Top-Side Marking DDDDDDDD PYWWT AI09777 On the top-side (Figure 1.), the DDDDDDDD field (8 characters) contains the commercial name of the product. It is truncated if the name is too long for the field length. The remaining fields contain the traceability code, in accordance with the current double-digit coding: The P field (1 character) contains the assembly plant identifier. The T field contains the process technology code. January /11
2 TABLE OF CONTENTS SO8 NARROW BODY: IN HOUSE ASSEMBLY Table 1. SO8 Narrow Body: Codes Figure 1. SO8 Narrow Body: Top-Side Marking SO8 NARROW BODY: SUBCONTRACTOR ASSEMBLY Table 2. SO8 Narrow Body: Codes Figure 2. SO8 Narrow Body: Top-Side Marking Figure 3. SO8 Narrow Body: Back-Side Marking SO8 WIDE BODY Table 3. SO8 Wide Body: Codes Figure 4. SO8 Wide Body: Top-Side Marking Figure 5. SO8 Wide Body: Back-Side Marking SO16 WIDE BODY Table 4. SO16 Wide Body: Codes Figure 6. SO16 Wide Body: Top-Side Marking MLP 5X Table 5. MLP 5x6: Codes Figure 7. MLP 5x6: Top-Side Marking MLP 8X Table 6. MLP 8x6: Codes Figure 8. MLP 8x6: Top-Side Marking TSSOP8: IN HOUSE ASSEMBLY Table 7. TSSOP8: Code Figure 9. TSSOP8: Top-side Marking TSSOP8: SUBCONTRACTOR ASSEMBLY Table 8. TSSOP8: Code Figure 10.TSSOP8: Top-side Marking Figure 11.TSSOP8: Back-side Marking REVISION HISTORY Table 9. Document Revision History /11
3 SO8 NARROW BODY: SUBCONTRACTOR ASSEMBLY Table 2. SO8 Narrow Body: Codes MN O7 SO JEDEC Figure 2. SO8 Narrow Body: Top-Side Marking DDDDDDDD PYWWT AI09777 On the top-side (Figure 1.), the DDDDDDDD field (8 characters) contains the commercial name of the product (truncated if the name is too long for the field length). The remaining fields contain the traceability code in accordance with the current double-digit coding. The P field (1 character) contains the assembly plant identifier. The T field contains the process technology code. Figure 3. SO8 Narrow Body: Back-Side Marking AAAAAAA BBBBBBB AI09778 On the back-side (Figure 3.): The A field (7 characters) contains the last seven digits of the die code. The B field (7 characters) contains the first seven digits of the wafer lot number. 3/11
4 SO8 WIDE BODY Table 3. SO8 Wide Body: Codes MW 6L SO 08 WIDE.208 (EIAJ) Figure 4. SO8 Wide Body: Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B AI09779 On the top-side (Figure 4.): The B field (1 character) contains the ECOPACK level. If this field contains E, the product is Pbfree and RoHS-compliant. The DDDDDDDD field (8 characters) contains the commercial name of the product (truncated if the name is too long for the field length). The remaining fields contain the traceability code in accordance with the current double-digit coding. The PP field (2 characters) contains the assembly plant identifier. The LLL field (3 characters) contains the chronological sequence. The WX field (2 characters) contains the diffusion plant identifier. The COO field (3 characters) contains the country of origin code. The T field contains the process technology code. Figure 5. SO8 Wide Body: Back-Side Marking AAAAAAA BBBBBBB AI09778 On the back-side (Figure 5.): The A field (7 characters) contains the last seven digits of the die code. The B field (7 characters) contains the first seven digits of the wafer lot number. 4/11
5 SO16 WIDE BODY Table 4. SO16 Wide Body: Codes MF Y7 SO16.30 LARGE JEDEC MS Figure 6. SO16 Wide Body: Top-Side Marking B CCCC DDDDDDDDDD PPLLL WX COO YWW AI09780 On the top-side (Figure 6.): The B field (1 character) contains the ECOPACK level. If this field contains E, the product is Pbfree and RoHS-compliant. The CCCC field (4 characters) contains additional information (not defined in the present case). The DDDDDDDDDD field (10 characters) contains the commercial name of the product (truncated if the name is too long for the field length). The remaining fields contain the traceability code in accordance with the current double-digit coding. The PP field (2 characters) contains the assembly plant identifier. The LLL field (3 characters) contains the chronological sequence. The WX field (2 characters) contains the diffusion plant identifier. The COO field (3 characters) contains the country of origin code. 5/11
