CMPFCD86 PFC Diode (8A/600V)
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1 FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current K A K A CMPFCD86 (TO-22AC) CMPFCD86 (TO-22FP) K MECHANICAL DATA Case : Molded plastic TO-22AC / TO-22FP Epoxy : UL94V- rate flame retardant Terminals : Solder able per MIL-STD-22 method Max. for 1 Seconds Maximum Mounting Torque 6 ( 5 ) Kg-cm( Ibf-in ) NC A A CMPFCD86 (TO-252/DPAK) Primary Characteristics I F(AV) V RRM V F(typ) I R(typ) 8A 6 V 1.5 V 1 μa T j 175 K ORDERING INFORMATION Part Number Temperature Range Package CMPFCD86XN22* -55 to 175 TO-22AC CMPFCD86GN22* -55 to 175 TO-22AC CMPFCD86XN22FP* -55 to 175 TO-22FP CMPFCD86GN22FP* -55 to 175 TO-22FP CMPFCD86XN252* -55 to 175 TO-252 *Note : G : Suffix for Pb Free Product X : Suffix for Halogen Free *Note : N : TO APPLICATION CIRCUIT AC INPUT EMI FILTER - + CMPFCD86 CMT14N6 PFC(CCM) Controller CM65XX CM68XX Family CM /9/3 Rev1.8 Champion Microelectronic Corporation Page 1
2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 6Hz, resistive or inductive load. For capacitive load, derate current by 2% CMPFCD86 Symbol Characteristics Unit Rating V RRM Recurrent Peak Reverse Voltage 6 V V DC DC Blocking Voltage 6 V IF (AV) Average Forward Rectified 8 A 8.3ms single half sine-wave Super imposed on rated load (JEDEC Method) 4ms single half sine-wave 1ms single half sine-wave 4ms single Square-wave superimposed on rated load 1.ms single Square-wave superimposed on rated load (JEDEC Method) 9 A 11 A 2 A 9 A 15 A I 2 t I 2 t Value For Fusing Tp=1ms 91 A 2 s V F Instantaneous Forward Voltage T J = T J = V I R DC Reverse Current T J =25 1 At Rated DC Blocking Voltage T J =15 45 Maximum Reverse Recovery Time ua Trr Test Conditions : I F =.5A, Ir=1.A, Irr=.25A 25 Test Conditions : I F =1A, di F /dt = -5A/uS, V R =3V 35 ns C J Typical Junction Capacitance (note1) 36 pf R θjc Typical Thermal Resistance (note2) TO-22AC TO / W TO-22FP 4.6 T J Operating Temperature Range -55~+175 T STG Storage Temperature Range -55~+175 TO-22AC 6 R θja Typical Thermal Resistance TO-22FP 5 TO Notes : 1. Measured at 1.MHz and applied reverse voltage of 4. Volts DC. 2. Thermal Resistance junction to case. 214/9/3 Rev1.8 Champion Microelectronic Corporation Page 2
3 TYPICAL CHARACTERISTICS Figure 1. Typical Forward voltage V.S current Figure 2. Typical Reverse Characteristics per Diode P F(av) (W) δ=.1 δ=.2 δ=.5 δ= T tp δ=tp/t I F(av) (A) I F(av) (A) δ=.5 per Diode Rth(j-a) = 15 o C/W Rth(j-a) = 75 o C/W Rth(j-a) = 2.5 o C/W Rth(j-a) = 4.5 o C/W Case Temperature ( o C) Figure 3. Average Forward Power Dissipation per Diode Figure 4. Current derating Curves Junction Capacitance (pf) 1 T=25 o C f=1.mhz Vsig= 2mVp-p IF S M (A ) Reverse Voltage (V) Time(mS) Figure 5. Typical Junction Capacitance Figure 6. Peak forward surge current (square-wave) 25 2 IFS M(A ) Time(mS) Figure 7. Peak forward surge current (single half sine wave) 214/9/3 Rev1.8 Champion Microelectronic Corporation Page 3
4 PACKAGE DIMENSION 214/9/3 Rev1.8 Champion Microelectronic Corporation Page 4
5 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 2212, Taiwan R.O.C T E L : T E L : F A X : F A X : /9/3 Rev1.8 Champion Microelectronic Corporation Page 5
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