6 MLP 5X6 Table 5. MLP 5x6: Codes MP 70 VFQFPN 8 6x5x1 PITCH 1.27 Figure 7. MLP 5x6: Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B AI09781 On the top-side (Figure 7.): The B field (1 character) contains the ECOPACK level. If this field contains E, the product is Pbfree and RoHS-compliant. The DDDDDDDD field (8 characters) contains the commercial name of the product eventually truncated if the name is too long for the field length. The remaining fields contain the traceability code in accordance with the current double-digit coding. The PP field (2 characters) contains the assembly plant identifier. The LLL field (3 characters) contains the chronological sequence. The WX field (2 characters) contains the diffusion plant identifier. The COO field (3 characters) contains the country of origin code. The T field contains the process technology code. The, below left of the ST logo, indicates the location of Pin 1. 6/11
7 MLP 8X6 Table 6. MLP 8x6: Codes ME EP VDFPN 8x6x1 PITCH 1.27 Figure 8. MLP 8x6: Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B AI09781 On the top-side (Figure 8.): The B field (1 character) contains the ECOPACK level. If this field contains E, the product is Pbfree and RoHS-compliant. The DDDDDDDD field (8 characters) contains the commercial name of the product (truncated if the name is too long for the field length). The remaining fields contain the traceability code in accordance with the current double-digit coding. The PP field (2 characters) contains the assembly plant identifier. The LLL field (3 characters) contains the chronological sequence. The WX field (2 characters) contains the diffusion plant identifier. The COO field (3 characters) contains the country of origin code. The T field contains the process technology code. The, below left of the ST logo, indicates the location of Pin 1. 7/11
8 TSSOP8: IN HOUSE ASSEMBLY Table 7. TSSOP8: Code DW 6P TSSOP 8 BODY 4.4 PITCH 0.65 Figure 9. TSSOP8: Top-side Marking AAAAA PYWW ai10726 On the top-side (Figure 9.): The " " field indicates the location of Pin 1 The "AAAAA" field (5 characters) contains the truncated device reference. The "P" field (1 character) contains the assembly plant identifier (the last character of "PP", the assembly plant identifier) The "Y" field (1 character) contains the last digit of the year during which the parts were manufactured The "WW" field (2 characters) contains the week code (assembly week) 8/11
9 TSSOP8: SUBCONTRACTOR ASSEMBLY Table 8. TSSOP8: Code DW 6P TSSOP 8 BODY 4.4 PITCH 0.65 Figure 10. TSSOP8: Top-side Marking AAAA BBB ai10727 On the top-side (Figure 10.): The " " field indicates the location of Pin 1 The "AAAA" field (4 characters) contains the truncated device reference. The "BBB" field (3 characters) contains the truncated device reference. Figure 11. TSSOP8: Back-side Marking PPYWW LLL T ai10728 On the back-side (Figure 11.): The "PP" field (2 characters) contains the assembly plant identifier The "Y" field (1 character) contains the last digit of the year during which the parts were manufactured The "WW" field (2 characters) contains the week code (assembly week) The "LLL" field (3 characters) contains the chronological sequence The "T" field contains the process technology code 9/11
10 REVISION HISTORY Table 9. Document Revision History Date Version Revision Details 29-Jun First Issue 12-Jan TSSOP8: IN HOUSE ASSEMBLY and TSSOP8: SUBCONTRACTOR ASSEMBLY sections added. 10/11
11 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11
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74LVX257 LOW VOLTAGE CMOS QUAD 2 CHANNEL MULTIPLEXER (3-STATE) WITH 5V TOLERANT INPUTS
LOW VOLTAGE CMOS QUAD 2 CHANNEL MULTIPLEXER (3-STATE) WITH 5V TOLERANT INPUTS HIGH SPEED: t PD =5.8ns (TYP.) at V CC = 3.3V 5V TOLERANT INPUTS POWER-DOWN PROTECTION ON INPUTS INPUT VOLTAGE LEVEL: V IL
BUX87. High voltage NPN power transistor. Features. Applications. Description
High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
MD1802FX. High voltage NPN power transistor for standard definition CRT display. Features. Applications. Description
High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation
STMUX1000LQTR GIGABIT LAN ANALOG SWITCH 16-BIT TO 8-BIT MULTIPLEXER
GIGABIT LAN ANALOG SWITCH 16-BIT TO 8-BIT MULTIPLEXER LOW R ON : 5.5 TYPICAL V CC OPERATING RANGE: 3.0 TO 3.6 V LOW CURRENT CONSUMPTION: 20 µa ESD HBM MODEL: > 2 KV CHANNEL ON CAPACITANCE: 7.5 pf TYPICAL
ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description.
High voltage fast-switching NPN Power transistor General features State-of-the-art technology: Diffused collector Enhanced generation EHVS1 More stable performances versus operating temperature variation
Order codes Temperature range Package Packaging
CMOS quad 3-state differential line receiver Features CMOS design for low power ± 0.2 V sensitivity over input common mode voltage range Typical propagation delay: 19 ns Typical input hysteresis: 60 mv
AN601 APPLICATION NOTE NEW HIGH VOLTAGE ULTRA-FAST DIODES: THE TURBOSWITCH TM A and B SERIES
AN601 APPLICATION NOTE NEW HIGH VOLTAGE ULTRA-FAST DIODES: THE TURBOSWITCH TM A and B SERIES INTRODUCTION In today s power converter, the commutation speed of the transistor and the operating frequencies
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LOW-NOISE VERTICAL DEFLECTION SYSTEM FEATURES SUMMARY COMPLETE VERTICAL DEFLECTION SYSTEM LOW NOISE SUITABLE FOR HIGH DEFINITION MONITORS ESD PROTECTED DESCRIPTION The TDA75P is a monolithic integrated
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High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
STP16CL596 LOW VOLTAGE 16-BIT CONSTANT CURRENT LED SINK DRIVER
LOW VOLTAGE 16-BIT CONSTANT CURRENT LED SINK DRIVER LOW VOLTAGE POWER SUPPLY DOWN TO 3V 16 CONSTANT CURRENT OUTPUT CHANNELS ADJUSTABLE OUTPUT CURRENT THROUGH EXTERNAL RESISTOR SERIAL DATA IN/PARALLEL DATA
STD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-Channel 60V - 0.060Ω - 16A - DPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD16NF06 60V
STB High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power
LM723CN. High precision voltage regulator. Features. Description
High precision voltage regulator Features Input voltage up to 40 V Output voltage adjustable from 2 to 37 V Positive or negative supply operation Series, shunt, switching or floating operation Output current
74V1T00CTR SINGLE 2-INPUT NAND GATE
SINGLE 2-INPUT NAND GATE HIGH SPEED: t PD = 5.0ns (TYP.) at V CC =5V LOW POWER DISSIPATION: I CC =1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS: V IH =2V(MIN),V IL =0.8V(MAX) POWER DOWN PROTECTION
Obsolete Product(s) - Obsolete Product(s)
SINGLE 2-INPUT NAND GATE HIGH SPEED: t PD = 5.0ns (TYP.) at V CC =5V LOW POWER DISSIPATION: I CC =1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS: V IH =2V(MIN),V IL =0.8V(MAX) POWER DOWN PROTECTION
L9305A DUAL HIGH CURRENT RELAY DRIVER
L9305A DUAL HIGH CURRENT RELAY DRIVER. HIGH OUTPUT CURRENT HYSTERESIS INPUT COMPARATOR WITH WIDE RANGE COMMON MODE OPERATION AND GROUND COMPATIBLE INPUTS INPUT COMPARATOR HYSTERESIS INTERNAL THERMAL PROTECTION
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection
SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter P OUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar
STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C I C @100 C STGP10NB60SD 600V < 1.7V 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE
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PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145
LK115XX30 LK115XX33 - LK115XX50
LK115XX30 LK115XX33 - LK115XX50 ery low drop with inhibit voltage regulators Features ery low dropout voltage (0.2 typ.) ery low quiescent current (Typ. 0.01 µa in off mode, 280 µa in on mode) Output current
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
HCF4585B 4-BIT MAGNITUDE COMPARATOR
4-BIT MAGNITUDE COMPARATOR EXPANSION TO 8, 12, 16...4 N BITS BY CASCADING UNIT MEDIUM SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns (Typ.) at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing
High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation
ESDARF03-1BF3. Ultralow capacitance ESD protection for antenna. Features. Applications. Description. Benefits. Complies with the following standards
Ultralow capacitance ESD protection for antenna Features ultralow diode capacitance 0.6 pf Single line, protected against 15 kv ESD breakdown voltage V BR = 6.0 V min. Flip Chip 400 µm pitch, lead-free
LM323. Three-terminal 3 A adjustable voltage regulators. Features. Description
Three-terminal 3 A adjustable voltage regulators Features Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 W Minimum input voltage: 7.5 V Power dissipation: 30 W
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Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
74LVQ14 LOW VOLTAGE CMOS HEX SCHMITT INVERTER
LOW VOLTAGE CMOS HEX SCHMITT INVERTER HIGH SPEED: t PD = 6 ns (TYP.) at V CC = 3.3 V HYSTERESIS INPUT VOLTAGE: V H = 650mV (TYP.) at V CC = 3.0 V COMPATIBLE WITH TTL OUTPUTS LOW POWER DISSIPATION: I CC
DC LINE TERMINATION ACT DCT V-
L3845 TRUNK INTERFACE ON CHIP POLARITY GUARD MEETS DC LINE CHARACTERISTICS OF EITHER CCITT AND EIA RS 464 SPECS PULSE FUNCTION HIGH AC IMPEDANCE OFF HOOK-STATUS DETECTION OUTPUT LOW EXTERNAL COMPONENT
ESDA18-1F2. Transil, transient voltage suppressor. Features. Description. Complies with the following standards A 1
Transil, transient voltage suppressor Features Stand-off voltage 16V Unidirectional device Low clamping factor V CL /V BR Fast response time Very thin package: 0.65 mm Complies with the following standards
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack
STX112 STX117 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
BDX53B - BDX53C BDX54B - BDX54C
BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter
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TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
HCF4020B RIPPLE-CARRY BINARY COUNTER/DIVIDERS 14 STAGE
RIPPLE-CARRY BINARY COUNTER/DIVIDERS 14 STAGE MEDIUM SPEED OPERATION: 16MHz (Typ.) at V DD = 10V FULLY STATIC OPERATION COMMON RESET BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS